JP4824296B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4824296B2 JP4824296B2 JP2004321303A JP2004321303A JP4824296B2 JP 4824296 B2 JP4824296 B2 JP 4824296B2 JP 2004321303 A JP2004321303 A JP 2004321303A JP 2004321303 A JP2004321303 A JP 2004321303A JP 4824296 B2 JP4824296 B2 JP 4824296B2
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- 239000004065 semiconductor Substances 0.000 title claims description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010410 layer Substances 0.000 claims description 41
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 28
- 229920005591 polysilicon Polymers 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 23
- 239000011229 interlayer Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
2、102 エピタキシャル層
3、103 ベース領域
4、104 ソース領域
5、105 トレンチ
6、106 ゲート絶縁膜
7、107 ゲート電極
8、108 層間絶縁膜
9、109 コンタクトホール
10、110 導電体プラグ
11、111 配線
112 第2の絶縁膜
113 第2の導電膜
Claims (4)
- 半導体基板上にトレンチを形成し、
前記トレンチ内にゲート電極を埋め込み
半導体基板上にベース領域を形成し、
前記ベース領域上にソース領域を形成し
前記ゲート電極上に絶縁層を形成し、
前記絶縁層上に導電膜を形成し、
前記導電膜と前記絶縁層をエッチングして前記ゲート電極への第1のコンタクトホールを形成するとともに、前記ソース領域をエッチングして前記ベース領域への第2のコンタクトホールを形成する半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、さらに、
半導体基板上全面に前記導電膜を覆うように層間絶縁膜を形成し、
前記層間絶縁膜と前記導電膜と前記絶縁層をエッチングして前記第1のコンタクトホールを形成するとともに、前記層間絶縁膜と前記ソース領域をエッチングして前記第2のコンタクトホールを形成することを特徴とする半導体装置の製造方法。 - 前記ソース領域および前記導電膜のエッチングはシリコンエッチングであることを特徴とする請求項1又は2に記載の半導体装置の製造方法。
- 前記導電膜は、素子分離膜上に形成されるダイオードまたは抵抗に用いられるポリシリコン膜であることを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004321303A JP4824296B2 (ja) | 2004-11-04 | 2004-11-04 | 半導体装置の製造方法 |
US11/265,119 US7508030B2 (en) | 2004-11-04 | 2005-11-03 | Semiconductor device with vertical MOSFET and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004321303A JP4824296B2 (ja) | 2004-11-04 | 2004-11-04 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2006135038A JP2006135038A (ja) | 2006-05-25 |
JP4824296B2 true JP4824296B2 (ja) | 2011-11-30 |
Family
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JP2004321303A Active JP4824296B2 (ja) | 2004-11-04 | 2004-11-04 | 半導体装置の製造方法 |
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US (1) | US7508030B2 (ja) |
JP (1) | JP4824296B2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5122762B2 (ja) * | 2006-03-07 | 2013-01-16 | 株式会社東芝 | 電力用半導体素子、その製造方法及びその駆動方法 |
JP2008084901A (ja) * | 2006-09-26 | 2008-04-10 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP2008085278A (ja) | 2006-09-29 | 2008-04-10 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
KR100846099B1 (ko) | 2007-01-30 | 2008-07-14 | 삼성전자주식회사 | 리세스 채널 트랜지스터를 포함하는 반도체 장치 제조 방법 |
JP5563760B2 (ja) * | 2008-12-19 | 2014-07-30 | ローム株式会社 | 半導体装置 |
CN102244095B (zh) * | 2010-05-11 | 2013-05-22 | 力士科技股份有限公司 | 一种功率半导体器件 |
CN102983098A (zh) * | 2011-09-07 | 2013-03-20 | 中国科学院微电子研究所 | 后栅工艺中电极和连线的制造方法 |
US8569780B2 (en) * | 2011-09-27 | 2013-10-29 | Force Mos Technology Co., Ltd. | Semiconductor power device with embedded diodes and resistors using reduced mask processes |
CN104779288B (zh) * | 2014-01-13 | 2019-05-31 | 北大方正集团有限公司 | 一种vdmos器件及其制造方法 |
CN107104149B (zh) * | 2017-05-25 | 2020-04-07 | 中山汉臣电子科技有限公司 | 一种功率半导体器件 |
JP2022082244A (ja) * | 2020-11-20 | 2022-06-01 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5597765A (en) * | 1995-01-10 | 1997-01-28 | Siliconix Incorporated | Method for making termination structure for power MOSFET |
JP3201221B2 (ja) * | 1995-07-05 | 2001-08-20 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3206726B2 (ja) * | 1995-12-07 | 2001-09-10 | 富士電機株式会社 | Mos型半導体装置の製造方法 |
KR100652909B1 (ko) * | 1998-03-06 | 2006-12-01 | 에이에스엠 아메리카, 인코포레이티드 | 하이 스텝 커버리지를 갖는 실리콘 증착 방법 |
JP3497751B2 (ja) | 1998-12-18 | 2004-02-16 | 加賀東芝エレクトロニクス株式会社 | 半導体装置およびその製造方法 |
EP1151478B1 (de) | 1999-01-11 | 2002-08-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mos-leistungsbauelement und verfahren zum herstellen desselben |
US6706604B2 (en) * | 1999-03-25 | 2004-03-16 | Hitachi, Ltd. | Method of manufacturing a trench MOS gate device |
JP3642466B2 (ja) * | 1999-04-13 | 2005-04-27 | 関西日本電気株式会社 | 半導体装置の製造方法 |
JP3773755B2 (ja) * | 2000-06-02 | 2006-05-10 | セイコーインスツル株式会社 | 縦形mosトランジスタ及びその製造方法 |
JP2002158355A (ja) * | 2000-11-20 | 2002-05-31 | Nec Kansai Ltd | 半導体装置およびその製造方法 |
JP4932088B2 (ja) * | 2001-02-19 | 2012-05-16 | ルネサスエレクトロニクス株式会社 | 絶縁ゲート型半導体装置の製造方法 |
JP4004843B2 (ja) * | 2002-04-24 | 2007-11-07 | Necエレクトロニクス株式会社 | 縦型mosfetの製造方法 |
-
2004
- 2004-11-04 JP JP2004321303A patent/JP4824296B2/ja active Active
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2005
- 2005-11-03 US US11/265,119 patent/US7508030B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US7508030B2 (en) | 2009-03-24 |
US20060091457A1 (en) | 2006-05-04 |
JP2006135038A (ja) | 2006-05-25 |
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