JP7156811B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 87
- 238000000034 method Methods 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000010410 layer Substances 0.000 claims description 248
- 238000009792 diffusion process Methods 0.000 claims description 232
- 238000002955 isolation Methods 0.000 claims description 42
- 239000012535 impurity Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 26
- 239000002344 surface layer Substances 0.000 claims description 10
- 230000001629 suppression Effects 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- 230000004888 barrier function Effects 0.000 description 14
- 230000003071 parasitic effect Effects 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 10
- 238000002513 implantation Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- BLOIXGFLXPCOGW-UHFFFAOYSA-N [Ti].[Sn] Chemical compound [Ti].[Sn] BLOIXGFLXPCOGW-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
メタル配線層形成工程S14では、先ず、スパッタリングにより、絶縁層51の上面に、下層バリアメタル73、導電部材72及び上層バリアメタル層71を積層する。下層バリアメタル73は、例えばTi(チタン)又はTiN(窒化チタン)等からなり、導電部材72は、例えばAl-Cu(アルミ、銅)等の合金からなる。次に、メタル配線層形成工程S14では、バリアメタル層71の上面においてメタル配線に相当する領域をレジストでマスクして、上層バリアメタル層71、導電部材72及び下層バリアメタル73をエッチングする。これにより、図18A~図18Cに示すように、絶縁層51の上面に、上層バリアメタル層71、導電部材72及び下層バリアメタル73の積層構造を有するメタル配線層70が形成される。
12d、12s 高濃度拡散層
13d、13s 低濃度拡散層
15 ゲート電極
16 サイドウォール
31 素子分離絶縁膜
32 ハンプ抑制拡散領域
100 半導体装置
Claims (12)
- 半導体の素子領域と、前記素子領域の周囲を囲み前記素子領域に接する絶縁膜を含む素子分離領域と、が形成されている半導体基板と、
前記素子領域の上面部において夫々が第1の方向に延在して互いに離間して形成されており、前記第1の方向における端部が前記絶縁膜と接している一方及び他方の第1の拡散層と、
前記素子領域上において前記第1の方向に延在して形成されており、前記第1の方向における端部が前記絶縁膜と接しているゲート酸化膜と、
前記ゲート酸化膜上において前記第1の方向に延在しており、前記第1の方向における端部が前記絶縁膜上に形成されているゲート電極と、
前記一方及び他方の第1の拡散層間のチャネル領域内における、前記ゲート酸化膜が前記絶縁膜と接する部分を含む領域に形成されている、導電性の不純物が拡散されている第2の拡散層と、を含み、
前記一方及び他方の第1の拡散層よりも高濃度の不純物を含む一方及び他方の高濃度拡散層が前記一方及び他方の第1の拡散層の各々の表層に形成されており、
前記ゲート電極の前記端部は前記第2の拡散層を覆う領域を含み、前記ゲート電極の前記端部での前記第1の方向に直交する方向における電極幅が、前記端部以外の前記ゲート電極の領域での前記第1の方向に直交する方向における電極幅よりも広く、
前記一方及び他方の高濃度拡散層間に前記第2の拡散層が含まれる前記第1の方向における区間での前記一方及び他方の高濃度拡散層間の間隔が、前記第2の拡散層が含まれていない前記第1の方向における区間での前記一方及び他方の高濃度拡散層間の間隔よりも広く、
前記一方及び他方の第1の拡散層間に前記第2の拡散層が含まれる前記第1の方向における区間での前記一方及び他方の第1の拡散層間の間隔が、前記第2の拡散層が含まれていない前記第1の方向における区間での前記一方及び他方の第1の拡散層間の間隔よりも広いことを特徴とする半導体装置。 - 前記絶縁膜は前記半導体基板に形成されているトレンチに埋設されていることを特徴とする請求項1に記載の半導体装置。
- 前記第2の拡散層には、前記チャネル領域よりも高い濃度の不純物が含まれていることを特徴とする請求項1又は2に記載の半導体装置。
- 前記第2の拡散層及び前記チャネル領域は第1導電型であり、前記一方及び他方の第1の拡散層は前記第1導電型とは異なる第2導電型であることを特徴とする請求項1~3のいずれか1に記載の半導体装置。
- 前記一方及び他方の高濃度拡散層の各々は、前記一方及び他方の高濃度拡散層間に前記第2の拡散層が含まれていない前記第1の方向における区間に、前記チャネル領域の方向に突出した突出部を有し、
前記一方及び他方の高濃度拡散層各々の上面における前記突出部を含む領域にコンタクトが結合されていることを特徴とする請求項1に記載の半導体装置。 - 素子領域と前記素子領域の周囲を接して囲む素子分離領域とを主面に備えた半導体基板と、
一端が前記素子分離領域上に配置されると共に、前記主面の前記素子領域上に絶縁層を介して配置された電極と、
平面視において前記電極に対応する領域に内包される前記素子領域に、第1の方向に延在して互いに対向して配置される一対の第1の拡散層と、
平面視において前記電極に対応する領域に内包される前記素子領域に、前記素子領域と前記素子分離領域との境界が形成する辺に接すると共に前記一対の第1の拡散層から離間して配置される、導電性の不純物が拡散されている第2の拡散層と、を備え、
前記一対の第1の拡散層よりも高濃度の不純物を含む一対の高濃度拡散層が前記一対の第1の拡散層の各々の表層に形成されており、
前記電極の端部は前記第2の拡散層を覆う領域を含み、前記電極の前記端部での前記第1の方向に直交する方向における電極幅が、前記端部以外の前記電極の領域での前記第1の方向に直交する方向における電極幅よりも広く、
前記一対の高濃度拡散層間に前記第2の拡散層が含まれる前記第1の方向における区間での前記一対の高濃度拡散層間の間隔が、前記第2の拡散層が含まれていない前記第1の方向における区間での前記一対の高濃度拡散層間の間隔よりも広く、
前記一対の第1の拡散層に挟まれるチャネル領域は、前記辺と垂直な方向に延在すると共に前記第1の拡散層を内包し、前記第2の拡散層を内包すると共に前記辺と平行な方向の幅が第1の長さである第1の領域と、前記辺と平行な方向の幅が前記第1の長さより短い第2の長さである第2の領域と、を備えることを特徴とする半導体装置。 - 半導体の素子領域と、前記素子領域の周囲を囲み前記素子領域に接する絶縁膜を含む素子分離領域と、を含む半導体装置の製造方法であって、
前記素子領域の上面部に不純物を注入することにより、夫々が第1の方向に延在して互いに離間しており、前記第1の方向における端部が前記絶縁膜と接している一方及び他方の第1の拡散層を形成する第1の工程と、
前記一方及び他方の第1の拡散層間に挟まれるチャネル領域の上面部において前記絶縁膜と接する部分を含む領域に不純物を注入して第2の拡散層を形成する第2の工程と、
前記素子領域上において前記第1の方向に延在しており前記第1の方向における端部が前記絶縁膜と接しているゲート酸化膜、及び前記ゲート酸化膜上において前記第1の方向に延在しており、前記第1の方向における端部が前記絶縁膜上にあるゲート電極を形成する第3の工程と、を含み、
前記第1の工程では、
前記一方及び他方の第1の拡散層間に前記第2の拡散層が含まれている前記第1の方向における区間での前記一方及び他方の第1の拡散層間の間隔が、前記第2の拡散層が含まれていない前記第1の方向における区間での前記一方及び他方の第1の拡散層間の間隔よりも広くなるような形態を有する前記一方及び他方の第1の拡散層を前記素子領域の上面部に形成することを特徴とする半導体装置の製造方法。 - 前記絶縁膜は前記素子領域と前記素子分離領域とを主面に備えた半導体基板に形成されているトレンチに埋設されていることを特徴とする請求項7に記載の半導体装置の製造方法。
- 前記第2の工程では、前記チャネル領域よりも高い濃度の不純物を前記素子領域に注入することにより、前記第2の拡散層を形成することを特徴とする請求項7又は8に記載の半導体装置の製造方法。
- 前記素子領域は第1導電型であり、
前記第1の工程では、前記第1導電型とは異なる第2導電型の不純物を前記素子領域に注入することにより前記一方及び他方の第1の拡散層を形成し、
前記第2の工程では、前記第1導電型の不純物を前記素子領域に注入することにより前記第2の拡散層を形成することを特徴とする請求項7~9のいずれか1に記載の半導体装置の製造方法。 - 前記一方及び他方の第1の拡散層よりも高濃度の不純物を前記一方及び他方の第1の拡散層に注入することにより前記一方及び他方の第1の拡散層の各々の表層に一方及び他方の高濃度拡散層を形成する第4の工程を含み、
前記第3の工程では、
前記ゲート電極における前記第2の拡散層を覆う領域を含む前記端部での前記第1の方向に直交する方向における電極幅が、前記端部以外の前記ゲート電極の領域での前記第1の方向に直交する方向における電極幅よりも広くなるような形態を有する前記ゲート電極を形成し、
前記第4の工程では、
前記一方及び他方の高濃度拡散層間に前記第2の拡散層が含まれる前記第1の方向における区間での前記一方及び他方の高濃度拡散層間の間隔が、前記第2の拡散層が含まれていない前記第1の方向における区間での前記一方及び他方の高濃度拡散層間の間隔よりも広くなるような形態を有する前記一方及び他方の高濃度拡散層を前記一方及び他方の第1の拡散層の上面に形成することを特徴とする請求項7~10のいずれか1に記載の半導体装置の製造方法。 - 前記第4の工程では、前記チャネル領域内における前記第2の拡散層が含まれていない前記第1の方向における区間に前記チャネル領域の方向に突出した突出部を夫々が有する前記一方及び他方の高濃度拡散層を形成し、
前記一方及び他方の高濃度拡散層各々の前記突出部を含む領域に結合したコンタクトを形成する第5の工程を更に含むことを特徴とする請求項11に記載の半導体装置の製造方法。
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