JP6319057B2 - 逆導通型半導体装置 - Google Patents
逆導通型半導体装置 Download PDFInfo
- Publication number
- JP6319057B2 JP6319057B2 JP2014236495A JP2014236495A JP6319057B2 JP 6319057 B2 JP6319057 B2 JP 6319057B2 JP 2014236495 A JP2014236495 A JP 2014236495A JP 2014236495 A JP2014236495 A JP 2014236495A JP 6319057 B2 JP6319057 B2 JP 6319057B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- anode layer
- contact
- main surface
- barrier metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 239000010410 layer Substances 0.000 claims description 149
- 230000004888 barrier function Effects 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052721 tungsten Inorganic materials 0.000 claims description 13
- 239000010937 tungsten Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 239000011229 interlayer Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 230000003252 repetitive effect Effects 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000011084 recovery Methods 0.000 description 9
- 238000004088 simulation Methods 0.000 description 5
- INQLNSVYIFCUML-QZTLEVGFSA-N [[(2r,3s,4r,5r)-5-(6-aminopurin-9-yl)-3,4-dihydroxyoxolan-2-yl]methoxy-hydroxyphosphoryl] [(2r,3s,4r,5r)-5-(4-carbamoyl-1,3-thiazol-2-yl)-3,4-dihydroxyoxolan-2-yl]methyl hydrogen phosphate Chemical compound NC(=O)C1=CSC([C@H]2[C@@H]([C@H](O)[C@@H](COP(O)(=O)OP(O)(=O)OC[C@@H]3[C@H]([C@@H](O)[C@@H](O3)N3C4=NC=NC(N)=C4N=C3)O)O2)O)=N1 INQLNSVYIFCUML-QZTLEVGFSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Description
図1は、本発明の実施の形態1に係る逆導通型半導体装置10の斜視図である。逆導通型半導体装置10はトランジスタ12とトランジスタ12の横に形成されたダイオード14を備えている。トランジスタ12とダイオード14は半導体基板16に形成されている。半導体基板16は、第1主面16aと第2主面16bを有する第1導電型(n型)の基板である。
図6は、本発明の実施の形態2に係る逆導通型半導体装置の斜視図である。実施の形態2に係る逆導通型半導体装置は、実施の形態1との共通点が多いので実施の形態1との相違点を中心に説明する。高濃度アノード層100は、平面視で千鳥形に配置されている。すなわち、高濃度アノード層100がゲート酸化膜20とゲート電極22を介して別の高濃度アノード層に接することがないように、高濃度アノード層がジグザグに形成されている。
Claims (5)
- 第1主面と第2主面を有する第1導電型の半導体基板と、
前記第1主面にストライプ状に設けられた複数のトレンチ溝の中に、ゲート酸化膜を介して形成されたゲート電極と、
前記第1主面側に形成されたエミッタ層と、前記エミッタ層の下に形成され、前記ゲート酸化膜に接する第2導電型のベース層と、前記第2主面側に形成された第2導電型のコレクタ層とを有するトランジスタと、
前記第1主面側に形成された第2導電型のアノード層と、前記第1主面側に形成された、前記アノード層よりも不純物濃度が高い第2導電型の高濃度アノード層と、前記第2主面側に形成された第1導電型のカソード層と、を有し、前記トランジスタの横に形成されたダイオードと、
前記第1主面の上に形成され、前記ゲート電極の直上を避けて前記ゲート電極と平行に伸びる貫通溝を有する層間膜と、
前記貫通溝の中に、前記アノード層と前記高濃度アノード層に接するように形成されたバリアメタル層と、
バリアメタル層に接し、前記貫通溝を埋めるタングステンプラグと、
前記タングステンプラグに接するエミッタ電極と、を備え、
前記高濃度アノード層の幅は、前記バリアメタル層の前記高濃度アノード層との接触幅より大きく、
前記アノード層と前記高濃度アノード層の繰り返しパターンの単位であるアノードセルあたりの前記高濃度アノード層と前記バリアメタル層との接触面積S1は、前記アノードセルあたりの前記アノード層と前記バリアメタル層との接触面積S2より小さく、
前記高濃度アノード層の単位面積当たりの前記バリアメタル層とのコンタクト抵抗は、前記アノード層の単位面積当たりの前記バリアメタル層とのコンタクト抵抗の1/5以下であることを特徴とする逆導通型半導体装置。 - 前記接触面積S1と前記接触面積S2は、0.1<S1/(S1+S2)<0.5を満たすことを特徴とする請求項1に記載の逆導通型半導体装置。
- 前記高濃度アノード層は、平面視で千鳥形に配置されたことを特徴とする請求項1又は2に記載の逆導通型半導体装置。
- 前記半導体基板はワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1〜3のいずれか1項に記載の逆導通型半導体装置。
- 前記ワイドバンドギャップ半導体は、炭化珪素、窒化ガリウム系材料又はダイヤモンドであることを特徴とする請求項4に記載の逆導通型半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014236495A JP6319057B2 (ja) | 2014-11-21 | 2014-11-21 | 逆導通型半導体装置 |
US14/800,353 US9472548B2 (en) | 2014-11-21 | 2015-07-15 | Reverse conducting semiconductor device |
DE102015220171.6A DE102015220171B4 (de) | 2014-11-21 | 2015-10-16 | Rückwärtsleitende Halbleitervorrichtung |
CN201510812427.6A CN105633077B (zh) | 2014-11-21 | 2015-11-20 | 反向导通型半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014236495A JP6319057B2 (ja) | 2014-11-21 | 2014-11-21 | 逆導通型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016100464A JP2016100464A (ja) | 2016-05-30 |
JP6319057B2 true JP6319057B2 (ja) | 2018-05-09 |
Family
ID=55914476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014236495A Active JP6319057B2 (ja) | 2014-11-21 | 2014-11-21 | 逆導通型半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9472548B2 (ja) |
JP (1) | JP6319057B2 (ja) |
CN (1) | CN105633077B (ja) |
DE (1) | DE102015220171B4 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021190639A (ja) * | 2020-06-03 | 2021-12-13 | 三菱電機株式会社 | 半導体装置 |
US11495678B2 (en) | 2020-07-29 | 2022-11-08 | Mitsubishi Electric Corporation | Semiconductor device |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6641983B2 (ja) * | 2015-01-16 | 2020-02-05 | 株式会社デンソー | 半導体装置 |
JP2017055046A (ja) * | 2015-09-11 | 2017-03-16 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
CN108780809B (zh) * | 2016-09-14 | 2021-08-31 | 富士电机株式会社 | Rc-igbt及其制造方法 |
JP6589817B2 (ja) * | 2016-10-26 | 2019-10-16 | 株式会社デンソー | 半導体装置 |
US10600897B2 (en) * | 2017-11-08 | 2020-03-24 | Fuji Electric Co., Ltd. | Semiconductor device |
JP7028093B2 (ja) * | 2017-11-08 | 2022-03-02 | 富士電機株式会社 | 半導体装置 |
JP7101593B2 (ja) * | 2018-10-30 | 2022-07-15 | 三菱電機株式会社 | 半導体装置 |
JP7283287B2 (ja) * | 2019-07-23 | 2023-05-30 | 株式会社デンソー | 半導体装置 |
JP7342742B2 (ja) * | 2020-03-11 | 2023-09-12 | 三菱電機株式会社 | 半導体装置 |
CN113451397A (zh) * | 2020-03-24 | 2021-09-28 | 珠海格力电器股份有限公司 | 一种rc-igbt器件及其制备方法 |
JP7354897B2 (ja) * | 2020-03-26 | 2023-10-03 | 三菱電機株式会社 | 半導体装置 |
JP7475251B2 (ja) | 2020-10-01 | 2024-04-26 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4351745B2 (ja) * | 1997-09-19 | 2009-10-28 | 株式会社東芝 | 半導体装置 |
JP4791015B2 (ja) * | 2004-09-29 | 2011-10-12 | ルネサスエレクトロニクス株式会社 | 縦型mosfet |
JP5070941B2 (ja) * | 2007-05-30 | 2012-11-14 | 株式会社デンソー | 半導体装置 |
JP5614877B2 (ja) * | 2010-05-28 | 2014-10-29 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5560991B2 (ja) * | 2010-07-23 | 2014-07-30 | 株式会社デンソー | 半導体装置 |
JP2012064849A (ja) * | 2010-09-17 | 2012-03-29 | Toshiba Corp | 半導体装置 |
JP2012190873A (ja) * | 2011-03-09 | 2012-10-04 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP6037499B2 (ja) * | 2011-06-08 | 2016-12-07 | ローム株式会社 | 半導体装置およびその製造方法 |
DE112011105681B4 (de) * | 2011-09-28 | 2015-10-15 | Toyota Jidosha Kabushiki Kaisha | Verfahren zur Herstellung einer Halbleitervorrichtung |
JP2013197122A (ja) * | 2012-03-15 | 2013-09-30 | Toshiba Corp | 半導体装置 |
JP2014075582A (ja) | 2012-09-12 | 2014-04-24 | Fuji Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
CN104871312B (zh) * | 2012-12-20 | 2017-06-16 | 丰田自动车株式会社 | 半导体装置 |
-
2014
- 2014-11-21 JP JP2014236495A patent/JP6319057B2/ja active Active
-
2015
- 2015-07-15 US US14/800,353 patent/US9472548B2/en active Active
- 2015-10-16 DE DE102015220171.6A patent/DE102015220171B4/de active Active
- 2015-11-20 CN CN201510812427.6A patent/CN105633077B/zh active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021190639A (ja) * | 2020-06-03 | 2021-12-13 | 三菱電機株式会社 | 半導体装置 |
US11569225B2 (en) | 2020-06-03 | 2023-01-31 | Mitsubishi Electric Corporation | Semiconductor device |
JP7390984B2 (ja) | 2020-06-03 | 2023-12-04 | 三菱電機株式会社 | 半導体装置 |
US11495678B2 (en) | 2020-07-29 | 2022-11-08 | Mitsubishi Electric Corporation | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
DE102015220171A1 (de) | 2016-05-25 |
US20160148928A1 (en) | 2016-05-26 |
DE102015220171B4 (de) | 2021-12-23 |
CN105633077B (zh) | 2019-08-06 |
CN105633077A (zh) | 2016-06-01 |
JP2016100464A (ja) | 2016-05-30 |
US9472548B2 (en) | 2016-10-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6319057B2 (ja) | 逆導通型半導体装置 | |
JP6274154B2 (ja) | 逆導通igbt | |
JP6158058B2 (ja) | 半導体装置 | |
CN102842598B (zh) | 用于功率半导体器件的改进的锯齿电场漂移区域结构 | |
US20180204909A1 (en) | Semiconductor device | |
JP2012142537A (ja) | 絶縁ゲート型バイポーラトランジスタとその製造方法 | |
JP5875680B2 (ja) | 絶縁ゲート型バイポーラトランジスタ | |
US20130248882A1 (en) | Semiconductor device | |
JP6863464B2 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP6146486B2 (ja) | 半導体装置 | |
US9607961B2 (en) | Semiconductor device | |
JP2019047045A (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP5482701B2 (ja) | 半導体素子 | |
WO2014148400A1 (ja) | 半導体装置 | |
CN105762147A (zh) | 一种半导体功率器件版图 | |
JP6799515B2 (ja) | 半導体装置 | |
JP6874443B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2016096307A (ja) | 半導体装置 | |
JP6935731B2 (ja) | 半導体装置 | |
JP2017054928A (ja) | 半導体装置 | |
JP2021168379A (ja) | フォワード・リカバリ電圧が低減された逆導通igbt | |
JP7439465B2 (ja) | 半導体装置 | |
JP6806213B2 (ja) | 半導体素子 | |
CN110212021B (zh) | 一种集成金属氧化物半导体的混合PiN肖特基二极管 | |
JP4802430B2 (ja) | 半導体素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20161110 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170711 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170829 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171005 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180306 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180319 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6319057 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |