JP6641983B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6641983B2 JP6641983B2 JP2015252136A JP2015252136A JP6641983B2 JP 6641983 B2 JP6641983 B2 JP 6641983B2 JP 2015252136 A JP2015252136 A JP 2015252136A JP 2015252136 A JP2015252136 A JP 2015252136A JP 6641983 B2 JP6641983 B2 JP 6641983B2
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- 239000004065 semiconductor Substances 0.000 title claims description 90
- 239000010410 layer Substances 0.000 claims description 214
- 238000002347 injection Methods 0.000 claims description 66
- 239000007924 injection Substances 0.000 claims description 66
- 230000002093 peripheral effect Effects 0.000 claims description 65
- 230000001629 suppression Effects 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 52
- 239000012535 impurity Substances 0.000 claims description 23
- 238000002513 implantation Methods 0.000 claims description 9
- 210000000746 body region Anatomy 0.000 claims description 8
- 239000002344 surface layer Substances 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims 3
- 238000011084 recovery Methods 0.000 description 20
- 239000011229 interlayer Substances 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 208000032368 Device malfunction Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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Description
そして、請求項1に記載の発明では、FWD領域における外周領域との境界部分は、ドリフト層のうちのベース層側と反対側がコレクタ層とされていることを特徴としている。
請求項5に記載の発明では、FWD領域において、外周領域との境界部分に形成された複数の注入抑制領域は、境界部分より内縁部に形成された複数の注入抑制領域より、一方向に沿った隣接する互いの間隔が短くされていることを特徴としている。
請求項6に記載の発明では、FWD領域において、外周領域との境界部分に形成された複数の注入抑制領域は、境界部分より内縁部に形成された複数の注入抑制領域より、一方向に沿った隣接する互いの間隔が長くされていることを特徴としている。
本発明の第1実施形態について説明する。なお、本実施形態の半導体装置は、例えば、インバータ、DC/DCコンバータ等の電源回路に使用されるパワースイッチング素子として利用されると好適である。
本発明の第2実施形態について説明する。本実施形態は、第1実施形態に対してボディ領域を形成したものであり、その他に関しては第1実施形態と同様であるため、ここでは説明を省略する。
本発明の第3実施形態について説明する。本実施形態は、第1実施形態に対して外周領域を備えるものであり、その他に関しては上記第1実施形態と同様であるため、ここでは説明を省略する。
本発明の第4実施形態について説明する。本実施形態は、第3実施形態に対して、半導体基板10の他面10b側の構成を変更したものであり、その他に関しては上記第3実施形態と同様であるため、説明を省略する。
本発明の第5実施形態について説明する。本実施形態は、第3実施形態に対して、注入抑制領域16の長さWn2を変更したものであり、その他に関しては上記第3実施形態と同様であるため、説明を省略する。
本発明の第5実施形態の変形例について説明する。上記第5実施形態において、図12に示されるように、FWD領域1bと外周領域2との境界部分では、FWD領域1bの内縁部より注入抑制領域16が粗に形成されていてもよい。具体的には、FWD領域1bと外周領域2との境界部分では、FWD領域1bの内縁部より、隣接する注入抑制領域16のトレンチ13の延設方向に沿った間隔が長くされていてもよい。さらに詳述すると、FWD領域1bと外周領域2との境界部分では、注入抑制領域16の長さWn2よりコンタクト領域17の長さWp2の方が長くされていてもよい。これによれば、上記図11で説明した半導体装置と比較して、FWD素子をダイオード動作させる際のホールの注入が多くなり、FWD素子の特性を向上できる。
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
1b FWD領域
10 半導体基板
11 ドリフト層
12 ベース層
13 トレンチ
18 ゲート絶縁膜
19 ゲート電極
23 コレクタ層
24 カソード層
Claims (9)
- 第1導電型のドリフト層(11)を有する半導体基板(10)と、
前記ドリフト層上に形成された第2導電型のベース層(12)と、
前記ドリフト層のうちの前記ベース層側と反対側に形成された第2導電型のコレクタ層(23)および第1導電型のカソード層(24)と、
前記ベース層を貫通して前記ドリフト層に達し、前記半導体基板の面方向における一方向に沿って形成された複数のトレンチ(13)と、
前記トレンチの壁面に形成されたゲート絶縁膜(18)と、
前記ゲート絶縁膜上に形成されたゲート電極(19)と、
前記ベース層の表層部に形成され、前記トレンチと接する第1導電型のエミッタ領域(14)と、を備え、
前記半導体基板のうちのIGBT素子として動作する領域がIGBT領域(1a)とされていると共にFWD素子として動作する領域がFWD領域(1b)とされ、前記エミッタ領域が前記IGBT領域に形成されている半導体装置において、
前記FWD領域では、前記ベース層の表層部において、前記ドリフト層よりも高不純物濃度とされた第1導電型の注入抑制領域(16)と、前記ベース層よりも高不純物濃度とされた第2導電型のコンタクト領域(17)とが前記一方向に沿って交互に形成されており、
前記半導体基板は、前記IGBT領域および前記FWD領域を有するセル領域(1)と、前記セル領域を囲み、前記ドリフト層を有する外周領域(2)とを備え、
前記セル領域における前記外周領域との境界の少なくとも一部は、前記FWD領域とされており、
前記外周領域は、前記ドリフト層上に前記セル領域に形成されたベース層が延設され、前記ドリフト層のうちの前記ベース層と反対側の部分に前記コレクタ層が形成されており、
前記FWD領域における前記外周領域との境界部分は、前記ドリフト層のうちの前記ベース層側と反対側がコレクタ層とされている半導体装置。 - 前記半導体基板は、前記ベース層側に位置する一面(10a)と、当該一面と反対側の面であり、前記コレクタ層または前記カソード層側に位置する他面(10b)とを有し、
前記FWD領域に形成されたコレクタ層は、前記外周領域との境界から前記半導体基板の一面と他面との間の長さ以上に形成されている請求項1に記載の半導体装置。 - 前記FWD領域において、前記外周領域との境界部分に形成された複数の注入抑制領域は、前記境界部分より内縁部に形成された複数の注入抑制領域より、前記一方向に沿った隣接する互いの間隔が短くされている請求項1または2に記載の半導体装置。
- 前記FWD領域において、前記外周領域との境界部分に形成された複数の注入抑制領域は、前記境界部分より内縁部に形成された複数の注入抑制領域より、前記一方向に沿った隣接する互いの間隔が長くされている請求項1または2に記載の半導体装置。
- 第1導電型のドリフト層(11)を有する半導体基板(10)と、
前記ドリフト層上に形成された第2導電型のベース層(12)と、
前記ドリフト層のうちの前記ベース層側と反対側に形成された第2導電型のコレクタ層(23)および第1導電型のカソード層(24)と、
前記ベース層を貫通して前記ドリフト層に達し、前記半導体基板の面方向における一方向に沿って形成された複数のトレンチ(13)と、
前記トレンチの壁面に形成されたゲート絶縁膜(18)と、
前記ゲート絶縁膜上に形成されたゲート電極(19)と、
前記ベース層の表層部に形成され、前記トレンチと接する第1導電型のエミッタ領域(14)と、を備え、
前記半導体基板のうちのIGBT素子として動作する領域がIGBT領域(1a)とされていると共にFWD素子として動作する領域がFWD領域(1b)とされ、前記エミッタ領域が前記IGBT領域に形成されている半導体装置において、
前記FWD領域では、前記ベース層の表層部において、前記ドリフト層よりも高不純物濃度とされた第1導電型の注入抑制領域(16)と、前記ベース層よりも高不純物濃度とされた第2導電型のコンタクト領域(17)とが前記一方向に沿って交互に形成されており、
前記半導体基板は、前記IGBT領域および前記FWD領域を有するセル領域(1)と、前記セル領域を囲み、前記ドリフト層を有する外周領域(2)とを備え、
前記セル領域における前記外周領域との境界の少なくとも一部は、前記FWD領域とされており、
前記外周領域は、前記ドリフト層上に前記セル領域に形成されたベース層が延設され、前記ドリフト層のうちの前記ベース層と反対側の部分に前記コレクタ層が形成されており、
前記FWD領域において、前記外周領域との境界部分に形成された複数の注入抑制領域は、前記境界部分より内縁部に形成された複数の注入抑制領域より、前記一方向に沿った隣接する互いの間隔が短くされている半導体装置。 - 第1導電型のドリフト層(11)を有する半導体基板(10)と、
前記ドリフト層上に形成された第2導電型のベース層(12)と、
前記ドリフト層のうちの前記ベース層側と反対側に形成された第2導電型のコレクタ層(23)および第1導電型のカソード層(24)と、
前記ベース層を貫通して前記ドリフト層に達し、前記半導体基板の面方向における一方向に沿って形成された複数のトレンチ(13)と、
前記トレンチの壁面に形成されたゲート絶縁膜(18)と、
前記ゲート絶縁膜上に形成されたゲート電極(19)と、
前記ベース層の表層部に形成され、前記トレンチと接する第1導電型のエミッタ領域(14)と、を備え、
前記半導体基板のうちのIGBT素子として動作する領域がIGBT領域(1a)とされていると共にFWD素子として動作する領域がFWD領域(1b)とされ、前記エミッタ領域が前記IGBT領域に形成されている半導体装置において、
前記FWD領域では、前記ベース層の表層部において、前記ドリフト層よりも高不純物濃度とされた第1導電型の注入抑制領域(16)と、前記ベース層よりも高不純物濃度とされた第2導電型のコンタクト領域(17)とが前記一方向に沿って交互に形成されており、
前記半導体基板は、前記IGBT領域および前記FWD領域を有するセル領域(1)と、前記セル領域を囲み、前記ドリフト層を有する外周領域(2)とを備え、
前記セル領域における前記外周領域との境界の少なくとも一部は、前記FWD領域とされており、
前記外周領域は、前記ドリフト層上に前記セル領域に形成されたベース層が延設され、前記ドリフト層のうちの前記ベース層と反対側の部分に前記コレクタ層が形成されており、
前記FWD領域において、前記外周領域との境界部分に形成された複数の注入抑制領域は、前記境界部分より内縁部に形成された複数の注入抑制領域より、前記一方向に沿った隣接する互いの間隔が長くされている半導体装置。 - 前記IGBT領域では、前記ベース層の表層部において、前記エミッタ領域と共に、第2導電型のコンタクト領域が形成され、当該コンタクト領域と前記エミッタ領域とは前記一方向に沿って交互に形成されており、
前記IGBT領域における前記エミッタ領域の前記一方向に沿った方向の長さ(Wn1)と前記コンタクト領域における前記一方向に沿った方向の長さ(Wp1)との比と、前記FWD領域における前記注入抑制領域の前記一方向に沿った方向の長さ(Wn2)と前記コンタクト領域における前記一方向に沿った方向の長さ(Wp2)との比とは異なっている請求項1ないし6のいずれか1つに記載の半導体装置。 - 前記ベース層のうちの前記エミッタ領域、前記コンタクト領域、前記注入抑制領域の下方には、前記ベース層よりも高不純物濃度とされ、かつ前記一方向に沿って延設され、前記コンタクト領域と繋がっていると共に前記トレンチと離間しているボディ領域(26)が形成されている請求項1ないし7のいずれか1つに記載の半導体装置。
- 前記注入抑制領域は、前記FWD領域のみに形成されている請求項1ないし8のいずれか1つに記載の半導体装置。
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