JP5981659B2 - 半導体装置 - Google Patents
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- JP5981659B2 JP5981659B2 JP2015533804A JP2015533804A JP5981659B2 JP 5981659 B2 JP5981659 B2 JP 5981659B2 JP 2015533804 A JP2015533804 A JP 2015533804A JP 2015533804 A JP2015533804 A JP 2015533804A JP 5981659 B2 JP5981659 B2 JP 5981659B2
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- 239000004065 semiconductor Substances 0.000 title claims description 123
- 230000004888 barrier function Effects 0.000 claims description 86
- 239000012535 impurity Substances 0.000 claims description 57
- 210000000746 body region Anatomy 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 8
- 230000003071 parasitic effect Effects 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Description
Claims (4)
- 同一の半導体基板にダイオード領域およびIGBT領域を備えている半導体装置であり、
前記ダイオード領域が、カソード電極と、第1導電型の半導体からなるカソード領域と、低濃度の第1導電型の半導体からなる第1ドリフト領域と、第2導電型の半導体からなる下部アノード領域と、第2導電型の半導体からなる上部アノード領域と、金属からなるアノード電極と、前記下部アノード領域と前記上部アノード領域の間に形成された、前記ドリフト領域よりも濃度が高い第1導電型の半導体からなる第1バリア領域と、前記第1バリア領域と前記アノード電極を接続するように形成された、前記バリア領域よりも濃度が高い第1導電型の半導体からなる第1ピラー領域と、を備えており、
前記第1ピラー領域と前記アノード電極がショットキー接合しており、
前記IGBT領域が、コレクタ電極と、第2導電型の半導体からなるコレクタ領域と、前記第1ドリフト領域から連続しており、低濃度の第1導電型の半導体からなる第2ドリフト領域と、第2導電型の半導体からなる下部ボディ領域と、第2導電型の半導体からなる上部ボディ領域と、第1導電型の半導体からなるエミッタ領域と、金属からなるエミッタ電極と、前記エミッタ領域と前記第2ドリフト領域の間の前記上部ボディ領域及び下部ボディ領域に対して絶縁膜を挟んで対向するゲート電極と、前記下部ボディ領域と前記上部ボディ領域の間に形成された、前記第2ドリフト領域よりも濃度が高い第1導電型の半導体からなる第2バリア領域と、前記第2バリア領域と前記エミッタ電極を接続するように形成された、前記第2バリア領域よりも濃度が高い第1導電型の半導体からなる第2ピラー領域と、を備えており、
前記第2ピラー領域と前記エミッタ電極がショットキー接合しており、
前記半導体装置がダイオードとして作動するときの前記エミッタ電極と前記第2バリア領域との間の第2ピラー領域の抵抗値が、前記アノード電極と前記第1バリア領域との間の第1ピラー領域の抵抗値より小さい、半導体装置。 - 前記第2ピラー領域と前記エミッタ電極との接合面の面積が、前記第1ピラー領域と前記アノード電極との接合面の面積より大きい、請求項1に記載の半導体装置。
- 前記第2ピラー領域の不純物濃度が、前記第1ピラー領域の不純物濃度より高い、請求項1又は2に記載の半導体装置。
- 前記カソード電極と前記アノード電極の間、及び、前記コレクタ電極と前記エミッタ電極の間に電圧が印加されていない状態において、前記エミッタ電極と前記第2バリア領域との間における正孔の量が、前記アノード電極と前記第1バリア領域との間における正孔の量より少ない、請求項1から3のいずれかに記載の半導体装置。
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PCT/JP2013/072751 WO2015029116A1 (ja) | 2013-08-26 | 2013-08-26 | 半導体装置 |
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JP5981659B2 true JP5981659B2 (ja) | 2016-08-31 |
JPWO2015029116A1 JPWO2015029116A1 (ja) | 2017-03-02 |
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JP (1) | JP5981659B2 (ja) |
CN (1) | CN105556668B (ja) |
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Cited By (1)
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JP2016164952A (ja) * | 2015-03-06 | 2016-09-08 | トヨタ自動車株式会社 | 半導体装置 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5918288B2 (ja) | 2014-03-03 | 2016-05-18 | トヨタ自動車株式会社 | 半導体装置 |
JP6003961B2 (ja) * | 2014-11-04 | 2016-10-05 | トヨタ自動車株式会社 | 半導体装置 |
JP6063915B2 (ja) | 2014-12-12 | 2017-01-18 | 株式会社豊田中央研究所 | 逆導通igbt |
JP6641983B2 (ja) * | 2015-01-16 | 2020-02-05 | 株式会社デンソー | 半導体装置 |
CN104966730B (zh) * | 2015-05-14 | 2018-01-12 | 湖南大学 | 肖特基势垒高电流密度igbt器件 |
JP6185511B2 (ja) * | 2015-05-26 | 2017-08-23 | トヨタ自動車株式会社 | 半導体装置 |
JP6274154B2 (ja) * | 2015-05-27 | 2018-02-07 | トヨタ自動車株式会社 | 逆導通igbt |
JP6281548B2 (ja) * | 2015-09-17 | 2018-02-21 | トヨタ自動車株式会社 | 半導体装置 |
JP6643382B2 (ja) | 2017-03-20 | 2020-02-12 | インフィニオン テクノロジーズ オーストリア アーゲーInfineon Technologies Austria AG | パワー半導体デバイス |
JP6852541B2 (ja) * | 2017-04-20 | 2021-03-31 | 株式会社デンソー | 半導体装置 |
US10847617B2 (en) * | 2017-12-14 | 2020-11-24 | Fuji Electric Co., Ltd. | Semiconductor device |
US10608122B2 (en) * | 2018-03-13 | 2020-03-31 | Semicondutor Components Industries, Llc | Schottky device and method of manufacture |
JP2022085307A (ja) * | 2020-11-27 | 2022-06-08 | 三菱電機株式会社 | 半導体装置 |
CN116632053B (zh) * | 2023-07-25 | 2024-01-30 | 深圳市美浦森半导体有限公司 | 一种rc-igbt器件的控制方法 |
Citations (6)
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---|---|---|---|---|
JP2005510059A (ja) * | 2001-11-16 | 2005-04-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 電界効果トランジスタ半導体デバイス |
JP2012043890A (ja) * | 2010-08-17 | 2012-03-01 | Denso Corp | 半導体装置 |
JP2012049562A (ja) * | 2011-11-04 | 2012-03-08 | Renesas Electronics Corp | 半導体装置 |
JP2013048230A (ja) * | 2011-07-27 | 2013-03-07 | Toyota Central R&D Labs Inc | ダイオード、半導体装置およびmosfet |
JP2013051346A (ja) * | 2011-08-31 | 2013-03-14 | Toyota Central R&D Labs Inc | ダイオード、半導体装置およびmosfet |
JP2013051345A (ja) * | 2011-08-31 | 2013-03-14 | Toyota Central R&D Labs Inc | ダイオード、半導体装置およびmosfet |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8716746B2 (en) * | 2010-08-17 | 2014-05-06 | Denso Corporation | Semiconductor device |
JP5918288B2 (ja) * | 2014-03-03 | 2016-05-18 | トヨタ自動車株式会社 | 半導体装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005510059A (ja) * | 2001-11-16 | 2005-04-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 電界効果トランジスタ半導体デバイス |
JP2012043890A (ja) * | 2010-08-17 | 2012-03-01 | Denso Corp | 半導体装置 |
JP2013048230A (ja) * | 2011-07-27 | 2013-03-07 | Toyota Central R&D Labs Inc | ダイオード、半導体装置およびmosfet |
JP2013051346A (ja) * | 2011-08-31 | 2013-03-14 | Toyota Central R&D Labs Inc | ダイオード、半導体装置およびmosfet |
JP2013051345A (ja) * | 2011-08-31 | 2013-03-14 | Toyota Central R&D Labs Inc | ダイオード、半導体装置およびmosfet |
JP2012049562A (ja) * | 2011-11-04 | 2012-03-08 | Renesas Electronics Corp | 半導体装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016164952A (ja) * | 2015-03-06 | 2016-09-08 | トヨタ自動車株式会社 | 半導体装置 |
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CN105556668A (zh) | 2016-05-04 |
US20160268252A1 (en) | 2016-09-15 |
CN105556668B (zh) | 2017-09-01 |
JPWO2015029116A1 (ja) | 2017-03-02 |
WO2015029116A1 (ja) | 2015-03-05 |
US9508710B2 (en) | 2016-11-29 |
DE112013007363T5 (de) | 2016-06-09 |
DE112013007363B4 (de) | 2017-02-02 |
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