CN105556668A - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN105556668A
CN105556668A CN201380079133.6A CN201380079133A CN105556668A CN 105556668 A CN105556668 A CN 105556668A CN 201380079133 A CN201380079133 A CN 201380079133A CN 105556668 A CN105556668 A CN 105556668A
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CN105556668B (zh
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斋藤顺
町田悟
山下侑佑
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Denso Corp
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Abstract

本发明提供一种能够对二极管区域中的电压变动进行抑制的技术。半导体装置(102)作为二极管而进行工作时的发射极(148)与下部体区(166)之间的电阻值小于阳极电极(148)与下部阳极区(168)之间的电阻值。此外，发射极(148)与第二势垒区(116)之间的空穴的量少于阳极电极(148)与第一势垒区(122)之间的空穴的量。

Description

半导体装置
技术领域
本说明书中所公开的技术涉及一种在同一半导体基板中具备二极管区域以及IGBT(InsulatedGateBipolarTransistor，绝缘栅双极型晶体管)区域的半导体装置。
背景技术
日本特开2012-043890号公报公开了在同一半导体基板中具备二极管区域以及IGBT区域的半导体装置的一个示例。
发明内容
发明所要解决的课题
在同一半导体基板中具备二极管区域以及IGBT区域的半导体装置中，在半导体装置作为二极管进行工作时，存在由IGBT区域的体区、漂移区与二极管区域的阴极区构成的寄生二极管导通的情况。当寄生二极管导通时，空穴也会从IGBT区域的体区向漂移区注入，从而会由于电导率调制现象而使二极管区域的正向电压下降。从体区被注入至漂移区的空穴的量会根据是否向IGBT区域的栅电极施加导通电位而发生变化。即，在向栅电极施加了导通电位的状态下，被注入至漂移区的空穴的量会变少，而在未向栅电极施加导通电位的状态下，被注入至漂移区的空穴的量会增多。由于二极管区域的正向电压由被注入至漂移区的空穴的量决定，因此当从IGBT区域的体区被注入至漂移区的空穴的量发生变动时，二极管区域的正向电压也会发生变动。在现有的半导体装置中，当寄生二极管导通时，从IGBT区域的体区被注入至漂移区的空穴的量相对于从二极管区域的阳极区被注入至漂移区的空穴的量，具有较大的比例。其结果为，存在二极管区域的正向电压根据有无向栅电极的导通电位的施加而大幅变动的问题。
因此本说明书的目的在于提供一种能够对上述的二极管区域中的正向电压的变动进行抑制的技术。
用于解决课题的方法
本说明书所公开的半导体装置在同一半导体基板中具备二极管区域以及IGBT区域。所述二极管区域具备：阴极电极；阴极区，其由第一导电型的半导体构成；第一漂移区，其由低浓度的第一导电型的半导体构成；下部阳极区，其由第二导电型的半导体构成；上部阳极区，其由第二导电型的半导体构成；阳极电极，其由金属构成；第一势垒区，其被形成在所述下部阳极区与所述上部阳极区之间，并由与所述漂移区相比浓度较高的第一导电型的半导体构成；第一柱区，其以对所述第一势垒区与所述阳极电极进行连接的方式而形成，并由与所述势垒区相比浓度较高的第一导电型的半导体构成。此外，所述第一柱区与所述阳极电极形成肖特基结。此外，所述IGBT区域具备：集电极；集电区，其由第二导电型的半导体构成；第二漂移区，其从所述第一漂移区连续，并由低浓度的第一导电型的半导体构成；下部体区，其由第二导电型的半导体构成；上部体区，其由第二导电型的半导体构成；发射区，其由第一导电型的半导体构成；发射极，其由金属构成；栅电极，其隔着绝缘膜而与所述发射区和所述第二漂移区之间的所述上部体区及所述下部体区对置；第二势垒区，其被形成在所述下部体区与所述上部体区之间，并由与所述第二漂移区相比浓度较高的第一导电型的半导体构成；第二柱区，其以对所述第二势垒区与所述发射极进行连接的方式而形成，并由与所述第二势垒区相比浓度较高的第一导电型的半导体构成。所述第二柱区与所述发射极形成肖特基结。此外，所述半导体装置作为二极管而工作时的所述发射极与所述第二势垒区之间的第二柱区的电阻值小于所述阳极电极与所述第一势垒区之间的第一柱区的电阻值。
上述的发射极与第二势垒区之间的第二柱区的电阻值为包括发射极与第二柱区形成的肖特基结处的电阻值以及从发射极至第二势垒区的路径中的第二柱区的电阻值的值。此外，上述的阳极电极与第一势垒区之间的第一柱区的电阻值为包括阳极电极与第一柱区的肖特基结处的电阻值以及从阳极电极至第一势垒区的路径中的第一柱区的电阻值。
根据这种结构，能够在半导体装置作为二极管进行工作时，对从IGBT区域的上部体区朝向二极管区域的阴极区而流动的空穴的量进行抑制。即，在上述的半导体装置中，与发射极形成肖特基结的第二柱区与第二势垒区连接，与阳极电极形成肖特基结的第一柱区与第一势垒区连接。而且，当半导体装置作为二极管而进行工作时(即，正向的电压被施加于上述的肖特基结时)，发射极与第二势垒区之间的第二柱区的电阻值小于阳极电极与第一势垒区之间的第一柱区的电阻值。因此，从上部体区经由第二势垒区而被注入至漂移区的空穴的量与从上部阳极区经由第一势垒区而被注入至漂移区的空穴的量相比变少。因此，相对于被注入至漂移区的空穴的总量，从IGBT区域的体区被注入至漂移区的空穴的量相对地变少。其结果为，能够在半导体装置作为二极管而进行工作时，对根据有无向IGBT区域的栅电极的导通电位的施加而产生的二极管区域的正向电压的变化进行抑制。
此外，在上述的半导体装置中，也可以采用如下方式，即，所述第二柱区与所述发射极的接合面的面积大于所述第一柱区与所述阳极电极的接合面的面积。
此外，也可以采用如下方式，即，所述第二柱区的杂质浓度高于所述第一柱区的杂质浓度。
此外，也可以采用如下方式，即，在未向所述阴极电极与所述阳极电极之间以及所述集电极与所述发射极之间施加电压的状态下，所述发射极与所述第二势垒区之间的空穴的量少于所述阳极电极与所述第一势垒区之间的空穴的量。
此外，本说明书中所公开的其他的半导体装置在同一半导体基板中具备二极管区域以及IGBT区域。所述二极管区域具备：阴极电极；阴极区，其由第一导电型的半导体构成；第一漂移区，其由低浓度的第一导电型的半导体构成；下部阳极区，其由第二导电型的半导体构成；上部阳极区，其由第二导电型的半导体构成；阳极电极，其由金属构成；第一势垒区，其被形成在所述下部阳极区与所述上部阳极区之间，并由与所述漂移区相比浓度较高的第一导电型的半导体构成；第一柱区，其以对所述第一势垒区与所述阳极电极进行连接的方式而形成，并由与所述势垒区相比浓度较高的第一导电型的半导体构成。此外，所述第一柱区与所述阳极电极形成肖特基结。此外，所述IGBT区域具备：集电极；集电区，其由第二导电型的半导体构成；第二漂移区，其从所述第一漂移区连续，并由低浓度的第一导电型的半导体构成；下部体区，其由第二导电型的半导体构成；上部体区，其由第二导电型的半导体构成；发射区，其由第一导电型的半导体构成；发射极，其由金属构成；栅电极，其隔着绝缘膜而与所述发射区和所述第二漂移区之间的所述上部体区及所述下部体区对置；第二势垒区，其被形成在所述下部体区与所述上部体区之间，并由与所述第二漂移区相比浓度较高的第一导电型的半导体构成；第二柱区，其以对所述第二势垒区与所述发射极进行连接的方式而形成，并由与所述第二势垒区相比浓度较高的第一导电型的半导体构成。所述第二柱区与所述发射极形成肖特基结。此外，在未向所述阴极电极与所述阳极电极之间以及所述集电极与所述发射极之间施加电压的状态下，所述发射极与所述第二势垒区之间的空穴的量少于所述阳极电极与所述第一势垒区之间的空穴的量。
附图说明
图1为示意性地表示半导体装置的结构的剖视图。
图2为示意性地表示半导体装置的结构的立体图。
图3为示意性地表示半导体装置的结构的剖视图。
图4为示意性地表示半导体装置的结构的立体图。
具体实施方式
(实施例1)如图1以及图2所示，实施例1的半导体装置102使用硅制的半导体基板104而被形成。半导体装置102具备二极管区域108以及IGBT区域106。另外，在图2中，为了明确各结构要素的配置，而未图示集电极/阴极电极146以及发射极/阳极电极148。
在二极管区域108中，在半导体基板104中依次层压有：作为高浓度n型半导体区域的n+阴极区120；作为n型半导体区域的n缓冲区112；作为低浓度n型半导体区域的第一n-漂移区114；作为p型半导体区域的下部阳极区168；作为n型半导体区域的n势垒区122；和作为p型半导体区域的上部阳极区124。在本实施例中，在n型半导体区域中作为杂质而添加有例如磷，在p型半导体区域中作为杂质而添加有例如硼。在本实施例中，n+阴极区120的杂质浓度为1×1017～5×1020[cm-3]左右，n缓冲区112的杂质浓度为1×1016～1×1019[cm-3]左右，第一n-漂移区114的杂质浓度为1×1012～1×1015[cm-3]左右，下部阳极区168的杂质浓度为1×1015～1×1019[cm-3]左右，n势垒区122的杂质浓度为1×1015～1×1018[cm-3]左右，上部阳极区124的杂质浓度为1×1016～1×1019[cm-3]左右。此外，n势垒区122的厚度为0.5～3.0[μm]左右，下部体区166的厚度为0.5～3.0[μm]左右。
在IGBT区域106内，在半导体基板104中依次层压有：作为高浓度p型半导体区域的p+集电区110；作为n型半导体区域的n缓冲区112；从第一n-漂移区114连续并作为低浓度n型半导体区域的第二n-漂移区115；作为p型半导体区域的下部体区166；作为n型半导体区域的n势垒区116；和作为p型半导体区域的上部体区118。在本实施例中，在n型半导体区域中作为杂质而添加有例如磷，在p型半导体区域中作为杂质而添加有例如硼。在本实施例中，p+集电区110的杂质浓度为1×1017～5×1020[cm-3]左右，n缓冲区112的杂质浓度为1×1016～1×1019[cm-3]左右，第二n-漂移区115的杂质浓度为1×1012～1×1015[cm-3]左右，下部体区166的杂质浓度为1×1015～1×1019[cm-3]左右，n势垒区116的杂质浓度为1×1015～1×1018[cm-3]左右，上部体区118的杂质浓度为1×1016～1×1019[cm-3]左右。此外，n势垒区116的厚度为0.5～3.0[μm]左右，下部阳极区168的厚度为0.5～3.0[μm]左右。
此外，在半导体基板104的上侧，以预定的间隔而形成有多个沟槽126。
在二极管区域108中，沟槽126从上部阳极区124的上侧表面贯穿n势垒区122以及下部阳极区168，并到达至第一n-漂移区114的内部。在沟槽126的内部，填充有由绝缘膜138所覆盖的栅电极140。在上部阳极区124的上侧表面处，以隔开预定的间隔的方式而形成有多个作为n型半导体区域的n柱区142。n柱区142的杂质浓度为1×1016～1×1019[cm-3]左右。n柱区142以贯穿上部阳极区124并到达至n势垒区122的上侧表面的方式被形成。此外，在上部阳极区124的上侧表面处，以隔开预定的间隔的方式而形成有多个作为高浓度p型半导体区域的p+接触区144。p+接触区144的杂质浓度为1×1017～1×1020[cm-3]左右。
在IGBT区域106中，沟槽126从上部体区118的上侧表面贯穿n势垒区116以及下部体区166，并到达至第二n-漂移区115的内部。在沟槽126的内部，填充有由绝缘膜128所覆盖的栅电极130。在上部体区118的上侧表面处，于与沟槽126相邻的部位处形成有作为高浓度n型半导体区域的n+发射区132。n+发射区132的杂质浓度为1×1017～5×1020[cm-3]左右。此外，在栅电极130的上部配置有绝缘膜129。栅电极130隔着绝缘膜128而与n+发射区132和第二n-漂移区115之间的上部体区118及下部体区166对置。此外，在上部体区118的上侧表面处，以隔开预定的间隔的方式而形成有多个作为n型半导体区域的n柱区134。n柱区134的杂质浓度为1×1016～1×1019[cm-3]左右。n柱区134以贯穿上部体区118并到达至n势垒区116的上侧表面的方式被形成。并且，在上部体区118的上侧表面处，以隔开预定的间隔的方式而形成有多个作为高浓度p型半导体区域的p+接触区136。p+接触区136的杂质浓度为1×1017～1×1020[cm-3]左右。
在半导体基板104的下侧表面上形成有金属制的集电极/阴极电极146。集电极/阴极电极146通过欧姆接触而与p+集电区110以及n+阴极区120接合。集电极/阴极电极146在IGBT区域106中作为集电极而发挥功能，在二极管区域108中作为阴极电极而发挥功能。
在半导体基板104的上侧表面上形成有金属制的发射极/阳极电极148。发射极/阳极电极148经由肖特基界面150而与n柱区134形成肖特基结，并经由肖特基界面152而与n柱区142形成肖特基结。通过对n柱区134及n柱区142的杂质浓度进行调节，能够使发射极/阳极电极148与各柱区134、142形成肖特基结。在本实施例中，肖特基界面150以及肖特基界面152的势垒高度均为0.2～1.0[eV]左右。此外，发射极/阳极电极148通过欧姆接触而与IGBT区域106的n+发射区132以及p+接触区136和二极管区域108的p+接触区144接合。发射极/阳极电极148在IGBT区域106中作为发射极而发挥功能，在二极管区域108中作为阳极电极而发挥功能。
此外，IGBT区域106中的n柱区134与发射极/阳极电极148的接合面的面积大于二极管区域108中的n柱区142与发射极/阳极电极148的接合面的面积。即，与二极管区域108的n柱区142相比，IGBT区域106的n柱区134的肖特基结的面积较大。由此，半导体装置102作为二极管而进行工作时的发射极/阳极电极148与n势垒区116之间的n柱区134的电阻值小于发射极/阳极电极148与n势垒区122之间的n柱区142的电阻值。
IGBT区域106的栅电极130与未图示的第一栅电极端子导通。二极管区域108的栅电极140与未图示的第二栅电极端子导通。
如上文所述，半导体装置102具有逆并联地连接有作为沟槽型的IGBT而发挥功能的IGBT区域106与作为续流二极管而发挥功能的二极管区域108的结构。
对半导体装置102的动作进行说明。当施加于发射极/阳极电极148的电位与施加于集电极/阴极电极146的电位相比高出预定的电位时，半导体装置102将作为二极管而导通。即，二极管区域108导通，并且通过IGBT区域106的体区118、166、漂移区114、115、n缓冲区112与阴极区120而形成的寄生二极管导通。其结果为，电流从发射极/阳极电极148向集电极/阴极电极146流通。
在半导体装置102作为二极管而导通之际，在向IGBT区域106的栅电极130施加导通电压时，在栅电极130的周围会形成反转层。由此，在IGBT区域106中，n+发射区132与n势垒区116及第二n-漂移区115会发生短路，从而抑制了从p+接触区136或上部体区118向第二n-漂移区115的空穴的注入。由于抑制了从IGBT区域106的体区118、166向漂移区114、115的空穴的注入，因此也抑制了寄生二极管对半导体装置102的特性(即，二极管区域108的正向电压)的影响。
另一方面，在未向栅电极130施加导通电压的情况下，在栅电极130的周围不会形成反转层，从而n+发射区132与第二n-漂移区115不会发生短路。但是，在IGBT区域106中，发射极/阳极电极148与n柱区134的肖特基结导通，从而发射极/阳极电极148与n柱区134发生短路。同样地，在二极管区域108中，发射极/阳极电极148与n柱区142的肖特基结导通，从而发射极/阳极电极148与n柱区142发生短路。
由于在二极管区域108内，n柱区142与n势垒区122几乎为相同电位，因此n势垒区122与发射极/阳极电极148之间的电位差与肖特基界面152处的电压降几乎相等。由于肖特基界面152处的电压降充分小于上部阳极区124与n势垒区122之间的pn结的内建电压，因此抑制了从p+接触区144或上部阳极区124向第一n-漂移区114的空穴的注入。另一方面，由于在IGBT区域106中，n柱区134与n势垒区116也几乎为相同电位，因此n势垒区116与发射极/阳极电极148的电位差与肖特基界面150处的电压降几乎相等。由于肖特基界面150处的电压降充分小于上部体区118与n势垒区116之间的pn结的内建电压，因此抑制了从p+接触区136或上部体区118向第二n-漂移区115的空穴的注入。
在此，在实施例1的半导体装置102中，二极管区域108中的肖特基界面152的面积小于IGBT区域106中的肖特基界面134的面积。即，半导体装置102作为二极管而进行工作时的发射极/阳极电极148与n势垒区116之间的n柱区134的电阻值小于发射极/阳极电极148与n势垒区122之间的n柱区142的电阻值。其结果为，与二极管区域108相比，在IGBT区域106中，从p+接触区136或上部体区118向第二n-漂移区115的空穴的注入被进一步抑制。由此，减小了寄生二极管对二极管电流的影响，从而能够抑制因将IGBT区域106的栅电极130导通/断开而产生的二极管区域108中的电压变动。
此外，由于能够通过对肖特基结的面积进行调节而对电阻值进行调节，因此无需为了对电阻值进行调节而追加制造工序，从而不会增加加工费。此外，由于只是在制造时对掩膜的面积进行调节，因此不会增加制造工序。
虽然在上文中对一个实施例进行了说明，但具体的方式并不限定于上述实施例。以下，对其他的实施例进行说明。另外，在其他的实施例的结构中，对与上述实施例1的结构相同的部分标注相同的符号并省略其说明。
(实施例2)
在实施例2的半导体装置102中，IGBT区域106中的n柱区134的杂质浓度高于二极管区域108中的n柱区142的杂质浓度。例如，实施例2的IGBT区域106中的n柱区134的杂质浓度为1×1016～1×1019[cm-3]左右，二极管区域108中的n柱区142的杂质浓度为1×1016～1×1019[cm-3]左右，IGBT区域106中的n柱区134的杂质浓度被设定为高于二极管区域108中的n柱区142的杂质浓度。杂质浓度的不同能够通过各n柱区134、142中的平均浓度来进行比较。
在实施例2中，由于n柱区134、142的杂质浓度的不同，从而半导体装置102作为二极管而进行工作时的发射极/阳极电极148与n势垒区116之间的n柱区134的电阻值小于发射极/阳极电极148与n势垒区122之间的n柱区142的电阻值。由此，能够对由于将IGBT区域106的栅电极130设为导通/断开而导致的二极管区域108内的电压变动进行抑制。此外，由于能够在不改变半导体装置的大小的条件下通过对杂质浓度进行调节而对电阻值进行调节，因此不会使半导体装置大型化。
(实施例3)
在实施例3的半导体装置102中，IGBT区域106中的n柱区134的截面面积大于二极管区域108中的n柱区142的截面面积。截面面积在图1的x-z截面中进行计测。
在实施例3中，由于n柱区134、142的截面面积不同，从而半导体装置102作为二极管而进行工作时的发射极/阳极电极148与n势垒区116之间的n柱区134的电阻值小于发射极/阳极电极148与n势垒区122之间的n柱区142的电阻值。由此，能够对由于将IGBT区域106的栅电极130设为导通/断开而导致的二极管区域108中的电压变动进行抑制。
(实施例4)
在实施例4的半导体装置102中，IGBT区域106中的n势垒区116的杂质浓度高于二极管区域108中的n势垒区122。例如，实施例2的IGBT区域106中的n势垒区116的杂质浓度为1×1015～1×1018[cm-3]左右，二极管区域108中的n势垒区122的杂质浓度为1×1015～1×1018[cm-3]左右，IGBT区域106中的n势垒区116的杂质浓度被设定为高于二极管区域108中的n势垒区122。杂质浓度的不同能够通过各n势垒区116、122内的平均浓度来进行比较。
在实施例4中，由于n势垒区116、122的杂质浓度不同，从而半导体装置102作为二极管而进行工作时的发射极/阳极电极148与n势垒区116之间的电阻值小于发射极/阳极电极148与n势垒区122之间的电阻值。由此，能够对由于将IGBT区域106的栅电极130设为导通/断开而导致的二极管区域108内的电压变动进行抑制。
(实施例5)
在实施例5的半导体装置102中，IGBT区域106中的从n柱区134的端部起在横向上延伸的势垒区116的长度长于二极管区域108中的从n柱区142的端部起在横向上延伸的n势垒区122的长度。IGBT区域106中的n势垒区116的长度相当于图3的x方向上的n柱区134的端部与沟槽126的端部之间的距离L1。此外，二极管区域108内的n势垒区122的长度相当于图3的x方向上的n柱区142的端部与沟槽126的端部之间的距离L2。
在实施例5中，由于n势垒区116、122的长度不同，从而半导体装置102作为二极管而进行工作时的发射极/阳极电极148与n势垒区116之间的电阻值小于发射极/阳极电极148与n势垒区122之间的电阻值。由此，能够对由于将IGBT区域106的栅电极130设为导通/断开而导致的二极管区域108内的电压变动进行抑制。
(实施例6)
在实施例6的半导体装置102中，IGBT区域106中的相邻的n柱区134彼此之间的间隔与二极管区域108中的相邻的n柱区142彼此之间的间隔相比较窄。IGBT区域106的n柱区134彼此之间的间隔相当于图4的y方向(沟槽126的长度方向)上的相邻的n柱区134的端部之间的距离W1。此外，二极管区域108的n柱区142彼此之间的间隔相当于图4的y方向(沟槽126的长度方向)上的相邻的n柱区142的端部之间的距离W2。
在实施例6中，由于n柱区134、142的间隔的不同，从而半导体装置102作为二极管而进行工作时的发射极/阳极电极148与n势垒区116之间的n柱区134的电阻值小于发射极/阳极电极148与n势垒区122之间的n柱区142的电阻值。由此，能够对由于将IGBT区域106的栅电极130设为导通/断开而导致的二极管区域108中的电压变动进行抑制。
(实施例7)
在实施例7的半导体装置102中，IGBT区域106中的上部体区118的杂质浓度低于二极管区域108中的上部阳极区124的杂质浓度。例如，实施例7的IGBT区域106中的上部体区118的杂质浓度为1×1016～1×1019[cm-3]左右，二极管区域108中的上部阳极区124的杂质浓度为1×1016～1×1019[cm-3]左右，IGBT区域106的上部体区118的杂质浓度被设定为低于二极管区域108的上部阳极区124的杂质浓度。杂质浓度的不同能够通过上部体区118以及上部阳极区124内的平均浓度来进行比较。在实施例7中，由于上部体区118与上部阳极区124的杂质浓度不同，从而在未向集电极/阴极电极146与发射极/阳极电极148之间(即，阴极电极与阳极电极之间以及集电极与发射极之间)施加电压的状态下，IGBT区域106中的发射极/阳极电极148与第二势垒区116之间的空穴的量少于二极管区域108中的发射极/阳极电极148与势垒区122之间的空穴的量。因此，与二极管区域108相比，在IGBT区域106中，进一步抑制了从上部体区118向第二n-漂移区115的空穴的注入。由此，减小了寄生二极管对二极管电流的影响，从而能够对由于将IGBT区域106的栅电极130设为导通/断开而导致的二极管区域108内的电压变动进行抑制。
(实施例8)
在实施例8的半导体装置102中，IGBT区域106中的p+接触区136的杂质浓度低于二极管区域108中的p+接触区144的杂质浓度。例如，实施例8的IGBT区域106中的p+接触区136的杂质浓度为1×1017～1×1020[cm-3]左右，二极管区域108中的p+接触区144的杂质浓度为1×1017～1×1020[cm-3]左右，IGBT区域106中的p+接触区136的杂质浓度被设定为低于二极管区域108中的p+接触区144的杂质浓度。杂质浓度的不同能够通过各p+接触区136、144中的平均浓度来进行比较。在实施例8中，由于各p+接触区136、144的杂质浓度不同，从而在未向集电极/阴极电极146与发射极/阳极电极148之间(即，阴极电极与阳极电极之间以及集电极与发射极之间)施加电压的状态下，IGBT区域106内的发射极/阳极电极148与第二势垒区116之间的空穴的量少于二极管区域108中的发射极/阳极电极148与势垒区122之间的空穴的量。因此，与二极管区域108相比，在IGBT区域106中，进一步抑制了从p+接触区136向第二n-漂移区115的空穴的注入。由此，减小了寄生二极管对二极管电流的影响，从而能够对由于将IGBT区域106的栅电极130设为导通/断开而导致的二极管区域108内的电压变动进行抑制。
(实施例9)
在实施例9的半导体装置102中，IGBT区域106中的p+接触区136的截面面积小于二极管区域108中的p+接触区144的截面面积。截面面积在图1的x-z截面中进行计测。在实施例9中，由于各p+接触区136、144的截面面积不同，从而在未向集电极/阴极电极146与发射极/阳极电极148之间(即，阴极电极与阳极电极之间以及集电极与发射极之间)施加电压的状态下，IGBT区域106中的发射极/阳极电极148与第二势垒区116之间的空穴的量少于二极管区域108中的发射极/阳极电极148与势垒区122之间的空穴的量。因此，与二极管区域108相比，在IGBT区域106中，进一步抑制了从p+接触区136向第二n-漂移区115的空穴的注入。由此，减小了寄生二极管对二极管电流的影响，从而能够对由于将IGBT区域106的栅电极130设为导通/断开而导致的二极管区域108中的电压变动进行抑制。
虽然在上文中对本发明的具体示例进行了详细说明，但这些只不过是示例，其并不对权利要求书进行限定。在专利权利要求书中所记载的技术中包括对上文所例示的具体示例进行了各种改变、变更的技术。本说明书或附图中所说明的技术要素通过单独或各种组合的方式而发挥技术上的有用性，并不限于申请时权利要求所记载的组合。此外，本说明书或附图所例示的技术为能够同时达到多个目的的技术，并且达到其中一个目的本身便具有技术上的有用性。
符号说明
102半导体装置；104半导体基板；106IGBT区域；108二极管区域；110p+集电区；112n缓冲区；114第一n-漂移区；115第二n-漂移区；116n势垒区；118上部体区；120n+阴极区；122n势垒区；124上部阳极区；126沟槽；128绝缘膜；129绝缘膜；130栅电极；132n+发射区；134n柱区；134a柱电极；136p+接触区；138绝缘膜；140栅电极；142n柱区；142a柱电极；144p+接触区；146集电极/阴极电极；148发射极/阳极电极；150肖特基界面；152肖特基界面；166下部体区；168下部阳极区。

Claims (4)

1.一种半导体装置，其在同一半导体基板中具备二极管区域以及绝缘栅双极型晶体管区域，其中，
所述二极管区域具备：阴极电极；阴极区，其由第一导电型的半导体构成；第一漂移区，其由低浓度的第一导电型的半导体构成；下部阳极区，其由第二导电型的半导体构成；上部阳极区，其由第二导电型的半导体构成；阳极电极，其由金属构成；第一势垒区，其被形成在所述下部阳极区与所述上部阳极区之间，并由与所述漂移区相比浓度较高的第一导电型的半导体构成；第一柱区，其以对所述第一势垒区与所述阳极电极进行连接的方式而形成，并由与所述势垒区相比浓度较高的第一导电型的半导体构成，
所述第一柱区与所述阳极电极形成肖特基结，
所述绝缘栅双极型晶体管区域具备：集电极；集电区，其由第二导电型的半导体构成；第二漂移区，其从所述第一漂移区连续，并由低浓度的第一导电型的半导体构成；下部体区，其由第二导电型的半导体构成；上部体区，其由第二导电型的半导体构成；发射区，其由第一导电型的半导体构成；发射极，其由金属构成；栅电极，其隔着绝缘膜而与所述发射区和所述第二漂移区之间的所述上部体区及所述下部体区对置；第二势垒区，其被形成在所述下部体区与所述上部体区之间，并由与所述第二漂移区相比浓度较高的第一导电型的半导体构成；第二柱区，其以对所述第二势垒区与所述发射极进行连接的方式而形成，并由与所述第二势垒区相比浓度较高的第一导电型的半导体构成，
所述第二柱区与所述发射极形成肖特基结，
所述半导体装置作为二极管而工作时的所述发射极与所述第二势垒区之间的第二柱区的电阻值小于所述阳极电极与所述第一势垒区之间的第一柱区的电阻值。
2.如权利要求1所述的半导体装置，其中，
所述第二柱区与所述发射极的接合面的面积大于所述第一柱区与所述阳极电极的接合面的面积。
3.如权利要求1或2所述的半导体装置，其中，
所述第二柱区的杂质浓度高于所述第一柱区的杂质浓度。
4.如权利要求1至3中任一项所述的半导体装置，其中，
在未向所述阴极电极与所述阳极电极之间以及所述集电极与所述发射极之间施加电压的状态下，所述发射极与所述第二势垒区之间的空穴的量少于所述阳极电极与所述第一势垒区之间的空穴的量。
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