JP6126150B2 - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 139
- 230000004888 barrier function Effects 0.000 claims description 125
- 210000000746 body region Anatomy 0.000 claims description 93
- 239000012535 impurity Substances 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 44
- 238000011084 recovery Methods 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 15
- 230000002950 deficient Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本明細書または図面に説明した技術要素は、単独であるいは各種の組み合わせによって技術的有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
12 :半導体基板
12a :表面
12b :裏面
16 :IGBT領域
18 :ダイオード領域
20 :エミッタ領域
22 :表面側ボディ領域
23 :バリア領域
24 :ピラー領域
25 :裏面側ボディ領域
26 :ドリフト領域
32 :コレクタ領域
34 :表面側アノード領域
35 :バリア領域
36 :ピラー領域
37 :裏面側アノード領域
38 :カソード領域
42 :ゲート絶縁膜
44 :ゲート電極
48 :ショットキー接合
49 :pn接合
54 :制御電極
58 :ショットキー接合
59 :pn接合
60 :上部電極
62 :下部電極
Claims (8)
- ダイオード領域とIGBT領域を有する半導体基板と、
前記ダイオード領域内の前記半導体基板の表面に形成されているアノード電極と、
前記ダイオード領域内の前記半導体基板の裏面に形成されているカソード電極と、
前記IGBT領域内の前記表面に形成されているエミッタ電極と、
前記IGBT領域内の前記裏面に形成されているコレクタ電極と、
ゲート絶縁膜と、
ゲート電極、
を有しており、
前記ダイオード領域が、
前記アノード電極に接続されているp型の表面側アノード領域と、
前記表面側アノード領域の裏面側に配置されているn型のダイオードバリア領域と、
前記表面から前記表面側アノード領域を貫通して前記ダイオードバリア領域に達しており、前記アノード電極に接続されているn型のダイオードピラー領域と、
前記ダイオードバリア領域の裏面側に配置されており、前記ダイオードバリア領域によって前記表面側アノード領域から分離されており、前記表面側アノード領域よりも低いp型不純物濃度を有するp型の裏面側アノード領域と、
前記裏面側アノード領域の裏面側に配置されており、前記裏面側アノード領域によって前記ダイオードバリア領域から分離されており、前記カソード電極に接続されているn型のカソード領域、
を有しており、
前記IGBT領域が、
前記エミッタ電極に接続されているn型のエミッタ領域と、
前記エミッタ領域の裏面側に配置されているp型の表面側ボディ領域と、
前記表面側ボディ領域の裏面側に配置されており、前記表面側ボディ領域によって前記エミッタ領域から分離されているn型のIGBTバリア領域と、
前記IGBTバリア領域の裏面側に配置されており、前記IGBTバリア領域によって前記表面側ボディ領域から分離されており、前記表面側ボディ領域よりも低いp型不純物濃度を有するp型の裏面側ボディ領域と、
前記裏面側ボディ領域の裏面側に配置されており、前記カソード領域と繋がっており、前記裏面側ボディ領域によって前記IGBTバリア領域から分離されているn型のIGBTドリフト領域と、
前記IGBTドリフト領域の裏面側に配置されており、前記IGBTドリフト領域によって前記裏面側ボディ領域から分離されており、前記コレクタ電極に接続されているp型のコレクタ領域、
を有しており、
前記ゲート電極が、前記エミッタ領域と前記IGBTドリフト領域の間を分離している範囲の前記表面側ボディ領域と前記裏面側ボディ領域に対して前記ゲート絶縁膜を介して対向しており、
前記ゲート電極にゲートオフ電位が印加されている場合に、前記IGBTバリア領域と前記エミッタ電極の間の抵抗が、前記ダイオードバリア領域と前記アノード電極の間の抵抗よりも高い、
半導体装置。 - 前記IGBT領域が、前記表面から前記表面側ボディ領域を貫通して前記IGBTバリア領域に達しており、前記エミッタ電極に接続されているn型のIGBTピラー領域を有している請求項1の半導体装置。
- 前記半導体基板の厚み方向に直交する平面における前記IGBTピラー領域の断面積が、前記平面における前記ダイオードピラー領域の断面積よりも小さい請求項2の半導体装置。
- 前記ダイオード領域が、第1ダイオードピラー領域と、前記第1ダイオードピラー領域よりも前記IGBT領域から離れた位置に配置されている第2ダイオードピラー領域を有しており、
前記第1ダイオードピラー領域の前記断面積が、前記第2ダイオードピラー領域の前記断面積よりも小さい請求項3の半導体装置。 - 前記IGBTピラー領域のn型不純物濃度が、前記ダイオードピラー領域のn型不純物濃度よりも低い請求項2〜4の何れか一項の半導体装置。
- 前記ダイオード領域が、第1ダイオードピラー領域と、前記第1ダイオードピラー領域よりも前記IGBT領域から離れた位置に配置されている第2ダイオードピラー領域を有しており、
前記第1ダイオードピラー領域のn型不純物濃度が、前記第2ダイオードピラー領域のn型不純物濃度よりも低い請求項5の半導体装置。 - 前記半導体基板の厚み方向において、前記IGBTピラー領域が前記ダイオードピラー領域よりも長い請求項2〜6のいずれか一項の半導体装置。
- 前記ダイオード領域が、第1ダイオードピラー領域と、前記第1ダイオードピラー領域よりも前記IGBT領域から離れた位置に配置されている第2ダイオードピラー領域を有しており、
前記半導体基板の厚み方向において、前記第1ダイオードピラー領域が、前記第2ダイオードピラー領域よりも長い請求項7の半導体装置。
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JP2015045292A JP6126150B2 (ja) | 2015-03-06 | 2015-03-06 | 半導体装置 |
US15/061,469 US9685512B2 (en) | 2015-03-06 | 2016-03-04 | Semiconductor device |
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JP2018137392A (ja) * | 2017-02-23 | 2018-08-30 | トヨタ自動車株式会社 | 半導体装置 |
JP6811118B2 (ja) * | 2017-02-27 | 2021-01-13 | 株式会社豊田中央研究所 | Mosfet |
JP6852541B2 (ja) * | 2017-04-20 | 2021-03-31 | 株式会社デンソー | 半導体装置 |
JP7143575B2 (ja) | 2017-07-18 | 2022-09-29 | 富士電機株式会社 | 半導体装置 |
JP6946922B2 (ja) * | 2017-10-18 | 2021-10-13 | 株式会社デンソー | 半導体装置 |
US10847617B2 (en) | 2017-12-14 | 2020-11-24 | Fuji Electric Co., Ltd. | Semiconductor device |
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JP5981859B2 (ja) * | 2013-02-15 | 2016-08-31 | 株式会社豊田中央研究所 | ダイオード及びダイオードを内蔵する半導体装置 |
US9508710B2 (en) * | 2013-08-26 | 2016-11-29 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
JP6242633B2 (ja) * | 2013-09-03 | 2017-12-06 | 株式会社東芝 | 半導体装置 |
JP2015056486A (ja) * | 2013-09-11 | 2015-03-23 | 株式会社東芝 | 半導体装置およびその製造方法 |
DE102013220011A1 (de) * | 2013-10-02 | 2015-04-02 | Robert Bosch Gmbh | Halbleiteranordnung mit temperaturkompensierter Durchbruchsspannung |
JP5918288B2 (ja) * | 2014-03-03 | 2016-05-18 | トヨタ自動車株式会社 | 半導体装置 |
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2015
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US20160260710A1 (en) | 2016-09-08 |
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