JP6281548B2 - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 169
- 210000000746 body region Anatomy 0.000 claims description 90
- 230000004888 barrier function Effects 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 48
- 239000012535 impurity Substances 0.000 claims description 18
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- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- -1 helium ions Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本明細書または図面に説明した技術要素は、単独であるいは各種の組み合わせによって技術的有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
12 :半導体基板
12a :上面
12b :下面
14 :上部電極
16 :下部電極
20 :IGBT範囲
22 :エミッタ領域
24 :ボディ領域
24a :IGBTボディ領域
24b :アノード領域
25a :ボディコンタクト領域
25b :低濃度ボディ領域
25c :上側低濃度ボディ領域
25d :下側低濃度ボディ領域
26a :アノードコンタクト領域
26b :低濃度アノード領域
27 :ドリフト領域
28 :バッファ領域
30 :コレクタ領域
32 :ゲート絶縁膜
34 :ゲート電極
36 :層間絶縁膜
38 :バリア領域
39 :ピラー領域
40 :ダイオード範囲
44 :カソード領域
46 :絶縁膜
48 :ダミー電極
50 :層間絶縁膜
52 :ライフタイム制御領域
60 :トレンチ
62 :トレンチ間半導体領域
82 :境界
Claims (2)
- IGBTとダイオードを備える半導体装置であって、
半導体基板と、
前記半導体基板の上面を覆っている上部電極と、
前記半導体基板の下面を覆っている下部電極、
を有しており、
前記半導体基板が、
前記上部電極に接しているp型のボディ領域と、
前記ボディ領域の下側に配置されているn型のドリフト領域と、
前記ドリフト領域の下側の一部範囲に配置されており、前記下部電極に接しており、前記ドリフト領域よりもn型不純物濃度が高いn型のカソード領域と、
前記ドリフト領域の下側の一部範囲に配置されており、前記カソード領域に隣接する位置で前記下部電極に接しているp型のコレクタ領域、
を有しており、
前記半導体基板の前記上面に、前記ボディ領域を貫通して前記ドリフト領域に達するトレンチが複数配置されており、
前記各トレンチ内に、絶縁膜によって前記半導体基板及び前記上部電極から絶縁されているトレンチ電極が配置されており、
前記半導体基板が、2つの前記トレンチに挟まれたトレンチ間半導体領域を複数個有しており、
前記複数のトレンチ間半導体領域が、互いに隣接する複数の第1トレンチ間半導体領域と、互いに隣接する複数の第2トレンチ間半導体領域を有しており、
前記各第1トレンチ間半導体領域が、前記上部電極と前記絶縁膜に接しているとともに前記ボディ領域によって前記ドリフト領域から分離されているn型のエミッタ領域を有しており、
前記各第2トレンチ間半導体領域が、前記エミッタ領域を有しておらず、
前記半導体基板を平面視したときに前記複数の第1トレンチ間半導体領域が位置する範囲がIGBT範囲であり、前記半導体基板を平面視したときに前記複数の第2トレンチ間半導体領域が位置する範囲がダイオード範囲であり、
前記コレクタ領域の少なくとも一部が前記IGBT範囲内に配置されており、
前記カソード領域の少なくとも一部が前記ダイオード範囲内に配置されており、
前記カソード領域と前記コレクタ領域の境界が、前記IGBT範囲と前記ダイオード範囲の境界に位置する境界トレンチと前記境界トレンチに隣接するトレンチ間半導体領域の直下の範囲内に位置しており、
前記ドリフト領域の中間深さよりも上面側の前記ドリフト領域内において前記半導体基板の平面方向に沿って伸びており、その周囲の前記ドリフト領域よりも結晶欠陥密度が高い上面側ライフタイム制御領域が、前記ダイオード範囲内に形成されているとともに前記IGBT範囲内に形成されておらず、
前記2トレンチ間半導体領域に隣接する前記第1トレンチ間半導体領域である境界部第1トレンチ間半導体領域が、前記ボディ領域と前記ドリフト領域の間に配置されているとともに前記ドリフト領域よりもn型不純物濃度が高いn型のバリア領域と、前記上部電極に接する位置から前記バリア領域に接する位置まで伸びるn型のピラー領域をさらに有しており、
前記各第2トレンチ間半導体領域が、前記ピラー領域を有しておらず、
前記バリア領域と前記ドリフト領域の間に、p型の下部ボディ領域が配置されており、
前記境界部第1トレンチ間半導体領域以外の前記各第1トレンチ間半導体領域が、前記バリア領域と前記ピラー領域を有さない、
半導体装置。 - 前記カソード領域と前記コレクタ領域の境界が、前記IGBT範囲と前記ダイオード範囲の境界部に位置する前記トレンチの直下の範囲内に位置する請求項1の半導体装置。
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JP2015184349A JP6281548B2 (ja) | 2015-09-17 | 2015-09-17 | 半導体装置 |
US15/218,819 US9613950B1 (en) | 2015-09-17 | 2016-07-25 | Semiconductor device |
DE102016116564.6A DE102016116564B4 (de) | 2015-09-17 | 2016-09-05 | Halbleitervorrichtung |
CN201610827502.0A CN107039438B (zh) | 2015-09-17 | 2016-09-14 | 半导体装置 |
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JP6281548B2 true JP6281548B2 (ja) | 2018-02-21 |
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JP (1) | JP6281548B2 (ja) |
CN (1) | CN107039438B (ja) |
DE (1) | DE102016116564B4 (ja) |
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CN108417621A (zh) * | 2017-02-10 | 2018-08-17 | 中芯国际集成电路制造(上海)有限公司 | 绝缘栅双极型晶体管及其形成方法 |
JP6729452B2 (ja) * | 2017-03-06 | 2020-07-22 | 株式会社デンソー | 半導体装置 |
JP6890271B2 (ja) * | 2017-03-21 | 2021-06-18 | パナソニックIpマネジメント株式会社 | 半導体装置およびその製造方法 |
DE102017118665A1 (de) | 2017-08-16 | 2019-02-21 | Infineon Technologies Ag | Rc-igbt |
JP6881599B2 (ja) * | 2017-12-06 | 2021-06-02 | 富士電機株式会社 | 半導体装置 |
JP7151084B2 (ja) * | 2018-01-11 | 2022-10-12 | 株式会社デンソー | 半導体装置 |
JP7003688B2 (ja) * | 2018-01-25 | 2022-01-20 | 株式会社デンソー | 半導体装置及びその製造方法 |
JP7091714B2 (ja) * | 2018-03-01 | 2022-06-28 | 株式会社デンソー | 半導体装置 |
JP2019160877A (ja) * | 2018-03-08 | 2019-09-19 | トヨタ自動車株式会社 | 半導体装置 |
JP7131003B2 (ja) * | 2018-03-16 | 2022-09-06 | 富士電機株式会社 | 半導体装置 |
JP6952631B2 (ja) * | 2018-03-20 | 2021-10-20 | 株式会社東芝 | 半導体装置 |
JP7172920B2 (ja) * | 2019-09-04 | 2022-11-16 | 株式会社デンソー | 半導体装置 |
DE102020134850A1 (de) * | 2020-12-23 | 2022-06-23 | Infineon Technologies Austria Ag | RC-IGBTVerfahren zum Herstellen eines RC-IGBT |
JP2024022285A (ja) * | 2022-08-05 | 2024-02-16 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
CN116435353A (zh) * | 2023-06-08 | 2023-07-14 | 广东巨风半导体有限公司 | 一种逆导绝缘栅双极型晶体管结构及其制备方法 |
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JP5206541B2 (ja) | 2008-04-01 | 2013-06-12 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP4788734B2 (ja) * | 2008-05-09 | 2011-10-05 | トヨタ自動車株式会社 | 半導体装置 |
DE112009004065B4 (de) | 2009-09-14 | 2019-02-21 | Toyota Jidosha Kabushiki Kaisha | Halbleitereinrichtung mit einem Halbleitersubstrat einschließlich eines Diodenbereichs und eines IGBT-Bereichs |
DE112012003111T5 (de) * | 2011-07-27 | 2014-04-10 | Toyota Jidosha Kabushiki Kaisha | Diode, Halbleitervorrichtung und Mosfet |
JP5981659B2 (ja) * | 2013-08-26 | 2016-08-31 | トヨタ自動車株式会社 | 半導体装置 |
DE112013007576B4 (de) * | 2013-11-05 | 2022-02-03 | Denso Corporation | Halbleitereinrichtung |
JP6119593B2 (ja) * | 2013-12-17 | 2017-04-26 | トヨタ自動車株式会社 | 半導体装置 |
JP2015153784A (ja) * | 2014-02-10 | 2015-08-24 | トヨタ自動車株式会社 | 半導体装置の製造方法及び半導体装置 |
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