JP2019161112A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2019161112A JP2019161112A JP2018048303A JP2018048303A JP2019161112A JP 2019161112 A JP2019161112 A JP 2019161112A JP 2018048303 A JP2018048303 A JP 2018048303A JP 2018048303 A JP2018048303 A JP 2018048303A JP 2019161112 A JP2019161112 A JP 2019161112A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 210000000746 body region Anatomy 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 230000004888 barrier function Effects 0.000 claims description 48
- 239000012535 impurity Substances 0.000 claims description 30
- 238000011084 recovery Methods 0.000 abstract description 21
- 238000000034 method Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 4
- 239000011229 interlayer Substances 0.000 description 6
- 230000003111 delayed effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
Description
Claims (3)
- IGBT領域とダイオード領域を有する半導体基板を備える半導体装置であって、
前記IGBT領域内と前記ダイオード領域内の前記半導体基板の上面に設けられた複数のトレンチと、
前記トレンチの内面を覆う絶縁膜と、
前記トレンチ内に配置されており、前記絶縁膜によって前記半導体基板から絶縁されている制御電極と、
前記半導体基板の前記上面に設けられた上部電極と、
前記半導体基板の下面に設けられた下部電極、
を備えており、
前記ダイオード領域が、
前記上面に露出しており、前記絶縁膜に接しており、前記上部電極に接続されているn型のバイパス領域と、
前記上面に露出しており、前記上部電極に接続されているp型のアノードコンタクト領域と、
前記バイパス領域と前記アノードコンタクト領域の下側に配置されており、前記バイパス領域の下側で前記絶縁膜に接しており、前記アノードコンタクト領域のp型不純物濃度よりも低いp型不純物濃度を有するp型のボディ領域と、
前記ボディ領域の下側で前記絶縁膜に接しているn型のドリフト領域と、
前記ドリフト領域の下側に配置されており、前記半導体基板の下面に露出しており、前記ドリフト領域のn型不純物濃度よりも高いn型不純物濃度を有しており、前記下部電極に接続されているn型のカソード領域、
を有しており、
前記アノードコンタクト領域の下端の位置が、前記バイパス領域の下端の位置よりも下側である、
半導体装置。 - 前記ダイオード領域が、
前記ボディ領域と前記ドリフト領域の間に配置されており、前記ボディ領域の下側で前記絶縁膜に接しており、前記ドリフト領域のn型不純物濃度よりも高いn型不純物濃度を有するn型のバリア領域と、
前記バリア領域と前記ドリフト領域の間に配置されており、前記バリア領域の下側で前記絶縁膜に接しており、前記バリア領域と前記ドリフト領域を分離するp型の下部ボディ領域、
をさらに有している、請求項1に記載の半導体装置。 - 前記ダイオード領域が、
前記半導体基板の前記上面から、前記アノードコンタクト領域と前記ボディ領域を貫通して前記バリア領域まで伸びるn型のピラー領域をさらに有している、請求項2に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018048303A JP2019161112A (ja) | 2018-03-15 | 2018-03-15 | 半導体装置 |
US16/279,273 US20190287963A1 (en) | 2018-03-15 | 2019-02-19 | Semiconductor device |
DE102019106480.5A DE102019106480A1 (de) | 2018-03-15 | 2019-03-14 | Halbleitervorrichtung |
CN201910194403.7A CN110277442A (zh) | 2018-03-15 | 2019-03-14 | 半导体装置 |
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JP2009253004A (ja) * | 2008-04-07 | 2009-10-29 | Toyota Motor Corp | 半導体素子と半導体装置とその駆動方法 |
JP2013065735A (ja) * | 2011-09-19 | 2013-04-11 | Denso Corp | 半導体装置 |
JP2014075582A (ja) * | 2012-09-12 | 2014-04-24 | Fuji Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
WO2016009616A1 (ja) * | 2014-07-14 | 2016-01-21 | 株式会社デンソー | 半導体装置 |
JP2016115766A (ja) * | 2014-12-12 | 2016-06-23 | 株式会社豊田中央研究所 | 逆導通igbt |
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JP6283468B2 (ja) | 2013-03-01 | 2018-02-21 | 株式会社豊田中央研究所 | 逆導通igbt |
US9574024B1 (en) | 2016-07-12 | 2017-02-21 | The Goodyear Tire & Rubber Company | Method of making a functionalized elastomer via allylboration |
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JP2009253004A (ja) * | 2008-04-07 | 2009-10-29 | Toyota Motor Corp | 半導体素子と半導体装置とその駆動方法 |
JP2013065735A (ja) * | 2011-09-19 | 2013-04-11 | Denso Corp | 半導体装置 |
JP2014075582A (ja) * | 2012-09-12 | 2014-04-24 | Fuji Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
WO2016009616A1 (ja) * | 2014-07-14 | 2016-01-21 | 株式会社デンソー | 半導体装置 |
JP2016115766A (ja) * | 2014-12-12 | 2016-06-23 | 株式会社豊田中央研究所 | 逆導通igbt |
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US20190287963A1 (en) | 2019-09-19 |
CN110277442A (zh) | 2019-09-24 |
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