JP5865860B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5865860B2 JP5865860B2 JP2013062969A JP2013062969A JP5865860B2 JP 5865860 B2 JP5865860 B2 JP 5865860B2 JP 2013062969 A JP2013062969 A JP 2013062969A JP 2013062969 A JP2013062969 A JP 2013062969A JP 5865860 B2 JP5865860 B2 JP 5865860B2
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- 239000004065 semiconductor Substances 0.000 title claims description 186
- 229910052751 metal Inorganic materials 0.000 claims description 71
- 239000002184 metal Substances 0.000 claims description 71
- 239000012535 impurity Substances 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 284
- 230000004888 barrier function Effects 0.000 description 83
- 239000012212 insulator Substances 0.000 description 22
- 239000004020 conductor Substances 0.000 description 20
- 238000009826 distribution Methods 0.000 description 16
- 239000007769 metal material Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 14
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- 230000015556 catabolic process Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 6
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- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000008034 disappearance Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Description
前記第1半導体領域は、前記第1電極の上に設けられる。前記第1半導体領域は、第1導電形の領域である。
前記第2半導体領域は、前記第1半導体領域の上に設けられる。前記第2半導体領域は、第1不純物濃度を有する第2導電形の領域である。
前記第3半導体領域は、前記第1半導体領域の上に設けられる。前記第3半導体領域は、前記第1不純物濃度よりも低い第2不純物濃度を有する第2導電形の領域である。前記第3半導体領域は、前記第1半導体領域と前記第2半導体領域との間に位置する部分を有する。前記部分は、前記第1半導体領域に向けて凸になるよう湾曲している。
前記第2電極は、前記第2半導体領域及び前記第3半導体領域の上に設けられる。前記第2電極は、前記第2半導体領域とオーミック接触する。
前記第1中間金属膜は、前記第2電極と前記第3半導体領域との間に設けられる。前記第1中間金属膜は、前記第3半導体領域とショットキー接合する。
なお、以下の説明において、n+、n、n−及びp+、p、p−の表記は、各導電形における不純物濃度の相対的な高低を表す。すなわち、n+はnよりもn形の不純物濃度が相対的に高く、n−はnよりもn形の不純物濃度が相対的に低いことを示す。また、p+はpよりもp形の不純物濃度が相対的に高く、p−はpよりもp形の不純物濃度が相対的に低いことを示す。
また、以下の説明では、一例として、第1導電形をn形、第2導電形をp形とした具体例を挙げる。
図1は、第1の実施形態に係る半導体装置を例示する模式的断面図である。
図1に表したように、第1の実施形態に係る半導体装置110は、第1電極であるカソード電極81と、第4半導体領域であるn+形カソード層10と、第1半導体領域であるn−形ベース層20と、第2半導体領域であるp+形アノード層30と、第3半導体領域であるp−形アノード層40と、第2電極であるアノード電極82と、第1中間金属膜である第1バリアメタル51と、を備える。半導体装置110は、例えばダイオードである。
図2(a)及び(b)は、半導体装置の動作を説明する模式的断面図である。
図2(a)はオン状態を説明する模式的断面図、図2(b)はオフ状態を説明する模式的断面図である。
先ず、図2(a)に表したように、カソード電極81の電位よりもアノード電極82の電位のほうが高くなるようにアノード・カソード間に電圧(順バイアス)を印加すると、半導体装置110はオン状態になる。
これにより、半導体装置110では、スイッチング速度が高速化する。
図3(a)〜(c)は、半導体装置の製造方法を例示する模式的断面図である。
先ず、図3(a)に表したように、n+形カソード層10と、n形バッファ層11と、n−形ベース層20と、p−形アノード層40と、を含む構造体100を準備する。次に、構造体100のp−形アノード層40側の第1面100aに、選択的にp+形アノード層30を形成する。
次に、第2の実施形態について説明する。
図4は、第2の実施形態に係る半導体装置を例示する模式的断面図である。
図4に表したように、第2の実施形態に係る半導体装置120は、カソード電極81と、n+形カソード層10と、n−形ベース層20と、p+形アノード層30と、p−形アノード層40と、アノード電極82と、第1バリアメタル51と、絶縁体60と、を備える。半導体装置120は、例えばダイオードである。
図5(a)及び(b)は、半導体装置の動作を説明する模式的断面図である。
図5(a)はオン状態を説明する模式的断面図、図5(b)はオフ状態を説明する模式的断面図である。
先ず、図5(a)に表したように、カソード電極81の電位よりもアノード電極82の電位のほうが高くなるようにアノード・カソード間に電圧(順バイアス)を印加すると、半導体装置120はオン状態になる。
これにより、半導体装置120では、スイッチング速度が高速化する。
図6(a)〜(c)は、半導体装置の製造方法を例示する模式的断面図である。
先ず、図6(a)に表したように、n+形カソード層10と、n形バッファ層11と、n−形ベース層20と、p−形アノード層40と、を含む構造体100を準備する。次に、構造体100のp−形アノード層40側の第1面100aに、選択的にp+形アノード層30を形成する。
次に、第3の実施形態について説明する。
図7は、第3の実施形態に係る半導体装置を例示する模式的断面図である。
図7に表したように、第3の実施形態に係る半導体装置130は、カソード電極81と、n+形カソード層10と、n−形ベース層20と、p+形アノード層30と、p−形アノード層40と、アノード電極82と、第1バリアメタル51と、導電体70と、絶縁膜61と、を備える。半導体装置130は、例えばダイオードである。
図8(a)〜(c)は、半導体装置の製造方法を例示する模式的断面図である。
先ず、図8(a)に表したように、n+形カソード層10と、n形バッファ層11と、n−形ベース層20と、p−形アノード層40と、を含む構造体100を準備する。次に、構造体100のp−形アノード層40側の第1面100aに、選択的にp+形アノード層30を形成する。
次に、第4の実施形態について説明する。
図9は、第4の実施形態に係る半導体装置を例示する模式的断面図である。
図9に表したように、第4の実施形態に係る半導体装置140は、カソード電極81と、n+形カソード層10と、n−形ベース層20と、p+形アノード層30と、p−形アノード層40と、アノード電極82と、第1バリアメタル51と、を備える。半導体装置140は、例えばダイオードである。
図10(a)〜(c)は、半導体装置の製造方法を例示する模式的断面図である。
先ず、図10(a)に表したように、n+形カソード層10と、n形バッファ層11と、n−形ベース層20と、を含む構造体101を準備する。次に、構造体101のn−形ベース層20側の第1面101aに、選択的にp−形領域40Rを形成する。p−形領域40Rを形成するには、構造体101の第1面101aにマスク(図示せず)を形成し、マスクの開口を介してp形の不純物をイオン注入する。
図11は、第5の実施形態に係る半導体装置を例示する模式的断面図である。
図11に表したように、第5の実施形態に係る半導体装置150は、カソード電極81と、n+形カソード層10と、n−形ベース層20と、p+形アノード層30と、p−形アノード層40と、アノード電極82と、n形バッファ層11と、第2中間金属膜である第2バリアメタル52と、を備える。半導体装置150は、例えばダイオードである。
カソード電極81の電位よりもアノード電極82の電位のほうが高くなるようにアノード・カソード間に電圧(順バイアス)を印加すると、半導体装置150はオン状態になる。
図12は、第6の実施形態に係る半導体装置を例示する模式的断面図である。
図12に表したように、第6の実施形態に係る半導体装置160は、図11に表した半導体装置150の構成に加え、第1バリアメタル51を備えている。すなわち、半導体装置160は、アノード電極82とp−形アノード層40との間に設けられた第1バリアメタル51を備えるとともに、カソード電極81とn形バッファ層11との間に設けられた第2バリアメタル52を備える。
図13には、n−形ベース層20のアノード側及びカソード側でのキャリア濃度分布が表されている。図13の分布C1は半導体装置160におけるキャリア濃度分布を模式的に表している。図13の分布C2は第1バリアメタル51及び第2バリアメタル52を備えない半導体装置におけるキャリア濃度分布を模式的に表している。
半導体装置160において、キャリア濃度のバランスは、p+形アノード層30の不純物濃度及びn+形カソード層10の不純物濃度を調整することにより行われる。
Claims (5)
- 第1電極と、
前記第1電極の上に設けられた第1導電形の第1半導体領域と、
前記第1半導体領域の上に設けられ第1不純物濃度を有する第2導電形の第2半導体領域と、
前記第1半導体領域と前記第2半導体領域との間に位置し、且つ前記第1半導体領域に向けて凸になるよう湾曲した部分を有し、前記第1半導体領域の上に設けられ前記第1不純物濃度よりも低い第2不純物濃度を有する第2導電形の第3半導体領域と、
前記第2半導体領域及び前記第3半導体領域の上に設けられ前記第2半導体領域とオーミック接触した第2電極と、
前記第2電極と前記第3半導体領域との間に設けられ前記第3半導体領域とショットキー接合した第1中間金属膜と、
を備えた半導体装置。 - 前記第1中間金属膜の材料における仕事関数は、前記第2電極の材料における仕事関数よりも大きい請求項1記載の半導体装置。
- 前記第1電極と前記第1半導体領域との間に設けられ第3不純物濃度を有する第1導電形の第4半導体領域と、
前記第1電極と前記第1半導体領域との間に設けられ、前記第3不純物濃度よりも低く前記第1半導体領域が有する第4不純物濃度よりも高い第5不純物濃度を有する第1導電形の第5半導体領域と、
前記第1電極と前記第5半導体領域との間に設けられ前記第5半導体領域とショットキー接合した第2中間金属膜と、
をさらに備えた請求項1または2に記載の半導体装置。 - 前記第1電極は、アルミニウムを含み、
前記第2中間金属膜は、チタン及びタングステンのいずれかを含む請求項3記載の半導体装置。 - 前記第2電極はアルミニウムを含み、
前記第1中間金属膜は、チタン及びタングステンのいずれかを含む請求項1〜4のいずれか1つに記載の半導体装置。
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