JP6804379B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6804379B2 JP6804379B2 JP2017085001A JP2017085001A JP6804379B2 JP 6804379 B2 JP6804379 B2 JP 6804379B2 JP 2017085001 A JP2017085001 A JP 2017085001A JP 2017085001 A JP2017085001 A JP 2017085001A JP 6804379 B2 JP6804379 B2 JP 6804379B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- type
- semiconductor device
- diffusion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 91
- 239000010410 layer Substances 0.000 claims description 169
- 238000009792 diffusion process Methods 0.000 claims description 55
- 239000012535 impurity Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 23
- 239000011229 interlayer Substances 0.000 claims description 8
- 238000011084 recovery Methods 0.000 description 16
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 238000000926 separation method Methods 0.000 description 6
- 230000001939 inductive effect Effects 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Thyristors (AREA)
Description
まず、本発明の実施の形態に係る半導体装置について説明する前に、これと関連する電力用半導体装置(以下、「関連半導体装置」と記す)について説明する。
図1は、本発明の実施の形態1に係る半導体装置の構成を示す断面図である。以下、本実施の形態1で説明する構成要素のうち、関連半導体装置で説明した構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
図2は、本発明の実施の形態2に係る半導体装置の構成を示す平面図である。以下、本実施の形態2で説明する構成要素のうち、関連半導体装置で説明した構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
図3は、本発明の実施の形態3に係る半導体装置の構成を示す断面図である。以下、本実施の形態3で説明する構成要素のうち、関連半導体装置で説明した構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
図4は、本発明の実施の形態4に係る半導体装置の構成を示す断面図である。以下、本実施の形態4で説明する構成要素のうち、関連半導体装置で説明した構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
図5は、本発明の実施の形態5に係る半導体装置の構成を示す断面図である。以下、本実施の形態5で説明する構成要素のうち、実施の形態4に係る半導体装置で説明した構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
図6は、本発明の実施の形態6に係る半導体装置の構成を示す断面図である。以下、本実施の形態6で説明する構成要素のうち、実施の形態4に係る半導体装置で説明した構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
図7は、本発明の実施の形態7に係る半導体装置の構成を示す平面図であり、図8は、当該構成を示す断面図である。以下、本実施の形態7で説明する構成要素のうち、関連半導体装置で説明した構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
Claims (2)
- 還流ダイオードが配設された第1領域と、IGBT(Insulated Gate Bipolar Transistor)が配設された第2領域と、平面視で前記第1領域及び前記第2領域を囲む耐圧保持領域とが規定された、第1主面及び第2主面を有する半導体基板と、
前記第1領域、前記第2領域及び前記耐圧保持領域の前記第1主面上に配設された表面電極と、
前記第1領域、前記第2領域及び前記耐圧保持領域の前記第2主面上に配設された裏面電極と
を備え、
前記半導体基板は、
前記第1領域の前記第1主面に配設された、第1導電型を有するアノード層と、
前記耐圧保持領域の前記第1主面に配設された、前記第1導電型を有する拡散層と、
前記第1領域の前記第2主面に配設された、第2導電型を有するカソード層と
を備え、
前記アノード層と前記拡散層とは、前記半導体基板のうち前記アノード層及び前記拡散層以外の部分によって離間され、
前記拡散層の前記第1導電型の不純物濃度は、前記アノード層の前記第1導電型の不純物濃度よりも高い、半導体装置。 - 請求項1に記載の半導体装置であって、
前記半導体基板の前記部分と前記表面電極とを離間する層間絶縁膜をさらに備える、半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017085001A JP6804379B2 (ja) | 2017-04-24 | 2017-04-24 | 半導体装置 |
US15/851,447 US20180308838A1 (en) | 2017-04-24 | 2017-12-21 | Semiconductor device and method of manufacturing semiconductor device |
DE102018200136.7A DE102018200136B4 (de) | 2017-04-24 | 2018-01-08 | Halbleitervorrichtung |
CN201810373333.7A CN108735737B (zh) | 2017-04-24 | 2018-04-24 | 半导体装置及半导体装置的制造方法 |
US16/875,457 US11610882B2 (en) | 2017-04-24 | 2020-05-15 | Semiconductor device and method of manufacturing semiconductor device |
US18/062,475 US20230106654A1 (en) | 2017-04-24 | 2022-12-06 | Semiconductor device and method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017085001A JP6804379B2 (ja) | 2017-04-24 | 2017-04-24 | 半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019217895A Division JP6843952B2 (ja) | 2019-12-02 | 2019-12-02 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018186111A JP2018186111A (ja) | 2018-11-22 |
JP6804379B2 true JP6804379B2 (ja) | 2020-12-23 |
Family
ID=63714384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017085001A Active JP6804379B2 (ja) | 2017-04-24 | 2017-04-24 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (3) | US20180308838A1 (ja) |
JP (1) | JP6804379B2 (ja) |
CN (1) | CN108735737B (ja) |
DE (1) | DE102018200136B4 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7192968B2 (ja) * | 2019-04-01 | 2022-12-20 | 三菱電機株式会社 | 半導体装置 |
DE112022001150T5 (de) * | 2021-03-26 | 2023-12-07 | Rohm Co., Ltd. | Halbleiterbauteil |
Family Cites Families (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100745557B1 (ko) * | 1999-02-17 | 2007-08-02 | 가부시키가이샤 히타치세이사쿠쇼 | Igbt 및 전력변환 장치 |
JP4761644B2 (ja) * | 2001-04-18 | 2011-08-31 | 三菱電機株式会社 | 半導体装置 |
JP2004363327A (ja) | 2003-06-04 | 2004-12-24 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
JP2006173437A (ja) | 2004-12-17 | 2006-06-29 | Toshiba Corp | 半導体装置 |
JP5011748B2 (ja) * | 2006-02-24 | 2012-08-29 | 株式会社デンソー | 半導体装置 |
JP5103830B2 (ja) | 2006-08-28 | 2012-12-19 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
JP5052091B2 (ja) | 2006-10-20 | 2012-10-17 | 三菱電機株式会社 | 半導体装置 |
JP5283326B2 (ja) | 2006-10-27 | 2013-09-04 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
EP2003694B1 (en) * | 2007-06-14 | 2011-11-23 | Denso Corporation | Semiconductor device |
JP4544313B2 (ja) * | 2008-02-19 | 2010-09-15 | トヨタ自動車株式会社 | Igbtとその製造方法 |
JP5206541B2 (ja) * | 2008-04-01 | 2013-06-12 | 株式会社デンソー | 半導体装置およびその製造方法 |
US8507352B2 (en) * | 2008-12-10 | 2013-08-13 | Denso Corporation | Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode |
JP5509908B2 (ja) * | 2010-02-19 | 2014-06-04 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP5515922B2 (ja) | 2010-03-24 | 2014-06-11 | 富士電機株式会社 | 半導体装置 |
DE112010005443B4 (de) * | 2010-04-02 | 2019-03-14 | Toyota Jidosha Kabushiki Kaisha | Halbleitervorrichtung mit einem Halbleitersubstrat mit einem Diodenbereich und einem IGBT-Bereich sowie Verfahren zu dessen Herstellung |
US8716746B2 (en) * | 2010-08-17 | 2014-05-06 | Denso Corporation | Semiconductor device |
JP5748353B2 (ja) * | 2011-05-13 | 2015-07-15 | 株式会社豊田中央研究所 | 横型半導体装置 |
JP5348276B2 (ja) * | 2011-07-04 | 2013-11-20 | 株式会社デンソー | 半導体装置 |
US9041051B2 (en) * | 2011-07-05 | 2015-05-26 | Mitsubishi Electric Corporation | Semiconductor device |
JP2013026534A (ja) | 2011-07-25 | 2013-02-04 | Toyota Central R&D Labs Inc | 半導体装置 |
JP5742962B2 (ja) * | 2011-11-09 | 2015-07-01 | トヨタ自動車株式会社 | 半導体装置およびその製造方法 |
US9385188B2 (en) * | 2012-01-12 | 2016-07-05 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device with termination region having floating electrodes in an insulating layer |
JP6022774B2 (ja) | 2012-01-24 | 2016-11-09 | トヨタ自動車株式会社 | 半導体装置 |
CN104170090B (zh) * | 2012-03-22 | 2017-02-22 | 丰田自动车株式会社 | 半导体装置 |
JP2013201237A (ja) * | 2012-03-23 | 2013-10-03 | Toshiba Corp | 半導体装置 |
JP2014103376A (ja) | 2012-09-24 | 2014-06-05 | Toshiba Corp | 半導体装置 |
DE112013004846T5 (de) | 2012-10-02 | 2015-06-11 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
US20150318385A1 (en) * | 2012-12-05 | 2015-11-05 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
JP6103038B2 (ja) * | 2013-03-21 | 2017-03-29 | 富士電機株式会社 | 半導体装置 |
EP2966683B1 (en) * | 2013-10-04 | 2020-12-09 | Fuji Electric Co., Ltd. | Semiconductor device |
JP6158058B2 (ja) * | 2013-12-04 | 2017-07-05 | 株式会社東芝 | 半導体装置 |
JP6142813B2 (ja) * | 2014-02-10 | 2017-06-07 | トヨタ自動車株式会社 | 半導体装置 |
JP6181597B2 (ja) * | 2014-04-28 | 2017-08-16 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6260515B2 (ja) * | 2014-11-13 | 2018-01-17 | 三菱電機株式会社 | 半導体装置 |
CN107112353B (zh) * | 2014-12-23 | 2020-12-22 | Abb电网瑞士股份公司 | 反向传导半导体装置 |
JP6668697B2 (ja) | 2015-05-15 | 2020-03-18 | 富士電機株式会社 | 半導体装置 |
JP6531589B2 (ja) * | 2015-09-17 | 2019-06-19 | 株式会社デンソー | 半導体装置 |
JP6260605B2 (ja) * | 2015-11-19 | 2018-01-17 | トヨタ自動車株式会社 | 半導体装置 |
DE112015007246T5 (de) * | 2015-12-28 | 2018-09-20 | Mitsubishi Electric Corporation | Halbleiterbauelement und verfahren zum herstellen eines halbleiterbauelements |
CN107086217B (zh) * | 2016-02-16 | 2023-05-16 | 富士电机株式会社 | 半导体装置 |
WO2017155122A1 (ja) * | 2016-03-10 | 2017-09-14 | 富士電機株式会社 | 半導体装置 |
JP6801324B2 (ja) * | 2016-09-15 | 2020-12-16 | 富士電機株式会社 | 半導体装置 |
JP7114873B2 (ja) * | 2016-10-14 | 2022-08-09 | 富士電機株式会社 | 半導体装置 |
WO2018074425A1 (ja) * | 2016-10-17 | 2018-04-26 | 富士電機株式会社 | 半導体装置 |
JP6598756B2 (ja) * | 2016-11-11 | 2019-10-30 | 三菱電機株式会社 | 電力用半導体装置およびその製造方法 |
CN113506800A (zh) * | 2016-12-16 | 2021-10-15 | 富士电机株式会社 | 半导体装置 |
JP6820738B2 (ja) * | 2016-12-27 | 2021-01-27 | 三菱電機株式会社 | 半導体装置、電力変換装置および半導体装置の製造方法 |
EP3480855B1 (en) * | 2017-02-15 | 2023-09-20 | Fuji Electric Co., Ltd. | Semiconductor device |
CN108447903B (zh) * | 2017-02-16 | 2023-07-04 | 富士电机株式会社 | 半导体装置 |
-
2017
- 2017-04-24 JP JP2017085001A patent/JP6804379B2/ja active Active
- 2017-12-21 US US15/851,447 patent/US20180308838A1/en not_active Abandoned
-
2018
- 2018-01-08 DE DE102018200136.7A patent/DE102018200136B4/de active Active
- 2018-04-24 CN CN201810373333.7A patent/CN108735737B/zh active Active
-
2020
- 2020-05-15 US US16/875,457 patent/US11610882B2/en active Active
-
2022
- 2022-12-06 US US18/062,475 patent/US20230106654A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20230106654A1 (en) | 2023-04-06 |
US20180308838A1 (en) | 2018-10-25 |
CN108735737B (zh) | 2024-02-27 |
DE102018200136A1 (de) | 2018-10-25 |
US20200279843A1 (en) | 2020-09-03 |
CN108735737A (zh) | 2018-11-02 |
DE102018200136B4 (de) | 2022-11-03 |
US11610882B2 (en) | 2023-03-21 |
JP2018186111A (ja) | 2018-11-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101309674B1 (ko) | 절연 게이트형 바이폴라 트랜지스터와 그 제조방법 | |
KR101742416B1 (ko) | 반도체 장치 | |
JP5787853B2 (ja) | 電力用半導体装置 | |
WO2018155566A1 (ja) | 炭化珪素半導体装置および電力変換装置 | |
JP5753814B2 (ja) | ダイオード、半導体装置およびmosfet | |
JP2013149798A (ja) | 炭化珪素半導体装置 | |
US20230106654A1 (en) | Semiconductor device and method of manufacturing semiconductor device | |
JP2013115223A (ja) | 半導体装置 | |
WO2013179379A1 (ja) | 絶縁ゲート型バイポーラトランジスタ | |
US10304969B2 (en) | Semiconductor device | |
US20150187678A1 (en) | Power semiconductor device | |
JP2010135646A (ja) | 半導体装置 | |
JP5865860B2 (ja) | 半導体装置 | |
JP2014112625A (ja) | 電力半導体素子およびその製造方法 | |
JP6598756B2 (ja) | 電力用半導体装置およびその製造方法 | |
JP6843952B2 (ja) | 半導体装置の製造方法 | |
JP2019075502A (ja) | 半導体装置 | |
JP6101440B2 (ja) | ダイオードおよびそれを用いた電力変換装置 | |
JP5465937B2 (ja) | 半導体装置、半導体装置の制御方法、半導体モジュール | |
US20150187869A1 (en) | Power semiconductor device | |
JP2013069801A (ja) | 半導体装置 | |
US9356116B2 (en) | Power semiconductor device and method of fabricating the same | |
WO2012042640A1 (ja) | 半導体装置 | |
WO2020006848A1 (zh) | 集成肖特基二极管的u型源槽vdmosfet器件 | |
US9147757B2 (en) | Power semiconductor device and method for manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190510 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191023 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191202 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200407 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200528 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201104 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201202 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6804379 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |