JP6181597B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 93
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000013078 crystal Substances 0.000 claims description 57
- 230000007547 defect Effects 0.000 claims description 57
- 239000012535 impurity Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 42
- 210000000746 body region Anatomy 0.000 claims description 25
- 238000009826 distribution Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 description 9
- 239000001307 helium Substances 0.000 description 9
- -1 helium ions Chemical class 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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Description
(特徴1)結晶欠陥の濃度のピーク値が、バッファ領域内に形成されている。バッファ領域はカソード領域よりも、結晶欠陥によって電気抵抗が上昇し易いので、このような態様によれば、より好適にスナップバックを抑制することができる。
(特徴2)結晶欠陥の濃度のピーク値が、極大値の半分のn型不純物濃度よりも高いn型不純物濃度を有する領域に形成されている。
(特徴3) 半導体基板に荷電粒子を注入することによって結晶欠陥領域を形成する。
本明細書または図面に説明した技術要素は、単独であるいは各種の組み合わせによって技術的有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
12:半導体基板
14:上部電極
16:下部電極
20:IGBT領域
22:エミッタ領域
24:ボディ領域
26:IGBTドリフト領域
28:IGBTバッファ領域
30:コレクタ領域
32:ゲート絶縁膜
34:ゲート電極
36:絶縁膜
40:ダイオード領域
42:アノード領域
44:ダイオードドリフト領域
46:ダイオードバッファ領域
48:カソード領域
50:結晶欠陥領域
52:絶縁膜
54:制御電極
56:絶縁膜
Claims (4)
- IGBT領域とダイオード領域を有する半導体基板を有し、
IGBT領域内の半導体基板の表面に、エミッタ電極が形成されており、
ダイオード領域内の半導体基板の表面に、アノード電極が形成されており、
半導体基板の裏面に、裏面電極が形成されており、
IGBT領域内に、
前記エミッタ電極に接するn型のエミッタ領域と、
前記エミッタ電極に接するp型のボディ領域と、
前記ボディ領域によって前記エミッタ領域から分離されているn型のIGBTドリフト領域と、
前記IGBTドリフト領域によって前記ボディ領域から分離されており、前記裏面電極に接するp型のコレクタ領域と、
前記ボディ領域に接するゲート絶縁膜と、
前記ゲート絶縁膜を介して前記ボディ領域に対向するゲート電極、
が形成されており、
ダイオード領域内に、
前記アノード電極に接するp型のアノード領域と、
前記アノード領域に対して前記裏面側で隣接しており、前記IGBTドリフト領域と繋がっているn型のダイオードドリフト領域と、
前記ダイオードドリフト領域に対して前記裏面側で隣接しているn型のバッファ領域と、
前記バッファ領域に対して前記裏面側で隣接しており、前記裏面電極に接するn型のカソード領域、
が形成されており、
前記表面から前記裏面に向かう方向におけるn型不純物濃度分布を見たときに、前記カソード領域と前記バッファ領域の境界においてn型不純物濃度の極小値が形成されており、前記バッファ領域内にn型不純物濃度の極大値が形成されており、
前記カソード領域内のn型不純物濃度のピーク値及び前記極大値が、前記ダイオードドリフト領域のn型不純物濃度よりも高く、
前記バッファ領域と前記カソード領域の少なくとも一方に、周囲よりも高濃度に結晶欠陥が分布している結晶欠陥領域が形成されており、
前記表面から前記裏面に向かう方向における前記結晶欠陥の濃度分布を見たときの前記結晶欠陥の濃度のピーク値が、前記極大値の位置よりも前記表面側に位置する前記極大値の半分のn型不純物濃度を有する位置よりも前記裏面側の領域に形成されている、
半導体装置。 - 前記結晶欠陥の濃度の前記ピーク値が、前記バッファ領域内に形成されている請求項1の半導体装置。
- 前記結晶欠陥の濃度の前記ピーク値が、前記極大値の半分のn型不純物濃度よりも高いn型不純物濃度を有する領域に形成されている請求項2の半導体装置。
- 半導体基板に荷電粒子を注入することによって前記結晶欠陥領域を形成する工程を有する請求項1〜3のいずれか一項に記載の半導体装置を製造する方法。
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JP2014092438A JP6181597B2 (ja) | 2014-04-28 | 2014-04-28 | 半導体装置及び半導体装置の製造方法 |
US15/119,420 US9620499B2 (en) | 2014-04-28 | 2015-02-27 | Semiconductor device and method of manufacturing the semiconductor device |
DE112015002028.4T DE112015002028B4 (de) | 2014-04-28 | 2015-02-27 | Halbleitervorrichtung und Verfahren zur Herstellung der Halbleitervorrichtung |
CN201580023346.6A CN106463529B (zh) | 2014-04-28 | 2015-02-27 | 半导体装置以及半导体装置的制造方法 |
PCT/JP2015/055954 WO2015166703A1 (ja) | 2014-04-28 | 2015-02-27 | 半導体装置及び半導体装置の製造方法 |
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JP (1) | JP6181597B2 (ja) |
CN (1) | CN106463529B (ja) |
DE (1) | DE112015002028B4 (ja) |
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WO2016051970A1 (ja) * | 2014-09-30 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN107251234B (zh) * | 2015-02-09 | 2020-10-09 | 三菱电机株式会社 | 半导体装置 |
US9960269B2 (en) * | 2016-02-02 | 2018-05-01 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
WO2017146148A1 (ja) | 2016-02-23 | 2017-08-31 | 富士電機株式会社 | 半導体装置 |
JP6698487B2 (ja) | 2016-09-26 | 2020-05-27 | 三菱電機株式会社 | 半導体装置 |
JP6547724B2 (ja) * | 2016-11-15 | 2019-07-24 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
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