JPWO2015104949A1 - 炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 124
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 88
- 239000010410 layer Substances 0.000 claims abstract description 206
- 239000011241 protective layer Substances 0.000 claims abstract description 85
- 230000001629 suppression Effects 0.000 claims abstract description 83
- 239000012535 impurity Substances 0.000 claims abstract description 53
- 230000000149 penetrating effect Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 7
- 230000005684 electric field Effects 0.000 description 29
- 230000000052 comparative effect Effects 0.000 description 22
- 238000005468 ion implantation Methods 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 10
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- 238000010586 diagram Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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Abstract
Description
本実施の形態にかかる炭化珪素半導体装置の構成を説明する。図1は、実施の形態1にかかる炭化珪素半導体装置を示す断面図である。なお、以下の段落において、「不純物濃度」とは各領域における不純物のピーク値を示すものとし、各領域の不純物濃度に濃度分布がある場合において各領域の「幅」や「厚さ」とは不純物濃度が当該領域における不純物濃度のピーク値の半分以上となる領域までの幅や厚さとする。
図19は、実施の形態2にかかる炭化珪素半導体装置を示す断面図である。本実施の形態では、実施の形態1と比較して、空乏化抑制層6の構成が相違するため、当該相違点についてのみ、以下説明する。
図20は、実施の形態3にかかる炭化珪素半導体装置を示す断面図である。本実施の形態では、実施の形態1および2と比較して、空乏化抑制層6の構成が相違するため、当該相違点についてのみ、以下説明する。
本実施の形態では、空乏化抑制層6が縦方向に浅くなるに連れて徐々に、又は段階的に低くなる濃度階調(プロファイル)を持って形成されている。本実施の形態にかかる空乏化抑制層6の形成方法としては、実施の形態1と同様に、トレンチ7を形成した後、イオン注入により不純物濃度が浅くなるに連れて低くなるプロファイルを持つように空乏化抑制層6を形成するか、又はエピタキシャル成長時に深さによって不純物濃度を変化させて空乏化抑制層6を形成する。
本実施の形態では、保護層8が横方向に濃度階調を持って形成されている。そして、保護層8のプロファイルは、保護層8の中央部から側面側に向かって濃度が低くなる、すなわち、空乏化抑制層6に近くなるに連れて不純物濃度低くなるようなプロファイルとする。本実施の形態にかかる保護層8の形成方法としては、実施の形態1と同様の側壁マスク15を用いたイオン注入を複数回行うことで可能となる。例えば、側壁マスク15を用いた第一回目のイオン注入を行った後、第一回目よりも幅の大きい側壁マスク15を形成し、第一回目イオン注入に加えてさらにイオン注入を行うことで、中央部の不純物濃度を高くすることが可能となり、本実施の形態にかかる保護層8を形成することができる。
Claims (12)
- 炭化珪素からなる第一導電型のドリフト層と、
前記ドリフト層上に形成された第二導電型のウェル領域と、
前記ウェル領域上に形成された第一導電型のソース領域と、
前記ソース領域の表面から前記ウェル領域を貫通するトレンチの内壁に形成され、前記ドリフト層に少なくとも側面の一部が接して形成されたゲート絶縁膜と、
前記ゲート絶縁膜を介して、前記トレンチ内に形成されたゲート電極と、
前記ドリフト層に形成された第二導電型の保護層と、
前記保護層の側面に接して前記ドリフト層に形成され、第一導電型の不純物濃度が前記ドリフト層よりも高い第一導電型の空乏化抑制層と、
を備えた炭化珪素半導体装置。 - 前記保護層は、前記トレンチ下部における前記ドリフト層に形成された、
ことを特徴とする請求項1記載の炭化珪素半導体装置。 - 前記空乏化抑制層は、前記トレンチ下部における前記ドリフト層に形成された、
ことを特徴とする請求項1または2記載の炭化珪素半導体装置。 - 前記保護層の第二導電型の不純物濃度は5.0x1017cm−3以上であり、かつ、5.0x1018cm−3以下であり、
前記空乏化抑制層の第一導電型の不純物濃度は1.0x1017cm−3以上であり、かつ、5.0x1017cm−3以下である、
ことを特徴とする請求項1ないし3のいずれか1項に記載の炭化珪素半導体装置。 - 前記保護層は前記ドリフト層において複数形成され、
前記空乏化抑制層は複数の前記保護層ごとに前記保護層の側面に形成され、
隣接する前記保護層の側面に形成された前記空乏化抑制層は前記ドリフト層を挟み離間している、
ことを特徴とする請求項1ないし4のいずれか1項に記載の炭化珪素半導体装置。 - 前記空乏化抑制層の底面は、前記保護層の底面よりも浅い、
ことを特徴とする請求項1ないし5のいずれか1項に記載の炭化珪素半導体装置。 - 前記保護層は前記ゲート絶縁膜の底面に接して形成されている、
ことを特徴とする請求項1ないし6のいずれか1項に記載の炭化珪素半導体装置。 - 前記空乏化抑制層は前記ゲート絶縁膜の底面に接して形成され、
前記保護層と前記トレンチの底面とが接している幅は、前記空乏化抑制層と前記トレンチの底面とが接している幅よりも大きい、
ことを特徴とする請求項7に記載の炭化珪素半導体装置。 - 前記空乏化抑制層と前記ゲート絶縁膜の底面との間には、前記ドリフト層が介在する、
ことを特徴とする請求項1ないし8のいずれか1項に記載の炭化珪素半導体装置。 - 前記空乏化抑制層の第一導電型の不純物濃度は、浅くなるに連れて前記空乏化抑制層の底面から表面に向かって低くなる、
ことを特徴とする請求項1ないし9のいずれか1項に記載の炭化珪素半導体装置。 - 前記保護層の第一導電型の不純物濃度は、前記保護層の中央部から側面に向かうに連れて低くなる、
ことを特徴とする請求項1ないし10のいずれか1項に記載の炭化珪素半導体装置。 - 第一導電型の炭化珪素半導体層が形成された半導体基板を用意する工程と、
前記炭化珪素半導体層の上部に第二導電型のウェル領域を形成する工程と、
前記ウェル領域の表面に第一導電型のソース領域を形成する工程と、
前記ソース領域の表面から前記ウェル領域を貫通するトレンチを形成する工程と、
前記トレンチ底面に、第一導電型の不純物を注入する工程と、
前記トレンチ内の側面にマスクを形成する工程と、
前記トレンチ内の側面に前記マスクが形成された状態で、前記トレンチの底面に第二導電型の不純物を注入する工程と、
を備えた炭化珪素半導体装置の製造方法。
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