JP6119593B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6119593B2 JP6119593B2 JP2013260292A JP2013260292A JP6119593B2 JP 6119593 B2 JP6119593 B2 JP 6119593B2 JP 2013260292 A JP2013260292 A JP 2013260292A JP 2013260292 A JP2013260292 A JP 2013260292A JP 6119593 B2 JP6119593 B2 JP 6119593B2
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- 239000004065 semiconductor Substances 0.000 title claims description 111
- 239000013078 crystal Substances 0.000 claims description 63
- 230000007547 defect Effects 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 59
- 210000000746 body region Anatomy 0.000 claims description 32
- 239000012535 impurity Substances 0.000 description 15
- 230000003071 parasitic effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- -1 helium ions Chemical class 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
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- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本明細書または図面に説明した技術要素は、単独であるいは各種の組み合わせによって技術的有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
12:半導体基板
14:上部電極
16:下部電極
20:IGBT領域
22:エミッタ領域
24:ボディ領域
24a:ボディコンタクト領域
24b:低濃度ボディ領域
26:ドリフト領域
28:バッファ領域
30:コレクタ領域
32:ゲート絶縁膜
34:ゲート電極
40:ダイオード領域
42:アノード領域
42a:アノードコンタクト領域
42b:低濃度アノード領域
44:カソード領域
46:絶縁膜
48:制御電極
52:結晶欠陥領域
Claims (4)
- 半導体装置であって、
半導体基板と、
前記半導体基板の上面に形成されている上部電極と、
前記半導体基板の下面に形成されている下部電極、
を有し、
前記半導体基板の上面に露出する範囲に、アノード領域と、上部IGBT構造が形成されており、
前記アノード領域は、前記上部電極に接続されているp型領域であり、
前記上部IGBT構造が、前記上部電極に接続されているn型のエミッタ領域と、前記エミッタ領域と接しており、前記上部電極に接続されているp型のボディ領域を有しており、
前記半導体基板の上面に、前記アノード領域と前記上部IGBT構造の境界に沿って伸びるトレンチが形成されており、前記トレンチ内にゲート絶縁膜とゲート電極が配置されており、
前記半導体基板の下面に露出する範囲に、カソード領域とコレクタ領域が形成されており、
前記カソード領域は、前記下部電極に接続されているn型領域であり、前記アノード領域の下側の領域の少なくとも一部に形成されており、
前記コレクタ領域は、前記下部電極に接続されているp型領域であり、前記上部IGBT構造の下側の領域の少なくとも一部に形成されており、前記カソード領域に接しており、
前記アノード領域と前記上部IGBT構造を有する上面側構造と前記カソード領域と前記コレクタ領域を有する下面側構造の間にn型のドリフト領域が形成されており、
周囲よりも結晶欠陥濃度が高い結晶欠陥領域が、前記コレクタ領域の上側の前記ドリフト領域内の一部に形成されるように、前記カソード領域の上側の前記ドリフト領域内と前記コレクタ領域の上側の前記ドリフト領域内とに跨って伸びており、
前記半導体基板の厚みをxμmとし、前記カソード領域の上側の前記ドリフト領域から前記コレクタ領域の上側の前記ドリフト領域に突出している部分の前記結晶欠陥領域の幅をyμmとした場合に、
y≧0.007x2−1.09x+126
の関係が満たされる、
半導体装置。 - 前記結晶欠陥領域が、前記アノード領域の下側の前記ドリフト領域の横方向全体に形成されている請求項1の半導体装置。
- 前記アノード領域が、前記カソード領域よりも上部IGBT構造側に突出している請求項1または2の半導体装置。
- 前記結晶欠陥領域が、前記カソード領域の上側の前記ドリフト領域内から上部IGBT構造の下側の前記ドリフト領域内に跨って伸びている請求項1〜3の何れか一項の半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013260292A JP6119593B2 (ja) | 2013-12-17 | 2013-12-17 | 半導体装置 |
DE112014005981.1T DE112014005981B4 (de) | 2013-12-17 | 2014-07-17 | Halbleitereinrichtung |
PCT/JP2014/069060 WO2015093086A1 (ja) | 2013-12-17 | 2014-07-17 | 半導体装置 |
US15/029,583 US10141304B2 (en) | 2013-12-17 | 2014-07-17 | Semiconductor device |
KR1020167018331A KR101802104B1 (ko) | 2013-12-17 | 2014-07-17 | 반도체 장치 |
CN201480068878.7A CN105830217B (zh) | 2013-12-17 | 2014-07-17 | 半导体装置 |
TW103143484A TWI542000B (zh) | 2013-12-17 | 2014-12-12 | Semiconductor device |
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---|---|---|---|
JP2013260292A JP6119593B2 (ja) | 2013-12-17 | 2013-12-17 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2015118991A JP2015118991A (ja) | 2015-06-25 |
JP6119593B2 true JP6119593B2 (ja) | 2017-04-26 |
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JP2013260292A Expired - Fee Related JP6119593B2 (ja) | 2013-12-17 | 2013-12-17 | 半導体装置 |
Country Status (7)
Country | Link |
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US (1) | US10141304B2 (ja) |
JP (1) | JP6119593B2 (ja) |
KR (1) | KR101802104B1 (ja) |
CN (1) | CN105830217B (ja) |
DE (1) | DE112014005981B4 (ja) |
TW (1) | TWI542000B (ja) |
WO (1) | WO2015093086A1 (ja) |
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JP6277814B2 (ja) * | 2014-03-25 | 2018-02-14 | 株式会社デンソー | 半導体装置 |
WO2016030966A1 (ja) | 2014-08-26 | 2016-03-03 | 三菱電機株式会社 | 半導体素子 |
JP6164372B2 (ja) * | 2014-09-17 | 2017-07-19 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6197773B2 (ja) | 2014-09-29 | 2017-09-20 | トヨタ自動車株式会社 | 半導体装置 |
WO2016051970A1 (ja) * | 2014-09-30 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6261494B2 (ja) * | 2014-12-03 | 2018-01-17 | 三菱電機株式会社 | 電力用半導体装置 |
JP6334465B2 (ja) * | 2015-06-17 | 2018-05-30 | 富士電機株式会社 | 半導体装置 |
US9722059B2 (en) * | 2015-08-21 | 2017-08-01 | Infineon Technologies Ag | Latch-up free power transistor |
JP6443267B2 (ja) * | 2015-08-28 | 2018-12-26 | 株式会社デンソー | 半導体装置 |
CN107408576B (zh) | 2015-09-16 | 2020-11-13 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
JP6531589B2 (ja) * | 2015-09-17 | 2019-06-19 | 株式会社デンソー | 半導体装置 |
JP6281548B2 (ja) | 2015-09-17 | 2018-02-21 | トヨタ自動車株式会社 | 半導体装置 |
WO2018056233A1 (ja) * | 2016-09-20 | 2018-03-29 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US10867798B2 (en) | 2016-12-08 | 2020-12-15 | Fuji Electric Co., Ltd. | Method of manufacturing semiconductor device |
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JP6780709B2 (ja) | 2016-12-16 | 2020-11-04 | 富士電機株式会社 | 半導体装置および製造方法 |
EP3480855B1 (en) | 2017-02-15 | 2023-09-20 | Fuji Electric Co., Ltd. | Semiconductor device |
JP6784921B2 (ja) * | 2017-02-17 | 2020-11-18 | 株式会社デンソー | スイッチング素子とその製造方法 |
JP7325167B2 (ja) | 2017-03-16 | 2023-08-14 | 富士電機株式会社 | 半導体装置の製造方法 |
JP6666292B2 (ja) * | 2017-03-22 | 2020-03-13 | トヨタ自動車株式会社 | 半導体装置 |
CN110140199B (zh) * | 2017-07-14 | 2022-07-05 | 富士电机株式会社 | 半导体装置 |
JP6958093B2 (ja) * | 2017-08-09 | 2021-11-02 | 富士電機株式会社 | 半導体装置 |
DE102017118864A1 (de) * | 2017-08-18 | 2019-02-21 | Infineon Technologies Austria Ag | Leistungsdiode |
DE112018001627T5 (de) * | 2017-11-15 | 2020-01-16 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
CN110785852B (zh) * | 2017-12-06 | 2023-10-24 | 富士电机株式会社 | 半导体装置 |
JP6992476B2 (ja) * | 2017-12-14 | 2022-01-13 | 富士電機株式会社 | 半導体装置 |
US11393812B2 (en) * | 2017-12-28 | 2022-07-19 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
JP7003688B2 (ja) * | 2018-01-25 | 2022-01-20 | 株式会社デンソー | 半導体装置及びその製造方法 |
CN111656497B (zh) * | 2018-08-14 | 2023-08-08 | 富士电机株式会社 | 半导体装置及制造方法 |
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US10141304B2 (en) | 2018-11-27 |
TWI542000B (zh) | 2016-07-11 |
US20160329323A1 (en) | 2016-11-10 |
KR20160096673A (ko) | 2016-08-16 |
DE112014005981B4 (de) | 2018-11-08 |
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JP2015118991A (ja) | 2015-06-25 |
WO2015093086A1 (ja) | 2015-06-25 |
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