JP6958093B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6958093B2 JP6958093B2 JP2017154181A JP2017154181A JP6958093B2 JP 6958093 B2 JP6958093 B2 JP 6958093B2 JP 2017154181 A JP2017154181 A JP 2017154181A JP 2017154181 A JP2017154181 A JP 2017154181A JP 6958093 B2 JP6958093 B2 JP 6958093B2
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- 239000010937 tungsten Substances 0.000 description 1
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- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
Description
特許文献1 特開2016−225345号公報
Claims (25)
- 第1導電型のドリフト領域を有する半導体基板と、
前記半導体基板の上面から前記ドリフト領域まで設けられ、前記半導体基板の上面において予め定められた延伸方向に延伸した第1ゲートトレンチ部と、
前記半導体基板の上面から前記ドリフト領域まで設けられ、前記延伸方向に延伸したダミートレンチ部と、
前記第1ゲートトレンチ部および前記ダミートレンチ部に挟まれた第1トランジスタメサ部と、
前記ドリフト領域の上方で前記第1ゲートトレンチ部に接した第2導電型のベース領域と、
前記半導体基板の上面に前記第1ゲートトレンチ部と接して設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記半導体基板の上面に露出した第2導電型領域と、
を備え、
前記第1トランジスタメサ部の上面において、
前記エミッタ領域および前記第2導電型領域は、前記延伸方向に交互に配置され、
前記エミッタ領域の前記第1ゲートトレンチ部に接する前記延伸方向の幅が、前記第2導電型領域の前記第1ゲートトレンチ部に接する前記延伸方向の幅よりも大きく、
前記第1トランジスタメサ部の上面において、前記エミッタ領域の前記第1ゲートトレンチ部に接する前記延伸方向の幅が、前記エミッタ領域の前記ダミートレンチ部に接する前記延伸方向の幅よりも大きい、
半導体装置。 - 第1導電型のドリフト領域を有する半導体基板と、
前記半導体基板の上面から前記ドリフト領域まで設けられ、前記半導体基板の上面において予め定められた延伸方向に延伸した第1ゲートトレンチ部と、
前記半導体基板の上面から前記ドリフト領域まで設けられ、前記延伸方向に延伸したダミートレンチ部と、
前記第1ゲートトレンチ部および前記ダミートレンチ部に挟まれた第1トランジスタメサ部と、
前記ドリフト領域の上方で前記第1ゲートトレンチ部に接した第2導電型のベース領域と、
前記半導体基板の上面に前記第1ゲートトレンチ部と接して設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記半導体基板の上面に露出した第2導電型領域と、
を備え、
前記第1トランジスタメサ部の上面において、
前記エミッタ領域および前記第2導電型領域は、前記延伸方向に交互に配置され、
前記エミッタ領域の前記第1ゲートトレンチ部に接する前記延伸方向の幅が、前記第2導電型領域の前記第1ゲートトレンチ部に接する前記延伸方向の幅よりも大きく、
前記第1トランジスタメサ部の上面において、
前記第2導電型領域は前記ダミートレンチ部と接し、
前記第2導電型領域の前記ダミートレンチ部に接する前記延伸方向の幅が、前記第2導電型領域の前記第1ゲートトレンチ部に接する前記延伸方向の幅よりも大きい、
半導体装置。 - 前記第1トランジスタメサ部の上面において、
前記第2導電型領域は前記ダミートレンチ部と接し、
前記第2導電型領域の前記ダミートレンチ部に接する前記延伸方向の幅が、前記第2導電型領域の前記第1ゲートトレンチ部に接する前記延伸方向の幅よりも大きい、請求項1に記載の半導体装置。 - 前記エミッタ領域が前記ダミートレンチ部と接する、請求項1から3のいずれか一項に記載の半導体装置。
- 前記第2導電型領域の前記第1ゲートトレンチ部と接する前記延伸方向の幅が、前記エミッタ領域の前記ダミートレンチ部と接する前記延伸方向の幅よりも小さい、請求項4に記載の半導体装置。
- 前記エミッタ領域が前記ダミートレンチ部と離間している、請求項1から3のいずれか一項に記載の半導体装置。
- 前記第2導電型領域は、第2導電型のコンタクト領域および前記コンタクト領域よりもドーピング濃度の低い第2導電型の第1中間領域をさらに有し、
前記第1中間領域は、前記ダミートレンチ部および前記エミッタ領域に挟まれ、前記ダミートレンチ部および前記エミッタ領域の双方に接する
請求項6に記載の半導体装置。 - 第1導電型のドリフト領域を有する半導体基板と、
前記半導体基板の上面から前記ドリフト領域まで設けられ、前記半導体基板の上面において予め定められた延伸方向に延伸した第1ゲートトレンチ部と、
前記半導体基板の上面から前記ドリフト領域まで設けられ、前記延伸方向に延伸したダミートレンチ部と、
前記第1ゲートトレンチ部および前記ダミートレンチ部に挟まれた第1トランジスタメサ部と、
前記ドリフト領域の上方で前記第1ゲートトレンチ部に接した第2導電型のベース領域と、
前記半導体基板の上面に前記第1ゲートトレンチ部と接して設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記半導体基板の上面に露出した第2導電型領域と、
を備え、
前記第1トランジスタメサ部の上面において、
前記エミッタ領域および前記第2導電型領域は、前記延伸方向に交互に配置され、
前記エミッタ領域の前記第1ゲートトレンチ部に接する前記延伸方向の幅が、前記第2導電型領域の前記第1ゲートトレンチ部に接する前記延伸方向の幅よりも大きく、
前記エミッタ領域が前記ダミートレンチ部と離間し、
前記第2導電型領域は、第2導電型のコンタクト領域および前記コンタクト領域よりもドーピング濃度の低い第2導電型の第1中間領域をさらに有し、
前記第1中間領域は、前記ダミートレンチ部および前記エミッタ領域に挟まれ、前記ダミートレンチ部および前記エミッタ領域の双方に接する
半導体装置。 - 前記第2導電型領域は、前記コンタクト領域よりもドーピング濃度の低い第2導電型の第2中間領域を有し、
前記コンタクト領域は前記第1ゲートトレンチ部と離間し、前記第2中間領域は前記第1ゲートトレンチ部と接する、
請求項7または8に記載の半導体装置。 - 前記第2中間領域が、前記第1ゲートトレンチ部および前記コンタクト領域に挟まれ、前記第1ゲートトレンチ部および前記コンタクト領域の双方に接する、請求項9に記載の半導体装置。
- 前記第2中間領域の前記第1ゲートトレンチ部に接する前記延伸方向の幅が、前記第1中間領域の前記ダミートレンチ部と接する前記延伸方向の幅よりも小さい、請求項10に記載の半導体装置。
- 前記第1トランジスタメサ部の上面において、
前記エミッタ領域および前記第2導電型領域は、前記延伸方向に交互に配置される、
請求項4に記載の半導体装置。 - 前記エミッタ領域の前記延伸方向の幅がステップ状に変化する、請求項1から12のいずれか一項に記載の半導体装置。
- 前記半導体基板の上面に層間絶縁膜をさらに備え、前記層間絶縁膜はコンタクトホールを有し、
前記コンタクトホールの下方において、前記エミッタ領域と前記第2導電型領域が、前記ダミートレンチ部から前記第1ゲートトレンチ部の方向に隣り合って接する、請求項1から13のいずれか一項に記載の半導体装置。 - 前記エミッタ領域の端部が、前記コンタクトホールの下方に配置される、請求項14に記載の半導体装置。
- 前記半導体基板の上面に層間絶縁膜をさらに備え、前記層間絶縁膜はコンタクトホールを有し、
前記コンタクトホールの下方において、前記エミッタ領域と前記第2導電型領域が、前
記延伸方向に隣り合って接する、請求項1から13のいずれか一項に記載の半導体装置。 - 前記エミッタ領域の端部が、前記半導体基板の上面視で、前記コンタクトホールと前記第1ゲートトレンチ部との間に配置される、請求項16に記載の半導体装置。
- 前記エミッタ領域の端部が、前記半導体基板の上面視で、前記コンタクトホールと前記ダミートレンチ部との間に配置される、請求項16に記載の半導体装置。
- 前記エミッタ領域の前記延伸方向の幅が連続的に変化する、請求項1から12のいずれか一項に記載の半導体装置。
- 前記コンタクトホールと前記第1ゲートトレンチ部との間における、前記エミッタ領域の前記延伸方向の幅と、前記コンタクトホールと前記ダミートレンチ部との間における、前記エミッタ領域の前記延伸方向の幅とが等しい、
請求項14から18のいずれか一項に記載の半導体装置。 - 前記ドリフト領域の上方且つ前記ベース領域の下方に、前記第1ゲートトレンチ部に接し、前記ドリフト領域よりもドーピング濃度の高い第1導電型の蓄積領域をさらに備え、
前記蓄積領域は、前記半導体基板の上面視で、前記エミッタ領域と重なる、
請求項1から20のいずれか一項に記載の半導体装置。 - 前記半導体基板の上面から前記ドリフト領域まで設けられ、前記延伸方向に延伸し、前記第1ゲートトレンチ部と隣り合って前記ダミートレンチ部と反対側に配置された第2ゲートトレンチ部と、
前記第1ゲートトレンチ部および前記第2ゲートトレンチ部に挟まれた第2トランジスタメサ部と、
をさらに備え
前記ベース領域は、前記ドリフト領域の上方で、前記第1ゲートトレンチ部および前記第2ゲートトレンチ部の双方と接し、
前記エミッタ領域は、前記半導体基板の上面で、前記第1ゲートトレンチ部および前記第2ゲートトレンチ部の双方と接し、
前記第2導電型領域は、前記半導体基板の上面に露出し、
前記第2トランジスタメサ部において、前記エミッタ領域の前記第2ゲートトレンチ部に接する前記延伸方向の幅が、前記第1トランジスタメサ部において、前記エミッタ領域の前記第2ゲートトレンチ部に接する前記延伸方向の幅よりも小さい、請求項1から21のいずれか一項に記載の半導体装置。 - 前記第2トランジスタメサ部において、前記エミッタ領域と前記第2導電型領域が、前記延伸方向に交互に配置される、請求項22に記載の半導体装置。
- 前記第2トランジスタメサ部において、前記第2導電型領域が、前記第1ゲートトレンチ部および前記第2ゲートトレンチ部の双方と離間している、請求項22または23に記載の半導体装置。
- 前記第2導電型領域は前記第1ゲートトレンチ部に接し、
前記第2トランジスタメサ部において、前記第2導電型領域の前記第1ゲートトレンチ部に接する前記延伸方向の幅が、前記第1トランジスタメサ部において、前記エミッタ領域の前記第1ゲートトレンチ部に接する前記延伸方向の幅よりも大きい、請求項22または23に記載の半導体装置。
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