JP7077648B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7077648B2 JP7077648B2 JP2018024572A JP2018024572A JP7077648B2 JP 7077648 B2 JP7077648 B2 JP 7077648B2 JP 2018024572 A JP2018024572 A JP 2018024572A JP 2018024572 A JP2018024572 A JP 2018024572A JP 7077648 B2 JP7077648 B2 JP 7077648B2
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Description
特許文献1 特開2013-179342号公報
延長領域におけるドーピング濃度が、5×1016/cm3以上、3.0×1017/cm3以下であってよい。
Claims (12)
- 主電流を流す活性部および電界を緩和するエッジ部が形成された半導体基板を備える半導体装置であって、
前記半導体基板の上方に設けられた上部電極と、
前記半導体基板と前記上部電極との間に設けられ、コンタクトホールが形成された絶縁膜と、
前記半導体基板の内部に形成された第1導電型のドリフト領域と、
前記活性部において前記半導体基板の上面側に形成され、前記コンタクトホールを介して前記上部電極に接続された第2導電型のベース領域と、
前記エッジ部において前記半導体基板の上面側に形成され、前記上部電極と分離されている第2導電型のウェル領域と、
前記半導体基板の上面側において前記ベース領域から前記ウェル領域の方向に延伸して形成され、前記絶縁膜により前記上部電極と分離されている第2導電型の延長領域と
を備え、
前記半導体基板の上面と平行な面において、前記コンタクトホールの前記ウェル領域側の端部から前記延長領域の前記ウェル領域側の端部までの第1距離と、前記延長領域の前記ウェル領域側の端部から前記ウェル領域までの第2距離との和が、前記活性部における前記半導体基板の厚みより小さく、
前記延長領域の上方には、前記絶縁膜を介して前記上部電極が設けられ、前記上部電極が前記絶縁膜上において前記コンタクトホールの前記ウェル領域側の端部から前記ウェル領域の方向に延伸する第3距離は、前記第1距離より短い、半導体装置。 - 前記第3距離が、前記第1距離および前記第2距離の和から前記第3距離を引いた値よりも小さい
請求項1に記載の半導体装置。 - 前記第1距離および前記第2距離の和が50μmより大きい
請求項1または2に記載の半導体装置。 - 前記第1距離および前記第2距離の和が100μmより小さい
請求項1から3のいずれか一項に記載の半導体装置。 - 前記延長領域におけるドーピング濃度が、5×1016/cm3以上、3.0×1017/cm3以下である
請求項1から5のいずれか一項に記載の半導体装置。 - 前記延長領域の深さが、前記ウェル領域の深さと同一である
請求項1から6のいずれか一項に記載の半導体装置。 - 前記延長領域のドーピング濃度が、前記ウェル領域のドーピング濃度と同一である
請求項1から7のいずれか一項に記載の半導体装置。 - 前記半導体基板の内部において前記ドリフト領域と前記半導体基板の下面との間に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型のカソード領域を更に備え、
前記カソード領域の前記エッジ部側の端部が、前記ウェル領域よりも前記活性部側に配置されている
請求項1から8のいずれか一項に記載の半導体装置。 - 前記カソード領域の前記エッジ部側の端部が、前記延長領域の前記ウェル領域側の端部よりも前記活性部側に配置されている
請求項9に記載の半導体装置。 - 前記カソード領域の前記エッジ部側の端部が、前記コンタクトホールの前記ウェル領域側の端部よりも前記活性部側に配置されている
請求項9に記載の半導体装置。 - 前記半導体基板のコーナー部において、
前記コンタクトホールの上面視における端部の曲率半径が、前記延長領域の上面視における端部の曲率半径よりも大きい
請求項1から10のいずれか一項に記載の半導体装置。
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