JP6606007B2 - スイッチング素子 - Google Patents
スイッチング素子 Download PDFInfo
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- JP6606007B2 JP6606007B2 JP2016082975A JP2016082975A JP6606007B2 JP 6606007 B2 JP6606007 B2 JP 6606007B2 JP 2016082975 A JP2016082975 A JP 2016082975A JP 2016082975 A JP2016082975 A JP 2016082975A JP 6606007 B2 JP6606007 B2 JP 6606007B2
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- 239000012535 impurity Substances 0.000 claims description 82
- 210000000746 body region Anatomy 0.000 claims description 58
- 239000004065 semiconductor Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 42
- 239000010410 layer Substances 0.000 description 100
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000007423 decrease Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000000779 depleting effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
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Description
本明細書または図面に説明した技術要素は、単独あるいは各種の組み合わせによって技術有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの1つの目的を達成すること自体で技術有用性を持つものである。
12 :半導体基板
22 :トレンチ
24 :ゲート絶縁層
24a :底部絶縁層
24b :側面絶縁膜
26 :ゲート電極
28 :層間絶縁膜
30 :ソース領域
32 :ボディ領域
34 :ドリフト領域
35 :ドレイン領域
36 :底部領域
38 :接続領域
70 :上部電極
72 :下部電極
Claims (1)
- スイッチング素子であって、
半導体基板と、
前記半導体基板の上面に設けられたトレンチと、
前記トレンチの底部に配置されており、前記トレンチの底面と前記底面近傍の前記トレンチの側面を覆っている底部絶縁層と、
前記底部絶縁層の上部で前記トレンチの前記側面を覆っており、前記底部絶縁層の上面と下面の間の幅よりも小さい厚みを備える側面絶縁膜と、
前記トレンチ内に配置されており、前記底部絶縁層と前記側面絶縁膜によって前記半導体基板から絶縁されているゲート電極、
を有しており、
前記半導体基板が、
前記側面絶縁膜に接している第1導電型の第1領域と、
前記第1領域の下側で前記側面絶縁膜に接している第2導電型のボディ領域と、
前記ボディ領域の下側で前記側面絶縁膜と前記底部絶縁層に接しており、前記ボディ領域によって前記第1領域から分離されている第1導電型の第2領域と、
前記トレンチの前記底面において前記底部絶縁層に接している第2導電型の底部領域と、
前記トレンチの前記側面に沿って伸びており、前記底部絶縁層と前記側面絶縁膜に接しており、前記ボディ領域と前記底部領域とを接続している第2導電型の接続領域、
を有しており、
前記接続領域が、前記トレンチの前記側面のうちの前記トレンチの短手方向の端部に位置する側面の一部において前記底部絶縁層と前記側面絶縁膜に接しており、
前記接続領域に接している範囲の前記側面絶縁膜が、前記第2領域に接している範囲の前記側面絶縁膜よりも厚く、
前記底部絶縁層と前記接続領域が接している深さ範囲内の前記接続領域に、前記側面絶縁膜と前記接続領域が接している深さ範囲内の前記接続領域における第2導電型不純物濃度の最低値よりも低い第2導電型不純物濃度を有する深さ範囲が存在する、
スイッチング素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016082975A JP6606007B2 (ja) | 2016-04-18 | 2016-04-18 | スイッチング素子 |
US16/093,882 US20190109187A1 (en) | 2016-04-18 | 2017-04-18 | Semiconductor switching element |
PCT/IB2017/000425 WO2017182864A1 (en) | 2016-04-18 | 2017-04-18 | Semiconductor switching element |
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JP2016082975A JP6606007B2 (ja) | 2016-04-18 | 2016-04-18 | スイッチング素子 |
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JP2017195224A JP2017195224A (ja) | 2017-10-26 |
JP6606007B2 true JP6606007B2 (ja) | 2019-11-13 |
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US (1) | US20190109187A1 (ja) |
JP (1) | JP6606007B2 (ja) |
WO (1) | WO2017182864A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2019087611A (ja) * | 2017-11-06 | 2019-06-06 | トヨタ自動車株式会社 | スイッチング素子とその製造方法 |
JP2019087612A (ja) * | 2017-11-06 | 2019-06-06 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP2019125625A (ja) * | 2018-01-12 | 2019-07-25 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2019129290A (ja) * | 2018-01-26 | 2019-08-01 | トヨタ自動車株式会社 | 半導体素子 |
JP7107718B2 (ja) * | 2018-03-28 | 2022-07-27 | 株式会社デンソー | スイッチング素子の製造方法 |
IT201900013416A1 (it) * | 2019-07-31 | 2021-01-31 | St Microelectronics Srl | Dispositivo di potenza a bilanciamento di carica e procedimento di fabbricazione del dispositivo di potenza a bilanciamento di carica |
JP2024029584A (ja) * | 2022-08-22 | 2024-03-06 | 株式会社東芝 | 半導体装置及びその製造方法 |
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US6342709B1 (en) * | 1997-12-10 | 2002-01-29 | The Kansai Electric Power Co., Inc. | Insulated gate semiconductor device |
JP4453671B2 (ja) | 2006-03-08 | 2010-04-21 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
JP5206107B2 (ja) * | 2007-09-06 | 2013-06-12 | トヨタ自動車株式会社 | 半導体装置 |
JP2011134910A (ja) * | 2009-12-24 | 2011-07-07 | Rohm Co Ltd | SiC電界効果トランジスタ |
JP5920970B2 (ja) * | 2011-11-30 | 2016-05-24 | ローム株式会社 | 半導体装置 |
JP5751213B2 (ja) * | 2012-06-14 | 2015-07-22 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
CN103959475B (zh) * | 2012-11-21 | 2016-09-07 | 丰田自动车株式会社 | 半导体装置 |
DE102014107325B4 (de) * | 2014-05-23 | 2023-08-10 | Infineon Technologies Ag | Halbleiterbauelement und verfahren zum herstellen eines halbleiterbauelements |
-
2016
- 2016-04-18 JP JP2016082975A patent/JP6606007B2/ja active Active
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2017
- 2017-04-18 US US16/093,882 patent/US20190109187A1/en not_active Abandoned
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