JP6142813B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6142813B2 JP6142813B2 JP2014023867A JP2014023867A JP6142813B2 JP 6142813 B2 JP6142813 B2 JP 6142813B2 JP 2014023867 A JP2014023867 A JP 2014023867A JP 2014023867 A JP2014023867 A JP 2014023867A JP 6142813 B2 JP6142813 B2 JP 6142813B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- diode
- igbt
- sense
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 105
- 239000000758 substrate Substances 0.000 claims description 69
- 210000000746 body region Anatomy 0.000 claims description 60
- 239000012535 impurity Substances 0.000 claims description 16
- 239000000969 carrier Substances 0.000 description 9
- 238000000926 separation method Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本明細書または図面に説明した技術要素は、単独であるいは各種の組み合わせによって技術的有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
12:半導体基板
14:表面電極
15:表面電極
16:裏面電極
20:メインIGBT領域
22:エミッタ領域
24:ボディ領域
26:ドリフト領域
30:カソード領域
32:ゲート絶縁膜
34:ゲート電極
36:絶縁膜
40:メインダイオード領域
42:アノード領域
44:コレクタ領域
60:センスIGBT領域
62:エミッタ領域
64:ボディ領域
66:ドリフト領域
66a:IGBTドリフト領域
66b:ダイオードドリフト領域
68:コレクタ領域
72:ゲート絶縁膜
74:ゲート電極
76:絶縁膜
78:境界
80:センスダイオード領域
82:アノード領域
84:カソード領域
90:分離領域
92:外部p型領域
100:高濃度n型領域
102:高濃度n型領域
110:絶縁層
112:絶縁層
Claims (1)
- IGBTが形成されているメインIGBT領域と、ダイオードが形成されているメインダイオード領域と、IGBTが形成されているセンスIGBT領域と、ダイオードが形成されているセンスダイオード領域を有する半導体基板を有する半導体装置であって、
前記センスIGBT領域の面積は、前記メインIGBT領域よりも小さく、
前記センスダイオード領域の面積は、前記メインダイオード領域よりも小さく、
前記センスIGBT領域内に、
前記半導体基板の表面に露出するn型のエミッタ領域と、
前記エミッタ領域に接するp型のボディ領域と、
前記ボディ領域によって前記エミッタ領域から分離されているn型のIGBTドリフト領域と、
前記半導体基板の裏面に露出しており、前記IGBTドリフト領域によって前記ボディ領域から分離されているp型のコレクタ領域と、
前記ボディ領域に接するゲート絶縁膜と、
前記ゲート絶縁膜を介して前記ボディ領域に対向するゲート電極、
が形成されており、
前記センスダイオード領域内に、
前記半導体基板の前記表面に露出するp型のアノード領域と、
前記アノード領域に接するn型のダイオードドリフト領域と、
前記ダイオードドリフト領域によって前記アノード領域から分離されており、前記半導体基板の前記裏面に露出しており、前記ダイオードドリフト領域よりもn型不純物濃度が高いn型のカソード領域、
が形成されており、
前記IGBTドリフト領域及び前記ダイオードドリフト領域によって前記ボディ領域が前記アノード領域から分離されており、
前記IGBTドリフト領域と前記ダイオードドリフト領域の間に、前記IGBTドリフト領域及び前記ダイオードドリフト領域よりもn型不純物濃度が高い高濃度n型領域が形成されており、
前記高濃度n型領域が、半導体基板の上面から、前記IGBTドリフト領域及び前記ダイオードドリフト領域の厚み方向の中央部よりも深い位置まで伸びている、
半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014023867A JP6142813B2 (ja) | 2014-02-10 | 2014-02-10 | 半導体装置 |
CN201480075282.XA CN106030797B (zh) | 2014-02-10 | 2014-09-08 | 半导体装置 |
PCT/JP2014/073676 WO2015118714A1 (ja) | 2014-02-10 | 2014-09-08 | 半導体装置 |
US15/104,073 US9972707B2 (en) | 2014-02-10 | 2014-09-08 | Semiconductor device |
EP14882078.0A EP3107123B1 (en) | 2014-02-10 | 2014-09-08 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014023867A JP6142813B2 (ja) | 2014-02-10 | 2014-02-10 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015153785A JP2015153785A (ja) | 2015-08-24 |
JP2015153785A5 JP2015153785A5 (ja) | 2016-04-07 |
JP6142813B2 true JP6142813B2 (ja) | 2017-06-07 |
Family
ID=53777534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014023867A Expired - Fee Related JP6142813B2 (ja) | 2014-02-10 | 2014-02-10 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9972707B2 (ja) |
EP (1) | EP3107123B1 (ja) |
JP (1) | JP6142813B2 (ja) |
CN (1) | CN106030797B (ja) |
WO (1) | WO2015118714A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6795032B2 (ja) * | 2016-06-03 | 2020-12-02 | 富士電機株式会社 | 半導体装置 |
JP2018129358A (ja) | 2017-02-07 | 2018-08-16 | ルネサスエレクトロニクス株式会社 | 電流検出装置、負荷駆動システム、及び、電流検出装置の製造方法 |
JP6804379B2 (ja) | 2017-04-24 | 2020-12-23 | 三菱電機株式会社 | 半導体装置 |
JP7151084B2 (ja) * | 2018-01-11 | 2022-10-12 | 株式会社デンソー | 半導体装置 |
CN113632237B (zh) * | 2019-03-22 | 2022-09-13 | 日立能源瑞士股份公司 | 具有低传导损耗的反向传导绝缘栅功率半导体器件 |
JP7363079B2 (ja) * | 2019-04-15 | 2023-10-18 | 富士電機株式会社 | 半導体装置 |
JP7224247B2 (ja) * | 2019-07-02 | 2023-02-17 | 三菱電機株式会社 | 半導体装置 |
JP7332543B2 (ja) * | 2020-07-07 | 2023-08-23 | 三菱電機株式会社 | 半導体装置 |
WO2022230014A1 (ja) * | 2021-04-26 | 2022-11-03 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5241210A (en) * | 1987-02-26 | 1993-08-31 | Kabushiki Kaisha Toshiba | High breakdown voltage semiconductor device |
JPH10261704A (ja) * | 1997-03-18 | 1998-09-29 | Toyota Motor Corp | 半導体装置及びその製造方法 |
JP4761644B2 (ja) | 2001-04-18 | 2011-08-31 | 三菱電機株式会社 | 半導体装置 |
JP3739376B2 (ja) * | 2003-12-08 | 2006-01-25 | 株式会社ルネサステクノロジ | 半導体装置 |
EP2003694B1 (en) * | 2007-06-14 | 2011-11-23 | Denso Corporation | Semiconductor device |
DE102008045410B4 (de) | 2007-09-05 | 2019-07-11 | Denso Corporation | Halbleitervorrichtung mit IGBT mit eingebauter Diode und Halbleitervorrichtung mit DMOS mit eingebauter Diode |
JP4506808B2 (ja) * | 2007-10-15 | 2010-07-21 | 株式会社デンソー | 半導体装置 |
JP4877337B2 (ja) | 2009-02-17 | 2012-02-15 | トヨタ自動車株式会社 | 半導体装置 |
JP2011082220A (ja) * | 2009-10-02 | 2011-04-21 | Toyota Motor Corp | 半導体装置 |
JP5499692B2 (ja) | 2009-12-24 | 2014-05-21 | トヨタ自動車株式会社 | 半導体装置及びその製造方法 |
US8471291B2 (en) * | 2010-05-07 | 2013-06-25 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
DE102011076610A1 (de) | 2010-06-04 | 2011-12-08 | Denso Corporation | Stromsensor, inverterschaltung und diese aufweisende halbleitervorrichtung |
JP5668499B2 (ja) | 2011-01-27 | 2015-02-12 | 株式会社デンソー | 半導体装置 |
JP2013201237A (ja) | 2012-03-23 | 2013-10-03 | Toshiba Corp | 半導体装置 |
-
2014
- 2014-02-10 JP JP2014023867A patent/JP6142813B2/ja not_active Expired - Fee Related
- 2014-09-08 CN CN201480075282.XA patent/CN106030797B/zh not_active Expired - Fee Related
- 2014-09-08 US US15/104,073 patent/US9972707B2/en active Active
- 2014-09-08 EP EP14882078.0A patent/EP3107123B1/en not_active Not-in-force
- 2014-09-08 WO PCT/JP2014/073676 patent/WO2015118714A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP2015153785A (ja) | 2015-08-24 |
EP3107123A1 (en) | 2016-12-21 |
EP3107123B1 (en) | 2018-11-28 |
EP3107123A4 (en) | 2017-02-22 |
US20160372584A1 (en) | 2016-12-22 |
US9972707B2 (en) | 2018-05-15 |
WO2015118714A1 (ja) | 2015-08-13 |
CN106030797B (zh) | 2019-03-12 |
CN106030797A (zh) | 2016-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6142813B2 (ja) | 半導体装置 | |
JP6197773B2 (ja) | 半導体装置 | |
JP6281548B2 (ja) | 半導体装置 | |
JP6135636B2 (ja) | 半導体装置 | |
JP6022774B2 (ja) | 半導体装置 | |
JP5967065B2 (ja) | 半導体装置 | |
CN106463542B (zh) | 半导体装置 | |
JPWO2014097454A1 (ja) | 半導体装置 | |
JP2015138789A (ja) | 半導体装置 | |
WO2014125584A1 (ja) | 半導体装置 | |
JP2018060984A (ja) | 半導体装置 | |
JP2019054070A5 (ja) | ||
JP5989689B2 (ja) | 半導体装置 | |
JP2017174863A (ja) | 半導体装置 | |
JP2014103352A (ja) | 半導体装置 | |
JP5915677B2 (ja) | 半導体装置 | |
JP2018060943A (ja) | スイッチング素子 | |
JP6299658B2 (ja) | 絶縁ゲート型スイッチング素子 | |
JP5156238B2 (ja) | 半導体装置 | |
JP6179468B2 (ja) | 半導体装置 | |
JP2020088158A (ja) | スイッチング素子 | |
JP2019160877A (ja) | 半導体装置 | |
JP6411929B2 (ja) | Mosfet | |
JP5884772B2 (ja) | 半導体装置 | |
JP7263978B2 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160218 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160407 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170411 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170424 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6142813 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |