JP5915677B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5915677B2 JP5915677B2 JP2014041744A JP2014041744A JP5915677B2 JP 5915677 B2 JP5915677 B2 JP 5915677B2 JP 2014041744 A JP2014041744 A JP 2014041744A JP 2014041744 A JP2014041744 A JP 2014041744A JP 5915677 B2 JP5915677 B2 JP 5915677B2
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- 239000004065 semiconductor Substances 0.000 title claims description 181
- 239000010410 layer Substances 0.000 claims description 308
- 239000000758 substrate Substances 0.000 claims description 94
- 239000011229 interlayer Substances 0.000 claims description 45
- 239000012535 impurity Substances 0.000 description 27
- 230000015556 catabolic process Effects 0.000 description 17
- 230000002093 peripheral effect Effects 0.000 description 12
- 239000000969 carrier Substances 0.000 description 10
- 230000005684 electric field Effects 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 230000006378 damage Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7815—Vertical DMOS transistors, i.e. VDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
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- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- Condensed Matter Physics & Semiconductors (AREA)
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本明細書または図面に説明した技術要素は、単独であるいは各種の組み合わせによって技術的有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
12 半導体基板
14 上部電極
16 下部電極
20 メイン領域
22 電流センス領域
24 ウェル領域
26 周辺領域
28 コンタクトホール
30 エミッタ層
32 高濃度ボディ層
34 低濃度ボディ層
36 ドリフト層
38 バッファ層
40 コレクタ層
42 メインエミッタ電極
44 トレンチ
46 ゲート絶縁膜
48 ゲート電極
50 層間絶縁膜
52 エミッタ層
54 高濃度ボディ層
56 低濃度ボディ層
58 電流センスエミッタ電極
60 トレンチ
62 ゲート絶縁膜
64 ゲート電極
66 コンタクトホール
68 ウェル層
70 ウェル領域電極
72 コンタクトホール
74 ゲートパッド配置部
100 半導体装置
102 半導体基板
104 上部電極
106 メイン領域
108 電流センス領域
110 ウェル領域
112 ウェル層
114 メインエミッタ電極
116 トレンチ
118 コンタクトホール
120 ウェル層
122 トレンチ
124 コンタクトホール
126 トレンチ
128 ゲート絶縁膜
130 ゲート電極
132 コンタクトホール
200 半導体装置
202 半導体基板
204 メイン領域
206 電流センス領域
208 ウェル領域
210 ウェル層
212 トレンチ
214 コンタクトホール
216 ウェル層
218 トレンチ
220 コンタクトホール
222 トレンチ
224 コンタクトホール
226 距離調整部
Claims (4)
- 半導体装置であって、
メイン領域と、電流センス領域と、メイン領域と電流センス領域の間に配置されたウェル領域を備える半導体基板と、
半導体基板のメイン領域の上方に配置されたメインエミッタ電極と、
半導体基板の電流センス領域の上方に配置された電流センスエミッタ電極と、
半導体基板のウェル領域の上方に配置されたウェル領域電極と、
半導体基板の下方に配置された下部電極を備えており、
メイン領域と電流センス領域がそれぞれ、
半導体基板の上面に露出している第1導電型のエミッタ層と、
エミッタ層の下方に配置されており、半導体基板の上面に露出している第2導電型のボディ層と、
ボディ層の下方に配置された第1導電型のドリフト層と、
半導体基板の上面からボディ層を貫通してドリフト層に達するトレンチの内部に配置されているゲート電極と、
ゲート電極とトレンチの壁面の間を絶縁するゲート絶縁膜と、
半導体基板の上面とメインエミッタ電極または電流センスエミッタ電極の間に形成されており、ゲート電極とメインエミッタ電極または電流センスエミッタ電極の間を絶縁する層間絶縁膜を備えており、
ウェル領域が、
半導体基板の上面に露出しており、メイン領域のトレンチに比べて半導体基板の上面から下端までの深さが深い第2導電型のウェル層と、
ウェル層の下方に配置されており、メイン領域のドリフト層および電流センス領域のドリフト層と連続している第1導電型のドリフト層と、
半導体基板の上面とウェル領域電極の間に形成された層間絶縁膜を備えており、
ウェル層とウェル領域電極が、ウェル領域の層間絶縁膜に形成されたコンタクトホールを介して接触しており、
メイン領域とウェル領域と電流センス領域が並ぶ方向をX方向としたときに、
メイン領域の層間絶縁膜に、X方向に所定のピッチで繰り返すパターンでコンタクトホールが形成されており、
ウェル領域の層間絶縁膜のコンタクトホールの一部が前記所定のピッチとは異なるピッチのパターンで形成されており、他の部分がX方向に前記所定のピッチで繰り返すパターンで形成されている半導体装置。 - 半導体基板を平面視したときに、ウェル領域が電流センス領域を取り囲むように配置されている、請求項1の半導体装置。
- メイン領域とウェル領域が隣接する箇所に、メイン領域のボディ層とドリフト層の境界の深さよりも深いトレンチが、X方向に直交する方向に沿って形成されている、請求項1の半導体装置。
- 電流センス領域が、半導体基板の上面に露出しており、電流センス領域のトレンチに比べて半導体基板の上面から下端までの深さが深い第2導電型のウェル層をさらに備えており、
電流センス領域のウェル層が、電流センス領域とウェル領域が隣接する箇所に配置されており、ドリフト層を介してウェル領域のウェル層とは分離されている、請求項1の半導体装置。
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JP2014041744A JP5915677B2 (ja) | 2014-03-04 | 2014-03-04 | 半導体装置 |
US14/614,991 US9147759B1 (en) | 2014-03-04 | 2015-02-05 | Semiconductor device comprising a main region, a current sense region, and a well region |
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JP2014041744A JP5915677B2 (ja) | 2014-03-04 | 2014-03-04 | 半導体装置 |
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US11121248B2 (en) | 2017-10-05 | 2021-09-14 | Fuji Electric Co., Ltd. | Semiconductor device |
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JP6769165B2 (ja) * | 2016-08-10 | 2020-10-14 | 富士電機株式会社 | 半導体装置 |
JP7139861B2 (ja) * | 2017-12-12 | 2022-09-21 | 富士電機株式会社 | 絶縁ゲート型バイポーラトランジスタ |
JP7359012B2 (ja) * | 2020-02-06 | 2023-10-11 | 株式会社デンソー | スイッチング素子 |
CN116632035A (zh) * | 2023-04-25 | 2023-08-22 | 海信家电集团股份有限公司 | 半导体装置及其制作方法 |
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US5023693A (en) * | 1989-06-06 | 1991-06-11 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Transistor with current sensing function |
US6180966B1 (en) | 1997-03-25 | 2001-01-30 | Hitachi, Ltd. | Trench gate type semiconductor device with current sensing cell |
JP3914328B2 (ja) | 1997-03-25 | 2007-05-16 | 株式会社ルネサステクノロジ | 電流検出セル付トレンチゲート半導体装置および電力変換装置 |
JP2008311300A (ja) * | 2007-06-12 | 2008-12-25 | Toyota Motor Corp | パワー半導体装置、パワー半導体装置の製造方法、およびモータ駆動装置 |
JP5481030B2 (ja) * | 2008-01-30 | 2014-04-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP4877337B2 (ja) * | 2009-02-17 | 2012-02-15 | トヨタ自動車株式会社 | 半導体装置 |
JP2010219258A (ja) | 2009-03-17 | 2010-09-30 | Toyota Motor Corp | 半導体装置 |
JP5417440B2 (ja) * | 2009-05-28 | 2014-02-12 | トヨタ自動車株式会社 | 半導体装置 |
US8097918B2 (en) * | 2009-08-14 | 2012-01-17 | Infineon Technologies Ag | Semiconductor arrangement including a load transistor and sense transistor |
KR101276407B1 (ko) * | 2010-05-07 | 2013-06-19 | 도요타지도샤가부시키가이샤 | 반도체 장치 |
JP5772842B2 (ja) * | 2013-01-31 | 2015-09-02 | 株式会社デンソー | 炭化珪素半導体装置 |
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US11121248B2 (en) | 2017-10-05 | 2021-09-14 | Fuji Electric Co., Ltd. | Semiconductor device |
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US9147759B1 (en) | 2015-09-29 |
JP2015167208A (ja) | 2015-09-24 |
US20150255587A1 (en) | 2015-09-10 |
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