JP5852555B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5852555B2 JP5852555B2 JP2012282290A JP2012282290A JP5852555B2 JP 5852555 B2 JP5852555 B2 JP 5852555B2 JP 2012282290 A JP2012282290 A JP 2012282290A JP 2012282290 A JP2012282290 A JP 2012282290A JP 5852555 B2 JP5852555 B2 JP 5852555B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- exposed portion
- drift region
- semiconductor device
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 41
- 210000000746 body region Anatomy 0.000 claims description 46
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 16
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 28
- 230000004888 barrier function Effects 0.000 description 20
- 238000000034 method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Description
(特徴2)ボディ領域は、ドリフト領域の露出部分とソース領域の間に、不純物濃度が残部よりも濃いコンタクト領域を有していてもよい。さらに、溝内に設けられたショットキー電極は、コンタクト領域よりも深くてもよい。この形態によると、コンタクト領域からドリフト領域の露出部分に伸びてくる空乏層よりも深い位置までショットキー電極が設けられているので、空乏層の影響が抑えられ、ショットキーバリアダイオードの順方向電圧の増加が抑えられる。
(特徴3)特徴2において、ゲート部は、半導体層を平面視したときに、第1方向に沿って伸びていてもよい。この場合、第1方向に直交する第2方向におけるドリフト領域の露出部分の幅とボディ領域のコンタクト領域の幅の比が、第1方向に沿って変化するように構成されていてもよい。即ち、この形態によると、第1方向に沿って観測したときに、ドリフト領域の露出部分の幅が広い部分(ボディ領域のコンタクト領域の幅が狭い部分)とドリフト領域の露出部分の幅が狭い部分(ボディ領域のコンタクト領域の幅が広い部分)が存在している。このため、ドリフト領域の露出部分の幅が広い部分(ボディ領域のコンタクト領域の幅が狭い部分)が存在することによって、ショットキーバリアダイオードの順方向電圧の増加が抑えられる。さらに、ドリフト領域の露出部分の幅が狭い部分(ボディ領域のコンタクト領域の幅が広い部分)が存在することによって、ラッチアップが抑えられる。
(特徴4)溝内に設けられたショットキー電極は、ボディ領域よりも浅くてもよい。この形態によると、ショットキー電極の底面における電界集中が緩和され、耐量が向上する。
(特徴5)半導体層の半導体材料が炭化珪素であってもよい。
20:炭化珪素層
21:基板
22:ドリフト領域
23:ボディ領域
24:ソース領域
25:コンタクト領域
26:露出部分
30:ソース電極
32:トレンチショットキー電極
34:溝
40:トレンチゲート
42:トレンチゲート電極
44:ゲート絶縁膜
Claims (6)
- 半導体層の表面に露出する露出部分を有する第1導電型のドリフト領域と、
前記ドリフト領域の前記露出部分を間に置いて設けられている第2導電型のボディ領域と、
前記ボディ領域によって前記ドリフト領域から隔てられている第1導電型のソース領域と、
前記半導体層の前記表面から前記ボディ領域を貫通しており、前記ドリフト領域と前記ソース領域を隔てている前記ボディ領域に対向するトレンチゲート部と、
前記ドリフト領域の前記露出部分にショットキー接触するショットキー電極と、
前記ショットキー電極の底面に接する絶縁領域と、を備えており、
前記ドリフト領域の前記露出部分に溝が形成されており、
前記ショットキー電極が前記溝内に設けられている半導体装置。 - 前記ボディ領域は、前記ドリフト領域の前記露出部分と前記ソース領域の間に、不純物濃度が残部よりも濃いコンタクト領域を有しており、
前記溝内に設けられた前記ショットキー電極は、前記コンタクト領域よりも深い請求項1に記載の半導体装置。 - 前記トレンチゲート部は、前記半導体層を平面視したときに、第1方向に沿って伸びており、
前記第1方向に直交する第2方向における前記ドリフト領域の前記露出部分の幅と前記ボディ領域の前記コンタクト領域の幅の比が、前記第1方向に沿って変化するように構成されている請求項2に記載の半導体装置。 - 前記溝内に設けられた前記ショットキー電極は、前記ボディ領域よりも浅い請求項1〜3のいずれか一項に記載の半導体装置。
- 前記ボディ領域のコーナー部に設けられており、前記ボディ領域の前記コーナー部よりも不純物濃度が濃い第2導電型の高濃度コーナー領域をさらに備える請求項1〜4のいずれか一項に記載の半導体装置。
- 前記半導体層の半導体材料が炭化珪素である請求項1〜5のいずれか一項に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012282290A JP5852555B2 (ja) | 2012-12-26 | 2012-12-26 | 半導体装置 |
US14/138,456 US20140175508A1 (en) | 2012-12-26 | 2013-12-23 | Semiconductor device with schottky barrier diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012282290A JP5852555B2 (ja) | 2012-12-26 | 2012-12-26 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014127555A JP2014127555A (ja) | 2014-07-07 |
JP5852555B2 true JP5852555B2 (ja) | 2016-02-03 |
Family
ID=50973662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012282290A Expired - Fee Related JP5852555B2 (ja) | 2012-12-26 | 2012-12-26 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20140175508A1 (ja) |
JP (1) | JP5852555B2 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015170654A (ja) * | 2014-03-05 | 2015-09-28 | 株式会社東芝 | 半導体装置 |
JP6699099B2 (ja) | 2014-06-20 | 2020-05-27 | 三菱ケミカル株式会社 | ポリカーボネートジオールおよびその製造方法並びにそれを用いたポリウレタン |
JP6550802B2 (ja) * | 2015-03-10 | 2019-07-31 | 富士電機株式会社 | 半導体素子 |
DE102015121566B4 (de) * | 2015-12-10 | 2021-12-09 | Infineon Technologies Ag | Halbleiterbauelemente und eine Schaltung zum Steuern eines Feldeffekttransistors eines Halbleiterbauelements |
CN117174755A (zh) * | 2017-01-25 | 2023-12-05 | 罗姆股份有限公司 | 半导体装置 |
JP7059556B2 (ja) * | 2017-10-05 | 2022-04-26 | 富士電機株式会社 | 半導体装置 |
JP6984347B2 (ja) * | 2017-11-24 | 2021-12-17 | 富士電機株式会社 | 半導体装置 |
JP7176239B2 (ja) * | 2018-06-14 | 2022-11-22 | 富士電機株式会社 | 半導体装置 |
JP7101101B2 (ja) * | 2018-11-15 | 2022-07-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US11848358B2 (en) * | 2018-12-10 | 2023-12-19 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device and method of manufacturing same |
DE102019130376A1 (de) * | 2019-01-04 | 2020-07-09 | Infineon Technologies Ag | Siliziumcarbid-vorrichtung mit schottky-kontakt |
EP3881360B1 (en) * | 2019-11-08 | 2022-05-04 | Hitachi Energy Switzerland AG | Insulated gate bipolar transistor |
CN111933711B (zh) * | 2020-08-18 | 2022-08-23 | 电子科技大学 | 一种集成sbd的超结mosfet |
WO2022064613A1 (ja) * | 2020-09-24 | 2022-03-31 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
WO2024013868A1 (ja) * | 2022-07-13 | 2024-01-18 | 三菱電機株式会社 | 半導体装置、および、電力変換装置 |
JP2024130307A (ja) * | 2023-03-14 | 2024-09-30 | 株式会社東芝 | 半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02100367A (ja) * | 1988-10-07 | 1990-04-12 | Nissan Motor Co Ltd | 縦型伝導度変調型mosfet |
JP3173117B2 (ja) * | 1992-03-30 | 2001-06-04 | 株式会社村田製作所 | ショットキーバリア半導体装置 |
TW554528B (en) * | 2002-02-21 | 2003-09-21 | Delta Electronics Inc | Low forward voltage drop Schottky barrier diode and the manufacturing method thereof |
US8772785B2 (en) * | 2008-12-26 | 2014-07-08 | Renesas Electronics Corporation | Semiconductor device, schottky barrier diode, electronic apparatus, and method of producing semiconductor device |
US9184286B2 (en) * | 2011-02-02 | 2015-11-10 | Rohm Co., Ltd. | Semiconductor device having a breakdown voltage holding region |
-
2012
- 2012-12-26 JP JP2012282290A patent/JP5852555B2/ja not_active Expired - Fee Related
-
2013
- 2013-12-23 US US14/138,456 patent/US20140175508A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20140175508A1 (en) | 2014-06-26 |
JP2014127555A (ja) | 2014-07-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5852555B2 (ja) | 半導体装置 | |
JP4265684B1 (ja) | 半導体装置 | |
JP5991020B2 (ja) | 炭化珪素単結晶を主材料とする半導体装置 | |
JP6720818B2 (ja) | 半導体装置 | |
JP5720582B2 (ja) | スイッチング素子 | |
JP6606007B2 (ja) | スイッチング素子 | |
JP6453188B2 (ja) | 炭化珪素半導体装置 | |
JP2012069797A (ja) | 絶縁ゲート型トランジスタ | |
JP2020077800A (ja) | 半導体装置 | |
US8829563B2 (en) | Power semiconductor device and method for manufacturing such a power semiconductor device | |
JP6514035B2 (ja) | 半導体装置 | |
JP6536377B2 (ja) | 半導体装置 | |
JP6169985B2 (ja) | 半導体装置 | |
JP5915677B2 (ja) | 半導体装置 | |
JP6283709B2 (ja) | 半導体装置 | |
JP2018060943A (ja) | スイッチング素子 | |
JP2014103352A (ja) | 半導体装置 | |
JP2016213421A (ja) | 半導体装置 | |
JP4692313B2 (ja) | 半導体装置 | |
WO2013179820A1 (ja) | 半導体装置 | |
JP2016149429A (ja) | 逆導通igbt | |
JP2018098447A (ja) | Mosfet | |
JP6754308B2 (ja) | 半導体装置 | |
JP2021034528A (ja) | スイッチング素子 | |
JP6784164B2 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140415 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141020 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141118 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150113 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150623 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150824 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20151201 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151204 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5852555 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |