JP6053050B2 - 逆導通igbt - Google Patents
逆導通igbt Download PDFInfo
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- JP6053050B2 JP6053050B2 JP2014251967A JP2014251967A JP6053050B2 JP 6053050 B2 JP6053050 B2 JP 6053050B2 JP 2014251967 A JP2014251967 A JP 2014251967A JP 2014251967 A JP2014251967 A JP 2014251967A JP 6053050 B2 JP6053050 B2 JP 6053050B2
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- 239000004065 semiconductor Substances 0.000 claims description 86
- 230000004888 barrier function Effects 0.000 claims description 60
- 210000000746 body region Anatomy 0.000 claims description 53
- 238000007667 floating Methods 0.000 claims description 29
- 239000010410 layer Substances 0.000 description 85
- 239000002344 surface layer Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Description
図4に、変形例の逆導通IGBT2を示す。逆導通IGBT2の半導体層10は、電位がフローティングであるn型のフローティング領域42を備えていることを特徴とする。フローティング領域42は、半導体層10の表層部に配置されている。フローティング領域42は、ボディ領域15内に配置されており、絶縁トレンチゲート部30の側面に接しており、ボディ領域15によってドリフト領域14、エミッタ領域16、ボディコンタクト領域17、バリア領域18及びピラー領域19から隔てられている。フローティング領域42は、イオン注入技術を利用して、半導体層10の表面10Bから半導体層10の表層部の一部にリンを導入することで形成されている。
Claims (5)
- 逆導通IGBTであって、
半導体層と、
前記半導体層の一方の主面を被膜するエミッタ電極と、
前記半導体層の一方の主面から前記半導体層内に向けて伸びる絶縁トレンチゲート部と、を備え、
前記半導体層は、
前記絶縁トレンチゲート部に接する第1導電型のドリフト領域と、
前記ドリフト領域上に設けられており、前記絶縁トレンチゲート部に接する第2導電型のボディ領域と、
前記ボディ領域内に設けられており、前記半導体層の一方の主面から伸びるピラー部を介して前記エミッタ電極と電気的に接続されている第1導電型のバリア領域と、を備え、
前記バリア領域が、前記絶縁トレンチゲート部の側面に接していない、逆導通IGBT。 - 前記バリア領域が前記絶縁トレンチゲート部の側面から離れる距離は、前記絶縁トレンチゲート部の側面に形成される反転層の幅よりも長い、請求項1に記載の逆導通IGBT。
- 前記半導体層は、
前記ボディ領域内に設けられており、電位がフローティングの第1導電型のフローティング領域をさらに有し、
前記フローティング領域は、前記半導体層の一方の主面に直交する方向から観測したときに、前記絶縁トレンチゲート部の側面と前記バリア領域の間の範囲の少なくとも一部に配置されている、請求項1又は2に記載の逆導通IGBT。 - 前記フローティング領域は、前記半導体層の深さ方向において、前記バリア領域よりも下方に配置されている、請求項3に記載の逆導通IGBT。
- 前記フローティング領域は、前記半導体層の一方の主面に直交する方向から観測したときに、前記絶縁トレンチゲート部の側面から前記バリア領域と重複する位置まで伸びている、請求項4に記載の逆導通IGBT。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014251967A JP6053050B2 (ja) | 2014-12-12 | 2014-12-12 | 逆導通igbt |
US14/925,146 US9536961B2 (en) | 2014-12-12 | 2015-10-28 | Reverse conducting insulated gate bipolar transistor |
DE102015121514.4A DE102015121514B4 (de) | 2014-12-12 | 2015-12-10 | Umgekehrt leitender bipolarer Transistor mit isoliertem Gate |
Applications Claiming Priority (1)
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JP2014251967A JP6053050B2 (ja) | 2014-12-12 | 2014-12-12 | 逆導通igbt |
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JP2016115763A JP2016115763A (ja) | 2016-06-23 |
JP6053050B2 true JP6053050B2 (ja) | 2016-12-27 |
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JP2014251967A Active JP6053050B2 (ja) | 2014-12-12 | 2014-12-12 | 逆導通igbt |
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US (1) | US9536961B2 (ja) |
JP (1) | JP6053050B2 (ja) |
DE (1) | DE102015121514B4 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016096307A (ja) * | 2014-11-17 | 2016-05-26 | トヨタ自動車株式会社 | 半導体装置 |
JP6053050B2 (ja) | 2014-12-12 | 2016-12-27 | 株式会社豊田中央研究所 | 逆導通igbt |
JP6441192B2 (ja) * | 2015-09-11 | 2018-12-19 | 株式会社東芝 | 半導体装置 |
JP6551156B2 (ja) * | 2015-10-29 | 2019-07-31 | 富士電機株式会社 | スーパージャンクション型mosfetデバイスおよび半導体チップ |
CN106067480B (zh) * | 2016-07-26 | 2018-12-18 | 电子科技大学 | 一种双通道rc-ligbt器件及其制备方法 |
DE102017107174B4 (de) | 2017-04-04 | 2020-10-08 | Infineon Technologies Ag | IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT |
DE102017118665A1 (de) | 2017-08-16 | 2019-02-21 | Infineon Technologies Ag | Rc-igbt |
JP6946922B2 (ja) * | 2017-10-18 | 2021-10-13 | 株式会社デンソー | 半導体装置 |
DE102017124871B4 (de) * | 2017-10-24 | 2021-06-17 | Infineon Technologies Ag | Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung |
DE102017124872B4 (de) | 2017-10-24 | 2021-02-18 | Infineon Technologies Ag | Verfahren zur Herstellung eines IGBT mit dV/dt-Steuerbarkeit |
CN109755289B (zh) * | 2017-11-01 | 2020-11-24 | 苏州东微半导体有限公司 | 一种沟槽型超结功率器件 |
CN112885900B (zh) * | 2019-11-29 | 2022-04-15 | 苏州东微半导体股份有限公司 | 一种igbt器件 |
JP2024037582A (ja) * | 2022-09-07 | 2024-03-19 | 株式会社東芝 | 半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5594276B2 (ja) * | 2010-12-08 | 2014-09-24 | 株式会社デンソー | 絶縁ゲート型半導体装置 |
JP5919121B2 (ja) * | 2011-07-27 | 2016-05-18 | 株式会社豊田中央研究所 | ダイオードおよび半導体装置 |
US9214521B2 (en) * | 2012-06-21 | 2015-12-15 | Infineon Technologies Ag | Reverse conducting IGBT |
KR20140038750A (ko) * | 2012-09-21 | 2014-03-31 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
JP6053050B2 (ja) | 2014-12-12 | 2016-12-27 | 株式会社豊田中央研究所 | 逆導通igbt |
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2014
- 2014-12-12 JP JP2014251967A patent/JP6053050B2/ja active Active
-
2015
- 2015-10-28 US US14/925,146 patent/US9536961B2/en active Active
- 2015-12-10 DE DE102015121514.4A patent/DE102015121514B4/de active Active
Also Published As
Publication number | Publication date |
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JP2016115763A (ja) | 2016-06-23 |
DE102015121514B4 (de) | 2019-07-18 |
US20160172453A1 (en) | 2016-06-16 |
US9536961B2 (en) | 2017-01-03 |
DE102015121514A1 (de) | 2016-06-16 |
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