JP6952631B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6952631B2 JP6952631B2 JP2018053122A JP2018053122A JP6952631B2 JP 6952631 B2 JP6952631 B2 JP 6952631B2 JP 2018053122 A JP2018053122 A JP 2018053122A JP 2018053122 A JP2018053122 A JP 2018053122A JP 6952631 B2 JP6952631 B2 JP 6952631B2
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- 239000004065 semiconductor Substances 0.000 title claims description 66
- 238000009792 diffusion process Methods 0.000 claims description 127
- 239000012535 impurity Substances 0.000 claims description 21
- 238000011084 recovery Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
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Description
第2導電型の第2半導体領域と、
前記第1半導体領域及び前記第2半導体領域の接合面とは反対側の前記第1半導体領域の一主面上に配置される第1導電層と、
前記接合面とは反対側の前記第2半導体領域の一主面上に配置される第2導電層と、を備え、
前記第1半導体領域は、
第1導電型の第1拡散層と、
前記第1拡散層の一部にそれぞれ離隔して配置され、前記第1拡散層よりも不純物濃度が高い第1導電型の複数の第2拡散層と、
前記第1半導体領域及び前記第2半導体領域に包含ないし接触するようにそれぞれ離隔して配置され、前記第1拡散層よりも不純物濃度が高い第1導電型の複数の第3拡散層と、を有する、半導体装置が提供される。
図1は第1の実施形態による半導体装置1の断面図である。図1の半導体装置1は、例えばダイオード2である。図1の半導体装置1は、第1導電型の第1半導体領域3と、第2導電型の第2半導体領域4と、第1導電層5と、第2導電層6を備えている。
図14は図1のダイオード2と図2のダイオード2aのアノード領域11近傍のキャリアプロファイルを比較する図である。図14中の曲線cb15は図1のダイオード2の電子濃度、曲線cb16は図2のダイオード2aの電子濃度、曲線cb17は図1のダイオード2の不純物濃度、曲線cb18は図2のダイオード2aの不純物濃度である。
図1のダイオード2におけるp+型拡散層16は、p- -型拡散層15内の正孔の量を調整するために設けられている。また、p- -型拡散層15に包含ないし接触するように配置される複数のp型拡散層17のピッチは、カソード領域12からアノード領域11に進入する電子の量によって調整される。このように、p+型拡散層16のピッチとp型拡散層17のピッチは、それぞれ異なる条件で最適化されるため、ダイオード2の面内(図1に示す断面内)でのp+型拡散層16とp型拡散層17との距離は相関性がなく、場所によって異なっている。p+型拡散層16とp型拡散層17との距離が断面内の場所により変動すると、断面内の電流密度が場所により変動してしまう。ダイオード2のアノード電極13とカソード電極14間を流れる電流は、すべての断面を流れる電流を積分した値となるため、個々の断面で電流密度が場所により変動しても、すべての断面を合わせたアノード電極13とカソード電極14間での電流密度は一様になる。
Claims (6)
- 第1導電型の第1半導体領域と、
第2導電型の第2半導体領域と、
前記第1半導体領域及び前記第2半導体領域の接合面とは反対側の前記第1半導体領域の一主面上に配置される第1導電層と、
前記接合面とは反対側の前記第2半導体領域の一主面上に配置される第2導電層と、を備え、
前記第1半導体領域は、
前記第1導電層にショットキー接続する第1導電型の第1拡散層と、
前記第1拡散層の一部にそれぞれ離隔して配置され、前記第1拡散層よりも不純物濃度が高い第1導電型の複数の第2拡散層と、
前記第1半導体領域及び前記第2半導体領域に包含ないし接触するようにそれぞれ離隔して配置され、前記第1拡散層よりも不純物濃度が高い第1導電型の複数の第3拡散層と、を有する半導体装置。 - 前記第2拡散層の不純物濃度は、前記第3拡散層の不純物濃度よりも高い、請求項1に記載の半導体装置。
- 前記複数の第3拡散層は、前記第1半導体領域及び前記第2半導体領域に逆方向電圧を印加したときに前記接合面付近に生じる空乏層の前記第1半導体領域への広がりを阻止する、請求項1又は2に記載の半導体装置。
- 前記複数の第2拡散層の長手方向は、前記複数の第3拡散層の長手方向に交差する方向に配置される、請求項1乃至3のいずれか一項に記載の半導体装置。
- 前記第1拡散層及び前記第2拡散層は、前記第1導電層に電気的に接続される、請求項1乃至4のいずれか一項に記載の半導体装置。
- IGBT(Insulated Gate Bipolar Transistor)領域を更に有する請求項1乃至5のいずれか一項に記載の半導体装置。
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JP2018053122A JP6952631B2 (ja) | 2018-03-20 | 2018-03-20 | 半導体装置 |
US16/124,117 US10651169B2 (en) | 2018-03-20 | 2018-09-06 | Semiconductor device and diode |
US16/844,368 US10811406B2 (en) | 2018-03-20 | 2020-04-09 | Semiconductor device and diode |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5418376A (en) * | 1993-03-02 | 1995-05-23 | Toyo Denki Seizo Kabushiki Kaisha | Static induction semiconductor device with a distributed main electrode structure and static induction semiconductor device with a static induction main electrode shorted structure |
JPH0855978A (ja) * | 1994-06-09 | 1996-02-27 | Ngk Insulators Ltd | 半導体装置およびその製造方法 |
JP4119148B2 (ja) | 2002-04-02 | 2008-07-16 | 株式会社東芝 | ダイオード |
JP2010147222A (ja) * | 2008-12-18 | 2010-07-01 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
US8680587B2 (en) * | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
JP6082314B2 (ja) | 2012-11-06 | 2017-02-15 | 株式会社東芝 | 半導体装置 |
US20150318385A1 (en) * | 2012-12-05 | 2015-11-05 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
JP2014154849A (ja) | 2013-02-13 | 2014-08-25 | Toshiba Corp | 半導体装置 |
JP5981859B2 (ja) * | 2013-02-15 | 2016-08-31 | 株式会社豊田中央研究所 | ダイオード及びダイオードを内蔵する半導体装置 |
US9786753B2 (en) * | 2015-07-13 | 2017-10-10 | Diodes Incorporated | Self-aligned dual trench device |
JP6217700B2 (ja) * | 2015-07-21 | 2017-10-25 | トヨタ自動車株式会社 | ダイオード |
JP6588774B2 (ja) | 2015-09-02 | 2019-10-09 | 株式会社東芝 | 半導体装置 |
JP6281548B2 (ja) * | 2015-09-17 | 2018-02-21 | トヨタ自動車株式会社 | 半導体装置 |
US9876011B2 (en) | 2015-11-20 | 2018-01-23 | Kabushiki Kaisha Toshiba | Semiconductor device |
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US20200235093A1 (en) | 2020-07-23 |
US10651169B2 (en) | 2020-05-12 |
US10811406B2 (en) | 2020-10-20 |
US20190296009A1 (en) | 2019-09-26 |
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