JP5924420B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5924420B2 JP5924420B2 JP2014552840A JP2014552840A JP5924420B2 JP 5924420 B2 JP5924420 B2 JP 5924420B2 JP 2014552840 A JP2014552840 A JP 2014552840A JP 2014552840 A JP2014552840 A JP 2014552840A JP 5924420 B2 JP5924420 B2 JP 5924420B2
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- 239000004065 semiconductor Substances 0.000 title claims description 118
- 239000000758 substrate Substances 0.000 claims description 70
- 239000012535 impurity Substances 0.000 claims description 19
- 239000010410 layer Substances 0.000 description 163
- 230000004048 modification Effects 0.000 description 15
- 238000012986 modification Methods 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 3
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- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
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- H01L29/70—Bipolar devices
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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Description
ダイオード領域16におけるアノードコンタクト層20の配置は、上記の実施例のものに限られるものではない。例えば、図4に示す変形例の半導体装置50のように、アノードコンタクト層20は、絶縁ゲート10またはダミーゲート8が伸びる方向(図のY方向)に対して直交する方向(図のX方向)に伸びるように配置されていてもよい。図4に示す変形例では、アノードコンタクト層20は、IGBT領域18においてエミッタ層32が伸びる方向の延長線上にのみ配置されている。図4に示す変形例では、単位IGBT領域18aに隣接する単位ダイオード領域16aにおいて、絶縁ゲート10が伸びる方向(図のY方向)に関して、アノードコンタクト層20とアノード層22が交互に配置されている。
Claims (3)
- IGBT領域とダイオード領域が同一半導体基板に形成されている半導体装置であって、
半導体基板の表面には表面電極が設けられており、半導体基板の裏面には裏面電極が設けられており、
IGBT領域は、
裏面電極に接している第1導電型のコレクタ層と、
コレクタ層に対して半導体基板の表面側に設けられた、第2導電型のIGBTドリフト層と、
IGBTドリフト層に対して半導体基板の表面側に設けられており、表面電極に接している第1導電型のボディ層と、
半導体基板の表面からIGBTドリフト層まで達するトレンチの内部に配置されており、絶縁膜によって半導体基板と表面電極から絶縁されたゲート電極と、
ボディ層と表面電極の間に部分的に設けられており、ゲート電極の絶縁膜と表面電極に接している第2導電型のエミッタ層を備えており、
ダイオード領域は、
裏面電極に接している高い第2導電型のカソード層と、
カソード層に対して半導体基板の表面側に設けられており、不純物濃度がカソード層よりも低い第2導電型のダイオードドリフト層と、
ダイオードドリフト層に対して半導体基板の表面側に設けられており、表面電極に接している第1導電型のアノード層と、
半導体基板の表面からダイオードドリフト層まで達するトレンチの内部に配置されており、絶縁膜によって半導体基板から絶縁されたトレンチ電極と、
アノード層と表面電極の間に部分的に設けられており、表面電極に接している、不純物濃度がアノード層よりも高い第1導電型のアノードコンタクト層を備えており、
IGBT領域は、ゲート電極によって、単位IGBT領域に区画されており、
ダイオード領域と隣接する単位IGBT領域において、半導体基板の表面を平面視したときに、エミッタ層が一方のゲート電極から他方のゲート電極まで伸びて、ボディ層を矩形の範囲に区画するように配置されており、
ダイオード領域は、ゲート電極またはトレンチ電極によって、単位ダイオード領域に区画されており、
IGBT領域と隣接する単位ダイオード領域において、半導体基板の表面を平面視したときに、アノード層とアノードコンタクト層が混在して配置されており、少なくともゲート電極を挟んでエミッタ層と対向する箇所に、アノードコンタクト層が配置されており、
IGBT領域と隣接する単位ダイオード領域において、半導体基板の表面を平面視したときに、ゲート電極が伸びる方向に関して、アノードコンタクト層とアノード層が交互に配置されている、半導体装置。 - IGBT領域と隣接する単位ダイオード領域において、半導体基板の表面を平面視したときに、ゲート電極が伸びる方向に直交する方向に関して、ゲート電極の近傍にアノードコンタクト層が配置されており、単位ダイオード領域の中央にアノード層が配置されている、請求項1の半導体装置。
- IGBT領域とダイオード領域が同一半導体基板に形成されている半導体装置であって、
半導体基板の表面には表面電極が設けられており、半導体基板の裏面には裏面電極が設けられており、
IGBT領域は、
裏面電極に接している第1導電型のコレクタ層と、
コレクタ層に対して半導体基板の表面側に設けられた、第2導電型のIGBTドリフト層と、
IGBTドリフト層に対して半導体基板の表面側に設けられており、表面電極に接している第1導電型のボディ層と、
半導体基板の表面からIGBTドリフト層まで達するトレンチの内部に配置されており、絶縁膜によって半導体基板と表面電極から絶縁されたゲート電極と、
ボディ層と表面電極の間に部分的に設けられており、ゲート電極の絶縁膜と表面電極に接している第2導電型のエミッタ層を備えており、
ダイオード領域は、
裏面電極に接している高い第2導電型のカソード層と、
カソード層に対して半導体基板の表面側に設けられており、不純物濃度がカソード層よりも低い第2導電型のダイオードドリフト層と、
ダイオードドリフト層に対して半導体基板の表面側に設けられており、表面電極に接している第1導電型のアノード層と、
半導体基板の表面からダイオードドリフト層まで達するトレンチの内部に配置されており、絶縁膜によって半導体基板から絶縁されたトレンチ電極と、
アノード層と表面電極の間に部分的に設けられており、表面電極に接している、不純物濃度がアノード層よりも高い第1導電型のアノードコンタクト層を備えており、
IGBT領域は、ゲート電極によって、単位IGBT領域に区画されており、
ダイオード領域と隣接する単位IGBT領域において、半導体基板の表面を平面視したときに、エミッタ層が一方のゲート電極から他方のゲート電極まで伸びて、ボディ層を矩形の範囲に区画するように配置されており、
ダイオード領域は、ゲート電極またはトレンチ電極によって、単位ダイオード領域に区画されており、
IGBT領域と隣接する単位ダイオード領域において、半導体基板の表面を平面視したときに、アノード層とアノードコンタクト層が混在して配置されており、少なくともゲート電極を挟んでエミッタ層と対向する箇所に、アノードコンタクト層が配置されており、 IGBT領域と隣接する単位ダイオード領域において、半導体基板の表面を平面視したときに、ゲート電極が伸びる方向に直交する方向に関して、ゲート電極の近傍にアノードコンタクト層が配置されており、単位ダイオード領域の中央にアノード層が配置されている、半導体装置。
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US10763252B2 (en) | 2017-03-15 | 2020-09-01 | Fuji Electric Co., Ltd. | Semiconductor device |
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JP6184352B2 (ja) * | 2014-03-14 | 2017-08-23 | 株式会社東芝 | 半導体装置 |
JP6221974B2 (ja) | 2014-07-14 | 2017-11-01 | トヨタ自動車株式会社 | 半導体装置 |
JP6245107B2 (ja) * | 2014-08-06 | 2017-12-13 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
WO2016080269A1 (ja) * | 2014-11-17 | 2016-05-26 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6319057B2 (ja) * | 2014-11-21 | 2018-05-09 | 三菱電機株式会社 | 逆導通型半導体装置 |
JP6185511B2 (ja) * | 2015-05-26 | 2017-08-23 | トヨタ自動車株式会社 | 半導体装置 |
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CN109075211B (zh) * | 2016-04-25 | 2023-04-18 | 三菱电机株式会社 | 半导体装置 |
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JP5045733B2 (ja) * | 2008-12-24 | 2012-10-10 | 株式会社デンソー | 半導体装置 |
DE102011079747A1 (de) * | 2010-07-27 | 2012-02-02 | Denso Corporation | Halbleitervorrichtung mit Schaltelement und Freilaufdiode, sowie Steuerverfahren hierfür |
US8716746B2 (en) * | 2010-08-17 | 2014-05-06 | Denso Corporation | Semiconductor device |
JP5636808B2 (ja) * | 2010-08-17 | 2014-12-10 | 株式会社デンソー | 半導体装置 |
JP2012064849A (ja) | 2010-09-17 | 2012-03-29 | Toshiba Corp | 半導体装置 |
CN103765582B (zh) * | 2011-08-30 | 2016-08-24 | 丰田自动车株式会社 | 半导体装置 |
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2012
- 2012-12-20 DE DE112012007249.9T patent/DE112012007249B4/de active Active
- 2012-12-20 CN CN201280077788.5A patent/CN104871312B/zh active Active
- 2012-12-20 JP JP2014552840A patent/JP5924420B2/ja active Active
- 2012-12-20 WO PCT/JP2012/083100 patent/WO2014097454A1/ja active Application Filing
- 2012-12-20 US US14/443,199 patent/US10074719B2/en not_active Expired - Fee Related
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JP2011243694A (ja) * | 2010-05-17 | 2011-12-01 | Denso Corp | 半導体装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US10763252B2 (en) | 2017-03-15 | 2020-09-01 | Fuji Electric Co., Ltd. | Semiconductor device |
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JPWO2014097454A1 (ja) | 2017-01-12 |
US10074719B2 (en) | 2018-09-11 |
WO2014097454A1 (ja) | 2014-06-26 |
DE112012007249T5 (de) | 2015-10-08 |
CN104871312B (zh) | 2017-06-16 |
CN104871312A (zh) | 2015-08-26 |
DE112012007249B4 (de) | 2021-02-04 |
US20150295042A1 (en) | 2015-10-15 |
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