CN105633077A - 反向导通型半导体装置 - Google Patents

反向导通型半导体装置 Download PDF

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CN105633077A
CN105633077A CN201510812427.6A CN201510812427A CN105633077A CN 105633077 A CN105633077 A CN 105633077A CN 201510812427 A CN201510812427 A CN 201510812427A CN 105633077 A CN105633077 A CN 105633077A
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曾根田真也
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Mitsubishi Electric Corp
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Abstract

本发明的目的在于提供一种反向导通型半导体装置，其能够使阻挡金属层与高浓度阳极层之间的接触面积固定。本发明所涉及的反向导通型半导体装置的特征在于，具有：阳极层(40)及高浓度阳极层(42)，它们形成在二极管(14)的上表面侧；以及钨插塞(54)，其经由阻挡金属层(52)而与阳极层(40)及高浓度阳极层(42)相接触，该高浓度阳极层的宽度大于该阻挡金属层与该高浓度阳极层之间的接触宽度。

Description

反向导通型半导体装置
技术领域
本发明涉及一种反向导通型半导体装置，其应用于例如家电产品、电动汽车、铁道、太阳能发电或者风力发电等。
背景技术
在专利文献1中，公开了一种反向导通型半导体装置(RC-IGBT：ReverseConductingInsulatedGateBipolarTransistor)。所谓反向导通型半导体装置，是指在一块半导体衬底形成有IGBT和二极管(FWD:FreeWheelingDiode)。在专利文献1所公开的反向导通型半导体装置中，作为二极管的阳极层而设有p阳极层和p+阳极层，形成p+阳极层与发射极电极之间的欧姆接触。
专利文献1：日本特开2013-197122号公报
在半导体衬底的整个表面形成沟槽栅极的情况下，为了减少阳极层的面积、提高二极管的性能，有时减小沟槽栅极间隔。在减小了沟槽栅极的间隔的情况下，通过铝等接触电极将阳极层与发射极电极连接会变得困难。因此，优选利用钨插塞将发射极电极、与在沟槽栅极之间形成的阳极层进行连接。在使用钨插塞的情况下，为了使得钨插塞的材料不向半导体衬底(阳极层)扩散，在钨插塞与阳极层之间设置阻挡金属。
阻挡金属与阳极层之间的接触部的宽度，比沟槽栅极间隔小。因此，如专利文献1中公开所示，如果将p+阳极层(高浓度阳极层)在俯视观察时形成为岛状，则在钨插塞的形成位置发生了偏离的情况下，存在阻挡金属与高浓度阳极层之间的接触面积发生变化的问题。该接触面积的变化成为二极管的特性波动的原因。
发明内容
本发明是为了解决上述课题而提出的，其目的在于提供一种反向导通型半导体装置，该反向导通型半导体装置能够将阻挡金属层与高浓度阳极层之间的接触面积固定。
本发明所涉及的反向导通型半导体装置的特征在于，具有：第1导电型的半导体衬底，其具有第1主面和第2主面；栅极电极，其隔着栅极氧化膜而形成于在该第1主面呈条带状地设置的多个沟槽中；晶体管，其具有在该第1主面侧形成的发射极层、在该发射极层下形成并与该栅极氧化膜相接触的第2导电型的基极层、以及在该第2主面侧形成的第2导电型的集电极层；二极管，其在该晶体管的旁边形成，具有在该第1主面侧形成的第2导电型的阳极层、在该第1主面侧形成且与该阳极层相比杂质浓度高的第2导电型的高浓度阳极层、以及在该第2主面侧形成的第1导电型的阴极层；层间膜，其在该第1主面上形成，具有避开该栅极电极的正上方并与该栅极电极平行地延伸的贯通槽；阻挡金属层，其以与该阳极层和该高浓度阳极层相接触的方式形成在该贯通槽中；钨插塞，其与阻挡金属层相接触，掩埋该贯通槽；以及发射极电极，其与该钨插塞相接触，该高浓度阳极层的宽度大于该阻挡金属层与该高浓度阳极层之间的接触宽度。
发明的效果
根据本发明，由于相比于阻挡金属层与高浓度阳极层之间的接触宽度而增大了高浓度阳极层的宽度，因此，能够将阻挡金属层与高浓度阳极层之间的接触面积固定。
附图说明
图1是实施方式1所涉及的反向导通型半导体装置的斜视图。
图2是图1的由虚线框II所包围的阳极单元的俯视图。
图3是二极管的反向恢复时的电流波形。
图4是表示FOM的TCAD模拟结果的图表。
图5是表示Irr与VF之间的折衷曲线(trade-offcurve)的图表。
图6是实施方式2所涉及的反向导通型半导体装置的斜视图。
标号的说明
10反向导通型半导体装置，12晶体管，14二极管，16半导体衬底，16a第1主面，16b第2主面，18沟槽，20栅极氧化膜，22栅极电极，40阳极层，42高浓度阳极层，50层间膜，50a贯通槽，52阻挡金属层，54钨插塞，56发射极电极，100高浓度阳极层
具体实施方式
参照附图，对本发明的实施方式所涉及的反向导通型半导体装置进行说明。对相同或对应的结构要素标注相同的标号，有时省略重复的说明。
实施方式1
图1是本发明的实施方式1所涉及的反向导通型半导体装置10的斜视图。反向导通型半导体装置10具有晶体管12、以及在晶体管12的旁边形成的二极管14。晶体管12和二极管14形成在半导体衬底16。半导体衬底16是具有第1主面16a和第2主面16b的第1导电型(n型)的衬底。
在第1主面16a呈条带状地设置有多个沟槽18。在该沟槽18的内壁形成有栅极氧化膜20。而且，沟槽18被与栅极氧化膜20相接触地形成的栅极电极22掩埋。栅极电极22例如由多晶硅形成。沟槽18、栅极氧化膜20以及栅极电极22在晶体管12和二极管14两者处形成。
晶体管12具有在第1主面16a侧形成的发射极层30。发射极层30具有n+发射极层30a和p+发射极层30b。在发射极层30下，设置有与栅极氧化膜20相接触的第2导电型(p型)的基极层32。在第2主面16b侧，形成有第1导电型(n型)的缓冲层34和第2导电型(p型)的集电极层36。集电极层36与集电极电极38相接触。此外，集电极电极38可以采用AlSi-Ti-Ni-Au的4层构造，或者Ti-Ni-Au的3层构造。
二极管14在第1主面16a侧具有第2导电型(p型)的阳极层40、和第2导电型(p+型)的高浓度阳极层42。高浓度阳极层42与阳极层40相比杂质浓度高。在二极管14中的第1主面16a，露出阳极层40和高浓度阳极层42这两者。优选上述的p+发射极层30b和高浓度阳极层42同时地形成。在第2主面16b侧形成有第1导电型(n型)的缓冲层34和第1导电型(n+型)的阴极层44。阴极层44与集电极电极38相接触。
在第1主面16a上，由SiO2等绝缘体形成有层间膜50。层间膜50具有避开栅极电极22的正上方并与栅极电极22平行地延伸的贯通槽50a。贯通槽50a在二极管14处形成在阳极层40及高浓度阳极层42之上，在晶体管12处形成在发射极层30之上。
在层间膜50上和贯通槽50a中形成有阻挡金属层52。阻挡金属层52在二极管14处与阳极层40和高浓度阳极层42相接触，在晶体管12处与发射极层30相接触。此外，阻挡金属层52的材料例如是Ti、TiSi、TiN、Co、CoSi或者Ni。
高浓度阳极层42的宽度x1比阻挡金属层52与高浓度阳极层42之间的接触宽度x2大。因此，即使因为制造波动导致阻挡金属层52的位置向x正负方向发生了偏离，阻挡金属层52与高浓度阳极层42之间的接触面积也不会变化。
贯通槽50a被与阻挡金属层52相接触的钨插塞54所掩埋。钨插塞54与半导体衬底16之间的相互扩散被阻挡金属层52抑制。钨插塞54与发射极电极56相接触。发射极电极56例如由AlSi形成。
另外，在图1中为了方便说明而使第1主面16a的一部分露出。在实际的反向导通型半导体装置中，由层间膜50和阻挡金属层52将第1主面16a覆盖。
图2是图1的由虚线框II所包围的阳极单元的俯视图。所谓阳极单元，是阳极层40和高浓度阳极层42的重复图案(pattern)的单位。阻挡金属层与高浓度阳极层42之间的接触宽度是x2(下面，有时简称为接触宽度x2)。接触面积S1是每个阳极单元的高浓度阳极层42与阻挡金属层之间的接触面积。接触面积S1是由右侧粗框所包围的部分的面积。接触面积S2是每个阳极单元的阳极层40与阻挡金属层之间的接触面积。接触面积S2是由左侧粗框所包围的部分的面积。从图2明确可知，接触面积S1比接触面积S2小。
图3是将二极管从导通状态变为截止状态后的情况下的、反向恢复时的电流波形。在二极管从导通状态变为截止状态时，会从阴极层朝向阳极层流过反向电流。将该反向电流的峰值称作恢复电流(Irr)。因为恢复电流是能量损失，所以必须抑制。为了抑制恢复电流，将阳极的杂质浓度降低。具体地说，通过使接触面积S1变小，从而改善二极管的恢复特性。但是，如果使接触面积S1变小，则接触电阻恶化、载流子注入效率降低。其结果，在以正向偏置向二极管14通电时的压降(VF)会大幅度恶化。
由此，考虑到恢复电流和接触电阻由接触面积S1的大小决定这一情况，将接触面积S1设置为最佳的值。但是，假设在图2所示的高浓度阳极层42的宽度与接触宽度x2相等的情况下，由于制造波动会导致阻挡金属层向x正负方向发生偏离，接触面积S1发生变动。在该情况下，无法维持所希望的接触面积S1。因此，在本发明的实施方式1中，使图1所示的高浓度阳极层42的宽度x1比接触宽度x2大，所以即使存在阻挡金属层的位置偏离，也能够将阻挡金属层52与高浓度阳极层42之间的接触面积S1固定。
下面，针对适当的接触面积S1的大小进行讨论。图4是表示使接触面积S1和接触面积S2的比发生变化时的、FOM的TCAD模拟结果的图表。所谓FOM，是根据100/(VF×Irr)所计算出的值。FOM越大，二极管特性越良好。在TCAD模拟中，将S1和S2的和(合计面积：Stotal)固定。另外，为了模拟接触电阻，构建出相对于高浓度阳极层而连接有串联电阻Ra1[Ω·cm2]、相对于阳极层而连接有串联电阻Ra2[Ω·cm2]的模型，并实施了模拟。此外，串联电阻Ra1以及Ra2是每单位面积的接触电阻值。
在Ra2/Ra1为1.0的情况下，虽然高浓度阳极层与阳极层相比杂质浓度高，但两者的接触电阻相同。在该情况下，与接触面积S1变小相伴，FOM变大，二极管的特性变好。
因为高浓度阳极层与阳极层相比杂质浓度高，所以高浓度阳极层的接触电阻比阳极层的接触电阻小。在Ra2/Ra1为10的情况下，FOM相对于接触面积S1与接触面积S2之间的面积比率具有极大值。即，如果使接触面积S1过小，则虽然恢复特性变好(Irr变小)，但因为每个阳极单元的接触电阻的总和急剧上升、VF上升，所以FOM恶化。在Ra2/Ra1为5的情况下，也显示出与Ra2/Ra1为10的情况相同的倾向。即，如果使接触面积S1过小，则FOM恶化。此外，接触电阻的总和Rtotal由(Ra1×Ra2)/(Stotal×Ra1+(Ra2-Ra1)×S1)得到。
如上所述，如果使接触面积S1不断变小，则恢复特性的改善和接触电阻的上升同时发生，因此作为它们的乘积(product)的FOM具有极大值。根据该模拟结果，FOM的极大点处于S1/(S1+S2)小于0.5的区域，所以为了得到良好的FOM，优选使S1＜S2。更详细地说，优选将接触面积S1和接触面积S2设定为满足0.1＜S1/(S1+S2)＜0.5。
通过使高浓度阳极层42的每单位面积的电阻(Ra1)小于或等于阳极层40的每单位面积的电阻(Ra2)的1/5，从而能够使FOM具备有意义的极大值。因此，优选使Ra1小于或等于Ra2的1/5。
图5是表示Irr与VF之间的折衷曲线的图表。该折衷曲线是针对S1/(S1+S2)为1、0.5、0.2的三个试制品进行实际测量而得到的。通过该图表可知，通过使接触面积S1的面积比率不断变小，从而能够改善二极管的特性。
本发明的实施方式1所涉及的反向导通型半导体装置能够实现各种各样的变形。图1的高浓度阳极层42与栅极氧化膜20相接触，但也可以在与栅极氧化膜20之间设置0.1μm～数μm的间隙而形成高浓度阳极层。另外，二极管14中的沟槽18也可以不由栅极电极22掩埋而是由绝缘膜掩埋。
虽然半导体衬底16也可以由Si形成，但优选由宽带隙半导体形成。作为宽带隙半导体，例如具有碳化硅、氮化镓类材料或者金刚石。另外，虽然使第1导电型为n型，使第2导电型为p型，但也可以使导电型调转。此外，这些变形也能够适当应用于以下的实施方式所涉及的反向导通型半导体装置中。
实施方式2
图6是本发明的实施方式2所涉及的反向导通型半导体装置的斜视图。实施方式2所涉及的反向导通型半导体装置与实施方式1的共通点很多，因此以与实施方式1的不同点为中心进行说明。高浓度阳极层100在俯视观察时配置为交错状。即，以高浓度阳极层100没有经由栅极氧化膜20和栅极电极22与其他高浓度阳极层相接触的方式，使高浓度阳极层形成为锯齿形。
通过使高浓度阳极层100在俯视观察时配置为交错状，从而能够使二极管14内的电流分布均等化。通过使电流分布均等，从而能够防止二极管14的特定的部位变为高温。

Claims (7)

1.一种反向导通型半导体装置，其特征在于，具有：
第1导电型的半导体衬底，其具有第1主面和第2主面；
栅极电极，其隔着栅极氧化膜而形成于在所述第1主面呈条带状地设置的多个沟槽中；
晶体管，其具有在所述第1主面侧形成的发射极层、在所述发射极层下形成并与所述栅极氧化膜相接触的第2导电型的基极层、以及在所述第2主面侧形成的第2导电型的集电极层；
二极管，其在所述晶体管的旁边形成，具有在所述第1主面侧形成的第2导电型的阳极层、在所述第1主面侧形成且与所述阳极层相比杂质浓度高的第2导电型的高浓度阳极层、以及在所述第2主面侧形成的第1导电型的阴极层；
层间膜，其在所述第1主面上形成，具有避开所述栅极电极的正上方并与所述栅极电极平行地延伸的贯通槽；
阻挡金属层，其以与所述阳极层和所述高浓度阳极层相接触的方式形成在所述贯通槽中；
钨插塞，其与阻挡金属层相接触，掩埋所述贯通槽；以及
发射极电极，其与所述钨插塞相接触，
所述高浓度阳极层的宽度大于所述阻挡金属层与所述高浓度阳极层之间的接触宽度。
2.根据权利要求1所述的反向导通型半导体装置，其特征在于，
每个阳极单元的所述高浓度阳极层与所述阻挡金属层之间的接触面积S1，比每个所述阳极单元的所述阳极层与所述阻挡金属层之间的接触面积S2小，其中，阳极单元是所述阳极层和所述高浓度阳极层的重复图案的单位。
3.根据权利要求2所述的反向导通型半导体装置，其特征在于，
所述接触面积S1和所述接触面积S2满足0.1＜S1/(S1+S2)＜0.5。
4.根据权利要求1至3中任一项所述的反向导通型半导体装置，其特征在于，
所述高浓度阳极层的每单位面积的电阻小于或等于所述阳极层的每单位面积的电阻的1/5。
5.根据权利要求1至3中任一项所述的反向导通型半导体装置，其特征在于，
所述高浓度阳极层在俯视观察时配置为交错状。
6.根据权利要求1至3中任一项所述的反向导通型半导体装置，其特征在于，
所述半导体衬底由宽带隙半导体形成。
7.根据权利要求6所述的反向导通型半导体装置，其特征在于，
所述宽带隙半导体是碳化硅、氮化镓类材料或者金刚石。
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