JP4913336B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4913336B2 JP4913336B2 JP2004281002A JP2004281002A JP4913336B2 JP 4913336 B2 JP4913336 B2 JP 4913336B2 JP 2004281002 A JP2004281002 A JP 2004281002A JP 2004281002 A JP2004281002 A JP 2004281002A JP 4913336 B2 JP4913336 B2 JP 4913336B2
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- 239000004065 semiconductor Substances 0.000 title claims description 72
- 230000005669 field effect Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 239000010410 layer Substances 0.000 description 33
- 230000002093 peripheral effect Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000002457 bidirectional effect Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本実施の形態に係るMOSFET100を図1(a)および図1(b)に示す。
本実施形態に係るMOSFET200は、ゲートパッド部に双方向保護ダイオードが形成された点で第1の実施の形態と異なる。
60 セル領域
70 外周部
100 MOSFET
101 半導体層
101a シリコン基板
102 チャネル拡散領域
103 ソース領域
104 酸化膜
105 ゲート電極
105a ゲート電極
106 ゲートポリシリコン
106a ゲートポリシリコン
111 溝
112 溝
118 酸化膜
130 絶縁膜
132 ポリシリコン
140 双方向保護ダイオード
150 ソース電極
152 ゲート電極
160 ドレイン電極
200 MOSFET
Claims (6)
- 電界効果型トランジスタを有する半導体装置であって、
前記電界効果型トランジスタは、
半導体基板と、
前記半導体基板上に形成された半導体層と、
前記半導体層内に形成されたトレンチと、
前記トレンチ内にゲート絶縁膜を介して設けられたゲート電極と、
前記トレンチ内部において、前記ゲート電極の上部に設けられた絶縁膜と、
前記半導体層上面において前記トレンチの脇に設けられたベース領域と、
前記ベース領域上面において前記トレンチの脇に設けられたソース領域と、
前記絶縁膜および前記ソース領域の上部に設けられたソース電極と、
前記トレンチ下部に設けられたドレイン領域と、
前記半導体基板裏面に設けられたドレイン電極と、
を備え、
前記絶縁膜は、前記ゲート電極と前記ソース電極とを絶縁し、
前記半導体装置は、セル部と、該セル部の周囲に設けられた終端部とを備え、
前記セル部に前記電界効果型トランジスタを有するとともに、前記終端部にトレンチを有し、
前記終端部に設けられたトレンチの底面が、前記セル部に設けられた前記電界効果型トランジスタのトレンチの底面よりも下方に位置し、且つ、前記ベース領域と前記半導体層間のPN接合よりも下方に位置しており、
前記終端部に設けられたトレンチの底面には、前記ゲート絶縁膜の厚さよりも厚い酸化膜が形成されており、
前記終端部に設けられたトレンチの底面が、前記セル部に設けられたトレンチの底面よりも下方に位置し、且つ、前記ベース領域と前記半導体層間のPN接合よりも下方に位置しており、前記終端部に前記酸化膜が形成されていることによって、前記セル部の空乏層を遮断することを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記セル部に設けられた絶縁膜および前記終端部に設けられた絶縁膜の上面のすべてのレベルが、前記半導体層の上面のレベルと同じ、もしくは下方に位置することを特徴とする半導体装置。 - 電界効果型トランジスタを有する半導体装置であって、
前記電界効果型トランジスタは、
半導体基板と、
前記半導体基板上に形成された半導体層と、
前記半導体層内に形成されたトレンチと、
前記トレンチ内にゲート絶縁膜を介して設けられたゲート電極と、
前記トレンチ内部において、前記ゲート電極の上部に設けられた絶縁膜と、
前記半導体層上面において前記トレンチの脇に設けられたベース領域と、
前記ベース領域上面において前記トレンチの脇に設けられたソース領域と、
前記絶縁膜および前記ソース領域の上部に設けられたソース電極と、
前記トレンチ下部に設けられたドレイン領域と、
前記半導体基板裏面に設けられたドレイン電極と、
を備え、
前記絶縁膜は、前記ゲート電極と前記ソース電極とを絶縁し、
前記半導体装置は、セル部と、該セル部の周囲に設けられた終端部とを備え、
前記セル部に前記電界効果型トランジスタを有するとともに、前記終端部にトレンチを有し、
前記終端部に設けられたトレンチの底面が、前記セル部に設けられた前記電界効果型トランジスタのトレンチの底面よりも下方に位置し、且つ、前記ベース領域と前記半導体層間のPN接合よりも下方に位置しており、
前記終端部に設けられたトレンチの底面には、前記ゲート絶縁膜の厚さよりも厚い酸化膜が形成されており、
前記セル部に設けられた絶縁膜および前記終端部に設けられた絶縁膜の上面のすべてのレベルが、前記半導体層の上面のレベルと同じ、もしくは下方に位置することを特徴とする半導体装置。 - 請求項1〜3のいずれか一項に記載の半導体装置において、
前記終端部に設けられたトレンチに半導体素子が設けられたことを特徴とする半導体装置。 - 請求項4に記載の半導体装置において、
前記半導体素子が、ダイオードであることを特徴とする半導体装置。 - 請求項4に記載の半導体装置において、
前記半導体素子が、電界効果型トランジスタであることを特徴とする半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004281002A JP4913336B2 (ja) | 2004-09-28 | 2004-09-28 | 半導体装置 |
US11/229,524 US7727831B2 (en) | 2004-09-28 | 2005-09-20 | Semiconductor device |
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JP2004281002A JP4913336B2 (ja) | 2004-09-28 | 2004-09-28 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2006100317A JP2006100317A (ja) | 2006-04-13 |
JP4913336B2 true JP4913336B2 (ja) | 2012-04-11 |
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JP2004281002A Expired - Fee Related JP4913336B2 (ja) | 2004-09-28 | 2004-09-28 | 半導体装置 |
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US (1) | US7727831B2 (ja) |
JP (1) | JP4913336B2 (ja) |
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US9437729B2 (en) * | 2007-01-08 | 2016-09-06 | Vishay-Siliconix | High-density power MOSFET with planarized metalization |
JP4561747B2 (ja) * | 2007-01-11 | 2010-10-13 | 富士電機システムズ株式会社 | 半導体装置 |
US9947770B2 (en) | 2007-04-03 | 2018-04-17 | Vishay-Siliconix | Self-aligned trench MOSFET and method of manufacture |
JP5502468B2 (ja) * | 2007-04-27 | 2014-05-28 | ローム株式会社 | 半導体装置の製造方法および半導体装置 |
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