WO2008139898A1 - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置 Download PDFInfo
- Publication number
- WO2008139898A1 WO2008139898A1 PCT/JP2008/058099 JP2008058099W WO2008139898A1 WO 2008139898 A1 WO2008139898 A1 WO 2008139898A1 JP 2008058099 W JP2008058099 W JP 2008058099W WO 2008139898 A1 WO2008139898 A1 WO 2008139898A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor device
- electrode
- exposed
- oxide film
- arranging
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66719—With a step of forming an insulating sidewall spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
製造プロセスが煩雑になるのを抑制することが可能な半導体装置の製造方法を提供する。この半導体装置(1)の製造方法は、トレンチ(2a)の幅が、トレンチ(2b)の幅より大きくなるように、トレンチ(2aおよび2b)を形成する工程と、電極(3および4)を配置する工程と、酸化膜(14(14b))を配置する工程と、電極(3)の上面が露出するとともに、電極(4)の上面が露出しないように、酸化膜(14)を除去する工程と、酸化膜(15)を配置する工程と、電極(3)の上面が露出するとともに、シリコン基板(2)と電極(4)との上面が露出しないように、酸化膜(15)を除去する工程と、電極(3)上に配線層(6)を配置する工程とを備える。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009514085A JP5502468B2 (ja) | 2007-04-27 | 2008-04-25 | 半導体装置の製造方法および半導体装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-118932 | 2007-04-27 | ||
JP2007118932 | 2007-04-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008139898A1 true WO2008139898A1 (ja) | 2008-11-20 |
Family
ID=40002114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/058099 WO2008139898A1 (ja) | 2007-04-27 | 2008-04-25 | 半導体装置の製造方法および半導体装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5502468B2 (ja) |
TW (1) | TW200849472A (ja) |
WO (1) | WO2008139898A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018170456A (ja) * | 2017-03-30 | 2018-11-01 | エイブリック株式会社 | 半導体装置及びその製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9123559B2 (en) * | 2013-05-31 | 2015-09-01 | Infineon Technologies Ag | Method for producing a semiconductor component |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002270841A (ja) * | 2001-03-13 | 2002-09-20 | Denso Corp | 半導体装置及びその製造方法 |
JP2002373988A (ja) * | 2001-06-14 | 2002-12-26 | Rohm Co Ltd | 半導体装置およびその製法 |
JP2004179277A (ja) * | 2002-11-26 | 2004-06-24 | New Japan Radio Co Ltd | 半導体装置の製造方法 |
JP2004207476A (ja) * | 2002-12-25 | 2004-07-22 | Mitsubishi Electric Corp | 電力用半導体装置及び電力用半導体装置の製造方法 |
JP2004311547A (ja) * | 2003-04-03 | 2004-11-04 | Seiko Instruments Inc | 縦形mosトランジスタの製造方法 |
JP2005191487A (ja) * | 2003-12-26 | 2005-07-14 | Seiko Instruments Inc | 半導体装置およびその製造法 |
JP2006100317A (ja) * | 2004-09-28 | 2006-04-13 | Nec Electronics Corp | 半導体装置 |
JP2006100404A (ja) * | 2004-09-28 | 2006-04-13 | Nec Electronics Corp | 半導体装置及びその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6449242A (en) * | 1987-08-20 | 1989-02-23 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPH0349228A (ja) * | 1989-07-18 | 1991-03-04 | Fuji Electric Co Ltd | 半導体集積回路の製造方法 |
JP2001085520A (ja) * | 1999-09-09 | 2001-03-30 | Seiko Epson Corp | コンタクトプラグ構造及びその製造方法 |
-
2008
- 2008-04-25 TW TW097115433A patent/TW200849472A/zh unknown
- 2008-04-25 JP JP2009514085A patent/JP5502468B2/ja active Active
- 2008-04-25 WO PCT/JP2008/058099 patent/WO2008139898A1/ja active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002270841A (ja) * | 2001-03-13 | 2002-09-20 | Denso Corp | 半導体装置及びその製造方法 |
JP2002373988A (ja) * | 2001-06-14 | 2002-12-26 | Rohm Co Ltd | 半導体装置およびその製法 |
JP2004179277A (ja) * | 2002-11-26 | 2004-06-24 | New Japan Radio Co Ltd | 半導体装置の製造方法 |
JP2004207476A (ja) * | 2002-12-25 | 2004-07-22 | Mitsubishi Electric Corp | 電力用半導体装置及び電力用半導体装置の製造方法 |
JP2004311547A (ja) * | 2003-04-03 | 2004-11-04 | Seiko Instruments Inc | 縦形mosトランジスタの製造方法 |
JP2005191487A (ja) * | 2003-12-26 | 2005-07-14 | Seiko Instruments Inc | 半導体装置およびその製造法 |
JP2006100317A (ja) * | 2004-09-28 | 2006-04-13 | Nec Electronics Corp | 半導体装置 |
JP2006100404A (ja) * | 2004-09-28 | 2006-04-13 | Nec Electronics Corp | 半導体装置及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018170456A (ja) * | 2017-03-30 | 2018-11-01 | エイブリック株式会社 | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200849472A (en) | 2008-12-16 |
JP5502468B2 (ja) | 2014-05-28 |
JPWO2008139898A1 (ja) | 2011-01-27 |
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