WO2009075244A1 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
- Publication number
- WO2009075244A1 WO2009075244A1 PCT/JP2008/072232 JP2008072232W WO2009075244A1 WO 2009075244 A1 WO2009075244 A1 WO 2009075244A1 JP 2008072232 W JP2008072232 W JP 2008072232W WO 2009075244 A1 WO2009075244 A1 WO 2009075244A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- type impurity
- solar cell
- concentration
- diffusion layer
- impurity diffusion
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 5
- 238000009792 diffusion process Methods 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
シリコン基板(1)の一方の表面となる第1の表面の少なくとも一部にp型不純物を拡散させることによって高濃度p型不純物拡散層(2)を形成する工程と、高濃度p型不純物拡散層(2)および高濃度p型不純物拡散層(2)の形成時に高濃度p型不純物拡散層上に形成された膜の少なくとも一方をマスクとしてシリコン基板(1)の第1の表面またはシリコン基板(1)の第1の表面と反対側の第2の表面をエッチングする工程と、を含む、太陽電池の製造方法である。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08860782A EP2224494A1 (en) | 2007-12-13 | 2008-12-08 | Method for manufacturing solar cell |
US12/746,811 US8257994B2 (en) | 2007-12-13 | 2008-12-08 | Method for manufacturing solar cell by forming a high concentration P-type impurity diffusion layer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-322187 | 2007-12-13 | ||
JP2007322187A JP5277485B2 (ja) | 2007-12-13 | 2007-12-13 | 太陽電池の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009075244A1 true WO2009075244A1 (ja) | 2009-06-18 |
Family
ID=40755485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/072232 WO2009075244A1 (ja) | 2007-12-13 | 2008-12-08 | 太陽電池の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8257994B2 (ja) |
EP (1) | EP2224494A1 (ja) |
JP (1) | JP5277485B2 (ja) |
WO (1) | WO2009075244A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2486626A (en) * | 2009-10-20 | 2012-06-27 | Solar Group Pl Sp Z O O | A solar cell and a method for manufacturing of a solar cell |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008052660A1 (de) * | 2008-07-25 | 2010-03-04 | Gp Solar Gmbh | Verfahren zur Herstellung einer Solarzelle mit einer zweistufigen Dotierung |
US8168462B2 (en) * | 2009-06-05 | 2012-05-01 | Applied Materials, Inc. | Passivation process for solar cell fabrication |
JP5170701B2 (ja) * | 2009-07-29 | 2013-03-27 | シャープ株式会社 | 半導体装置の製造方法 |
JP5377226B2 (ja) * | 2009-10-29 | 2013-12-25 | 三菱電機株式会社 | 太陽電池セル及びその製造方法 |
WO2011073971A2 (en) * | 2009-12-16 | 2011-06-23 | Shenkar College Of Engineering And Design | Photovoltaic device and method of its fabrication |
JP5731754B2 (ja) * | 2010-02-18 | 2015-06-10 | 旭化成エレクトロニクス株式会社 | 赤外線センサ |
FR2959351B1 (fr) * | 2010-04-26 | 2013-11-08 | Photowatt Int | Procede de preparation d’une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium |
EP2398071B1 (en) * | 2010-06-17 | 2013-01-16 | Imec | Method for forming a doped region in a semiconductor layer of a substrate and use of such method |
JP5477220B2 (ja) * | 2010-08-05 | 2014-04-23 | 信越化学工業株式会社 | 太陽電池及びその製造方法 |
WO2012024676A2 (en) * | 2010-08-20 | 2012-02-23 | First Solar, Inc. | Anti-reflective photovoltaic module |
JP5595850B2 (ja) * | 2010-09-27 | 2014-09-24 | 三洋電機株式会社 | 太陽電池の製造方法 |
CN102487103B (zh) * | 2010-12-03 | 2014-07-09 | 上海凯世通半导体有限公司 | 太阳能电池及其制备方法 |
TWI407576B (zh) * | 2010-12-22 | 2013-09-01 | Big Sun Energy Tech Inc | 具有差異性摻雜之太陽能電池的製造方法 |
JP5810357B2 (ja) | 2011-02-21 | 2015-11-11 | 株式会社サンケイエンジニアリング | 成膜方法及び成膜装置 |
KR20120110728A (ko) * | 2011-03-30 | 2012-10-10 | 한화케미칼 주식회사 | 태양 전지 및 이의 제조 방법 |
JP5172993B2 (ja) * | 2011-06-10 | 2013-03-27 | シャープ株式会社 | テクスチャ構造の形成方法および太陽電池の製造方法 |
TWI424584B (zh) * | 2011-11-30 | 2014-01-21 | Au Optronics Corp | 製作太陽能電池之方法 |
US20130180577A1 (en) * | 2012-01-18 | 2013-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
JP2013165160A (ja) | 2012-02-10 | 2013-08-22 | Shin Etsu Chem Co Ltd | 太陽電池の製造方法及び太陽電池 |
JP2013168605A (ja) * | 2012-02-17 | 2013-08-29 | Sharp Corp | 太陽電池の製造方法 |
WO2013133005A1 (ja) * | 2012-03-08 | 2013-09-12 | 三洋電機株式会社 | 半導体装置の製造方法 |
WO2013133006A1 (ja) * | 2012-03-08 | 2013-09-12 | 三洋電機株式会社 | 太陽電池の製造方法 |
KR101977927B1 (ko) | 2012-07-11 | 2019-05-13 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 광전소자 및 그 제조방법 |
JP6071318B2 (ja) * | 2012-08-09 | 2017-02-01 | キヤノン株式会社 | 光学部材および光学部材の製造方法 |
WO2014123060A1 (ja) * | 2013-02-06 | 2014-08-14 | PVG Solutions株式会社 | ボロン拡散層形成方法及び太陽電池セルの製造方法 |
JP6282635B2 (ja) * | 2013-04-24 | 2018-02-21 | 三菱電機株式会社 | 太陽電池の製造方法 |
JP6279878B2 (ja) * | 2013-10-31 | 2018-02-14 | 東京応化工業株式会社 | 太陽電池の製造方法 |
JP6114205B2 (ja) * | 2014-01-24 | 2017-04-12 | 信越化学工業株式会社 | 太陽電池の製造方法 |
CN103811591B (zh) * | 2014-02-27 | 2016-10-05 | 友达光电股份有限公司 | 背接触式太阳能电池的制作方法 |
CN204303826U (zh) * | 2014-11-19 | 2015-04-29 | 上海神舟新能源发展有限公司 | 一种高效n型双面太阳电池 |
JP5957102B2 (ja) * | 2015-01-21 | 2016-07-27 | シャープ株式会社 | 太陽電池の製造方法 |
CN107394009B (zh) * | 2017-08-02 | 2019-04-19 | 浙江晶科能源有限公司 | 一种湿法刻蚀方法、双面太阳电池及其制作方法 |
CN109301031B (zh) * | 2018-09-12 | 2021-08-31 | 江苏林洋光伏科技有限公司 | N型双面电池的制作方法 |
CN111081786B (zh) * | 2019-12-24 | 2023-09-29 | 中国电子科技集团公司第十八研究所 | 一种平面串联耐高压二极管及其制备方法 |
CN111463323A (zh) * | 2020-04-30 | 2020-07-28 | 常州时创能源股份有限公司 | 一种p型选择性掺杂方法 |
CN111463322A (zh) * | 2020-04-30 | 2020-07-28 | 常州时创能源股份有限公司 | 一种p型双面电池及其制备方法 |
CN111509057A (zh) * | 2020-04-30 | 2020-08-07 | 常州时创能源股份有限公司 | 一种n型电池及其制备方法 |
CN111584666A (zh) * | 2020-06-09 | 2020-08-25 | 山西潞安太阳能科技有限责任公司 | 一种新的p型晶硅电池结构及其制备工艺 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02123769A (ja) | 1988-11-02 | 1990-05-11 | Shindengen Electric Mfg Co Ltd | 半導体圧力センサ用ダイヤフラム製造方法 |
JP2003197932A (ja) * | 2001-12-25 | 2003-07-11 | Kyocera Corp | 太陽電池素子およびその製造方法 |
JP2005223080A (ja) * | 2004-02-04 | 2005-08-18 | Sharp Corp | 太陽電池の製造方法 |
JP2007049079A (ja) * | 2005-08-12 | 2007-02-22 | Sharp Corp | マスキングペースト、その製造方法およびマスキングペーストを用いた太陽電池の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7468485B1 (en) * | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
US7846823B2 (en) * | 2005-08-12 | 2010-12-07 | Sharp Kabushiki Kaisha | Masking paste, method of manufacturing same, and method of manufacturing solar cell using masking paste |
US20100108134A1 (en) * | 2008-10-31 | 2010-05-06 | Crystal Solar, Inc. | Thin two sided single crystal solar cell and manufacturing process thereof |
-
2007
- 2007-12-13 JP JP2007322187A patent/JP5277485B2/ja active Active
-
2008
- 2008-12-08 US US12/746,811 patent/US8257994B2/en active Active
- 2008-12-08 EP EP08860782A patent/EP2224494A1/en not_active Withdrawn
- 2008-12-08 WO PCT/JP2008/072232 patent/WO2009075244A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02123769A (ja) | 1988-11-02 | 1990-05-11 | Shindengen Electric Mfg Co Ltd | 半導体圧力センサ用ダイヤフラム製造方法 |
JP2003197932A (ja) * | 2001-12-25 | 2003-07-11 | Kyocera Corp | 太陽電池素子およびその製造方法 |
JP2005223080A (ja) * | 2004-02-04 | 2005-08-18 | Sharp Corp | 太陽電池の製造方法 |
JP2007049079A (ja) * | 2005-08-12 | 2007-02-22 | Sharp Corp | マスキングペースト、その製造方法およびマスキングペーストを用いた太陽電池の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2486626A (en) * | 2009-10-20 | 2012-06-27 | Solar Group Pl Sp Z O O | A solar cell and a method for manufacturing of a solar cell |
GB2486626B (en) * | 2009-10-20 | 2012-09-26 | Solar Group Pl Sp Z O O | A solar cell and a method for manufacturing of a solar cell |
Also Published As
Publication number | Publication date |
---|---|
EP2224494A1 (en) | 2010-09-01 |
JP5277485B2 (ja) | 2013-08-28 |
JP2009147070A (ja) | 2009-07-02 |
US20100267187A1 (en) | 2010-10-21 |
US8257994B2 (en) | 2012-09-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2009075244A1 (ja) | 太陽電池の製造方法 | |
WO2009037955A1 (ja) | 太陽電池の製造方法 | |
WO2009011185A1 (ja) | 太陽電池の製造方法 | |
MY187141A (en) | Trench process and structure for backside contact solar cells with polysilicon doped regions | |
TW200709333A (en) | Method for fabricating semiconductor device | |
WO2009025502A3 (en) | Solar cell having porous structure and method for fabrication thereof | |
WO2010052565A3 (en) | Method for manufacturing a solar cell with a two-stage doping | |
WO2008070266A3 (en) | Methods for manufacturing three-dimensional thin-film solar cells | |
EP2087527A1 (en) | Solar cell and method for manufacturing the same | |
WO2010141814A3 (en) | Passivation process for solar cell fabrication | |
WO2006086644A8 (en) | Back-illuminated imaging device and method of fabricating same | |
WO2010093177A3 (en) | Solar cell and method for manufacturing the same | |
EP2080231A1 (en) | Thin film solar cell and method for manufacturing thin film solar cell | |
WO2007059578A8 (en) | High efficiency solar cell fabrication | |
TWI268551B (en) | Method of fabricating semiconductor device | |
WO2008156516A3 (en) | Methods of fabricating silicon carbide power devices by at least partially removing an n-type silicon carbide substrate, and silicon carbide power devices so fabricated | |
WO2009117007A3 (en) | Methods for forming composite nanoparticle-metal metallization contacts on a substrate | |
TW200723440A (en) | Method for forming trench using hard mask with high selectivity and isolation method for semiconductor device using the same | |
WO2008156337A3 (en) | Solar cell, method of fabricating the same and apparatus for fabricating the same | |
EP1873838A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
TW200713420A (en) | Method of fabricating shallow trench isolation structure | |
WO2011081336A3 (ko) | 후면전극형 태양전지의 제조방법 | |
WO2010015310A3 (de) | Solarzelle und verfahren zur herstellung einer solarzelle | |
JP2008519434A5 (ja) | ||
WO2007072655A3 (en) | Lateral soi semiconductor devices and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08860782 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12746811 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2008860782 Country of ref document: EP |