GB2486626B - A solar cell and a method for manufacturing of a solar cell - Google Patents

A solar cell and a method for manufacturing of a solar cell

Info

Publication number
GB2486626B
GB2486626B GB0918355.9A GB0918355A GB2486626B GB 2486626 B GB2486626 B GB 2486626B GB 0918355 A GB0918355 A GB 0918355A GB 2486626 B GB2486626 B GB 2486626B
Authority
GB
United Kingdom
Prior art keywords
solar cell
manufacturing
solar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0918355.9A
Other versions
GB2486626A (en
GB2486626A9 (en
GB0918355D0 (en
Inventor
Olga Jewgienjewna Dracziowa
Walerij Sadbekowicz Ametow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Solar Group Pl Sp Z O O
Original Assignee
Solar Group Pl Sp Z O O
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solar Group Pl Sp Z O O filed Critical Solar Group Pl Sp Z O O
Priority to GB0918355.9A priority Critical patent/GB2486626B/en
Publication of GB0918355D0 publication Critical patent/GB0918355D0/en
Publication of GB2486626A publication Critical patent/GB2486626A/en
Publication of GB2486626A9 publication Critical patent/GB2486626A9/en
Application granted granted Critical
Publication of GB2486626B publication Critical patent/GB2486626B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
GB0918355.9A 2009-10-20 2009-10-20 A solar cell and a method for manufacturing of a solar cell Expired - Fee Related GB2486626B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0918355.9A GB2486626B (en) 2009-10-20 2009-10-20 A solar cell and a method for manufacturing of a solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0918355.9A GB2486626B (en) 2009-10-20 2009-10-20 A solar cell and a method for manufacturing of a solar cell

Publications (4)

Publication Number Publication Date
GB0918355D0 GB0918355D0 (en) 2009-12-02
GB2486626A GB2486626A (en) 2012-06-27
GB2486626A9 GB2486626A9 (en) 2012-08-22
GB2486626B true GB2486626B (en) 2012-09-26

Family

ID=41462620

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0918355.9A Expired - Fee Related GB2486626B (en) 2009-10-20 2009-10-20 A solar cell and a method for manufacturing of a solar cell

Country Status (1)

Country Link
GB (1) GB2486626B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114156169B (en) * 2021-10-15 2022-12-23 浙江爱旭太阳能科技有限公司 Phosphorus diffusion method for SE solar cell and application thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
JPH02143467A (en) * 1988-11-24 1990-06-01 Sharp Corp Manufacture of solar cell
US6624049B1 (en) * 1996-07-08 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
EP1730788A1 (en) * 2004-02-24 2006-12-13 BP Corporation North America Inc. Process for manufacturing photovoltaic cells
EP1964165A2 (en) * 2005-12-21 2008-09-03 Sunpower Corporation Back side contact solar cell structures and fabrication processes
EP2065942A2 (en) * 2007-11-30 2009-06-03 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing photoelectric conversion device
WO2009075244A1 (en) * 2007-12-13 2009-06-18 Sharp Kabushiki Kaisha Method for manufacturing solar cell
WO2009118861A1 (en) * 2008-03-27 2009-10-01 三菱電機株式会社 Photovolatic power device and method for manufacturing the same

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
JPH02143467A (en) * 1988-11-24 1990-06-01 Sharp Corp Manufacture of solar cell
US6624049B1 (en) * 1996-07-08 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
EP1730788A1 (en) * 2004-02-24 2006-12-13 BP Corporation North America Inc. Process for manufacturing photovoltaic cells
EP1964165A2 (en) * 2005-12-21 2008-09-03 Sunpower Corporation Back side contact solar cell structures and fabrication processes
EP2065942A2 (en) * 2007-11-30 2009-06-03 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing photoelectric conversion device
WO2009075244A1 (en) * 2007-12-13 2009-06-18 Sharp Kabushiki Kaisha Method for manufacturing solar cell
WO2009118861A1 (en) * 2008-03-27 2009-10-01 三菱電機株式会社 Photovolatic power device and method for manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
'Epitaxial thin-film Si solar cells', Beaucarne et al. Thin Solid Films Vol. 511-512, pages 533-542 (2006) *

Also Published As

Publication number Publication date
GB2486626A (en) 2012-06-27
GB2486626A9 (en) 2012-08-22
GB0918355D0 (en) 2009-12-02

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)
S20A Reinstatement of application (sect. 20a/patents act 1977)

Free format text: REQUEST FOR REINSTATEMENT FILED

Effective date: 20111219

S20A Reinstatement of application (sect. 20a/patents act 1977)

Free format text: REQUEST FOR REINSTATEMENT ALLOWED

Effective date: 20120509

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20131020