WO2009011185A1 - 太陽電池の製造方法 - Google Patents

太陽電池の製造方法 Download PDF

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Publication number
WO2009011185A1
WO2009011185A1 PCT/JP2008/060544 JP2008060544W WO2009011185A1 WO 2009011185 A1 WO2009011185 A1 WO 2009011185A1 JP 2008060544 W JP2008060544 W JP 2008060544W WO 2009011185 A1 WO2009011185 A1 WO 2009011185A1
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WO
WIPO (PCT)
Prior art keywords
solar cell
mask layer
silicon substrate
conductivity type
cell manufacturing
Prior art date
Application number
PCT/JP2008/060544
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English (en)
French (fr)
Inventor
Yasushi Funakoshi
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to US12/668,069 priority Critical patent/US20100224251A1/en
Publication of WO2009011185A1 publication Critical patent/WO2009011185A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

　太陽電池の製造方法において、シリコン基板（１）の一主面に第１導電型不純物層（３）とその上のマスク層（１３）を形成し、そのマスク層（１３）と第１導電型不純物層（３）とをエッチングし得るエッチングペーストのパターン（５）をマスク層（１３）上に塗布し、そのエッチングペーストパターン（５）の領域においてマスク層（１３）と第１導電型不純物層（３）とをエッチング除去してシリコン基板（１）の一部領域を露出させるようにシリコン基板（１）を加熱処理し、シリコン基板（１）の露出された一部領域に第２導電型不純物層（６）を形成し、そしてマスク層（１３）を除去する工程を含むことを特徴としている。また、その太陽電池の製造方法を用いて製造された太陽電池である。
PCT/JP2008/060544 2007-07-13 2008-06-09 太陽電池の製造方法 WO2009011185A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/668,069 US20100224251A1 (en) 2007-07-13 2008-06-09 Method of manufacturing solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-184432 2007-07-13
JP2007184432A JP5226255B2 (ja) 2007-07-13 2007-07-13 太陽電池の製造方法

Publications (1)

Publication Number Publication Date
WO2009011185A1 true WO2009011185A1 (ja) 2009-01-22

Family

ID=40259526

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060544 WO2009011185A1 (ja) 2007-07-13 2008-06-09 太陽電池の製造方法

Country Status (3)

Country Link
US (1) US20100224251A1 (ja)
JP (1) JP5226255B2 (ja)
WO (1) WO2009011185A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110056551A1 (en) * 2009-09-10 2011-03-10 Sunyoung Kim Solar cell and method for manufacturing the same
CN104538487A (zh) * 2014-11-21 2015-04-22 广东爱康太阳能科技有限公司 一种低杂质含量的太阳能电池制备方法
JP2016506074A (ja) * 2012-12-18 2016-02-25 サンパワー コーポレイション エッチング耐性膜を用いた太陽電池エミッタ領域の製造

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KR101099480B1 (ko) 2009-02-13 2011-12-27 엘지전자 주식회사 태양전지 및 그의 제조방법과 기판 식각 방법
JP5449849B2 (ja) * 2009-04-30 2014-03-19 シャープ株式会社 太陽電池およびその製造方法
DE102010025983A1 (de) 2010-03-03 2011-09-08 Centrotherm Photovoltaics Ag Solarzelle mit dielektrischer Rückseitenverspiegelung und Verfahren zu deren Herstellung
CN102222719B (zh) * 2010-04-14 2013-10-16 圆益Ips股份有限公司 太阳能电池用结晶系硅基板的表面处理方法及太阳能电池的制造方法
US8524524B2 (en) * 2010-04-22 2013-09-03 General Electric Company Methods for forming back contact electrodes for cadmium telluride photovoltaic cells
DE102010028189B4 (de) * 2010-04-26 2018-09-27 Solarworld Industries Gmbh Solarzelle
JP5927549B2 (ja) * 2010-08-24 2016-06-01 パナソニックＩｐマネジメント株式会社 太陽電池及びその製造方法
KR101699297B1 (ko) * 2010-09-08 2017-02-13 엘지전자 주식회사 태양 전지의 제조 방법
JP5595850B2 (ja) * 2010-09-27 2014-09-24 三洋電機株式会社 太陽電池の製造方法
WO2012176527A1 (ja) * 2011-06-20 2012-12-27 シャープ株式会社 結晶太陽電池セルおよび結晶太陽電池セルの製造方法
JP5275415B2 (ja) * 2011-06-20 2013-08-28 シャープ株式会社 結晶太陽電池セルおよび結晶太陽電池セルの製造方法
JP5129369B2 (ja) * 2011-06-20 2013-01-30 シャープ株式会社 結晶太陽電池セルおよび結晶太陽電池セルの製造方法
JP5756352B2 (ja) * 2011-06-21 2015-07-29 シャープ株式会社 裏面電極型太陽電池の製造方法
DE102011088899A1 (de) * 2011-12-16 2013-06-20 International Solar Energy Research Center Konstanz E.V. Rückkontakt-Solarzelle und Verfahren zur Herstellung einer Rückkontakt-Solarzelle
JP5781488B2 (ja) * 2012-11-07 2015-09-24 シャープ株式会社 結晶太陽電池セルおよび結晶太陽電池セルの製造方法
US20140130854A1 (en) * 2012-11-12 2014-05-15 Samsung Sdi Co., Ltd. Photoelectric device and the manufacturing method thereof
US9000414B2 (en) * 2012-11-16 2015-04-07 Korea Photonics Technology Institute Light emitting diode having heterogeneous protrusion structures
US9837575B2 (en) 2013-02-06 2017-12-05 Panasonic Production Engineering Co., Ltd. Method of manufacturing solar battery cell
FR3002689B1 (fr) * 2013-02-25 2016-10-28 Commissariat Energie Atomique Procede de gravure autolimitant a niveaux multiples
US9947812B2 (en) 2014-03-28 2018-04-17 Sunpower Corporation Metallization of solar cells
DE102014105358A1 (de) * 2014-04-15 2015-10-15 Solarworld Innovations Gmbh Solarzelle und Verfahren zum Herstellen einer Solarzelle
US9837259B2 (en) 2014-08-29 2017-12-05 Sunpower Corporation Sequential etching treatment for solar cell fabrication
CN110073504B (zh) * 2016-11-15 2023-04-28 信越化学工业株式会社 高光电转换效率的太阳能电池、其制造方法、太阳能电池组件和光伏发电系统
KR102257824B1 (ko) * 2016-12-05 2021-05-28 엘지전자 주식회사 태양 전지 제조 방법
KR101901894B1 (ko) * 2017-04-12 2018-09-28 엘지전자 주식회사 화합물 반도체 태양전지 및 이의 전면 전극 제조 방법
US11824126B2 (en) 2019-12-10 2023-11-21 Maxeon Solar Pte. Ltd. Aligned metallization for solar cells
CN111354840B (zh) * 2020-04-22 2020-11-03 一道新能源科技(衢州)有限公司 一种选择性发射极双面perc太阳能电池的制备方法

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JP2001267610A (ja) * 2000-03-17 2001-09-28 Hitachi Ltd 太陽電池
JP2003531807A (ja) * 2000-04-28 2003-10-28 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング 無機表面用エッチングペースト
JP2005506705A (ja) * 2001-10-10 2005-03-03 メルク　パテント　ゲゼルシャフト　ミット　ベシュレンクテル　ハフトング エッチングおよびドーピング複合物質
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110056551A1 (en) * 2009-09-10 2011-03-10 Sunyoung Kim Solar cell and method for manufacturing the same
US9236505B2 (en) * 2009-09-10 2016-01-12 Lg Electronics Inc. Solar cell and method for manufacturing the same
JP2016506074A (ja) * 2012-12-18 2016-02-25 サンパワー コーポレイション エッチング耐性膜を用いた太陽電池エミッタ領域の製造
CN104538487A (zh) * 2014-11-21 2015-04-22 广东爱康太阳能科技有限公司 一种低杂质含量的太阳能电池制备方法

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Publication number Publication date
JP5226255B2 (ja) 2013-07-03
US20100224251A1 (en) 2010-09-09
JP2009021494A (ja) 2009-01-29

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