WO2010015310A3 - Solarzelle und verfahren zur herstellung einer solarzelle - Google Patents

Solarzelle und verfahren zur herstellung einer solarzelle Download PDF

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Publication number
WO2010015310A3
WO2010015310A3 PCT/EP2009/005040 EP2009005040W WO2010015310A3 WO 2010015310 A3 WO2010015310 A3 WO 2010015310A3 EP 2009005040 W EP2009005040 W EP 2009005040W WO 2010015310 A3 WO2010015310 A3 WO 2010015310A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
producing
semi
doped regions
structures
Prior art date
Application number
PCT/EP2009/005040
Other languages
English (en)
French (fr)
Other versions
WO2010015310A2 (de
Inventor
Florian Clement
Daniel Biro
geb. LUTSCH Michael MENKÖ
Tim Kubera
Original Assignee
Fraunhofer- Gesellschaft Zur Förderung Der Angewandten Forschung E.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer- Gesellschaft Zur Förderung Der Angewandten Forschung E.V. filed Critical Fraunhofer- Gesellschaft Zur Förderung Der Angewandten Forschung E.V.
Priority to EP09777120A priority Critical patent/EP2301077A2/de
Priority to JP2011517786A priority patent/JP2011528174A/ja
Priority to US13/054,661 priority patent/US20110139241A1/en
Publication of WO2010015310A2 publication Critical patent/WO2010015310A2/de
Publication of WO2010015310A3 publication Critical patent/WO2010015310A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Die Erfindung betrifft eine Solarzelle und ein Verfahren zur Herstellung dieser Solarzelle. Die Solarzelle umfasst ein Halbleitersubstrat mit dotierten Bereichen (2a, 2b). Auf einer Seite des Halbleitersubstrats befinden sich Kontaktstrukturen (3b, 3c), die mit den dotierten Bereichen (2a, 2b) verbunden sind, und Verbindungsstrukturen (4a, 4b), die übereinander angeordnet sind. Die Verbindungsstrukturen (4a, 4b) sind durch Öffnungen (9) in einer zwischenliegenden Isolierungsschicht (5) mit den Kontaktstrukturen (3b, 3c) verbunden.
PCT/EP2009/005040 2008-07-17 2009-07-10 Solarzelle und verfahren zur herstellung einer solarzelle WO2010015310A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP09777120A EP2301077A2 (de) 2008-07-17 2009-07-10 Solarzelle und verfahren zur herstellung einer solarzelle
JP2011517786A JP2011528174A (ja) 2008-07-17 2009-07-10 太陽電池および太陽電池製造方法
US13/054,661 US20110139241A1 (en) 2008-07-17 2009-07-10 Solar cell and method for producing a solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008033632.7 2008-07-17
DE102008033632A DE102008033632B4 (de) 2008-07-17 2008-07-17 Solarzelle und Solarzellenmodul

Publications (2)

Publication Number Publication Date
WO2010015310A2 WO2010015310A2 (de) 2010-02-11
WO2010015310A3 true WO2010015310A3 (de) 2010-06-17

Family

ID=41401847

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/005040 WO2010015310A2 (de) 2008-07-17 2009-07-10 Solarzelle und verfahren zur herstellung einer solarzelle

Country Status (5)

Country Link
US (1) US20110139241A1 (de)
EP (1) EP2301077A2 (de)
JP (1) JP2011528174A (de)
DE (1) DE102008033632B4 (de)
WO (1) WO2010015310A2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008038184A1 (de) * 2008-08-19 2010-02-25 Suss Microtec Test Systems Gmbh Verfahren und Vorrichtung zur temporären elektrischen Kontaktierung einer Solarzelle
US20130000715A1 (en) * 2011-03-28 2013-01-03 Solexel, Inc. Active backplane for thin silicon solar cells
US8829329B2 (en) * 2010-08-18 2014-09-09 International Business Machines Corporation Solar cell and battery 3D integration
TWI492392B (zh) * 2010-08-27 2015-07-11 Ind Tech Res Inst 半導體元件模組封裝結構及其串接方式
DE102011002726A1 (de) * 2011-01-14 2012-07-19 Robert Bosch Gmbh Verfahren zur Herstellung einer Solarzelle
EP2691990A4 (de) * 2011-03-28 2014-09-03 Solexel Inc Aktive rückwand für dünne silicium-solarzellen
US9153713B2 (en) 2011-04-02 2015-10-06 Csi Cells Co., Ltd Solar cell modules and methods of manufacturing the same
US8916410B2 (en) 2011-05-27 2014-12-23 Csi Cells Co., Ltd Methods of manufacturing light to current converter devices
US20130213469A1 (en) * 2011-08-05 2013-08-22 Solexel, Inc. High efficiency solar cell structures and manufacturing methods
US8692111B2 (en) * 2011-08-23 2014-04-08 Sunpower Corporation High throughput laser ablation processes and structures for forming contact holes in solar cells
DE102013200681A1 (de) * 2013-01-17 2014-07-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Referenzsolarzellenanordnung
JP6034747B2 (ja) * 2013-02-21 2016-11-30 株式会社東芝 半導体装置およびその製造方法
US10553738B2 (en) * 2013-08-21 2020-02-04 Sunpower Corporation Interconnection of solar cells in a solar cell module
US20150207002A1 (en) * 2013-08-30 2015-07-23 Solexel, Inc. Monolithic solar cell arrays and fabrication methods

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234352A (en) * 1978-07-26 1980-11-18 Electric Power Research Institute, Inc. Thermophotovoltaic converter and cell for use therein
US6423568B1 (en) * 1999-12-30 2002-07-23 Sunpower Corporation Method of fabricating a silicon solar cell
US20050172996A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Contact fabrication of emitter wrap-through back contact silicon solar cells

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590327A (en) * 1984-09-24 1986-05-20 Energy Conversion Devices, Inc. Photovoltaic device and method
US5053058A (en) 1989-12-29 1991-10-01 Uop Control process and apparatus for membrane separation systems
US5468652A (en) 1993-07-14 1995-11-21 Sandia Corporation Method of making a back contacted solar cell
EP0881694A1 (de) 1997-05-30 1998-12-02 Interuniversitair Micro-Elektronica Centrum Vzw Solarzelle und Verfahren zu ihrer Herstellung
US6274402B1 (en) * 1999-12-30 2001-08-14 Sunpower Corporation Method of fabricating a silicon solar cell
JP2004095669A (ja) * 2002-08-29 2004-03-25 Toyota Motor Corp 光電変換素子
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
JP4467337B2 (ja) * 2004-03-15 2010-05-26 シャープ株式会社 太陽電池モジュール
DE102004050269A1 (de) * 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle
WO2006123938A1 (en) * 2005-05-19 2006-11-23 Renewable Energy Corporation Asa Method for interconnection of solar cells

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234352A (en) * 1978-07-26 1980-11-18 Electric Power Research Institute, Inc. Thermophotovoltaic converter and cell for use therein
US6423568B1 (en) * 1999-12-30 2002-07-23 Sunpower Corporation Method of fabricating a silicon solar cell
US20050172996A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Contact fabrication of emitter wrap-through back contact silicon solar cells

Also Published As

Publication number Publication date
DE102008033632A1 (de) 2010-01-21
DE102008033632B4 (de) 2012-06-14
WO2010015310A2 (de) 2010-02-11
EP2301077A2 (de) 2011-03-30
JP2011528174A (ja) 2011-11-10
US20110139241A1 (en) 2011-06-16

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