WO2010018961A3 - 태양전지 및 그 제조방법 - Google Patents

태양전지 및 그 제조방법 Download PDF

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Publication number
WO2010018961A3
WO2010018961A3 PCT/KR2009/004451 KR2009004451W WO2010018961A3 WO 2010018961 A3 WO2010018961 A3 WO 2010018961A3 KR 2009004451 W KR2009004451 W KR 2009004451W WO 2010018961 A3 WO2010018961 A3 WO 2010018961A3
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WO
WIPO (PCT)
Prior art keywords
solar cell
photoelectric element
manufacturing same
polycrystalline
substrate
Prior art date
Application number
PCT/KR2009/004451
Other languages
English (en)
French (fr)
Other versions
WO2010018961A2 (ko
Inventor
이유진
장인구
김동제
장석필
이영호
이병일
장택용
Original Assignee
주식회사 티지솔라
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020080078659A external-priority patent/KR101002700B1/ko
Priority claimed from KR1020080083461A external-priority patent/KR101011222B1/ko
Priority claimed from KR1020080084158A external-priority patent/KR101011228B1/ko
Application filed by 주식회사 티지솔라 filed Critical 주식회사 티지솔라
Priority to EP09806823A priority Critical patent/EP2315262A2/en
Priority to CN2009801312224A priority patent/CN102119448A/zh
Priority to JP2011522901A priority patent/JP2011530830A/ja
Priority to US13/058,515 priority patent/US20110139216A1/en
Publication of WO2010018961A2 publication Critical patent/WO2010018961A2/ko
Publication of WO2010018961A3 publication Critical patent/WO2010018961A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

태양전지 및 그 제조방법이 개시된다. 본 발명에 따른 태양전지는 기판(100); 기판(100) 상에 형성되는 하부전극(111a); 하부전극(111a) 상에 형성되며 다수개의 다결정 반도체층(211a, 212a, 213a)이 적층된 다결정 광전소자(210)와, 다결정 광전소자(210) 상에 형성되며 다수개의 비정질 반도체층(221, 222, 223)이 적층된 비정질 광전소자(220)를 포함하는 광전소자부(200a); 및 광전소자부(200a) 상에 형성되는 상부전극(400)을 포함하는 것을 특징으로 한다.
PCT/KR2009/004451 2008-08-11 2009-08-10 태양전지 및 그 제조방법 WO2010018961A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP09806823A EP2315262A2 (en) 2008-08-11 2009-08-10 Solar cell and method for manufacturing same
CN2009801312224A CN102119448A (zh) 2008-08-11 2009-08-10 太阳能电池及其制造方法
JP2011522901A JP2011530830A (ja) 2008-08-11 2009-08-10 太陽電池及びその製造方法
US13/058,515 US20110139216A1 (en) 2008-08-11 2009-08-10 Solar cell and method for manufacturing same

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR1020080078659A KR101002700B1 (ko) 2008-08-11 2008-08-11 태양전지 및 그 제조방법
KR10-2008-0078659 2008-08-11
KR10-2008-0083461 2008-08-26
KR1020080083461A KR101011222B1 (ko) 2008-08-26 2008-08-26 태양전지 및 그 제조방법
KR10-2008-0084158 2008-08-27
KR1020080084158A KR101011228B1 (ko) 2008-08-27 2008-08-27 태양전지 및 그 제조방법

Publications (2)

Publication Number Publication Date
WO2010018961A2 WO2010018961A2 (ko) 2010-02-18
WO2010018961A3 true WO2010018961A3 (ko) 2010-05-27

Family

ID=41669454

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/004451 WO2010018961A2 (ko) 2008-08-11 2009-08-10 태양전지 및 그 제조방법

Country Status (6)

Country Link
US (1) US20110139216A1 (ko)
EP (1) EP2315262A2 (ko)
JP (1) JP2011530830A (ko)
CN (1) CN102119448A (ko)
TW (1) TW201017900A (ko)
WO (1) WO2010018961A2 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101420773B1 (ko) * 2009-07-15 2014-07-17 주성엔지니어링(주) 전기광학소자 및 이의 제작 방법
TWI423456B (zh) * 2010-07-27 2014-01-11 Au Optronics Corp 光電轉換元件
US8088990B1 (en) * 2011-05-27 2012-01-03 Auria Solar Co., Ltd. Color building-integrated photovoltaic (BIPV) panel
TW201248881A (en) * 2011-05-20 2012-12-01 Axuntek Solar Energy Solar battery module and manufacturing method thereof
CN102255006B (zh) * 2011-08-18 2015-07-22 无锡成敏光伏技术咨询有限公司 一种厚膜太阳能电池的制备方法
TW201314921A (zh) * 2011-09-16 2013-04-01 Axuntek Solar Energy 太陽能電池模組及其製造方法
KR101189309B1 (ko) * 2011-10-11 2012-10-09 엘지이노텍 주식회사 태양전지 및 태양전지 모듈
TW201318191A (zh) * 2011-10-25 2013-05-01 Axuntek Solar Energy 可撓式太陽能電池模組及其製造方法
US8907385B2 (en) * 2012-12-27 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Surface treatment for BSI image sensors
CN103730519B (zh) * 2013-12-19 2017-04-26 北京汉能创昱科技有限公司 一种柔性薄膜太阳能电池组件及其制作方法
US9425337B2 (en) * 2014-05-29 2016-08-23 Sunpower Corporation In-cell bypass diode
CN104362220A (zh) * 2014-11-13 2015-02-18 京东方科技集团股份有限公司 一种薄膜太阳能电池的制作方法及薄膜太阳能电池
GB2575792B (en) * 2018-07-20 2021-11-03 Dyson Technology Ltd Stack for an energy storage device
GB2575791B (en) * 2018-07-20 2021-11-03 Dyson Technology Ltd Energy storage device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930011356B1 (ko) * 1988-12-23 1993-11-30 삼성전자 주식회사 비정질실리콘 태양전지 및 그 제조방법
JP2001274446A (ja) * 2000-03-23 2001-10-05 Kanegafuchi Chem Ind Co Ltd 集積型ハイブリッド薄膜太陽電池の製造方法
JP2002076401A (ja) * 2000-08-30 2002-03-15 Kanegafuchi Chem Ind Co Ltd ハイブリッド太陽電池の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
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US4342044A (en) * 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
US6632993B2 (en) * 2000-10-05 2003-10-14 Kaneka Corporation Photovoltaic module

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930011356B1 (ko) * 1988-12-23 1993-11-30 삼성전자 주식회사 비정질실리콘 태양전지 및 그 제조방법
JP2001274446A (ja) * 2000-03-23 2001-10-05 Kanegafuchi Chem Ind Co Ltd 集積型ハイブリッド薄膜太陽電池の製造方法
JP2002076401A (ja) * 2000-08-30 2002-03-15 Kanegafuchi Chem Ind Co Ltd ハイブリッド太陽電池の製造方法

Also Published As

Publication number Publication date
TW201017900A (en) 2010-05-01
WO2010018961A2 (ko) 2010-02-18
CN102119448A (zh) 2011-07-06
EP2315262A2 (en) 2011-04-27
US20110139216A1 (en) 2011-06-16
JP2011530830A (ja) 2011-12-22

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