WO2011091959A8 - Verfahren zur lokalen hochdotierung und kontaktierung einer halbleiterstruktur, welche eine solarzelle oder eine vorstufe einer solarzelle ist - Google Patents

Verfahren zur lokalen hochdotierung und kontaktierung einer halbleiterstruktur, welche eine solarzelle oder eine vorstufe einer solarzelle ist Download PDF

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Publication number
WO2011091959A8
WO2011091959A8 PCT/EP2011/000180 EP2011000180W WO2011091959A8 WO 2011091959 A8 WO2011091959 A8 WO 2011091959A8 EP 2011000180 W EP2011000180 W EP 2011000180W WO 2011091959 A8 WO2011091959 A8 WO 2011091959A8
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
contacting
doping
precursor
semiconductor substrate
Prior art date
Application number
PCT/EP2011/000180
Other languages
English (en)
French (fr)
Other versions
WO2011091959A2 (de
WO2011091959A3 (de
Inventor
Dominik Suwito
Jan Benick
Ulrich JÄGER
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Albert-Ludwigs-Universität Freiburg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., Albert-Ludwigs-Universität Freiburg filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority to EP11701006A priority Critical patent/EP2529405A2/de
Priority to CN201180007543.0A priority patent/CN102893404B/zh
Priority to SG2012055737A priority patent/SG182762A1/en
Priority to US13/575,446 priority patent/US8900908B2/en
Publication of WO2011091959A2 publication Critical patent/WO2011091959A2/de
Publication of WO2011091959A3 publication Critical patent/WO2011091959A3/de
Publication of WO2011091959A8 publication Critical patent/WO2011091959A8/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/061—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being of the point-contact type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur lokalen Hochdotierung und Kontaktierung einer Halbleiterstruktur, welche eine Solarzelle oder eine Vorstufe einer Solarzelle ist und ein Silizium-Halbleitersubstrat (1) eines Basisdotierungstyps umfasst, wobei die Hochdotierung und Kontaktierung erfolgt durch Erzeugen mehrerer lokaler Hochdotierungsbereiche des Basisdotierungstyps in dem Halbleitersubstrat (1) an einer Kontaktierungsseite (1a) des Halbleitersubstrates und Aufbringen einer metallischen Kontaktierungsschicht (7) auf die Kontaktierungsseite (1a) oder gegebenenfalls eine oder mehrere die Kontaktierungsseite (1a) ganz oder teilweise bedeckende Zwischenschichten, zur Ausbildung elektrisch leitender Verbindungen zwischen der metallischen Kontaktierungsschicht (7) und dem Halbleitersubstrat (1) an den Hochdotierungsbereichen.
PCT/EP2011/000180 2010-01-29 2011-01-18 Verfahren zur lokalen hochdotierung und kontaktierung einer halbleiterstruktur, welche eine solarzelle oder eine vorstufe einer solarzelle ist WO2011091959A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP11701006A EP2529405A2 (de) 2010-01-29 2011-01-18 Verfahren zur lokalen hochdotierung und kontaktierung einer halbleiterstruktur, welche eine solarzelle oder eine vorstufe einer solarzelle ist
CN201180007543.0A CN102893404B (zh) 2010-01-29 2011-01-18 用于局部高掺杂和接通是太阳能电池或太阳能电池前体的半导体结构的方法
SG2012055737A SG182762A1 (en) 2010-01-29 2011-01-18 Method for local high-doping and contacting of a semiconductor structure which comprises a solar cell or a precursor of a solar cell
US13/575,446 US8900908B2 (en) 2010-01-29 2011-01-18 Method for local high-doping and contacting of a semiconductor structure which comprises a solar cell or a precursor of a solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010006315A DE102010006315B4 (de) 2010-01-29 2010-01-29 Verfahren zur lokalen Hochdotierung und Kontaktierung einer Halbleiterstruktur, welche eine Solarzelle oder eine Vorstufe einer Solarzelle ist
DE102010006315.0 2010-01-29

Publications (3)

Publication Number Publication Date
WO2011091959A2 WO2011091959A2 (de) 2011-08-04
WO2011091959A3 WO2011091959A3 (de) 2012-07-05
WO2011091959A8 true WO2011091959A8 (de) 2012-09-07

Family

ID=44315968

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/000180 WO2011091959A2 (de) 2010-01-29 2011-01-18 Verfahren zur lokalen hochdotierung und kontaktierung einer halbleiterstruktur, welche eine solarzelle oder eine vorstufe einer solarzelle ist

Country Status (7)

Country Link
US (1) US8900908B2 (de)
EP (1) EP2529405A2 (de)
CN (1) CN102893404B (de)
DE (1) DE102010006315B4 (de)
MY (1) MY157451A (de)
SG (1) SG182762A1 (de)
WO (1) WO2011091959A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010024308A1 (de) * 2010-06-18 2011-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erzeugung einer selektiven Dotierstruktur in einem Halbleitersubstrat zur Herstellung einer photovoltaischen Solarzelle
DE102012203445A1 (de) * 2012-03-05 2013-09-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Erzeugen eines Dotierbereiches in einer Halbleiterschicht
CN104752562A (zh) * 2015-03-17 2015-07-01 晶澳（扬州）太阳能科技有限公司 一种局部硼背场背钝化太阳能电池的制备方法
NL2017872B1 (en) * 2016-11-25 2018-06-08 Stichting Energieonderzoek Centrum Nederland Photovoltaic cell with passivating contact
CN106784047A (zh) * 2016-12-30 2017-05-31 苏州阿特斯阳光电力科技有限公司 一种局部掺杂晶体硅太阳能电池的制备方法及其制得的电池
CN108447918A (zh) * 2018-03-29 2018-08-24 晶澳（扬州）太阳能科技有限公司 一种钝化接触多晶硅薄膜的掺杂结构及其制备方法
CN110148636A (zh) * 2018-11-27 2019-08-20 晶澳（扬州）太阳能科技有限公司 一种太阳能电池及其制备方法、光伏组件
DE102019111061A1 (de) * 2019-04-29 2020-10-29 Meyer Burger (Germany) Gmbh Herstellungsverfahren von Silizium-Heterojunction-Solarzellen mit Stabilisierungsschritt und Fertigungslinienabschnitt für den Stabilisierungsschritt
CN112736150B (zh) * 2021-01-07 2022-08-19 中国科学院深圳先进技术研究院 一种铜铟镓硒薄膜太阳能电池及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPP437598A0 (en) * 1998-06-29 1998-07-23 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell
JP3490964B2 (ja) * 2000-09-05 2004-01-26 三洋電機株式会社 光起電力装置
DE10046170A1 (de) * 2000-09-19 2002-04-04 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht
AU2007346834A1 (en) * 2007-02-08 2008-08-21 Wuxi Suntech-Power Co., Ltd. Hybrid silicon solar cells and method of fabricating same
EP1993142A1 (de) 2007-05-14 2008-11-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Reflektiv beschichtetes Halbleiterbauelement, Verfahren zu dessen Herstellung sowie dessen Verwendung
EP1993143A1 (de) * 2007-05-14 2008-11-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement, Verfahren zu dessen Herstellung und dessen Verwendung
US7763535B2 (en) * 2007-08-30 2010-07-27 Applied Materials, Inc. Method for producing a metal backside contact of a semiconductor component, in particular, a solar cell

Also Published As

Publication number Publication date
CN102893404B (zh) 2015-11-25
US20120301995A1 (en) 2012-11-29
US8900908B2 (en) 2014-12-02
EP2529405A2 (de) 2012-12-05
CN102893404A (zh) 2013-01-23
SG182762A1 (en) 2012-08-30
WO2011091959A2 (de) 2011-08-04
WO2011091959A3 (de) 2012-07-05
MY157451A (en) 2016-06-15
DE102010006315B4 (de) 2012-08-30
DE102010006315A1 (de) 2011-08-04

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