WO2008028625A3 - Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung - Google Patents

Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung Download PDF

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Publication number
WO2008028625A3
WO2008028625A3 PCT/EP2007/007703 EP2007007703W WO2008028625A3 WO 2008028625 A3 WO2008028625 A3 WO 2008028625A3 EP 2007007703 W EP2007007703 W EP 2007007703W WO 2008028625 A3 WO2008028625 A3 WO 2008028625A3
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WO
WIPO (PCT)
Prior art keywords
semiconductor substrates
simultaneously doping
oxidizing semiconductor
oxidizing
doping
Prior art date
Application number
PCT/EP2007/007703
Other languages
English (en)
French (fr)
Other versions
WO2008028625A2 (de
Inventor
Daniel Biro
Ralf Preu
Jochen Rentsch
Original Assignee
Fraunhofer Ges Forschung
Daniel Biro
Ralf Preu
Jochen Rentsch
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Ges Forschung, Daniel Biro, Ralf Preu, Jochen Rentsch filed Critical Fraunhofer Ges Forschung
Priority to EP07802115A priority Critical patent/EP2064750A2/de
Priority to US12/439,964 priority patent/US20100136768A1/en
Priority to JP2009525991A priority patent/JP2010503190A/ja
Publication of WO2008028625A2 publication Critical patent/WO2008028625A2/de
Publication of WO2008028625A3 publication Critical patent/WO2008028625A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten sowie derart hergestellte dotierte und oxidierte Halbleitersubstrate. Weiterhin betrifft die Erfindung die Verwendung dieses Verfahrens zur Herstellung von Solarzellen.
PCT/EP2007/007703 2006-09-04 2007-09-04 Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung WO2008028625A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP07802115A EP2064750A2 (de) 2006-09-04 2007-09-04 Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung
US12/439,964 US20100136768A1 (en) 2006-09-04 2007-09-04 Method for simultaneous doping and oxidizing semiconductor substrates and the use thereof
JP2009525991A JP2010503190A (ja) 2006-09-04 2007-09-04 半導体基板に対して同時にドーピングおよび酸化を実行する方法および当該方法の利用

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006041424.1 2006-09-04
DE102006041424A DE102006041424A1 (de) 2006-09-04 2006-09-04 Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung

Publications (2)

Publication Number Publication Date
WO2008028625A2 WO2008028625A2 (de) 2008-03-13
WO2008028625A3 true WO2008028625A3 (de) 2008-05-08

Family

ID=39078879

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2007/007703 WO2008028625A2 (de) 2006-09-04 2007-09-04 Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung

Country Status (5)

Country Link
US (1) US20100136768A1 (de)
EP (1) EP2064750A2 (de)
JP (1) JP2010503190A (de)
DE (1) DE102006041424A1 (de)
WO (1) WO2008028625A2 (de)

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DE102008049281A1 (de) * 2008-09-26 2010-04-08 Centrotherm Photovoltaics Technology Gmbh Diffusionseinrichtung für die Solarzellenfertigung und Verfahren zur Herstellung von Solarzellen
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KR20110086833A (ko) * 2008-10-23 2011-08-01 어플라이드 머티어리얼스, 인코포레이티드 반도체 소자 제조 방법, 반도체 소자 및 반도체 소자 제조 설비
US8124502B2 (en) * 2008-10-23 2012-02-28 Applied Materials, Inc. Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
DE102009005168A1 (de) * 2009-01-14 2010-07-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Verfahren zur Herstellung einer Solarzelle aus einem Siliziumsubstrat
DE102009003393A1 (de) * 2009-01-27 2010-07-29 Schott Solar Ag Verfahren zur Temperaturbehandlung von Halbleiterbauelementen
EP2422373B1 (de) * 2009-04-21 2024-06-05 Tetrasun, Inc. Herstellungsverfahren von hochleistungssolarzellenstrukturen
CN104882513A (zh) * 2009-04-22 2015-09-02 泰特拉桑有限公司 通过局部激光辅助转变太阳能电池中的功能膜得到的局部金属接触
US8450141B2 (en) * 2009-06-17 2013-05-28 University Of Delaware Processes for fabricating all-back-contact heterojunction photovoltaic cells
DE102010004498A1 (de) * 2010-01-12 2011-07-14 centrotherm photovoltaics AG, 89143 Verfahren zur Ausbildung einer zweistufigen Dotierung in einem Halbleitersubstrat
JP5778247B2 (ja) 2010-03-26 2015-09-16 テトラサン インコーポレイテッド 高効率結晶太陽電池における遮蔽された電気接点およびパッシベーション化誘電体層を通じたドーピング、ならびにその構造および製造方法
CN102939662B (zh) * 2010-05-20 2016-03-23 京瓷株式会社 太阳能电池元件及其制造方法、以及太阳能电池模块
KR101150686B1 (ko) 2010-12-17 2012-05-25 현대중공업 주식회사 태양전지 및 그 제조방법
DE102011103538A1 (de) * 2011-06-07 2012-12-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat und Verwendung
CN102751379A (zh) * 2012-06-20 2012-10-24 常州天合光能有限公司 一种在n型硅衬底上快速形成p-n结的方法
US10014425B2 (en) 2012-09-28 2018-07-03 Sunpower Corporation Spacer formation in a solar cell using oxygen ion implantation
US9093598B2 (en) * 2013-04-12 2015-07-28 Btu International, Inc. Method of in-line diffusion for solar cells
US20140361407A1 (en) * 2013-06-05 2014-12-11 SCHMID Group Silicon material substrate doping method, structure and applications
JP6456279B2 (ja) * 2015-01-29 2019-01-23 三菱電機株式会社 太陽電池の製造方法
FR3035741B1 (fr) * 2015-04-28 2018-03-02 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'une cellule photovoltaique.
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Also Published As

Publication number Publication date
EP2064750A2 (de) 2009-06-03
WO2008028625A2 (de) 2008-03-13
DE102006041424A1 (de) 2008-03-20
JP2010503190A (ja) 2010-01-28
US20100136768A1 (en) 2010-06-03

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