CN100401532C - 太阳能电池及其制造方法 - Google Patents

太阳能电池及其制造方法 Download PDF

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CN100401532C
CN100401532C CNB028233891A CN02823389A CN100401532C CN 100401532 C CN100401532 C CN 100401532C CN B028233891 A CNB028233891 A CN B028233891A CN 02823389 A CN02823389 A CN 02823389A CN 100401532 C CN100401532 C CN 100401532C
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阿道夫·闵采尔
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Abstract

一种太阳能电池(1)包括具有基本掺杂、接收光正面(4)和背面(6)的硅晶片(3)，其设置有叉指状半导体图案，该叉指状半导体图案包括至少一个具有第一掺杂第一扩散区(9)的第一图案和至少一个第二掺杂区(10)的第二图案，第二扩散区(10)与第一扩散区(9)分离并具有与第一掺杂不同的第二掺杂，其中沿着从背面(6)延伸进到硅晶片(3)中的至少一个沟槽(12)的侧面布置每个第二扩散区(10)。

Description

太阳能电池及其制造方法
技术领域
本发明涉及带背面触点的太阳能电池的制造方法。
背景技术
太阳能电池包括具有接收光的正面和背面的硅晶片。硅晶片设置有基本掺杂，其中基本掺杂可以为n型或p型。太阳能电池通常在接收光的正面上和背面上设置有金属触点来运走太阳能电池生成的电流。由于金属覆盖引起太阳能电池有效面积的遮蔽，特别是在接收光的背面上的金属触点产成了关于效率程度的问题。虽然最优化了金属覆盖来减小遮蔽，由于必须以保持电损耗很小的方式发生金属化，大约10％的金属覆盖仍是不可避免的。但是，对于背面上的金属触点，不会发生遮蔽的风险，对于接触必须实现电损耗和在背面应用金属触点成本之间的最优化。
存在在太阳能电池的背面上设置有两个触点的太阳能电池，从而通过金属触点不遮蔽太阳能电池。在国际专利申请公报No.02/23639中给出了这种电池的实例。但是，制造这种仅在背面上带触点的太阳能电池是非常复杂的，其包括多个掩模、蚀刻和清洗工艺步骤。而且，必须准确地对准金属化结构。制造带背面触点的太阳能电池的较大成本阻碍了这些更有效太阳能电池的大规模应用。
US5665607公开了一种制造薄膜太阳能电池的方法。由于硅层沉积在一基板上，而随后该基板要与硅层分离。要穿透该硅层蚀刻出数个孔以使得可以蚀刻掉在基板和硅层之间的中间层。按照该方法制出的太阳能电池的性能不令人满意。
发明内容
本发明的一个目的是提供一种机械上坚固的带背面触点的太阳能电池，其中减小了电荷载流子的再复合。发明的又一目的是提供一种带背面触点的太阳能电池，与公知的电池相比，其能够以更成本有效的方法被同样可靠地制造。
为了这个目标，按照本发明的太阳能电池包括具有接收光正面和背面的硅晶片，其中，硅晶片具有原始厚度，硅晶片还具有基本掺杂，在硅晶片背面设置有叉指状半导体图案，该叉指状半导体图案包括至少一个具有第一掺杂的第一扩散区的第一图案和至少一个第二扩散区的第二图案，第二扩散区与第一扩散区分离并具有与第一掺杂不同的第二掺杂，其中沿着从背面延伸进到硅晶片中的至少一个沟槽的侧面布置每个第二扩散区，其中，硅晶片在所述至少一个沟槽的位置处的厚度比硅晶片在所述至少一个第一扩散区的位置处的原始厚度小。
为了运走太阳能电池生成的电流，叉指状半导体图案设置有叉指状接触结构。
发明还涉及一种太阳能电池的制造方法，该方法包括提供具有原始厚度并具有接收光正面和带基本掺杂背面的硅晶片，和提供在其背面带叉指状半导体图案的硅晶片，其中提供叉指状半导体图案包括步骤：
(a)于背面运用包含第一掺杂剂的掺杂膏以获得至少一个用掺杂膏覆盖区的图案；
(b)干燥掺杂膏；
(c)通过在无氧气氛升高温度下迫使第一掺杂剂扩散到硅晶片中生成至少一个具有第一掺杂的第一扩散区的图案，并同时生成氧化硅层；
(d)通过在第一扩散区之间的区中运用第一蚀刻剂蚀刻部分氧化硅层，并除去第一蚀刻剂和蚀刻的氧化硅层获得氧化硅边框图案；
(e)通过在氧化硅边框之间运用第二蚀刻剂蚀刻部分硅晶片，并除去第二蚀刻剂和蚀刻的硅获得至少一个沟槽的图案，其中，硅晶片在所述至少一个沟槽的位置处的厚度比硅晶片在所述至少一个第一扩散区的位置处的原始厚度小；
(f)在至少一个沟槽每个的侧面上生成具有第二掺杂的第二扩散区，其中第二掺杂与第一掺杂不同；和
(g)除去掺杂膏和氧化硅层的剩余部分获得叉指状半导体图案。
为了制造能够运走太阳能电池生成电流的太阳能电池，该方法还包括提供带叉指状接触结构的叉指状半导体图案，其包括在硅晶片和扩散区的表面上运用钝化层；在钝化层上运用金属化层，其中每个金属化层沿着扩散区延伸；和通过培烧金属化层生成电触点。
由于膏能够通过丝网印刷运用于太阳能电池的硅晶片，发明可以对扩散区结构上创新。由此，因为通过以相当简单方式的膏结构应用能够实现太阳能电池的各个区的准确对准，通过简单、可靠再生和成本有效的方式能够形成太阳能电池制造所必须的任何结构。
通过在制造太阳能电池硅晶片中的扩散区中应用丝网可印刷掺杂和/或蚀刻膏，能够以简单和成本有效的方式制造带背面触点的太阳能电池。能够使用用于制造第一扩散区和蚀刻氧化硅层的丝网设计作为用于运用金属化层的丝网。由此，发明除去了与目前用于制造这种类型太阳能电池所需工艺步骤有关的经济缺陷。
通过适当调协工艺步骤，能够找到用于制造带背面触点太阳能电池的特别成本有效的方法。
附图说明
现在将通过根据参照附图的该示例实施例的实例更详细地介绍发明，其中：
图1示意而非按比例地示出按照本发明太阳能电池的部分剖面；和
图2至8示意示出按照本发明制造太阳能电池的工艺步骤。
具体实施方式
现在参照图1，图1示意而非按比例地示出按照本发明太阳能电池1的部分剖面图。
太阳能电池1包括具有接收光正面4和背面6的硅晶片3。硅晶片3具有基本掺杂，在该例中为p型掺杂。
在背面6，硅晶片3设置有叉指状半导体图案，该叉指状半导体图案包括至少一个具有第一掺杂的第一扩散区9的第一图案和至少一个第二扩散区10的第二图案。第二扩散区10与第一扩散区9分离，且它们具有与第一掺杂不同的第二掺杂。沿着至少一个从背面6延伸到硅晶片3中的沟槽12的侧面布置每个第二扩散区10。适当数量的沟槽为晶片每厘米宽度从1到100个沟槽的范围，沟槽的宽度适于从0.05到5毫米的范围，邻近沟槽之间的边框宽度也为从0.05到5毫米的范围。沟槽适于彼此平行。
叉指状半导体结构适于设置有叉指状接触结构，其中第一扩散区9设置有第一接触结构13，第二扩散区10设置有第二接触结构14以在正常工作期间能够运走太阳能电池生成的电流。叉指状接触结构形成背面触点。
第一扩散区9的第一掺杂适于与硅晶片3的基本掺杂为同一类型。因此，第二扩散区10的掺杂与基本掺杂不同。
按照本发明的太阳能电池的优点在于在沟槽12位置(薄晶片部分)硅晶片3的厚度比在第一扩散区9位置硅晶片3的原始厚度薄。由此，在适于具有与基本掺杂不同掺杂的第二扩散区10的位置，厚度很薄，其降低了载流子复合的可能性。在第一扩散区的位置厚度很大以向本发明的太阳能电池1提供机械强度。
沟槽12延伸进到硅晶片3中形成薄晶片部分，其中薄晶片部分的厚度适于在硅晶片3厚度的30到60％之间或在50到150微米之间的范围，无论哪个是最小的。
正面4适于设置有抗反射涂层15，在接触结构13和14之间的背面设置有抗反射涂层17。抗反射涂层15和17还用作钝化硅晶片3的表面。用于抗反射涂层适当的材料是氧化硅和氮化硅或氧化硅和氮化硅的混合物。
为了在不同类型的扩散区之间提供充分的电绝缘，在第一和第二扩散区9和10之间的分离尺寸18大于第二扩散区10的厚度，并大于第一和第二扩散区9和10的厚度和。
现在将参照图2至8论述按照本发明制造太阳能电池的方法。已参照附图1论述的特征将具有相同的参考标号。
如用其它制造工艺的，用于制造按照发明带背面触点的太阳能电池的起始点为带适当p型或n型基本掺杂的锯开硅晶片3。根据太阳能电池设计能够自由地选择硅晶片3的厚度。锯开步骤能损伤表面层，这种损伤通过蚀刻除去。根据太阳能电池设计，随之可以附加预备工艺步骤，例如如德国专利申请公开No.19811878中介绍的那样使硅晶片3承受织构蚀刻的工艺步骤。
硅晶片3具有接收光的正面4和背面6。提供带叉指状半导体图案硅晶片3的背面6的第一步骤包括于背面6运用包含第一掺杂剂的掺杂膏20以获得至少一个由掺杂膏20(见图2)覆盖区的图案。适于通过丝网印刷方法运用掺杂膏20。
随后干燥掺杂膏20。
现在参照图3。下一个步骤是通过在升高温度无氧气氛下强使第一掺杂剂从掺杂膏20扩散进到硅晶片3生成至少一个具有第一掺杂第一扩散区9的图案，同时在接收光的正面4和背面6生成氧化硅层21和22。
第一掺杂剂可以是硼、铝、镓或铟，以获得p掺杂的第一扩散区9，或者可以是磷、砷或锑以获得n掺杂的第一扩散区9。升高的温度适宜为800℃和1200℃之间(例如当掺杂剂为硼时在900℃到1200℃之间，当掺杂剂为磷时在800℃到1000℃之间)。
在图4中示出了下一个步骤。该步骤包括通过在第一扩散区9之间的区域中运用蚀刻剂25蚀刻部分氧化硅层22，并除去蚀刻剂25和蚀刻的硅获得氧化硅边框26的图案。蚀刻剂适于为通过丝网印刷方法运用的蚀刻膏，其中活性成分为酸水溶液。
现在将参照图5说明使用氧化硅边框26作为制造沟槽12(见图1)的掩模。在氧化硅边框26之间，运用第二蚀刻剂27。当蚀刻到达所需深度时，除去第二蚀刻剂和蚀刻掉的部分硅晶片3，获得至少一个沟槽12的图案。蚀刻剂适于为选择成不蚀刻掉氧化硅的碱水溶液。
现在参照图6，示出下一步骤的结果。该步骤包括在至少一个沟槽12的每个侧面上生成具有第二掺杂的第二扩散区10，其中第二掺杂与第一掺杂不同。因为在先前步骤中第一扩散区9之间运用了蚀刻剂，在除去蚀刻剂之后，保留氧化硅边框26，这些边框是造成第一和第二扩散区9和10之间间隔18(见图1)的原因。边框26是保护区，其形成用于第二掺杂扩散的掩模。
适于从气相进行第二掺杂剂的扩散，掺杂剂可以是磷或硼。
按照本发明方法的最后步骤是除去掺杂膏20和氧化硅层的边框26，在硅晶片3的背面6获得叉指状半导体图案。除去掺杂膏20和边框26的适当掺杂剂是稀释的氢氟酸。在图7中示出了结果。
叉指状半导体图案包括具有第一掺杂的第一图案第一扩散区9和沿着沟槽12的侧面布置的第二图案第二扩散区10。第二扩散区10与第一扩散区9分离，并且它们具有与第一掺杂不同的第二掺杂。按照发明的工艺优点在于，进行蚀刻步骤以自动建立在扩散区9和10之间的边缘绝缘，从而能够例如通过等离子体蚀刻省略对其必须的附加边缘绝缘步骤。
为了运走在太阳能电池正常工作期间所生成的电流，在叉指状半导体图案上运用金属触点。在该步骤之前，通过运用适当的抗反射涂层(其还用作钝化层)，例如氮化硅、氧化硅或氮化硅和氧化硅的混合物，能够钝化硅晶片3的表面。
正面4和背面6的表面设置有氧化硅材料的抗反射涂层15和17(见图8)。
接着在运用在背面6上的抗反射涂层17上运用金属化层30和31，其中每个金属化层30和31沿着扩散区9和10延伸。随后通过培烧金属化层30和31获得接触结构13和14构成的电触点(见图1)。用于金属化层的膏可以是掺杂的或无掺杂剂。因为扩散区已经提供了欧姆接触，膏适于无掺杂剂。使用无掺杂剂膏具有附加优点，相同的膏用于两层金属化层30和31。
适于通过丝网印刷的方法运用金属化层30，使用与用于提供掺杂膏20的丝网相同设计的丝网。适合于通过丝网印刷的方法运用金属化层31，使用与为运用蚀刻剂25(见图4)而运用的丝网相同设计的丝网。在方法中，随后形成接触结构13和14构成的电触点的区域能够容易地与第一和第二扩散区9和10对准。
作为替换，用于印刷金属化层30和31的丝网设计可以合并成一个，从而能够在一个步骤中丝网印刷两个金属化层。在这种情形中，不同的触点已经相对于彼此对准，因此不存在交叉接触或交叉污染的问题。在替换工艺中所用的金属化膏是无掺杂剂的，从而可以使用相同的膏用于两个金属化层30和31。
硅晶片的基本掺杂可以是p型或n型的，第一扩散区9的掺杂可以是p型或n型的，那么第二扩散区10的掺杂或是n型或是p型的。
第一扩散区的掺杂适于与基本掺杂相同，由此形成具有比硅晶片3大与掺杂有关的载流子浓度。由于它不沿背面6连续，在按照发明的太阳能电池中，相同种类载流子的浓度差称为背表面场。在这种情形中，第二扩散区10的掺杂与基本掺杂不同，在界面形成p-n或n-p结。
根据太阳能电池的设计和其应用，指定在第一与第二扩散区9和10中掺杂剂的不同浓度和穿透深度。
由于在第一与第二扩散区9和10中已经存在的高掺杂，未掺杂膏，例如未掺杂银膏能够用于由接触结构13和14构成的两个金属触点。但是，在不同或不充分掺杂的情形中，可以使用被调整的掺杂金属化膏用于各个区接触。
可以结合按照本发明制造的各个太阳能电池形成太阳能电池组。为了这个目标，通过适当的粘合材料接合邻近电池的背面触点形成串联连接或并联连接。

Claims (10)

1.一种太阳能电池，包括具有接收光正面和背面的硅晶片，其中，硅晶片具有原始厚度，硅晶片还具有基本掺杂，在硅晶片背面设置有叉指状半导体图案，该叉指状半导体图案包括至少一个具有第一掺杂的第一扩散区的第一图案和至少一个第二扩散区的第二图案，第二扩散区与第一扩散区分离并具有与第一掺杂不同的第二掺杂，其中沿着从背面延伸进到硅晶片中的至少一个沟槽的侧面布置每个第二扩散区，其中，硅晶片在所述至少一个沟槽的位置处的厚度比硅晶片在所述至少一个第一扩散区的位置处的原始厚度小。
2.按照权利要求1的太阳能电池，其中叉指状半导体图案设置有叉指状接触结构。
3.按照权利要求1或2的太阳能电池，其中第一掺杂与基本掺杂类型相同。
4.按照权利要求1或2的太阳能电池，其中第一和第二扩散区之间的分离尺寸大于第二扩散区的厚度。
5.按照权利要求1或2的太阳能电池，其中第一和第二扩散区之间的分离尺寸大于第一和第二扩散区的厚度和。
6.一种太阳能电池的制造方法，该方法包括提供具有原始厚度并具有接收光正面和带基本掺杂的背面的硅晶片，以及在硅晶片的背面提供叉指状半导体图案，其中提供叉指状半导体图案包括下列步骤：
(a)于背面施加包含第一掺杂剂的掺杂膏以获得至少一个用掺杂膏覆盖的区的图案；
(b)干燥掺杂膏；
(c)通过在无氧气氛升高温度下迫使第一掺杂剂扩散到硅晶片中来生成至少一个具有第一掺杂的第一扩散区的图案，并同时生成氧化硅层；
(d)通过在第一扩散区之间的区中施加第一蚀刻剂来蚀刻部分氧化硅层，并除去第一蚀刻剂和蚀刻的氧化硅层获得氧化硅边框图案；
(e)通过在氧化硅边框之间施加第二蚀刻剂来蚀刻部分硅晶片，并除去第二蚀刻剂和蚀刻的硅以获得至少一个沟槽的图案，其中，硅晶片在所述至少一个沟槽的位置处的厚度比硅晶片在所述至少一个第一扩散区的位置处的原始厚度小；
(f)在至少一个沟槽中的每个沟槽的侧面上生成具有第二掺杂的第二扩散区，其中第二掺杂与第一掺杂不同；和
(g)除去掺杂膏和氧化硅层的剩余部分以获得叉指状半导体图案。
7.按照权利要求6的方法，该方法还包括为叉指状半导体图案提供叉指状接触结构，其包括在硅晶片和扩散区的表面上施加钝化层；在钝化层上施加金属化层，其中每个金属化层沿着扩散区延伸；和通过培烧金属化层生成电触点。
8.按照权利要求6或7的方法，其中通过丝网印刷方法施加在步骤(a)中的掺杂膏。
9.按照权利要求6或7的方法，其中蚀刻剂是蚀刻膏，其通过丝网印刷方法施加。
10.按照权利要求6或7的方法，其中在从800到1200℃范围的温度进行在步骤(c)中的迫使掺杂剂扩散到硅晶片中。
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US7217883B2 (en) 2007-05-15
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US20050016585A1 (en) 2005-01-27
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