JP5687837B2 - 太陽電池構造体、光起電モジュール及びこれらに対応する方法 - Google Patents
太陽電池構造体、光起電モジュール及びこれらに対応する方法 Download PDFInfo
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- JP5687837B2 JP5687837B2 JP2009549629A JP2009549629A JP5687837B2 JP 5687837 B2 JP5687837 B2 JP 5687837B2 JP 2009549629 A JP2009549629 A JP 2009549629A JP 2009549629 A JP2009549629 A JP 2009549629A JP 5687837 B2 JP5687837 B2 JP 5687837B2
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Classifications
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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Description
一般的に、光起電モジュールは、透明な前面シートと、保護支持体層と、これらの透明な前面シートと保護支持体層との間の太陽電池セルと、を有する。一般的に、太陽電池モジュール内で複数の太陽電池セルが直列に連結されている。光起電力電池セルの半導体構造はシリコン箔であり得るが、本明細書に記載の加工方法は他の半導体材料及び他の形式にも適用可能である。各セルは、セルの二つの極性を有するコレクタのための電極を形成するための複数のドープ領域を一般的に有する。一般的に、太陽電池セルは裏面電極であってもよいが、他の電極構造も他の実施形態において採用可能である。本明細書に記載される構造体からは高いセル性能が期待される。
光起電モジュールに組み込むための適切な材料の例を以下に記載する。透明な前面シートは、例えば、シリカガラス、他の無機ガラス物質、透明な高分子物質、又はこれらの複合物等であってもよい。透明な前面シートは、その一方又は両方の表面に反射防止コーティング又は別のオプティカルコーティングを有することができる。適切なポリマー支持体層には、例えば、デュポン社のTedlar(登録商標)「S」タイプのポリフッ化ビニル膜が含まれる。反射材料に関して、支持体層のためのポリマーシートは、薄い金属膜(例えば金属化されたマイラ(登録商標)ポリエステルフィルム)でコーティングすることができる。透明な前面シートと支持体層を接合する保護シールは、接着剤、天然ゴムもしくは合成ゴム又は他のポリマー等から形成することができる。
本明細書に記載された加工工程は、モジュール内に動的に設計された太陽電池セルを任意に備える、光起電モジュールの加工のために適切かつ効率的なものである。いくつかの実施形態において、太陽電池セルは、半導性シートとしてシリコン薄箔から作るために設計される。一般的に、加工工程のうちの少なくともいくつかは、任意の厚みのシリコンシートを備える光起電力電池セルに適用可能かつ有利であって、また、他の半導体材料から形成されるセルにも適用可能かつ有利である。いくつかの加工工程又は一連の加工工程は、セルから電流を集めるために裏面電極の効率的な形成に特に向けられている。ドーパントは保護層中の孔に配置され、従来よりも少ない工程数で裏面電極セルを形成するためにコレクタ材料の綿密な配置と組み合わされ、かつ、材料の量を減らすと共に性能の改善を約束する所望の構造体を成す。
Claims (15)
- 透明な前面シートと、
前面及びこれに対向する裏面を有する半導体層と、
前記半導体層の裏面から延びる複数の分離されているpドープ・アイランド及び複数の分離されているnドープ・アイランドと、
少なくとも二つの電気相互接続と、
を含む太陽電池セルであって、
前記半導体層は、前記半導体層の前面を前記透明な前面シートに向けて固定されており、一方の電気相互接続が前記複数のpドープ・アイランド間に電気接続を提供し、他方の電気相互接続が前記複数のnドープ・アイランド間に電気接続を提供し、そして
前記ドープ・アイランドが、ドーピングされたシリコン/ゲルマニウム粒子積層物からドーパントが拡散されることによって形成され、ドーピングされたシリコン(Si)/ゲルマニウム(Ge)を含む、ことを特徴とする太陽電池セル。 - 前記半導体層が、5ミクロンから100ミクロンの平均厚さを有するシリコン/ゲルマニウム箔を含むことを特徴とする請求項1に記載の太陽電池セル。
- 前記複数のドープ・アイランドが、裏面誘電性保護層を貫通する開口部に整合されていることを特徴とする請求項1に記載の太陽電池セル。
- 前記裏面誘電性保護層が、酸化ケイ素、窒化ケイ素、酸窒化ケイ素又はこれらの組み合わせを含むことを特徴とする請求項3に記載の太陽電池セル。
- 前面誘電性保護層が、前記半導体層と前記透明な前面シートとの間に位置することを特徴とする請求項1に記載の太陽電池セル。
- 請求項1に記載の太陽電池セルと、
透明素材のシートに沿って複数の付加的な太陽電池セル構造体と、
を含むことを特徴とする光起電モジュール。 - ドーピングされた半導体構造体を形成するための方法であって、
半導体シートの表面に複数の積層物を印刷する工程、
前記印刷工程が、ドーピングされた粒子を含むインクの積層を含み、
前記複数の積層物のうち、いくつかはpドーパントを含んでおり、他の積層物はnドーパントを含んでおり、そして
前記半導体シートにドーパントを導入して、前記半導体シートの前記表面から延びる分離されたドープ・アイランドを形成する工程と、
を含んでおり、
前記ドーピングされた粒子が、シリコン(Si)/ゲルマニウム(Ge)を含むことを特徴とする方法。 - 前記印刷工程が、インクジェット式印刷を含むことを特徴とする請求項7に記載の方法。
- 前記ドーピングされた粒子が、100ナノメートル以下の一次粒子の平均径を有することを特徴とする請求項7に記載の方法。
- ドーパントを導入する工程の後に前記シリコン/ゲルマニウムを除去するためにエッチングを行う工程を更に含むことを特徴とする請求項7に記載の方法。
- 前記半導体シートにドーパントを導入する工程が、
積層物を前記半導体シートの表面上へ放射する工程を更に含んでおり、誘電体カバーが、前記誘導体カバーを通して下層の半導体表面を露出する選択された開口部を備える表面に沿って前記半導体シートに取り付けられ、そして前記放射する工程が、選択されたウィンドウに対応する箇所でなされ、前記選択されたウィンドウに対応する箇所でドープ電極を形成することを特徴とする請求項7に記載の方法。 - 前記放射された積層物の残部を除去するための放射の後に、前記半導体シートを洗浄する工程を更に含むことを特徴とする請求項11に記載の方法。
- 前記インクが、1ミクロン以下の二次粒子の大きさを有することを特徴とする請求項7に記載の方法。
- 前記インクが、0.1mPa・sから100mPa・sの粘度を有することを特徴とする請求項7に記載の方法。
- 前記ドープ・アイランドが、前記半導体シートの表面から100ナノメートル内に95原子パーセントのドーパントを備えるドーパント断面を有することを特徴とする請求項1に記載の太陽電池セル。
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CN101675531A (zh) | 2010-03-17 |
TW200935612A (en) | 2009-08-16 |
US20130056069A1 (en) | 2013-03-07 |
JP2015097287A (ja) | 2015-05-21 |
EP2654089A2 (en) | 2013-10-23 |
JP2010519731A (ja) | 2010-06-03 |
CN103077978B (zh) | 2016-12-28 |
WO2008103293A1 (en) | 2008-08-28 |
EP2122691A4 (en) | 2011-02-16 |
US8409976B2 (en) | 2013-04-02 |
US9343606B2 (en) | 2016-05-17 |
TWI499061B (zh) | 2015-09-01 |
US8853527B2 (en) | 2014-10-07 |
EP2122691A1 (en) | 2009-11-25 |
JP2013168661A (ja) | 2013-08-29 |
US20120227810A1 (en) | 2012-09-13 |
US20080202577A1 (en) | 2008-08-28 |
CN103077978A (zh) | 2013-05-01 |
CN101675531B (zh) | 2013-03-06 |
US20080202576A1 (en) | 2008-08-28 |
EP2654089A3 (en) | 2015-08-12 |
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