JP5710879B2 - シリコン/ゲルマニウムによるナノ粒子インク、ドーピングされた粒子、印刷法、及び半導体用途のためのプロセス - Google Patents
シリコン/ゲルマニウムによるナノ粒子インク、ドーピングされた粒子、印刷法、及び半導体用途のためのプロセス Download PDFInfo
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- JP5710879B2 JP5710879B2 JP2009544910A JP2009544910A JP5710879B2 JP 5710879 B2 JP5710879 B2 JP 5710879B2 JP 2009544910 A JP2009544910 A JP 2009544910A JP 2009544910 A JP2009544910 A JP 2009544910A JP 5710879 B2 JP5710879 B2 JP 5710879B2
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- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
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- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
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- 238000011084 recovery Methods 0.000 description 1
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- AKLJIUURIIIOLU-UHFFFAOYSA-N silane 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound [SiH4].CO[Si](OC)(OC)CCCOC(=O)C(C)=C AKLJIUURIIIOLU-UHFFFAOYSA-N 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
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- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 238000005307 time correlation function Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
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Images
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Description
本出願は、参照によって本明細書に組み込まれる「ドーピングされた分散物及び半導体基板をドーピングするためのプロセス」という標題の2007年1月3日出願の同時係属のヒーズルメア(Hieslmair)らの米国特許仮出願第60/878,239号の優先権を主張する。
本発明は、ドーピングされた粒子などの、シリコン/ゲルマニウム粒子又はシリカ/ゲルマニア粒子の分散物/インクに関する。本発明は、さらに、インクジェット印刷法に適するインクに関する。さらに、本発明は、半導体基板に沿ったドーピングされた構造及び/又はドメインの形成のためのドーピングされたシリコン/ゲルマニウム粒子又はシリカ/ゲルマニア粒子の使用に関する。
本明細書に記載されている望ましい分散物は、一部は、ドーパントの有無にかかわらず高度に均一なシリコン/シリカナノ粒子を形成する能力にもとづいている。レーザー熱分解法は、高度に均一なシリコン/シリカ粒子の合成のための特に適当な手法である。レーザー熱分解法は、所望のドーパントの選ばれた濃度での導入のための汎用性がある手法でもある。所望の分散物を形成するために合成の後に表面特性がさらに操作されることができるが、シリコン/シリカ粒子の表面特性はレーザー熱分解プロセスによって影響を受けることもできる。小さな、かつ均一なシリコン/シリカ粒子は、分散物/インクを形成することに関して加工法の利点を提供することができる。
一般に、サブミクロンのシリコン/シリカ粒子は、別の加工又は使用のために分散される。実施態様によっては、分散物は、シリコン/シリカ粒子を表面改質することによってさらに安定化されることができる。特に興味深い表面改質剤は、粒子表面と化学結合を形成することができる。分散用液体及び粒子表面特性の適切な選択によって、安定な分散物が妥当な濃度で形成されることができる。分散物は、適当な被覆手法によって供給されるか又はインクとして用いられる分散物で印刷されることができる。表面改質プロセスは、分散媒の切り替えを含むことができる。
分散物は、選ばれた用途のために調合されることができる。分散物は、組成ならびに分散物内の粒子のキャラクタリゼーションに関してキャラクタリゼーションされることができる。一般に、インクという用語は、続いて印刷技法を用いて堆積される分散物を記述するために用いられ、インクは、インク特性を改質する別の添加剤を含むこともあり、含まないこともある。
分散物/インクは、基板の上の分散物の所望の分布を実現する選ばれた手法を用いるために堆積されることができる。例えば、インクを表面に塗布するために被覆技法及び印刷技法が用いられることができる。選ばれた印刷手法を用いて、高い分解能を有するパターンが形成されることができる。堆積の後、堆積された材料は、所望のデバイス又は状態にさらに加工されることができる。
太陽電池及び他の半導体用途の場合、特定のデバイスの一部を形成することができるドーピングされた接触を形成するために、シリコン粒子が用いられることができる。シリカ粒子の場合、粒子は、誘電体成分を形成するために、及び/又はドーパントを半導体基板に供給するために用いられることができる。図1に、代表的な印刷された基板が示される。この実施態様では、基板100は、表面被覆物102と、被覆物102を貫通して基板表面の一部を露出させる窓104、106とを有する。シリコン/シリカインクが印刷されて基板表面の上に堆積物108、110を形成する。基板は、シリコン、ゲルマニウム、又はそれらの合金を含む。適当な基板は、例えば高純度シリコンウエハ及び類似物を含む。他の実施態様では、適当な基板は、参照によって本明細書に組み込まれる「薄いシリコン又はゲルマニウムのシート及び薄いシートから形成される光起電力装置(Thin Silicon or Germanium Sheets and Photovoltaics Formed From Thin Sheets)」という標題の2007年3月13日出願の係属中のヒーズルメア(Hieslmair)らの米国特許出願第11/717,605号明細書中に記載されているシリコン/ゲルマニウム箔を含む。上記に記載された被覆技法又は印刷技法を用いて、シリコン分散物/インクが表面の上に塗布されることができる。
適切なシリコンインクを印刷する能力は、適度な分解能及び高い効率で、回路部品の形成を提供する。印刷プロセスは、大面積構造物を形成するために効果的に用いられることができる。粒子が適切に低い温度で融合されることができるなら、堆積物は、重合体基板の上に形成されることができる。これらの実施態様では、可撓性エレクトロニクスを形成するために、粉体が用いられることができる。
一般に、光学用途の場合、堆積されたシリカは、粒子から固体の塊りを形成して粒子表面における散乱を減らすために、融解されるか又は焼結される。粒子に関して、軟化温度などの加工特性、あるいは屈折率又は光発生特性などの光学特性を変化させるために、ドーパントが導入されることができる。上記で半導体加工について記載された手法は、光学用途に適合させられることができる。一般に、光学用途の場合、シリカインクは、ディスプレイ要素又は導波路などの特定の光学構造物を形成するために堆積されることができる。
本実施例は、レーザー熱分解法を用いて発生させられたシリコン粒子がアルコール中に良好に分散されることができることを示す。
本実施例は、表面改質されたシリコン粒子がより高い濃度で妥当な安定性を有して分散されることができ、液体間で移されることができることを示す。
本実施例では、粒子は、乳酸エチル中、2つの異なる濃度で直接表面改質される。
本実施例は、ガンマブチロラクトンに対してメタノール中で表面改質された試料について、結果として得られる粒子サイズ分布を比較する。
本実施例は、レーザー熱分解法を用いて合成されたシリカ粒子の分散物及び表面改質を示す。
本実施例は、代替分散用液体としてのイソプロパノール中のSiO2ナノ粒子の分散物を示した。本実施例のためのSiO2ナノ粒子は、実施例5におけるナノ粒子と同じ特性を有していた。
Claims (19)
- 極性有機液体と、少なくとも0.1重量パーセントのシリコン/ゲルマニウムナノ粒子とを含むシリコン/ゲルマニウムナノ粒子の分散物であって、前記シリコン/ゲルマニウムナノ粒子は、100nmを超えない平均一次粒子サイズと、その平均一次粒子サイズの3倍を超えない体積平均二次粒子サイズとを有し、前記分散物中の前記シリコン/ゲルマニウム粒子は、前記体積平均粒子サイズの50パーセントを超えない半値全幅を有する、体積基準のDLS粒子サイズ分布を有しており、そして混合せずに1時間経過しても沈降がない分散物。
- 前記シリコン/ゲルマニウムナノ粒子は、前記二次粒子の少なくとも95パーセントが前記平均直径の40パーセントより大きく、かつ前記平均粒子サイズの250パーセントより小さな粒子サイズを有するように二次粒子サイズの分布を有する、請求項1に記載の分散物。
- DLS測定値によって決定されたとき、前記体積平均粒子サイズの5倍より大きな二次粒子サイズは有さない、請求項1に記載の分散物。
- 前記分散物は、少なくとも5重量パーセントのシリコン/ゲルマニウム粒子を含む、請求項1に記載の分散物。
- 前記ナノ粒子は、ナノ粒子の前記表面に化学的に結合された表面改質部分を有する、請求項1に記載の分散物。
- 前記液体は、有機液体を含む、請求項1に記載の分散物。
- 前記シリコンナノ粒子は、前記材料の少なくとも1.0×10 -7 原子パーセントの濃度ドーパントを含む、請求項1に記載の分散物。
- シリコンナノ粒子を堆積させるための方法であって、請求項1に記載する分散物から形成されたインクを印刷することを含み、前記インクは、室温で400mPa・秒を超えない粘度を有する方法。
- 前記印刷することは、インクジェットプリンタによって実行される、請求項8に記載の方法。
- 前記インクは、室温で300mPa・秒を超えない粘度を有する、請求項8に記載の方法。
- 前記インクは、少なくとも2重量パーセントのシリコン/ゲルマニウム粒子の濃度を有し、前記シリコン/ゲルマニウム粒子は、それらの表面に化学的に結合された表面改質部分を有する、請求項8に記載の方法。
- 前記表面改質部分は、表面改質化合物と前記粒子との反応によって形成され、前記表面改質化合物は、アルコキシシランを含む、請求項11に記載の方法。
- 前記インクは、粘度調節用有機組成物及び有機界面活性剤を含む、請求項8に記載の方法。
- 前記インクは、2.0N/m 2 から6.0N/m 2 の表面張力を有する、請求項8に記載の方法。
- 前記表面積の90パーセント以下を覆う選ばれたパターンを有する基板表面を含む印刷された基板であって、前記パターンが、シリコン/ゲルマニウムナノ粒子を含み、前記ナノ粒子は、100nmを超えない平均一次粒子サイズを有し、前記シリコン/ゲルマニウムナノ粒子は、二次粒子サイズの分布を有し、そして前記パターンが請求項1に記載の分散物を印刷することによって形成されている基板。
- 前記パターンは、複数の個別の孤立した島を含む、請求項15に記載の印刷された基板。
- 前記シリコン/ゲルマニウムナノ粒子は、ドーピングされている、請求項15に記載の印刷された基板。
- 前記ナノ粒子は、50nmを超えない平均一次粒子サイズを有する、請求項15に記載の印刷された基板。
- 前記ナノ粒子は、前記表面又は前記粒子に化学的に結合された表面改質部分を有する、請求項15に記載の印刷された基板。
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KR20090125050A (ko) | 2009-12-03 |
US20080160265A1 (en) | 2008-07-03 |
US20110281390A1 (en) | 2011-11-17 |
JP2010514585A (ja) | 2010-05-06 |
US7993947B2 (en) | 2011-08-09 |
US8632702B2 (en) | 2014-01-21 |
US8263423B2 (en) | 2012-09-11 |
KR101498746B1 (ko) | 2015-03-04 |
US20110109688A1 (en) | 2011-05-12 |
CN103333526A (zh) | 2013-10-02 |
KR101556873B1 (ko) | 2015-10-02 |
JP2015129284A (ja) | 2015-07-16 |
US20140138135A1 (en) | 2014-05-22 |
CN101622319B (zh) | 2013-05-08 |
US20080160733A1 (en) | 2008-07-03 |
KR20140146213A (ko) | 2014-12-24 |
EP2109643A1 (en) | 2009-10-21 |
EP2109643A4 (en) | 2011-09-07 |
CN101622319A (zh) | 2010-01-06 |
US7892872B2 (en) | 2011-02-22 |
HK1139700A1 (en) | 2010-09-24 |
JP2015129285A (ja) | 2015-07-16 |
JP2015157745A (ja) | 2015-09-03 |
WO2008085806A1 (en) | 2008-07-17 |
US20120318168A1 (en) | 2012-12-20 |
US8399878B2 (en) | 2013-03-19 |
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