ATE368302T1 - Solarzelle mit rückseite-kontakt und herstellungsverfahren dazu - Google Patents
Solarzelle mit rückseite-kontakt und herstellungsverfahren dazuInfo
- Publication number
- ATE368302T1 ATE368302T1 AT02787830T AT02787830T ATE368302T1 AT E368302 T1 ATE368302 T1 AT E368302T1 AT 02787830 T AT02787830 T AT 02787830T AT 02787830 T AT02787830 T AT 02787830T AT E368302 T1 ATE368302 T1 AT E368302T1
- Authority
- AT
- Austria
- Prior art keywords
- solar cell
- doping
- diffusion zone
- production process
- back contact
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10157960 | 2001-11-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE368302T1 true ATE368302T1 (de) | 2007-08-15 |
Family
ID=7707011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02787830T ATE368302T1 (de) | 2001-11-26 | 2002-11-26 | Solarzelle mit rückseite-kontakt und herstellungsverfahren dazu |
Country Status (9)
Country | Link |
---|---|
US (1) | US7217883B2 (de) |
EP (1) | EP1449261B1 (de) |
JP (1) | JP2005510885A (de) |
CN (1) | CN100401532C (de) |
AT (1) | ATE368302T1 (de) |
AU (1) | AU2002352156B2 (de) |
DE (1) | DE60221426T2 (de) |
ES (1) | ES2289168T3 (de) |
WO (1) | WO2003047005A2 (de) |
Families Citing this family (65)
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DE10045249A1 (de) * | 2000-09-13 | 2002-04-04 | Siemens Ag | Photovoltaisches Bauelement und Verfahren zum Herstellen des Bauelements |
JP4118187B2 (ja) * | 2003-05-09 | 2008-07-16 | 信越半導体株式会社 | 太陽電池の製造方法 |
DE102004050269A1 (de) * | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
JP4657068B2 (ja) * | 2005-09-22 | 2011-03-23 | シャープ株式会社 | 裏面接合型太陽電池の製造方法 |
US20070295399A1 (en) * | 2005-12-16 | 2007-12-27 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
KR101212198B1 (ko) * | 2006-04-06 | 2012-12-13 | 삼성에스디아이 주식회사 | 태양 전지 |
US8008575B2 (en) | 2006-07-24 | 2011-08-30 | Sunpower Corporation | Solar cell with reduced base diffusion area |
DE102006041424A1 (de) * | 2006-09-04 | 2008-03-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung |
FR2906406B1 (fr) * | 2006-09-26 | 2008-12-19 | Commissariat Energie Atomique | Procede de realisation de cellule photovoltaique a heterojonction en face arriere. |
GB2442254A (en) * | 2006-09-29 | 2008-04-02 | Renewable Energy Corp Asa | Back contacted solar cell |
US7928015B2 (en) * | 2006-12-12 | 2011-04-19 | Palo Alto Research Center Incorporated | Solar cell fabrication using extruded dopant-bearing materials |
CN103333526A (zh) * | 2007-01-03 | 2013-10-02 | 内诺格雷姆公司 | 基于硅/锗的纳米颗粒油墨、掺杂型颗粒、用于半导体应用的印刷和方法 |
JP5687837B2 (ja) | 2007-02-16 | 2015-03-25 | ナノグラム・コーポレイションNanoGram Corporation | 太陽電池構造体、光起電モジュール及びこれらに対応する方法 |
KR101346896B1 (ko) | 2007-03-26 | 2013-12-31 | 엘지전자 주식회사 | Ibc형 태양전지의 제조방법 및 ibc형 태양전지 |
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JP5236914B2 (ja) * | 2007-09-19 | 2013-07-17 | シャープ株式会社 | 太陽電池の製造方法 |
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EP2239788A4 (de) * | 2008-01-30 | 2017-07-12 | Kyocera Corporation | Solarbatterieelement und verfahren zur herstellung eines solarbatterieelements |
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DE10047556A1 (de) | 2000-09-22 | 2002-04-11 | Univ Konstanz | Verfahren zur Herstellung einer Solarzelle und nach diesem Verfahren hergestellte Solarzelle |
DE10104726A1 (de) * | 2001-02-02 | 2002-08-08 | Siemens Solar Gmbh | Verfahren zur Strukturierung einer auf einem Trägermaterial aufgebrachten Oxidschicht |
DE10142481A1 (de) * | 2001-08-31 | 2003-03-27 | Rudolf Hezel | Solarzelle sowie Verfahren zur Herstellung einer solchen |
US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
-
2002
- 2002-11-26 CN CNB028233891A patent/CN100401532C/zh not_active Expired - Fee Related
- 2002-11-26 WO PCT/EP2002/013317 patent/WO2003047005A2/en active IP Right Grant
- 2002-11-26 DE DE60221426T patent/DE60221426T2/de not_active Expired - Lifetime
- 2002-11-26 US US10/496,371 patent/US7217883B2/en not_active Expired - Lifetime
- 2002-11-26 JP JP2003548321A patent/JP2005510885A/ja active Pending
- 2002-11-26 AT AT02787830T patent/ATE368302T1/de not_active IP Right Cessation
- 2002-11-26 ES ES02787830T patent/ES2289168T3/es not_active Expired - Lifetime
- 2002-11-26 EP EP02787830A patent/EP1449261B1/de not_active Expired - Lifetime
- 2002-11-26 AU AU2002352156A patent/AU2002352156B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
US20050016585A1 (en) | 2005-01-27 |
DE60221426T2 (de) | 2007-11-29 |
US7217883B2 (en) | 2007-05-15 |
WO2003047005A3 (en) | 2004-02-19 |
CN100401532C (zh) | 2008-07-09 |
AU2002352156A1 (en) | 2003-06-10 |
WO2003047005A2 (en) | 2003-06-05 |
JP2005510885A (ja) | 2005-04-21 |
EP1449261A2 (de) | 2004-08-25 |
AU2002352156B2 (en) | 2007-08-09 |
CN1592972A (zh) | 2005-03-09 |
EP1449261B1 (de) | 2007-07-25 |
ES2289168T3 (es) | 2008-02-01 |
DE60221426D1 (de) | 2007-09-06 |
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