ATE457528T1 - Herstellungsverfahren für grossflächige siliziumkarbid-bauelemente - Google Patents

Herstellungsverfahren für grossflächige siliziumkarbid-bauelemente

Info

Publication number
ATE457528T1
ATE457528T1 AT02763708T AT02763708T ATE457528T1 AT E457528 T1 ATE457528 T1 AT E457528T1 AT 02763708 T AT02763708 T AT 02763708T AT 02763708 T AT02763708 T AT 02763708T AT E457528 T1 ATE457528 T1 AT E457528T1
Authority
AT
Austria
Prior art keywords
silicon carbide
thyristors
production process
area silicon
carbide components
Prior art date
Application number
AT02763708T
Other languages
English (en)
Inventor
Anant Agarwal
Sei-Hyung Ryu
John Palmour
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE457528T1 publication Critical patent/ATE457528T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor
AT02763708T 2001-09-12 2002-09-10 Herstellungsverfahren für grossflächige siliziumkarbid-bauelemente ATE457528T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/952,064 US6770911B2 (en) 2001-09-12 2001-09-12 Large area silicon carbide devices
PCT/US2002/030300 WO2003023870A1 (en) 2001-09-12 2002-09-10 Large area silicon carbide devices and manufacturing methods therefor

Publications (1)

Publication Number Publication Date
ATE457528T1 true ATE457528T1 (de) 2010-02-15

Family

ID=25492546

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02763708T ATE457528T1 (de) 2001-09-12 2002-09-10 Herstellungsverfahren für grossflächige siliziumkarbid-bauelemente

Country Status (9)

Country Link
US (2) US6770911B2 (de)
EP (1) EP1428268B1 (de)
JP (1) JP4644828B2 (de)
KR (1) KR20040033300A (de)
CN (1) CN1586014A (de)
AT (1) ATE457528T1 (de)
CA (1) CA2459336A1 (de)
DE (1) DE60235312D1 (de)
WO (1) WO2003023870A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6982440B2 (en) * 2002-02-19 2006-01-03 Powersicel, Inc. Silicon carbide semiconductor devices with a regrown contact layer
US7057214B2 (en) * 2003-07-01 2006-06-06 Optiswitch Technology Corporation Light-activated semiconductor switches
US7679223B2 (en) * 2005-05-13 2010-03-16 Cree, Inc. Optically triggered wide bandgap bipolar power switching devices and circuits
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
US7391057B2 (en) * 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7582917B2 (en) * 2006-03-10 2009-09-01 Bae Systems Information And Electronic Systems Integration Inc. Monolithically integrated light-activated thyristor and method
US8193537B2 (en) * 2006-06-19 2012-06-05 Ss Sc Ip, Llc Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
US7977821B2 (en) * 2007-05-10 2011-07-12 Honeywell International Inc. High power density switch module with improved thermal management and packaging
US7800196B2 (en) * 2008-09-30 2010-09-21 Northrop Grumman Systems Corporation Semiconductor structure with an electric field stop layer for improved edge termination capability
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
US8816715B2 (en) * 2011-05-12 2014-08-26 Nanya Technology Corp. MOS test structure, method for forming MOS test structure and method for performing wafer acceptance test
US9171977B2 (en) 2011-06-17 2015-10-27 Cree, Inc. Optically assist-triggered wide bandgap thyristors having positive temperature coefficients
US9633998B2 (en) * 2012-09-13 2017-04-25 General Electric Company Semiconductor device and method for making the same
CN103579016B (zh) * 2013-11-04 2017-06-23 株洲南车时代电气股份有限公司 一种大电流碳化硅sbd/jbs功率芯片结构及其制造方法
CN108878523B (zh) * 2018-07-11 2021-06-15 北京优捷敏半导体技术有限公司 一种碳化硅门极可关断晶闸管及其制造方法
TWI822438B (zh) * 2022-11-02 2023-11-11 台亞半導體股份有限公司 碳化矽檢光閘流體與製造方法

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH567803A5 (de) * 1974-01-18 1975-10-15 Bbc Brown Boveri & Cie
JPS53112682A (en) * 1977-03-14 1978-10-02 Mitsubishi Electric Corp Photo thyristor
JPS54128686A (en) * 1978-03-29 1979-10-05 Fuji Electric Co Ltd Photo trigger thyristor
JPS6019150B2 (ja) * 1979-10-05 1985-05-14 株式会社日立製作所 半導体装置の製造方法
JPS5811848A (ja) 1981-07-14 1983-01-22 Yanagimoto Seisakusho:Kk 作用電極分割型マイクロフロ−セルによるボルタンメトリ−検出システム
US4387503A (en) 1981-08-13 1983-06-14 Mostek Corporation Method for programming circuit elements in integrated circuits
JPS58118148A (ja) * 1982-01-05 1983-07-14 Toshiba Corp 光点弧形双方向サイリスタ
JPS58118414A (ja) 1982-01-06 1983-07-14 Nissan Motor Co Ltd 風切防止装置
JPS58118418A (ja) * 1982-01-08 1983-07-14 Daikiyoo Bebasuto Kk サンル−フ装置のカバ−体移動方法
JPS58142629A (ja) 1982-02-17 1983-08-24 Toshiba Corp 対角型マトリクス回路網
US4543594A (en) 1982-09-07 1985-09-24 Intel Corporation Fusible link employing capacitor structure
JPS5989463A (ja) * 1982-11-15 1984-05-23 Toshiba Corp サイリスタ
DE3369234D1 (en) 1982-11-15 1987-02-19 Toshiba Kk Thyristor device protected from an overvoltage
JPS59105354A (ja) 1982-12-09 1984-06-18 Toshiba Corp 半導体装置
US4779126A (en) 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
JPS6279667A (ja) * 1985-10-03 1987-04-13 Mitsubishi Electric Corp 半導体装置
US4779123A (en) * 1985-12-13 1988-10-18 Siliconix Incorporated Insulated gate transistor array
US4894791A (en) 1986-02-10 1990-01-16 Dallas Semiconductor Corporation Delay circuit for a monolithic integrated circuit and method for adjusting delay of same
JPS6384066A (ja) * 1986-09-26 1988-04-14 Semiconductor Res Found 集積化光トリガ・光クエンチ静電誘導サイリスタ及びその製造方法
US4799126A (en) 1987-04-16 1989-01-17 Navistar International Transportation Corp. Overload protection for D.C. circuits
GB2206010A (en) 1987-06-08 1988-12-21 Philips Electronic Associated Differential amplifier and current sensing circuit including such an amplifier
US4777471A (en) 1987-06-22 1988-10-11 Precision Microdevices Inc. Apparatus for multiple link trimming in precision integrated circuits
JPH0620128B2 (ja) * 1987-07-02 1994-03-16 日本電気株式会社 半導体素子
US4860185A (en) 1987-08-21 1989-08-22 Electronic Research Group, Inc. Integrated uninterruptible power supply for personal computers
JPH01236670A (ja) * 1988-03-17 1989-09-21 Nec Corp 半導体素子
US4814283A (en) 1988-04-08 1989-03-21 General Electric Company Simple automated discretionary bonding of multiple parallel elements
US4829014A (en) 1988-05-02 1989-05-09 General Electric Company Screenable power chip mosaics, a method for fabricating large power semiconductor chips
US5021861A (en) 1990-05-23 1991-06-04 North Carolina State University Integrated circuit power device with automatic removal of defective devices and method of fabricating same
US5539217A (en) * 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
WO1995032524A1 (en) 1994-05-24 1995-11-30 Abb Research Ltd. Semiconductor device in silicon carbide with passivated surface
JPH08213607A (ja) * 1995-02-08 1996-08-20 Ngk Insulators Ltd 半導体装置およびその製造方法
JP3338234B2 (ja) * 1995-05-17 2002-10-28 三菱電機株式会社 光トリガサイリスタ及びその製造方法
US5883403A (en) 1995-10-03 1999-03-16 Hitachi, Ltd. Power semiconductor device
KR0156334B1 (ko) * 1995-10-14 1998-10-15 김광호 차폐 본딩 와이어를 구비하는 고주파, 고밀도용 반도체 칩 패키지
US5663580A (en) * 1996-03-15 1997-09-02 Abb Research Ltd. Optically triggered semiconductor device
EP0902979B1 (de) * 1996-05-20 2010-07-14 Infineon Technologies AG Thyristor mit integriertem du/dt-schutz
JPH10284718A (ja) * 1997-04-08 1998-10-23 Fuji Electric Co Ltd 絶縁ゲート型サイリスタ
US6154477A (en) * 1997-05-13 2000-11-28 Berkeley Research Associates, Inc. On-board laser-triggered multi-layer semiconductor power switch
US5831289A (en) * 1997-10-06 1998-11-03 Northrop Grumman Corporation Silicon carbide gate turn-off thyristor arrangement
US6281521B1 (en) * 1998-07-09 2001-08-28 Cree Research Inc. Silicon carbide horizontal channel buffered gate semiconductor devices
US6300248B1 (en) * 1999-08-03 2001-10-09 Taiwan Semiconductor Manufacturing Company, Ltd On-chip pad conditioning for chemical mechanical polishing
US6380569B1 (en) * 1999-08-10 2002-04-30 Rockwell Science Center, Llc High power unipolar FET switch

Also Published As

Publication number Publication date
US20030047748A1 (en) 2003-03-13
JP2005503024A (ja) 2005-01-27
CN1586014A (zh) 2005-02-23
US20040206976A1 (en) 2004-10-21
CA2459336A1 (en) 2003-03-20
DE60235312D1 (de) 2010-03-25
KR20040033300A (ko) 2004-04-21
US7135359B2 (en) 2006-11-14
EP1428268A1 (de) 2004-06-16
JP4644828B2 (ja) 2011-03-09
US6770911B2 (en) 2004-08-03
WO2003023870A1 (en) 2003-03-20
EP1428268B1 (de) 2010-02-10

Similar Documents

Publication Publication Date Title
ATE457528T1 (de) Herstellungsverfahren für grossflächige siliziumkarbid-bauelemente
DE69118530D1 (de) Verfahren zum Herstellen von Halbleiter-Bauelementen und damit hergestellte Solarzelle
EG17560A (en) Solar cell of silicon
BR9205169A (pt) Processo para fabricacao de uma celula solar,processo para estruturacao de material e celula solar
DE60132158D1 (de) Hochspannungs-halbleiteranordnung mit einer feldplattenstruktur
FR2813440B1 (fr) Dispositif a semiconducteur pour la commande d'energie electrique
DE60221426D1 (de) SOLARZELLE MIT RÜCKSEITE-KONTAKT und HERSTELLUNGSVERFAHREN dazu
ATE356440T1 (de) Photovoltaisches modul mit einstellbarem kühlkörper und herstellungsverfahren
EP1480277A4 (de) Solarzellenmodul und herstellungsverfahren dafür
WO2003098666A3 (de) Hochfrequenz-leistungshalbleitermodul mit hohlraumgehäuse sowie verfahren zu dessen herstellung
TW200635057A (en) Back junction solar cell and process for producing the same
WO2009038323A3 (en) Solar cell and method for manufacturing the same
CA2295248A1 (en) Power devices in wide bandgap semiconductor
TW200644291A (en) Radiation-emitting semiconductor chip and method to produce a semiconductor-body for such a semiconductor chip
DE59813600D1 (de) Vertikal igbt mit einer soi-struktur
JPS54138370A (en) Flip chip mounting body
JPS5539636A (en) Composite semiconductor
EP4235818A3 (de) Solarzelle und herstellungsverfahren dafür
CN205122585U (zh) 一种金属陶瓷表贴封装晶体管阵列板
JPS6447042A (en) Semiconductor device
DE10345419A1 (de) Zuleitungsloser, miniaturisierter Halbleiterdioden-Brückengleichrichter und Verfahren zu dessen Herstellung
CN115863425A (zh) 一种蓝宝石衬底的GaN HEMT器件及共源共栅结构
CN201017884Y (zh) 一种大功率双向晶闸管
JO1779B1 (en) How to make solar cells and solar cells
RU92014567A (ru) Полупроводниковый прибор

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties