WO2003098666A3 - Hochfrequenz-leistungshalbleitermodul mit hohlraumgehäuse sowie verfahren zu dessen herstellung - Google Patents

Hochfrequenz-leistungshalbleitermodul mit hohlraumgehäuse sowie verfahren zu dessen herstellung Download PDF

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Publication number
WO2003098666A3
WO2003098666A3 PCT/DE2003/001656 DE0301656W WO03098666A3 WO 2003098666 A3 WO2003098666 A3 WO 2003098666A3 DE 0301656 W DE0301656 W DE 0301656W WO 03098666 A3 WO03098666 A3 WO 03098666A3
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Prior art keywords
module
hollow housing
frequency power
power semiconductor
production
Prior art date
Application number
PCT/DE2003/001656
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English (en)
French (fr)
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WO2003098666A2 (de
Inventor
Bernd Betz
Jochen Dangelmaier
Rudolf Lehner
Stefan Paulus
Original Assignee
Infineon Technologies Ag
Bernd Betz
Jochen Dangelmaier
Rudolf Lehner
Stefan Paulus
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Publication date
Application filed by Infineon Technologies Ag, Bernd Betz, Jochen Dangelmaier, Rudolf Lehner, Stefan Paulus filed Critical Infineon Technologies Ag
Priority to EP03740012A priority Critical patent/EP1508167A2/de
Priority to US10/515,236 priority patent/US7417198B2/en
Publication of WO2003098666A2 publication Critical patent/WO2003098666A2/de
Publication of WO2003098666A3 publication Critical patent/WO2003098666A3/de

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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Abstract

Die Erfindung betrifft ein Hochfrequenz-Leistungshalbleitermodul (1) mit Hohlraumgehäuse (3), das aus drei Modulen aufgebaut ist, einem 1. Modul (8), das einen nach oben und unten offenen Gehäuserahmen (6) aufweist mit horizontal angeordneten Flachleitern (5), einem 2. Modul (9), das die Chipinsel (4) als Wärmesenke mit mindestens einem Hochfrequenz-Halbleiterbauelement (2) aufweist, wobei das 2. Modul (9) den Boden des Hohlraumgehäuses (3) bildet und einem 3. Modul (10), das den Gehäusedeckel (7) aufweist.
PCT/DE2003/001656 2002-05-22 2003-05-22 Hochfrequenz-leistungshalbleitermodul mit hohlraumgehäuse sowie verfahren zu dessen herstellung WO2003098666A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP03740012A EP1508167A2 (de) 2002-05-22 2003-05-22 Hochfrequenz-leistungshalbleitermodul mit hohlraumgehäuse sowie verfahren zu dessen herstellung
US10/515,236 US7417198B2 (en) 2002-05-22 2003-05-22 Radiofrequency power semiconductor module with cavity housing, and method for producing it

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2002123035 DE10223035A1 (de) 2002-05-22 2002-05-22 Elektronisches Bauteil mit Hohlraumgehäuse, insbesondere Hochfrequenz-Leistungsmodul
DE10223035.8 2002-05-22

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WO2003098666A2 WO2003098666A2 (de) 2003-11-27
WO2003098666A3 true WO2003098666A3 (de) 2004-02-19

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US (1) US7417198B2 (de)
EP (1) EP1508167A2 (de)
DE (1) DE10223035A1 (de)
WO (1) WO2003098666A2 (de)

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EP1508167A2 (de) 2005-02-23
US20060012016A1 (en) 2006-01-19
DE10223035A1 (de) 2003-12-04
WO2003098666A2 (de) 2003-11-27

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