WO2005106954A3 - Leistungshalbleiterschaltung und verfahren zum herstellen einer leistungshalbleiterschaltung - Google Patents

Leistungshalbleiterschaltung und verfahren zum herstellen einer leistungshalbleiterschaltung Download PDF

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Publication number
WO2005106954A3
WO2005106954A3 PCT/EP2005/002708 EP2005002708W WO2005106954A3 WO 2005106954 A3 WO2005106954 A3 WO 2005106954A3 EP 2005002708 W EP2005002708 W EP 2005002708W WO 2005106954 A3 WO2005106954 A3 WO 2005106954A3
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WO
WIPO (PCT)
Prior art keywords
power semiconductor
semiconductor circuit
producing
heat conducting
module
Prior art date
Application number
PCT/EP2005/002708
Other languages
English (en)
French (fr)
Other versions
WO2005106954A2 (de
Inventor
Reinhold Bayerer
Original Assignee
Eupec Gmbh & Co Kg
Reinhold Bayerer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eupec Gmbh & Co Kg, Reinhold Bayerer filed Critical Eupec Gmbh & Co Kg
Priority to JP2007507680A priority Critical patent/JP2007533146A/ja
Publication of WO2005106954A2 publication Critical patent/WO2005106954A2/de
Publication of WO2005106954A3 publication Critical patent/WO2005106954A3/de
Priority to US11/549,809 priority patent/US20070145576A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Die Leistungshalbleiterschaltung umfasst ein Leistungschalbleitermodul (2), das als flache Baugruppe ausgebildet ist. Um die sich damit ergebeden Gestaltungsmöglichkeiten zu nutzen und eine Leistungshalbleiterschaltung anzugeben, die sich durch eine automatisierbare Herstellung und eine besonders raumsparende Bauform auszeichnet, ist vorgesehen, dass die flache Baugruppe mit ihrem Substrat (11) mittels Wärmeleitkleber (20) unmittelbar auf eine als Kühlelement (5) fungierende wärmleitende Grundplatte (1) aufgeklebt ist.
PCT/EP2005/002708 2004-04-16 2005-03-14 Leistungshalbleiterschaltung und verfahren zum herstellen einer leistungshalbleiterschaltung WO2005106954A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007507680A JP2007533146A (ja) 2004-04-16 2005-03-14 電力半導体回路および電力半導体回路の製造方法
US11/549,809 US20070145576A1 (en) 2004-04-16 2006-10-16 Power Semiconductor Circuit And Method Of Manufacturing A Power Semiconductor Circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200410018471 DE102004018471B4 (de) 2004-04-16 2004-04-16 Leistungshalbleiterschaltung und Verfahren zum Herstellen einer Leistungshalbleiterschaltung
DE102004018471.2 2004-04-16

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/549,809 Continuation US20070145576A1 (en) 2004-04-16 2006-10-16 Power Semiconductor Circuit And Method Of Manufacturing A Power Semiconductor Circuit

Publications (2)

Publication Number Publication Date
WO2005106954A2 WO2005106954A2 (de) 2005-11-10
WO2005106954A3 true WO2005106954A3 (de) 2005-12-29

Family

ID=34961207

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/002708 WO2005106954A2 (de) 2004-04-16 2005-03-14 Leistungshalbleiterschaltung und verfahren zum herstellen einer leistungshalbleiterschaltung

Country Status (4)

Country Link
US (1) US20070145576A1 (de)
JP (1) JP2007533146A (de)
DE (1) DE102004018471B4 (de)
WO (1) WO2005106954A2 (de)

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Publication number Priority date Publication date Assignee Title
DE102005061016B4 (de) * 2005-12-19 2018-12-06 Infineon Technologies Ag Leistungshalbleitermodul, Verfahren zu seiner Herstellung und Verwendung in einem Schaltnetzteil
JP2009130060A (ja) * 2007-11-21 2009-06-11 Toyota Industries Corp 放熱装置
EP2144284A1 (de) * 2008-07-11 2010-01-13 Siemens Aktiengesellschaft Verfahren zum Herstellen eines Anschlusskontaktes an einem Halbleiterbauelement für die Leistungselektronik und elektronisches Bauteil mit einem auf diese Weise an einem Halblei-terbauelement hergestellten Anschlusskontakt
US8787003B2 (en) * 2011-10-12 2014-07-22 Infineon Technologies Ag Low inductance capacitor module and power system with low inductance capacitor module
JP5734364B2 (ja) * 2012-11-22 2015-06-17 株式会社デンソー 電力変換装置
DE102015221925A1 (de) * 2015-11-09 2017-05-11 Continental Automotive Gmbh Leistungsschalter für ein Kraftfahrzeug mit Bondverbindung zwischen Zwischenkreiskondensator und Leistungselektronikeinheit
CA3091748A1 (en) * 2018-03-05 2019-09-12 Sew-Eurodrive Gmbh & Co. Kg Electrical appliance arrangement having an electrical appliance which can be fastened to a support element, in particular a wall
EP4009364B8 (de) 2020-12-03 2023-12-06 Hitachi Energy Ltd Anordnung eines leistungshalbleitermoduls und einem kühler

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DE8914493U1 (de) * 1989-12-08 1990-05-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
EP0901166A1 (de) * 1997-08-16 1999-03-10 Abb Research Ltd. Leistungshalbleitermodul mit in Submodulen integrierten Kühlern
US6150725A (en) * 1997-02-27 2000-11-21 Sanyo Electric Co., Ltd. Semiconductor devices with means to reduce contamination

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US4555052A (en) * 1983-02-28 1985-11-26 Fairchild Camera & Instrument Corporation Lead wire bond attempt detection
JP3316714B2 (ja) * 1994-05-31 2002-08-19 三菱電機株式会社 半導体装置
DE19531496C1 (de) * 1995-08-26 1996-11-14 Semikron Elektronik Gmbh Leistungshalbleitermodul, insb. Stromumrichter mit Folienverbund als isolierendes Substrat
KR100320983B1 (ko) * 1997-08-22 2002-06-20 포만 제프리 엘 칩조립체및직접적인개방열전도성경로의제공방법
JP2002203942A (ja) * 2000-12-28 2002-07-19 Fuji Electric Co Ltd パワー半導体モジュール
AU2002340750A1 (en) * 2001-09-28 2003-04-14 Siemens Aktiengesellschaft Method for contacting electrical contact surfaces of a substrate and device consisting of a substrate having electrical contact surfaces
DE10159020C1 (de) * 2001-11-30 2003-03-20 Semikron Elektronik Gmbh Schaltungsanordnung und Verfahren zur Überwachung von Leistungshalbleiterbauelementen
DE10200066A1 (de) * 2002-01-03 2003-07-17 Siemens Ag Leistungselektronikeinheit
DE10314172B4 (de) * 2003-03-28 2006-11-30 Infineon Technologies Ag Verfahren zum Betreiben einer Anordnung aus einem elektrischen Bauelement auf einem Substrat und Verfahren zum Herstellen der Anordnung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8914493U1 (de) * 1989-12-08 1990-05-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
US6150725A (en) * 1997-02-27 2000-11-21 Sanyo Electric Co., Ltd. Semiconductor devices with means to reduce contamination
EP0901166A1 (de) * 1997-08-16 1999-03-10 Abb Research Ltd. Leistungshalbleitermodul mit in Submodulen integrierten Kühlern

Also Published As

Publication number Publication date
DE102004018471B4 (de) 2009-04-16
WO2005106954A2 (de) 2005-11-10
US20070145576A1 (en) 2007-06-28
JP2007533146A (ja) 2007-11-15
DE102004018471A1 (de) 2005-11-10

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