WO2008123172A1 - ヒートスプレッダモジュール、ヒートシンク及びそれらの製法 - Google Patents

ヒートスプレッダモジュール、ヒートシンク及びそれらの製法 Download PDF

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Publication number
WO2008123172A1
WO2008123172A1 PCT/JP2008/055369 JP2008055369W WO2008123172A1 WO 2008123172 A1 WO2008123172 A1 WO 2008123172A1 JP 2008055369 W JP2008055369 W JP 2008055369W WO 2008123172 A1 WO2008123172 A1 WO 2008123172A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat
spreader module
heat sink
heat spreader
module
Prior art date
Application number
PCT/JP2008/055369
Other languages
English (en)
French (fr)
Inventor
Yoshihiro Tanaka
Yumihiko Kuno
Shuhei Ishikawa
Original Assignee
Ngk Insulators, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ngk Insulators, Ltd. filed Critical Ngk Insulators, Ltd.
Publication of WO2008123172A1 publication Critical patent/WO2008123172A1/ja

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D19/00—Casting in, on, or around objects which form part of the product
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Abstract

　ヒートスプレッダモジュール１０では、熱伝導性の基体２０は絶縁基板１２の下面に接合された基板支持面２４ａを有し、該基板支持面２４ａの周縁に沿ってフレーム部２４ｂが設けられているため、そのようなフレーム部２４ｂのない場合に比べて剛性が高まる。このため、基体２０と絶縁基板１２との熱膨張差による反りの発生が軽減される。また、基体２０の全体の厚さを厚くするわけではないためモジュールの熱伝導性能は下がらない。
PCT/JP2008/055369 2007-03-27 2008-03-24 ヒートスプレッダモジュール、ヒートシンク及びそれらの製法 WO2008123172A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007081425 2007-03-27
JP2007-081425 2007-03-27

Publications (1)

Publication Number Publication Date
WO2008123172A1 true WO2008123172A1 (ja) 2008-10-16

Family

ID=39830669

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055369 WO2008123172A1 (ja) 2007-03-27 2008-03-24 ヒートスプレッダモジュール、ヒートシンク及びそれらの製法

Country Status (1)

Country Link
WO (1) WO2008123172A1 (ja)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010103346A1 (en) * 2009-03-10 2010-09-16 Advanced Material Technologies Co., Ltd. An electrically insulating heat radiator
JP2011077389A (ja) * 2009-09-30 2011-04-14 Dowa Metaltech Kk 金属−セラミックス接合基板及びその製造方法
JP2012099821A (ja) * 2010-11-02 2012-05-24 Abb Technology Ag ベースプレート
JP2012172177A (ja) * 2011-02-18 2012-09-10 Denki Kagaku Kogyo Kk アルミニウム合金−セラミックス複合体、この複合体の製造方法、及びこの複合体からなる応力緩衝材
WO2014170997A1 (ja) * 2013-04-19 2014-10-23 株式会社 日立製作所 パワーモジュール及びその製造方法
JP2015043356A (ja) * 2013-08-26 2015-03-05 三菱電機株式会社 パワーモジュール
JP2015169192A (ja) * 2014-03-11 2015-09-28 日産自動車株式会社 内燃機関のピストン
JP2016180185A (ja) * 2016-05-09 2016-10-13 デンカ株式会社 アルミニウム合金−セラミックス複合体、この複合体の製造方法、及びこの複合体からなる応力緩衝材
EP2713391A3 (en) * 2012-09-27 2017-11-08 Dowa Metaltech Co., Ltd. Heat radiating plate and method for producing same
JP2017228551A (ja) * 2016-06-20 2017-12-28 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合基板およびその製造方法
WO2018131583A1 (ja) * 2017-01-13 2018-07-19 三菱電機株式会社 金属－セラミックス接合基板及びその製造方法
WO2018154687A1 (ja) * 2017-02-23 2018-08-30 三菱電機株式会社 半導体装置
JP2019096858A (ja) * 2017-11-20 2019-06-20 富士通化成株式会社 複合伝熱部材、及び複合伝熱部材の製造方法
CN111356544A (zh) * 2017-11-20 2020-06-30 三菱综合材料株式会社 复合传热部件及复合传热部件的制造方法
EP3660895A4 (en) * 2017-07-27 2020-08-19 BYD Company Limited HEAT DISSIPATION ELEMENT AND ITS PREPARATION PROCESS, AND IGBT MODULE
EP3660894A4 (en) * 2017-07-27 2020-08-19 BYD Company Limited HEAT DRAINAGE ELEMENT AND METHOD FOR MANUFACTURING IT, AND IGBT MODULE
EP4307359A1 (en) * 2022-07-15 2024-01-17 Infineon Technologies AG Power semiconductor module arrangement and method for producing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH056949A (ja) * 1991-06-27 1993-01-14 Aichi Steel Works Ltd ヒ−トシンク
JP2000277953A (ja) * 1999-03-23 2000-10-06 Hitachi Metals Ltd セラミックス回路基板
JP2003229531A (ja) * 2002-02-05 2003-08-15 Sanyo Electric Co Ltd 混成集積回路装置およびその製造方法
JP2005129577A (ja) * 2003-10-21 2005-05-19 Dowa Mining Co Ltd 金属−セラミックス接合基板およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH056949A (ja) * 1991-06-27 1993-01-14 Aichi Steel Works Ltd ヒ−トシンク
JP2000277953A (ja) * 1999-03-23 2000-10-06 Hitachi Metals Ltd セラミックス回路基板
JP2003229531A (ja) * 2002-02-05 2003-08-15 Sanyo Electric Co Ltd 混成集積回路装置およびその製造方法
JP2005129577A (ja) * 2003-10-21 2005-05-19 Dowa Mining Co Ltd 金属−セラミックス接合基板およびその製造方法

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012050987A (ja) * 2009-03-10 2012-03-15 Am Technology:Kk 電気絶縁性を有する放熱基板
WO2010103346A1 (en) * 2009-03-10 2010-09-16 Advanced Material Technologies Co., Ltd. An electrically insulating heat radiator
JP2011077389A (ja) * 2009-09-30 2011-04-14 Dowa Metaltech Kk 金属−セラミックス接合基板及びその製造方法
JP2012099821A (ja) * 2010-11-02 2012-05-24 Abb Technology Ag ベースプレート
EP2447990B1 (en) * 2010-11-02 2020-12-23 ABB Power Grids Switzerland AG Base plate
JP2012172177A (ja) * 2011-02-18 2012-09-10 Denki Kagaku Kogyo Kk アルミニウム合金−セラミックス複合体、この複合体の製造方法、及びこの複合体からなる応力緩衝材
EP2713391A3 (en) * 2012-09-27 2017-11-08 Dowa Metaltech Co., Ltd. Heat radiating plate and method for producing same
US11162745B2 (en) 2012-09-27 2021-11-02 Dowa Metaltech Co., Ltd. Heat radiating plate and method for producing same
US10619948B2 (en) 2012-09-27 2020-04-14 Dowa Metaltech Co., Ltd. Heat radiating plate with supporting members and protrusion members
WO2014170997A1 (ja) * 2013-04-19 2014-10-23 株式会社 日立製作所 パワーモジュール及びその製造方法
JPWO2014170997A1 (ja) * 2013-04-19 2017-02-16 株式会社日立製作所 パワーモジュール及びその製造方法
JP2015043356A (ja) * 2013-08-26 2015-03-05 三菱電機株式会社 パワーモジュール
JP2015169192A (ja) * 2014-03-11 2015-09-28 日産自動車株式会社 内燃機関のピストン
JP2016180185A (ja) * 2016-05-09 2016-10-13 デンカ株式会社 アルミニウム合金−セラミックス複合体、この複合体の製造方法、及びこの複合体からなる応力緩衝材
JP2017228551A (ja) * 2016-06-20 2017-12-28 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合基板およびその製造方法
WO2018131583A1 (ja) * 2017-01-13 2018-07-19 三菱電機株式会社 金属－セラミックス接合基板及びその製造方法
CN110169211B (zh) * 2017-01-13 2022-02-18 三菱电机株式会社 金属-陶瓷接合基板及其制造方法
JPWO2018131583A1 (ja) * 2017-01-13 2019-06-27 三菱電機株式会社 金属−セラミックス接合基板及びその製造方法
CN110169211A (zh) * 2017-01-13 2019-08-23 三菱电机株式会社 金属-陶瓷接合基板及其制造方法
WO2018154687A1 (ja) * 2017-02-23 2018-08-30 三菱電機株式会社 半導体装置
JPWO2018154687A1 (ja) * 2017-02-23 2019-11-14 三菱電機株式会社 半導体装置
EP3660894A4 (en) * 2017-07-27 2020-08-19 BYD Company Limited HEAT DRAINAGE ELEMENT AND METHOD FOR MANUFACTURING IT, AND IGBT MODULE
EP3660895A4 (en) * 2017-07-27 2020-08-19 BYD Company Limited HEAT DISSIPATION ELEMENT AND ITS PREPARATION PROCESS, AND IGBT MODULE
EP3715014A4 (en) * 2017-11-20 2021-07-28 Mitsubishi Materials Corporation COMPOSITE HEAT TRANSFER ELEMENT AND METHOD FOR PRODUCING A COMPOSITE HEAT TRANSFER ELEMENT
CN111356544A (zh) * 2017-11-20 2020-06-30 三菱综合材料株式会社 复合传热部件及复合传热部件的制造方法
JP2019096858A (ja) * 2017-11-20 2019-06-20 富士通化成株式会社 複合伝熱部材、及び複合伝熱部材の製造方法
JP7119671B2 (ja) 2017-11-20 2022-08-17 三菱マテリアル株式会社 複合伝熱部材、及び複合伝熱部材の製造方法
EP4307359A1 (en) * 2022-07-15 2024-01-17 Infineon Technologies AG Power semiconductor module arrangement and method for producing the same

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