WO2008078746A1 - 半導体素子の実装構造体及び半導体素子の実装方法 - Google Patents

半導体素子の実装構造体及び半導体素子の実装方法 Download PDF

Info

Publication number
WO2008078746A1
WO2008078746A1 PCT/JP2007/074844 JP2007074844W WO2008078746A1 WO 2008078746 A1 WO2008078746 A1 WO 2008078746A1 JP 2007074844 W JP2007074844 W JP 2007074844W WO 2008078746 A1 WO2008078746 A1 WO 2008078746A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor element
element mounting
mounting structure
adhesive resin
sealing adhesive
Prior art date
Application number
PCT/JP2007/074844
Other languages
English (en)
French (fr)
Inventor
Yoshihiro Tomura
Daido Komyoji
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to CN2007800485532A priority Critical patent/CN101578695B/zh
Priority to US12/521,020 priority patent/US8110933B2/en
Priority to JP2008551119A priority patent/JP5039058B2/ja
Publication of WO2008078746A1 publication Critical patent/WO2008078746A1/ja

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/13Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3185Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05568Disposition the whole external layer protruding from the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05573Single external layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655Nickel [Ni] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26175Flow barriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/27011Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/273Manufacturing methods by local deposition of the material of the layer connector
    • H01L2224/2733Manufacturing methods by local deposition of the material of the layer connector in solid form
    • H01L2224/27334Manufacturing methods by local deposition of the material of the layer connector in solid form using preformed layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3205Shape
    • H01L2224/32057Shape in side view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/75252Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75314Auxiliary members on the pressing surface
    • H01L2224/75315Elastomer inlay
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75314Auxiliary members on the pressing surface
    • H01L2224/75315Elastomer inlay
    • H01L2224/75316Elastomer inlay with retaining mechanisms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81191Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009Pre-treatment of the layer connector or the bonding area
    • H01L2224/83051Forming additional members, e.g. dam structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83194Lateral distribution of the layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/1579Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30105Capacitance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

 半導体素子の外周端部に対向する位置における基板表面に、その内側の一部に封止接着用樹脂が配置された凹部を形成することで、封止接着用樹脂におけるフィレット部分(裾広がり部分)の配置領域の拡大を抑制しながら、その傾斜角度を大きくする。これにより、実装時の加熱処理や冷却処理によって生じる各部材の熱膨張差及び熱収縮差による半導体素子の周辺部分に発生する応力負荷を軽減し、半導体素子の実装構造体の内部破壊を回避する。
PCT/JP2007/074844 2006-12-26 2007-12-25 半導体素子の実装構造体及び半導体素子の実装方法 WO2008078746A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2007800485532A CN101578695B (zh) 2006-12-26 2007-12-25 半导体元件的安装结构体及半导体元件的安装方法
US12/521,020 US8110933B2 (en) 2006-12-26 2007-12-25 Semiconductor device mounted structure and semiconductor device mounted method
JP2008551119A JP5039058B2 (ja) 2006-12-26 2007-12-25 半導体素子の実装構造体

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-349511 2006-12-26
JP2006349511 2006-12-26

Publications (1)

Publication Number Publication Date
WO2008078746A1 true WO2008078746A1 (ja) 2008-07-03

Family

ID=39562535

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/074844 WO2008078746A1 (ja) 2006-12-26 2007-12-25 半導体素子の実装構造体及び半導体素子の実装方法

Country Status (4)

Country Link
US (1) US8110933B2 (ja)
JP (1) JP5039058B2 (ja)
CN (1) CN101578695B (ja)
WO (1) WO2008078746A1 (ja)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187735A (ja) * 2010-03-09 2011-09-22 Toshiba Corp 半導体発光装置および半導体発光装置の製造方法
JP2012028457A (ja) * 2010-07-21 2012-02-09 Murata Mfg Co Ltd セラミック電子部品及び配線基板
JP2013537365A (ja) * 2010-09-09 2013-09-30 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド ポリマー充填剤溝を有する半導体チップデバイス
JP2017098508A (ja) * 2015-11-27 2017-06-01 富士電機株式会社 半導体装置
JP2017120800A (ja) * 2015-12-28 2017-07-06 富士通株式会社 半導体素子、半導体素子の製造方法及び電子機器
JP2017152484A (ja) * 2016-02-23 2017-08-31 京セラ株式会社 配線基板
WO2018074581A1 (ja) * 2016-10-21 2018-04-26 ソニーセミコンダクタソリューションズ株式会社 電子基板、および電子装置
JP2018113301A (ja) * 2017-01-10 2018-07-19 トヨタ自動車株式会社 半導体装置とその製造方法
WO2020003838A1 (ja) * 2018-06-27 2020-01-02 京セラ株式会社 接着構造、撮像装置、および移動体
JP2021009938A (ja) * 2019-07-01 2021-01-28 新光電気工業株式会社 配線基板、接合型配線基板及び配線基板の製造方法
US20220254738A1 (en) * 2017-10-30 2022-08-11 Mitsubishi Electric Corporation Power semiconductor device and manufacturing method for power semiconductor device
US11676929B2 (en) 2016-10-21 2023-06-13 Sony Semiconductor Solutions Corporation Electronic substrate and electronic apparatus

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5210839B2 (ja) * 2008-12-10 2013-06-12 新光電気工業株式会社 配線基板及びその製造方法
US9484279B2 (en) * 2010-06-02 2016-11-01 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming EMI shielding layer with conductive material around semiconductor die
US8536718B2 (en) 2010-06-24 2013-09-17 Stats Chippac Ltd. Integrated circuit packaging system with trenches and method of manufacture thereof
US8546957B2 (en) 2010-12-09 2013-10-01 Stats Chippac Ltd. Integrated circuit packaging system with dielectric support and method of manufacture thereof
CN102563557B (zh) * 2010-12-30 2016-08-17 欧司朗股份有限公司 用于灯条的封装方法
TW201246501A (en) * 2011-01-27 2012-11-16 Panasonic Corp Substrate with though electrode and method for producing same
US9355924B2 (en) * 2012-10-30 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit underfill scheme
US9368422B2 (en) * 2012-12-20 2016-06-14 Nvidia Corporation Absorbing excess under-fill flow with a solder trench
US9437520B2 (en) * 2013-03-13 2016-09-06 Toyota Jidosha Kabushiki Kaisha Semiconductor device including a semiconductor element and a fixed member to which the semiconductor element is fixed
CN104112739A (zh) * 2013-04-16 2014-10-22 展晶科技(深圳)有限公司 发光二极管
CN104112806A (zh) * 2013-04-17 2014-10-22 展晶科技(深圳)有限公司 发光二极管及其封装结构
CN103325702A (zh) * 2013-07-04 2013-09-25 北京京东方光电科技有限公司 芯片的绑定方法及芯片绑定结构
JP6678506B2 (ja) * 2016-04-28 2020-04-08 株式会社アムコー・テクノロジー・ジャパン 半導体パッケージ及び半導体パッケージの製造方法
CN110349847B (zh) * 2018-04-08 2022-11-04 上海新微技术研发中心有限公司 一种通过键合材料进行键合的方法和键合结构
US11778293B2 (en) * 2019-09-02 2023-10-03 Canon Kabushiki Kaisha Mounting substrate to which image sensor is mounted, sensor package and manufacturing method thereof
KR20210058165A (ko) * 2019-11-13 2021-05-24 삼성전자주식회사 반도체 패키지
JP2022125682A (ja) * 2021-02-17 2022-08-29 レノボ・シンガポール・プライベート・リミテッド 電子基板および電子機器
CN113038698B (zh) * 2021-03-08 2022-09-09 京东方科技集团股份有限公司 柔性电路板、显示面板、制备方法和显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0451144U (ja) * 1990-09-03 1992-04-30
JP2004214344A (ja) * 2002-12-27 2004-07-29 Nec Kansai Ltd 固体撮像装置
JP2004266016A (ja) * 2003-02-28 2004-09-24 Seiko Epson Corp 半導体装置、半導体装置の製造方法、及び半導体基板
JP2004289083A (ja) * 2003-03-25 2004-10-14 Matsushita Electric Ind Co Ltd 電子部品実装用の基板および電子部品実装方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0451144A (ja) 1990-06-19 1992-02-19 Toray Ind Inc インドメチレン色素系記録材料
JP3233535B2 (ja) 1994-08-15 2001-11-26 株式会社東芝 半導体装置及びその製造方法
JP2858569B2 (ja) * 1996-11-25 1999-02-17 日本電気株式会社 チップ型デバイスの実装方法及びその実装方法により製造するデバイス
JPH10270496A (ja) * 1997-03-27 1998-10-09 Hitachi Ltd 電子装置、情報処理装置、半導体装置並びに半導体チップの実装方法
US6288451B1 (en) 1998-06-24 2001-09-11 Vanguard International Semiconductor Corporation Flip-chip package utilizing a printed circuit board having a roughened surface for increasing bond strength
JP2000165047A (ja) * 1998-11-26 2000-06-16 Nippon Carbide Ind Co Inc プリント配線板の製造方法
JP2000188362A (ja) 1998-12-21 2000-07-04 Kyocera Corp 半導体素子の実装構造
JP2001035886A (ja) 1999-07-23 2001-02-09 Nec Corp 半導体装置及びその製造方法
US6391683B1 (en) 2000-06-21 2002-05-21 Siliconware Precision Industries Co., Ltd. Flip-chip semiconductor package structure and process for fabricating the same
JP2002134558A (ja) 2000-10-25 2002-05-10 Toshiba Corp 半導体装置及びその製造方法
JP3764074B2 (ja) * 2001-08-03 2006-04-05 株式会社日立製作所 電子機器の製造方法および加工システム
JP4963148B2 (ja) * 2001-09-18 2012-06-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2003347460A (ja) 2002-05-28 2003-12-05 Kyocera Corp 電子装置
TWI315094B (en) 2003-04-25 2009-09-21 Advanced Semiconductor Eng Flip chip package
JP2004349399A (ja) 2003-05-21 2004-12-09 Nec Corp 部品実装基板
JP2005109037A (ja) * 2003-09-29 2005-04-21 Sanyo Electric Co Ltd 半導体装置
US6939751B2 (en) 2003-10-22 2005-09-06 International Business Machines Corporation Method and manufacture of thin silicon on insulator (SOI) with recessed channel
US7235431B2 (en) * 2004-09-02 2007-06-26 Micron Technology, Inc. Methods for packaging a plurality of semiconductor dice using a flowable dielectric material
US7148560B2 (en) 2005-01-25 2006-12-12 Taiwan Semiconductor Manufacturing Co., Ltd. IC chip package structure and underfill process
JP4551255B2 (ja) * 2005-03-31 2010-09-22 ルネサスエレクトロニクス株式会社 半導体装置
JP4760361B2 (ja) 2005-12-20 2011-08-31 ソニー株式会社 半導体装置
JP2007189005A (ja) 2006-01-12 2007-07-26 Sharp Corp 半導体装置の実装構造

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0451144U (ja) * 1990-09-03 1992-04-30
JP2004214344A (ja) * 2002-12-27 2004-07-29 Nec Kansai Ltd 固体撮像装置
JP2004266016A (ja) * 2003-02-28 2004-09-24 Seiko Epson Corp 半導体装置、半導体装置の製造方法、及び半導体基板
JP2004289083A (ja) * 2003-03-25 2004-10-14 Matsushita Electric Ind Co Ltd 電子部品実装用の基板および電子部品実装方法

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187735A (ja) * 2010-03-09 2011-09-22 Toshiba Corp 半導体発光装置および半導体発光装置の製造方法
JP2012028457A (ja) * 2010-07-21 2012-02-09 Murata Mfg Co Ltd セラミック電子部品及び配線基板
US8754335B2 (en) 2010-07-21 2014-06-17 Murata Manufacturing Co., Ltd. Ceramic electronic component and wiring board
JP2013537365A (ja) * 2010-09-09 2013-09-30 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド ポリマー充填剤溝を有する半導体チップデバイス
JP2017098508A (ja) * 2015-11-27 2017-06-01 富士電機株式会社 半導体装置
JP2017120800A (ja) * 2015-12-28 2017-07-06 富士通株式会社 半導体素子、半導体素子の製造方法及び電子機器
JP2017152484A (ja) * 2016-02-23 2017-08-31 京セラ株式会社 配線基板
US10910289B2 (en) 2016-10-21 2021-02-02 Sony Semiconductor Solutions Corporation Electronic substrate and electronic apparatus
WO2018074581A1 (ja) * 2016-10-21 2018-04-26 ソニーセミコンダクタソリューションズ株式会社 電子基板、および電子装置
US11676929B2 (en) 2016-10-21 2023-06-13 Sony Semiconductor Solutions Corporation Electronic substrate and electronic apparatus
JP2018113301A (ja) * 2017-01-10 2018-07-19 トヨタ自動車株式会社 半導体装置とその製造方法
US20220254738A1 (en) * 2017-10-30 2022-08-11 Mitsubishi Electric Corporation Power semiconductor device and manufacturing method for power semiconductor device
US11842968B2 (en) * 2017-10-30 2023-12-12 Mitsubishi Electric Corporation Power semiconductor device and substrate with dimple region
WO2020003838A1 (ja) * 2018-06-27 2020-01-02 京セラ株式会社 接着構造、撮像装置、および移動体
JP2020005104A (ja) * 2018-06-27 2020-01-09 京セラ株式会社 接着構造、撮像装置、および移動体
US11597331B2 (en) 2018-06-27 2023-03-07 Kyocera Corporation Bonded structure, imaging apparatus, and moveable body
JP2021009938A (ja) * 2019-07-01 2021-01-28 新光電気工業株式会社 配線基板、接合型配線基板及び配線基板の製造方法
JP7321009B2 (ja) 2019-07-01 2023-08-04 新光電気工業株式会社 配線基板、接合型配線基板及び配線基板の製造方法

Also Published As

Publication number Publication date
US20100025847A1 (en) 2010-02-04
JP5039058B2 (ja) 2012-10-03
CN101578695B (zh) 2012-06-13
JPWO2008078746A1 (ja) 2010-04-30
CN101578695A (zh) 2009-11-11
US8110933B2 (en) 2012-02-07

Similar Documents

Publication Publication Date Title
WO2008078746A1 (ja) 半導体素子の実装構造体及び半導体素子の実装方法
WO2008123172A1 (ja) ヒートスプレッダモジュール、ヒートシンク及びそれらの製法
WO2009001564A1 (ja) 半導体素子の実装構造体及びその製造方法、半導体素子の実装方法、並びに加圧ツール
US7485496B2 (en) Semiconductor device package with a heat sink and method for fabricating the same
WO2009142391A3 (ko) 발광소자 패키지 및 그 제조방법
SG160403A1 (en) Semiconductor device
WO2009010585A3 (en) Method for producing an emitter structure and emitter structures resulting therefrom
WO2008105069A1 (ja) プリント基板ユニットおよび半導体パッケージ
WO2006076101A3 (en) A method to manufacture a universal footprint for a package with exposed chip
TW200639910A (en) Flip-chip semiconductor device
WO2008011688A3 (en) GROWTH OF MONOCRYSTALLINE GeN ON A SUBSTRATE
TWI690042B (zh) 用於保護半導體晶粒之封裝加強件
WO2006071782A3 (en) Heat shield for engine mount
WO2009057620A1 (ja) 圧力センサ及びその製造方法
JP2012164763A (ja) ヒートシンク付き半導体パッケージの製造方法及び当該ヒートシンク
TW200701374A (en) Semiconductor device and manufacturing method thereof
WO2011129548A3 (en) Substrate assembly for crystal growth and fabricating method for light emitting device using the same
WO2008091305A3 (en) Thermal barrier coating system for a turbine airfoil usable in a turbine engine
WO2009034454A3 (en) Semiconductor device
ATE478973T1 (de) Zylindrisches pvd-target
WO2008117434A1 (ja) 半導体部品および半導体部品の製造方法
JP6449551B2 (ja) 真空ポンプの制御装置とこれを備えた真空ポンプ
TW200717668A (en) Semiconductor device, method for manufacturing such semiconductor device and substrate for such semiconductor device
JP2006287227A5 (ja)
WO2008060389A3 (en) Sensor device package having thermally compliant die pad

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780048553.2

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07860073

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2008551119

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 12521020

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07860073

Country of ref document: EP

Kind code of ref document: A1