CN104112806A - 发光二极管及其封装结构 - Google Patents

发光二极管及其封装结构 Download PDF

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CN104112806A
CN104112806A CN201310131330.XA CN201310131330A CN104112806A CN 104112806 A CN104112806 A CN 104112806A CN 201310131330 A CN201310131330 A CN 201310131330A CN 104112806 A CN104112806 A CN 104112806A
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electrode
emitting diode
led crystal
crystal particle
bonding adhesive
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林厚德
张耀祖
张超雄
陈滨全
陈隆欣
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Priority to TW102113781A priority patent/TWI497772B/zh
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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Abstract

一种发光二极管，包括一种封装结构以及发光二极管晶粒，该封装结构包括第一电极以及第二电极，该第一电极的第一表面包含固晶部以及引流部，该引流部环绕该固晶部该固晶部用于承载固晶胶以固定发光二极管晶粒，该引流部用于在发光二极管晶粒被压向固晶胶时对发光二极管晶粒四周的固晶胶进行引流，以阻止固定胶堆积在发光二极管晶粒四周，该发光二极管晶粒通过固晶胶设置于该第一电极上并在该第一电极的第一表面上形成一岛状结构，该固晶胶部分收容在该引流部内。当发光二极管晶粒通过固晶胶固定于该固晶部上时，该固晶胶流向该引流部，从而避免固晶胶在发光二极管晶粒四周积聚，进而保证该发光二极管晶粒的正常发光。本发明还提供一种封装结构。

Description

发光二极管及其封装结构
技术领域
本发明涉及一种发光元件，尤其是一种发光二极管及其封装结构。
背景技术
LED（Light-emitting diode, 发光二极管）产业是近几年最受瞩目的产业之一，发展至今，LED产品已具有节能、高效率、反应时间快、寿命周期时间长、且不含汞、具有环保效益等优点，因此被认为是新世代绿色节能照明的最佳光源。
在制造发光二极管过程中，业界通常使用固晶胶将发光二极管晶粒设置于基板上。然而，当发光二极管晶粒透过固晶胶固定的过程中，因为固晶胶的软性变形，该发光二极管晶粒的底部会陷入至固晶胶的包围中。由于发光二极管晶粒的底部被固晶胶遮蔽，导致来自发光二极管晶粒的部分光线会被固晶胶遮蔽而影响发光二极管整体的出光效率。
发明内容
有鉴于此，有必要提供一种可以避免上述问题的发光二极管。
一种封装结构，用于封装发光二极管晶粒，包括第一电极以及第二电极，该第一电极的第一表面包含固晶部以及引流部，该引流部环绕该固晶部该固晶部用于承载固晶胶以固定发光二极管晶粒，该引流部用于在发光二极管晶粒被压向固晶胶时对发光二极管晶粒四周的固晶胶进行引流，以阻止固定胶堆积在发光二极管晶粒四周。
一种发光二极管，包括一种封装结构以及发光二极管晶粒，该封装结构包括第一电极以及第二电极，该第一电极的第一表面包含固晶部以及引流部，该引流部环绕该固晶部该固晶部用于承载固晶胶以固定发光二极管晶粒，该引流部用于在发光二极管晶粒被压向固晶胶时对发光二极管晶粒四周的固晶胶进行引流，以阻止固定胶堆积在发光二极管晶粒四周，该发光二极管晶粒通过固晶胶设置于该第一电极上并在该第一电极的第一表面上形成一岛状结构，该固晶胶部分收容在该引流部内。
由于该第一电极的第一表面包括引流部，且该引流部环绕该固晶部。当发光二极管晶粒通过固晶胶固定于该固晶部上时，该固晶胶流向该引流部，从而避免固晶胶在发光二极管晶粒四周积聚，进而保证该发光二极管晶粒的正常发光。
附图说明
图1是本发明的封装结构的切面示意图。
图2是本发明的封装结构的俯视示意图。
图3是本发明的发光二极管的切面示意图。
图4是本发明的发光二极管的俯视示意图。
主要元件符号说明
10 基板
21 第一电极
210、220 第一表面
211 引流部
212 打线区
213 固晶区
22 第二电极
30 反射杯
40 发光二极管晶粒
50 齐纳二极管
60 导线
70 封装层
80 固晶胶
100 封装结构
200 发光二极管
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
图1-2示出了本发明的封装结构100的示意图。该封装结构100用于封装发光二极管200（参阅图3-4）。该封装结构100包括基板10以及嵌设于该基板10中的第一电极21以及第二电极22。该基板10由电磁兼容性（EMC/Electrical Magnetic Compatibility）材料、尼龙PPA（Polyphthalamide）材料、或片状模塑材料（SMC/Sheet Molding Compound）制成。该第一电极21与该第二电极22优选为金属电极。
该第一电极21具有一第一表面210，该第二电极22具有一第一表面220。该第一电极21具有一第一表面210，该第二电极22具有一第一表面220。该第一电极21的第一表面210与该第二电极22的第一表面220在同一水平面上。在图1中，该第一电极21的第一表面210以及该第二电极22的第一表面220分别为第一电极21、第二电极22的上表面。该第一电极21的第一表面210的面积大于该第二电极22的第一表面220的面积。该基板10包括一位于该第一电极21的第一表面210与第二电极22的第一表面220上、并环绕第一电极21和第二电极22的基板上部，本实施例中，将该基板上部定义为反射杯30。
该第一电极21的第一表面210包括固晶部213、打线部212以及引流部211。该引流部211隔开该固晶部213与打线部212。该反射杯30围绕该固晶部213、打线部212以及引流部211。在本实施例中，该引流部211为一自该第一电极21的第一表面210向下凹陷沟槽并且环绕该固晶部213。该固晶部213与该打线部212在同一水平面上。该引流部211深度小于该第一电极21的厚度。优选地，该引流部211的深度接近于该第一电极21的厚度但不贯穿该第一电极21。例如，当该第一电极21只有0.2mm（毫米）时，该引流部211的深度的取值在小于0.2mm的范围内。当该第一电极21有0.25mm时，该引流部211的深度的取值在小于0.25mm的范围内。优选地，该固晶部213位于该反射杯30围设的区域的中间位置。
图3-4示出了本发明的发光二极管200的示意图。该发光二极管200的发光二极管晶粒40采用上述封装结构100进行封装。在该反射杯30内，发光二极管晶粒40通过固晶胶80设置于该第一电极21的第一表面210上，并在该第一电极21的第一表面210上形成一岛状结构。可以理解地，该发光二极管200进一步包括一齐纳二极管50设置于该第二电极22的第一表面220上，并通过导线60电连接至该第一电极21。该齐纳二极管50与该发光二极管晶粒40反向并联，避免发光二极管晶粒40受到静电脉冲放电的破坏。该反射杯30围绕该发光二极管晶粒40以及齐纳二极管50。该发光二极管晶粒40通过导线60分别电连接至该第一电极21的第一表面210与第二电极22的第一表面220。该发光二极管200还包括覆盖该发光二极管晶粒40的封装层70。可以理解地，该反射杯30不限定于必须由该基板10的上部构成，也可以是与基板10分离制造而后续组装至一起的两个不同元件。该封装层70可包含荧光转换物质或/及扩散粉。
当发光二极管晶粒40装设于该第一电极21上时，用于固定该发光二极管晶粒40的固晶胶80在被发光二极管晶粒40的挤压之后受力变形。该固晶胶80受力时，除受到该发光二极管晶粒40所施加的外力之外，其四周没有任何阻力。从而，该固晶胶80以一定速度（该速度受其粘度大小影响）向四周扩散，也即是向远离该发光二极管晶粒40的方向扩散，也即是向该引流部211扩散。当蔓延至该引流部211时，该固晶胶80流入该引流部211。当部分固晶胶80流入该引流部211后，固晶胶80的其余部分继续向该引流部211蔓延，从而避免固晶胶80在该固晶部213上积聚。由于该引流部211设置于该固晶部213与打线部212之间并且该引流部211具有一定的深度，因此可以完全容纳溢出的固晶胶80。优选地，该发光二极管晶粒40的底面积接近且小于该固晶部213的面积，以使该固晶胶80在变形时能更为顺利地流入至该引流部211内。
由于固晶胶80不至于在该发光二极管晶粒40附近积聚，因此不会遮挡该发光二极管晶粒40发出的光线，从而保证该发光二极管晶粒40的正常出光。此外，由于该第一电极21的第一表面210的面积相对较大，则该发光二极管晶粒40可尽可能地设置于该反射杯30的中间部分，以至于从该发光二极管晶粒40出射的光线在各个方向上与反射杯30之间的光程大致相等，使各个方向上的出光更为均匀。
需要说明的是，引流部211不局限为凹槽，也可以为其他引流结构，只要其能够在发光二极管晶粒被压向固晶胶时对发光二极管晶粒四周的固晶胶进行引流，以阻止固定胶堆积在发光二极管晶粒四周即可。
应该指出，上述实施方式仅为本发明的较佳实施方式，本领域技术人员还可在本发明精神内做其它变化。这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。

Claims (10)

1.一种封装结构，用于封装发光二极管晶粒，包括第一电极以及第二电极，其特征在于：该第一电极的第一表面包含固晶部以及引流部，该引流部环绕该固晶部该固晶部用于承载固晶胶以固定发光二极管晶粒，该引流部用于在发光二极管晶粒被压向固晶胶时对发光二极管晶粒四周的固晶胶进行引流，以阻止固定胶堆积在发光二极管晶粒四周。
2.如权利要求1所述的封装结构，其特征在于：该引流部为一自该第一电极的第一表面向下凹陷的沟槽，且该沟槽的凹陷深度比该第一电极的厚度小。
3.如权利要求2所述的封装结构，其特征在于：该第二电极具有一第一表面，该第一电极的第一表面与该第二电极的第一表面处于同一水平面，该第一电极的第一表面的面积大于该第二电极的第一表面的面积。
4.如权利要求2所述的封装结构，其特征在于：还包括基板，该第一电极与该第二电极嵌设于该基板中，该第一电极与该第二电极的第一表面上还设有反射杯，该反射杯围绕该第一电极的固晶部以及引流部。
5.如权利要求4所述的封装结构，其特征在于：该固晶部位于该反射杯所围区域的中间位置。
6.一种发光二极管，包括封装结构以及发光二极管晶粒，其特征在于：该封装结构为如权利要求1-5任意一项所述的封装结构，该发光二极管晶粒通过固晶胶设置于该第一电极上并在该第一电极的第一表面上形成一岛状结构，该固晶胶部分收容在该引流部内。
7.如权利要求6所述的发光二极管，其特征在于：该发光二极管晶粒的底面积小于该固晶部的面积。
8.如权利要求6所述的发光二极管，其特征在于：还包括设置于该第二电极上的齐纳二极管，该齐纳二极管通过固晶胶电连接该第二电极，通过导线电连接该第一电极。
9.如权利要求6所述的发光二极管，其特征在于：还包括封装层覆盖该发光二极管晶粒。
10.如权利要求8所述的发光二极管，其特征在于：该封装层包含荧光转换物质或/及扩散粉。
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