CN102479907A - 发光二极管封装结构 - Google Patents
发光二极管封装结构 Download PDFInfo
- Publication number
- CN102479907A CN102479907A CN2010105644384A CN201010564438A CN102479907A CN 102479907 A CN102479907 A CN 102479907A CN 2010105644384 A CN2010105644384 A CN 2010105644384A CN 201010564438 A CN201010564438 A CN 201010564438A CN 102479907 A CN102479907 A CN 102479907A
- Authority
- CN
- China
- Prior art keywords
- conducting block
- emitting diode
- electrode
- groove
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005538 encapsulation Methods 0.000 title abstract 4
- 239000000463 material Substances 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000005452 bending Methods 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (8)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010564438.4A CN102479907B (zh) | 2010-11-30 | 2010-11-30 | 发光二极管封装结构 |
US13/186,483 US8519420B2 (en) | 2010-11-30 | 2011-07-20 | Light emitting diode package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010564438.4A CN102479907B (zh) | 2010-11-30 | 2010-11-30 | 发光二极管封装结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102479907A true CN102479907A (zh) | 2012-05-30 |
CN102479907B CN102479907B (zh) | 2015-01-07 |
Family
ID=46092457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010564438.4A Active CN102479907B (zh) | 2010-11-30 | 2010-11-30 | 发光二极管封装结构 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8519420B2 (zh) |
CN (1) | CN102479907B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105591010A (zh) * | 2014-10-24 | 2016-05-18 | 比亚迪股份有限公司 | Led芯片、led支架以及led芯片的封装方法 |
CN109119396A (zh) * | 2018-09-14 | 2019-01-01 | 上海凯虹科技电子有限公司 | 引线框架及采用该引线框架的封装体 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102007404B1 (ko) * | 2012-12-14 | 2019-08-05 | 엘지이노텍 주식회사 | 발광소자 패키지 |
US10810932B2 (en) * | 2018-10-02 | 2020-10-20 | Sct Ltd. | Molded LED display module and method of making thererof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050029638A1 (en) * | 2000-04-27 | 2005-02-10 | Ahn Byung Hoon | Leadframe and semiconductor package made using the leadframe |
CN101090144A (zh) * | 2006-06-14 | 2007-12-19 | 宏齐科技股份有限公司 | 高功率发光元件封装的工艺及其结构 |
CN101465395A (zh) * | 2007-12-21 | 2009-06-24 | 富士迈半导体精密工业(上海)有限公司 | 发光二极管 |
CN101488546A (zh) * | 2007-10-31 | 2009-07-22 | 夏普株式会社 | 芯片部件式led及其制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060043382A1 (en) | 2003-02-07 | 2006-03-02 | Nobuyuki Matsui | Metal base wiring board for retaining light emitting elements, light emitting source, lightning apparatus, and display apparatus |
JP4359195B2 (ja) | 2004-06-11 | 2009-11-04 | 株式会社東芝 | 半導体発光装置及びその製造方法並びに半導体発光ユニット |
US7985980B2 (en) | 2007-10-31 | 2011-07-26 | Sharp Kabushiki Kaisha | Chip-type LED and method for manufacturing the same |
KR100998233B1 (ko) | 2007-12-03 | 2010-12-07 | 서울반도체 주식회사 | 슬림형 led 패키지 |
-
2010
- 2010-11-30 CN CN201010564438.4A patent/CN102479907B/zh active Active
-
2011
- 2011-07-20 US US13/186,483 patent/US8519420B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050029638A1 (en) * | 2000-04-27 | 2005-02-10 | Ahn Byung Hoon | Leadframe and semiconductor package made using the leadframe |
CN101090144A (zh) * | 2006-06-14 | 2007-12-19 | 宏齐科技股份有限公司 | 高功率发光元件封装的工艺及其结构 |
CN101488546A (zh) * | 2007-10-31 | 2009-07-22 | 夏普株式会社 | 芯片部件式led及其制造方法 |
CN101465395A (zh) * | 2007-12-21 | 2009-06-24 | 富士迈半导体精密工业(上海)有限公司 | 发光二极管 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105591010A (zh) * | 2014-10-24 | 2016-05-18 | 比亚迪股份有限公司 | Led芯片、led支架以及led芯片的封装方法 |
CN105591010B (zh) * | 2014-10-24 | 2018-12-21 | 比亚迪股份有限公司 | Led芯片、led支架以及led芯片的封装方法 |
CN109119396A (zh) * | 2018-09-14 | 2019-01-01 | 上海凯虹科技电子有限公司 | 引线框架及采用该引线框架的封装体 |
Also Published As
Publication number | Publication date |
---|---|
US20120132942A1 (en) | 2012-05-31 |
US8519420B2 (en) | 2013-08-27 |
CN102479907B (zh) | 2015-01-07 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201123 Address after: Qiuzhen building, Southeast campus, Changshu Institute of technology, No.99 Hushan Road, Changshu Southeast Economic Development Zone, Suzhou City, Jiangsu Province Patentee after: Changshu southeast high tech Venture Service Co., Ltd Address before: 518109, Shenzhen, Guangdong, Baoan District province Longhua Street tenth Pine Industrial Zone, No. two, East Ring Road, No. two Patentee before: ZHANJING Technology (Shenzhen) Co.,Ltd. Patentee before: Rongchuang Energy Technology Co.,Ltd. |
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TR01 | Transfer of patent right |