JP2016092419A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2016092419A JP2016092419A JP2015212918A JP2015212918A JP2016092419A JP 2016092419 A JP2016092419 A JP 2016092419A JP 2015212918 A JP2015212918 A JP 2015212918A JP 2015212918 A JP2015212918 A JP 2015212918A JP 2016092419 A JP2016092419 A JP 2016092419A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
【解決手段】実施形態によれば、電極を有する発光素子と、導電部材と、発光素子とを接続し、金及び銀を含むワイヤと、発光素子とワイヤとを被覆する封止部材と、を備え、ワイヤは、発光素子の電極上に設けられたボール部と、その上に、長さが50μm〜90μmの再結晶領域と、を有し、封止部材は、ボール部の上から、封止部材の上面までの最短距離が、90μm〜230μmである。
【選択図】図1C
Description
導電部材は、所定の形状にパターニングされた板状の金属部材からなる。導電部材は、母材である金属板と、その表面に形成されたメッキと、を有する。
発光素子は、通電により発光する発光層を備えた半導体層と、半導体層に通電するための電極と、を備える。
半導体層を構成する第1半導体層、発光層及び第2半導体層としては、特に限定されるものではなく、例えば、InXAlYGa1−X−YN(0≦X、0≦Y、X+Y≦1)等の窒化物系化合物半導体が好適に用いられる。これらの窒化物半導体層は、それぞれ単層構造でもよいが、組成及び膜厚等の異なる層の積層構造、超格子構造等であってもよい。特に、発光層は、量子効果が生ずる薄膜を積層した単一量子井戸又は多重量子井戸で構造であることが好ましい。
ワイヤは、導電部材と、発光素子とを接続する導電部材であり、金及び銀を含む。ワイヤは、図1Cに示すように、発光素子の電極と接続されるボール部32と、ボール部32の直上の再結晶領域34と、を有する。尚、ボール部も溶融されることで再結晶される部分ではあるが、ここでは、ボール部以外であって、ボール部から延伸した部分に形成されている部分のみを再結晶領域という。
い。
封止部材は、発光素子、保護素子、ワイヤなどの電子部品を、塵芥、水分、外力などから保護する部材である。封止部材は、樹脂を主な構成部材として備えており、内包する上記の電子部品に比して線膨張係数が大きい部材である。そのため、発光装置の製造時、あるいは駆動時に、通電等の発熱により、封止部材が収縮する際に生じる応力は、内包する電子部品に大きく影響を与える。特に、ワイヤにかかる応力が大きくなり易いため、本実施形態では、ワイヤの周りの封止部材の厚みを特定の範囲とすることで、ワイヤにかかる応力を緩和している。詳細には、ワイヤのボール部の上から、封止部材の上面までの距離(最短距離)が、90μm〜230μmとしている。ボール部の上に形成される再結晶領域は、通常領域と性質が異なる領域であり、それらの境界は、応力による影響を受けることで損傷し易い。そのため、ワイヤ周囲の封止部材の量を少なくして応力による影響を低減することで、ワイヤの損傷(破断)を低減することができる。
少なくとも正負一対の電極となる導電部材は、樹脂部材によって一体的に保持されていてもよい。尚、樹脂部材と導電部材とをまとめて「樹脂パッケージ」とも称する。
発光素子は、導電部材又は樹脂部材の上に、接合部材を介して固定されている。
図1A、図1B、図1Cは、実施形態1に係る発光装置の構成を例示する模式図である。図1Aは、斜視図、図1Bは断面図、図1Cは、図1Bの部分拡大図である。
図2A、図2B、図2Cは、実施形態2に係る発光装置の構成を例示する模式図である。図2Aは、斜視図、図2Bは断面図、図2Cは、図2Bの部分拡大図である。実施形態2では、1つの発光装置2に1つの凹部を有し、その内部に2つの発光素子20が実装されている点が実施形態1と異なる。また、実施形態2では、2つの導電部材10の上に、それぞれ1つの発光素子20が載置されている。ワイヤ30は、導電部材10と発光素子20とを接続させるほか、発光素子同士の間を接合している。
10…導電部材
20…発光素子
22…半導体層
24…電極
30…合金ワイヤ
32…ボール部
34…再結晶領域
40…封止部材
50…樹脂部材
50a…突出部
Claims (12)
- 導電部材と、
電極を有する発光素子と、
前記導電部材と、前記発光素子とを接続し、金及び銀を含むワイヤと、
前記発光素子と前記ワイヤとを被覆する封止部材と、
を備え、
前記ワイヤは、前記発光素子の電極上に設けられたボール部と、その上に、長さが50μm〜90μmの再結晶領域と、を有し、
前記封止部材は、前記ボール部の上から、該封止部材の上面までの最短距離が、90μm〜230μmである、
ことを特徴とする発光装置。 - 前記ワイヤは、直径が18μm以上30μm以下である、請求項1に記載の発光装置。
- 前記ワイヤは、ループ高さが70μm〜150μmである、請求項1又は2に記載の発光装置。
- 前記ワイヤは、金が15質量%以上25質量%以下である、請求項1〜3のいずれか1項に記載の発光装置。
- 前記ワイヤは、金が2質量%以上15質量%未満である、請求項1〜3のいずれか1項に記載の発光装置。
- 前記封止部材は、線膨張係数が3×10-6以上350×10-6以下である請求項1〜5のいずれか1項に記載の発光装置。
- 前記封止部材は、シリコーン樹脂組成物を主成分とする請求項1〜6のいずれか1項に記載の発光装置。
- 前記封止部材は、上面が凹面である請求項1〜7のいずれか1項に記載の発光装置。
- 前記ワイヤの再結晶領域は、前記封止部材の上面の最も低い部分からずれて配置される、請求項1〜8のいずれか1項に記載の発光装置。
- 前記封止部材は、蛍光体を5質量%以上120質量%以下の範囲で含有する請求項1〜9のいずれか1項に記載の発光装置。
- 前記蛍光体は、KSF系蛍光体を含む請求項10に記載の発光装置。
- 前記KSF系蛍光体は、前記封止部材中に20質量%以上100質量%以下含有される請求項9記載の発光装置。
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Cited By (2)
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JP2017212314A (ja) * | 2016-05-25 | 2017-11-30 | 日亜化学工業株式会社 | 発光装置 |
US10916522B2 (en) | 2017-09-27 | 2021-02-09 | Nichia Corporation | Semiconductor device and method for manufacturing same |
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JP6680239B2 (ja) * | 2017-02-20 | 2020-04-15 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP6870592B2 (ja) * | 2017-11-24 | 2021-05-12 | 豊田合成株式会社 | 発光装置 |
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JP2008251664A (ja) * | 2007-03-29 | 2008-10-16 | Toshiba Lighting & Technology Corp | 照明装置 |
JP2010045105A (ja) * | 2008-08-11 | 2010-02-25 | Stanley Electric Co Ltd | 半導体発光装置 |
JP2010171378A (ja) * | 2009-01-23 | 2010-08-05 | Junde Li | 合金線およびその製造方法 |
JP2012104814A (ja) * | 2010-10-15 | 2012-05-31 | Mitsubishi Chemicals Corp | 白色発光装置及び照明器具 |
JP2012164742A (ja) * | 2011-02-04 | 2012-08-30 | Showa Denko Kk | 照明装置および照明装置の製造方法 |
JP2013179273A (ja) * | 2012-01-31 | 2013-09-09 | Nichia Chem Ind Ltd | 発光装置 |
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JP2017212314A (ja) * | 2016-05-25 | 2017-11-30 | 日亜化学工業株式会社 | 発光装置 |
US10916522B2 (en) | 2017-09-27 | 2021-02-09 | Nichia Corporation | Semiconductor device and method for manufacturing same |
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JP2020123740A (ja) | 2020-08-13 |
JP6753051B2 (ja) | 2020-09-09 |
US20160126435A1 (en) | 2016-05-05 |
US9698328B2 (en) | 2017-07-04 |
JP6947995B2 (ja) | 2021-10-13 |
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