TWI513066B - 發光二極體封裝結構 - Google Patents
發光二極體封裝結構 Download PDFInfo
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- TWI513066B TWI513066B TW102112276A TW102112276A TWI513066B TW I513066 B TWI513066 B TW I513066B TW 102112276 A TW102112276 A TW 102112276A TW 102112276 A TW102112276 A TW 102112276A TW I513066 B TWI513066 B TW I513066B
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- emitting diode
- light emitting
- metal layer
- package substrate
- bump
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- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 27
- 230000003647 oxidation Effects 0.000 claims description 22
- 238000007254 oxidation reaction Methods 0.000 claims description 22
- 230000003064 anti-oxidating effect Effects 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 9
- 238000005538 encapsulation Methods 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000001746 injection moulding Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229920006336 epoxy molding compound Polymers 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Led Device Packages (AREA)
Description
本發明涉及一種半導體，尤其涉及一種發光二極體封裝結構。
發光二極體憑藉其高光效、低能耗、無污染等優點，已被應用於越來越多的場合之中，大有取代傳統光源的趨勢。
在應用到具體領域中之前，發光二極體晶粒還需要進行封裝，以保護發光二極體晶粒不受擠壓或者氧化，從而使發光二極體封裝結構獲得較高的發光效率及較長的使用壽命。
矽樹脂模塑化合物(Silicon Molding Compound，SMC)以及環氧模塑膠(Epoxy Molding Compound,EMC)常作為封裝材料應用於發光二極體封裝結構中。特別地，該矽樹脂模塑化合物較環氧模塑膠更耐高溫，故在發光二極體封裝結構中得到廣泛應用。但由於該矽樹脂模塑化合物或環氧模塑膠與金屬電極的密合度差，二者接合處會有空氣或水氣的滲入，容易導致內部電極氧化而影響發光二極體封裝元件的電性接觸變弱。
有鑒於此，有必要提供一種電性接觸較佳的發光二極體封裝結構。
一種發光二極體封裝結構，包括封裝基板、設置於封裝基板上的
發光二極體晶粒，所述封裝基板上設置電路結構，所述發光二極體晶粒具有分別與電路結構電連接的正電極和負電極，所述發光二極體晶粒上形成有與正、負電極的至少其中之一電連接的凸塊，所述電路結構上對應發光二極體晶粒的凸塊形成有防氧化金屬層，所述發光二極體晶粒的凸塊與電路結構上的防氧化金屬層電連接，其中所述電路結構的表面上形成至少一凹槽，所述防氧化金屬層位於所述至少一凹槽內並與所述封裝基板鄰接。
本發明中電路結構上對應於發光二極體晶粒的凸塊形成有防氧化金屬層，且該發光二極體晶粒藉由凸塊與電路結構上的防氧化金屬層電連接，這能有效提升發光二極體封裝結構的電性接觸性能。
10、10a‧‧‧封裝基板
19、19a‧‧‧電路結構
20、20a‧‧‧第一連接電極
21、21a‧‧‧第二連接電極
30、30a‧‧‧反射杯
40、40a、41‧‧‧防氧化金屬層
50、50a‧‧‧封裝層
60、60a‧‧‧發光二極體晶粒
100、100a‧‧‧發光二極體封裝結構
201、211‧‧‧上表面
202、212‧‧‧下表面
301、301a‧‧‧容置槽
601、601a‧‧‧第一凸塊
602‧‧‧第二凸塊
603‧‧‧導線
2011‧‧‧第一凹槽
2111‧‧‧第二凹槽
圖1係本發明第一實施例的發光二極體封裝結構的剖面示意圖。
圖2係圖1中所示發光二極體封裝結構的俯視示意圖。
圖3係本發明第二實施例的發光二極體封裝結構的剖面示意圖。
請同時參考圖1和圖2，係本發明第一實施例的發光二極體封裝結構100，其包括封裝基板10、設置於封裝基板10上的發光二極體晶粒60、位於封裝基板10上並圍繞發光二極體晶粒60設置的反射杯30和設置於封裝基板10上並包覆發光二極體晶粒60的封裝層50。
上述封裝基板10可由矽樹脂模塑化合物或環氧模塑膠中任意一種與玻璃纖維壓合製成。而反射杯30以及封裝層50的材質均採用矽
樹脂模塑化合物或環氧模塑膠。在本實施例中，該反射杯30與該封裝基板10藉由注塑的方式一體形成。
該封裝基板10上設置有電路結構19。該電路結構19包括間隔設置的第一連接電極20和第二連接電極21。該第一連接電極20和第二連接電極21均係縱長的塊體。該第一連接電極20和第二連接電極21的剖面呈倒置的“凸”字形。該第一連接電極20和第二連接電極21由具有良好導熱以及導電性能的材質構成，比如銅、鋁。
該發光二極體晶粒60的正電極(N型電極)和負電極(P型電極)上分別形成有第一凸塊601和第二凸塊602。該第一連接電極20和第二連接電極21對應該發光二極體晶粒60的第一凸塊601和第二凸塊602分別形成防氧化金屬層40、41。該發光二極體晶粒60的第一凸塊601和第二凸塊602對應與第一連接電極20上的防氧化金屬層40和第二連接電極21上的防氧化金屬層41分別接觸形成電連接。
該第一凸塊601和第二凸塊602的材質係金或焊錫。該第一凸塊601和第二凸塊602藉由共晶焊接方式結合於對應的防氧化金屬層40、41上。
該防氧化金屬層40、41的材質係金、鎳或防氧化的合金中任意一種。該防氧化金屬層40、41設置於電路結構19的表面上(未標示)並鄰近該電路結構19與封裝基板10的接合處。
在本實施例中，該第一連接電極20包括相對設置的上表面201和下表面202。該第一連接電極20的上表面201上形成一第一凹槽2011。該防氧化金屬層40形成於該第一凹槽2011內並填滿該第一
凹槽2011，該防氧化金屬層40的與第一凸塊601接觸的外表面(未標示)與該第一連接電極20的上表面201平齊。相同地，該第二連接電極21包括相對設置的上表面211和下表面212。該第二連接電極21的上表面211上形成以第二凹槽2111。該防氧化金屬層41形成於該第二凹槽2111內並填滿該第二凹槽2111。該防氧化金屬層41的與第二凸塊602接觸的外表面(未標示)與該第二連接電極21的上表面211平齊。
可以理解地，在其他實施例中，該防氧化金屬層40、41可直接藉由電鍍或蒸鍍方式分別形成於第一連接電極20的上表面201和第二連接電極21的上表面211上。
該反射杯30具有一容納發光二極體晶粒60的容置槽301。發光二極體晶粒60位於該容置槽301內並藉由覆晶的方式安裝於封裝基板10上。
該封裝層50內包含螢光粉(圖未示)用於轉換發光二極體晶粒60發射的光線。該螢光粉係石榴石基螢光粉、矽酸鹽基螢光粉、原矽酸鹽基螢光粉、硫化物基螢光粉、硫代鎵酸鹽基螢光粉或氮化物基螢光粉中至少一種。
請參考圖3，與第一實施例所述的發光二極體封裝結構100不同地，本發明第二實施例的發光二極體封裝結構100a中，該發光二極體晶粒60a的正電極(N型電極)和負電極(P型電極)分別位於發光二極體晶粒60a的相對兩側。該發光二極體晶粒60a的正電極和負電極的其中之一上形成第一凸塊601a並藉由該第一凸塊601a與第一連接電極20a上的防氧化金屬層40接觸電連接。該發光二極體晶粒60a的另一電極藉由導線603與第二連接電極21a電連接
。
與習知技藝相比，本發明第一實施例中該封裝基板10上的電路結構19上對應於發光二極體晶粒60的第一凸塊601和第二凸塊602形成有防氧化金屬層40、41，且該發光二極體晶粒60藉由第一凸塊601和第二凸塊602與第一連接電極31上的防氧化金屬層40和第二連接電極21上的防氧化金屬層41分別接觸電連接，這能有效提升發光二極體封裝結構的電性接觸性能。
本發明第二實施例中該封裝基板10a的電路結構19a上對應於發光二極體晶粒60a的第一凸塊601a形成有防氧化金屬層40a，且該發光二極體晶粒60a藉由第一凸塊601a與第一連接電極31a上的防氧化金屬層40a接觸電連接，這能有效提升發光二極體封裝結構的電性接觸性能。
綜上所述，本發明符合發明專利要件，爰依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，舉凡熟悉本案技藝之人士，在爰依本發明精神所作之等效修飾或變化，皆應涵蓋於以下之申請專利範圍內。
10‧‧‧封裝基板
20‧‧‧第一連接電極
21‧‧‧第二連接電極
30‧‧‧反射杯
40、41‧‧‧防氧化金屬層
50‧‧‧封裝層
60‧‧‧發光二極體晶粒
100‧‧‧發光二極體封裝結構
201、211‧‧‧上表面
202、212‧‧‧下表面
301‧‧‧容置槽
601‧‧‧第一凸塊
602‧‧‧第二凸塊
2011‧‧‧第一凹槽
2111‧‧‧第二凹槽
Claims (8)
- 一種發光二極體封裝結構，包括封裝基板、設置於封裝基板上的發光二極體晶粒，所述封裝基板上設置電路結構，所述發光二極體晶粒具有分別與電路結構電連接的正電極和負電極，其中所述發光二極體晶粒上形成有與正、負電極的至少其中之一電連接的凸塊，所述電路結構上對應發光二極體晶粒的凸塊形成有防氧化金屬層，所述發光二極體晶粒的凸塊與電路結構上的防氧化金屬層電連接，其中所述電路結構的表面上形成至少一凹槽，所述防氧化金屬層位於所述至少一凹槽內並與所述封裝基板鄰接。
- 如申請專利範圍第1項所述的發光二極體封裝結構，其中所述發光二極體晶粒的正電極和負電極的其中之一上形成所述凸塊並藉由所述凸塊與電路結構上的防氧化金屬層電連接，所述發光二極體晶粒的正電極和負電極的其中之另一藉由導線與電路結構電連接。
- 如申請專利範圍第1項所述的發光二極體封裝結構，其中所述發光二極體晶粒的正電極和負電極上分別形成所述凸塊，所述發光二極體晶粒藉由覆晶的方式安裝於封裝基板上，所述發光二極體晶粒正電極和負電極分別藉由所述凸塊與電路結構上的防氧化金屬層電連接。
- 如申請專利範圍第1項所述的發光二極體封裝結構，其中還包括形成於封裝基板上並環繞發光二極體晶粒的反射杯。
- 如申請專利範圍第4項所述的發光二極體封裝結構，其中所述反射杯與封裝基板藉由注塑的方式一體形成。
- 如申請專利範圍第1項所述的發光二極體封裝結構，其中所述防氧化金屬層係金或鎳。
- 如申請專利範圍第1項所述的發光二極體封裝結構，其中所述防氧化金屬層填滿該凹槽，所述防氧化金屬層的與凸塊接觸的外表面與所述封裝基板的上表面平齊。
- 如申請專利範圍第1項所述的發光二極體封裝結構，其中還包括設置於封裝基板上並覆蓋發光二極體晶粒的封裝層，所述封裝層內包含螢光粉用於轉換發光二極體晶粒發出的光線。
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| CN106952990A (zh) * | 2016-01-07 | 2017-07-14 | 深圳市斯迈得半导体有限公司 | 一种芯片级led封装装置及其制作工艺 |
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