CN103972372A - 发光二极管封装结构 - Google Patents
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Abstract
一种发光二极管封装结构，包括封装基板、设置于封装基板上的发光二极管晶粒，所述封装基板上设置电路结构，所述发光二极管晶粒具有分别与电路结构电连接的正电极和负电极，所述发光二极管晶粒上形成有与正、负电极的至少其中之一电连接的凸块，所述电路结构上对应发光二极管晶粒的凸块形成有防氧化金属层，所述发光二极管晶粒的凸块与电路结构上的防氧化金属层电连接。本发明中电路结构上对应于发光二极管晶粒的凸块形成有防氧化金属层，且该发光二极管晶粒通过凸块与电路结构上的防氧化金属层电连接，这能有效提升发光二极管封装结构的电性接触性能。
Description
技术领域
本发明涉及一种半导体，尤其涉及一种发光二极管封装结构。
背景技术
发光二极管凭借其高光效、低能耗、无污染等优点，已被应用于越来越多的场合之中，大有取代传统光源的趋势。
在应用到具体领域中之前，发光二极管晶粒还需要进行封装，以保护发光二极管晶粒不受挤压或者氧化，从而使发光二极管封装结构获得较高的发光效率及较长的使用寿命。
硅树脂模塑化合物（Silicon Molding Compound，SMC）以及环氧模塑料（Epoxy Molding Compound, EMC）常作为封装材料应用于发光二极管封装结构中。特别地，该硅树脂模塑化合物较环氧模塑料更耐高温，故在发光二极管封装结构中得到广泛应用。但由于该硅树脂模塑化合物或环氧模塑料与金属电极的密合度差，二者接合处会有空气或水气的渗入，容易导致内部电极氧化而影响发光二极管封装元件的电性接触变弱。
发明内容
有鉴于此，有必要提供一种电性接触较佳的发光二极管封装结构。
一种发光二极管封装结构，包括封装基板、设置于封装基板上的发光二极管晶粒，所述封装基板上设置电路结构，所述发光二极管晶粒具有分别与电路结构电连接的正电极和负电极，所述发光二极管晶粒上形成有与正、负电极的至少其中之一电连接的凸块，所述电路结构上对应发光二极管晶粒的凸块形成有防氧化金属层，所述发光二极管晶粒的凸块与电路结构上的防氧化金属层电连接。
本发明中电路结构上对应于发光二极管晶粒的凸块形成有防氧化金属层，且该发光二极管晶粒通过凸块与电路结构上的防氧化金属层电连接，这能有效提升发光二极管封装结构的电性接触性能。
下面参照附图，结合具体实施例对本发明作进一步的描述。
附图说明
图1为本发明第一实施例的发光二极管封装结构的剖面示意图。
图2为图1中所示发光二极管封装结构的俯视示意图。
图3为本发明第二实施例的发光二极管封装结构的剖面示意图。
主要元件符号说明
| 发光二极管封装结构 | 100、100a |
| 封装基板 | 10、10a |
| 电路结构 | 19、19a |
| 第一连接电极 | 20、20a |
| 上表面 | 201、211 |
| 第一凹槽 | 2011 |
| 第二凹槽 | 2111 |
| 下表面 | 202、212 |
| 第二连接电极 | 21、21a |
| 反射杯 | 30、30a |
| 容置槽 | 301、301a |
| 防氧化金属层 | 40、40a、41 |
| 封装层 | 50、50a |
| 发光二极管晶粒 | 60、60a |
| 第一凸块 | 601、601a |
| 第二凸块 | 602 |
| 导线 | 603 |
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
请同时参考图1和图2，为本发明第一实施例的发光二极管封装结构100，其包括封装基板10、设置于封装基板10上的发光二极管晶粒60、位于封装基板10上并围绕发光二极管晶粒60设置的反射杯30和设置于封装基板10上并包覆发光二极管晶粒60的封装层50。
上述封装基板10可由硅树脂模塑化合物或环氧模塑料中任意一种与玻璃纤维压合制成。而反射杯30以及封装层50的材质均采用硅树脂模塑化合物或环氧模塑料。在本实施例中，该反射杯30与该封装基板10通过注塑的方式一体形成。
该封装基板10上设置有电路结构19。该电路结构19包括间隔设置的第一连接电极20和第二连接电极21。该第一连接电极20和第二连接电极21均为纵长的块体。该第一连接电极20和第二连接电极21的剖面呈倒置的“凸”字形。该第一连接电极20和第二连接电极21由具有良好导热以及导电性能的材质构成，比如铜、铝。
该发光二极管晶粒60的正电极（N型电极）和负电极（P型电极）上分别形成有第一凸块601和第二凸块602。该第一连接电极20和第二连接电极21对应该发光二极管晶粒60的第一凸块601和第二凸块602分别形成防氧化金属层40、41。该发光二极管晶粒60的第一凸块601和第二凸块602对应与第一连接电极20上的防氧化金属层40和第二连接电极21上的防氧化金属层41分别接触形成电连接。
该第一凸块601和第二凸块602的材质为金或焊锡。该第一凸块601和第二凸块602通过共晶焊接方式结合于对应的防氧化金属层40、41上。
该防氧化金属层40、41的材质可为金、镍或防氧化的合金中任意一种。该防氧化金属层40、41设置于电路结构19的表面上（未标示）并邻近该电路结构19与封装基板10的接合处。
在本实施例中，该第一连接电极20包括相对设置的上表面201和下表面202。该第一连接电极20的上表面201上形成一第一凹槽2011。该防氧化金属层40形成于该第一凹槽2011内并填满该第一凹槽2011，该防氧化金属层40的与第一凸块601接触的外表面（未标示）与该第一连接电极20的上表面201平齐。相同地，该第二连接电极21包括相对设置的上表面211和下表面212。该第二连接电极21的上表面211上形成以第二凹槽2111。该防氧化金属层41形成于该第二凹槽2111内并填满该第二凹槽2111。该防氧化金属层41的与第二凸块602接触的外表面（未标示）与该第二连接电极21的上表面211平齐。
可以理解地，在其他实施例中，该防氧化金属层40、41可直接通过电镀或蒸镀方式分别形成于第一连接电极20的上表面201和第二连接电极21的上表面211上。
该反射杯30具有一容纳发光二极管晶粒60的容置槽301。发光二极管晶粒60位于该容置槽301内并通过倒装的方式安装于封装基板10上。
该封装层50内包含荧光粉（图未示）用于转换发光二极管晶粒60发射的光线。该荧光粉可以是石榴石基荧光粉、硅酸盐基荧光粉、原硅酸盐基荧光粉、硫化物基荧光粉、硫代镓酸盐基荧光粉或氮化物基荧光粉中至少一种。
请参考图3，与第一实施例所述的发光二极管封装结构100不同的是，本发明第二实施例的发光二极管封装结构100a中，该发光二极管晶粒60a的正电极（N型电极）和负电极（P型电极）分别位于发光二极管晶粒60a的相对两侧。该发光二极管晶粒60a的正电极和负电极的其中之一上形成第一凸块601a并通过该第一凸块601a与第一连接电极20a上的防氧化金属层40接触电连接。该发光二极管晶粒60a的另一电极通过导线603与第二连接电极21a电连接。
与现有技术相比，本发明第一实施例中该封装基板10上的电路结构19上对应于发光二极管晶粒60的第一凸块601和第二凸块602形成有防氧化金属层40、41，且该发光二极管晶粒60通过第一凸块601和第二凸块602与第一连接电极31上的防氧化金属层40和第二连接电极21上的防氧化金属层41分别接触电连接，这能有效提升发光二极管封装结构的电性接触性能。
本发明第二实施例中该封装基板10a的电路结构19a上对应于发光二极管晶粒60a的第一凸块601a形成有防氧化金属层40a，且该发光二极管晶粒60a通过第一凸块601a与第一连接电极31a上的防氧化金属层40a接触电连接，这能有效提升发光二极管封装结构的电性接触性能。
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种相应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种发光二极管封装结构，包括封装基板、设置于封装基板上的发光二极管晶粒，所述封装基板上设置电路结构，所述发光二极管晶粒具有分别与电路结构电连接的正电极和负电极，其特征在于：所述发光二极管晶粒上形成有与正、负电极的至少其中之一电连接的凸块，所述电路结构上对应发光二极管晶粒的凸块形成有防氧化金属层，所述发光二极管晶粒的凸块与电路结构上的防氧化金属层电连接。
2.如权利要求1所述的发光二极管封装结构，其特征在于：所述发光二极管晶粒的正电极和负电极的其中之一上形成所述凸块并通过所述凸块与电路结构上的防氧化金属层电连接，所述发光二极管晶粒的正电极和负电极的其中之另一通过导线与电路结构电连接。
3.如权利要求1所述的发光二极管封装结构，其特征在于：所述发光二极管晶粒的正电极和负电极上分别形成所述凸块，所述发光二极管晶粒通过倒装的方式安装于封装基板上，所述发光二极管晶粒正电极和负电极分别通过所述凸块与电路结构上的防氧化金属层电连接。
4.如权利要求1所述的发光二极管封装结构，其特征在于：还包括形成于封装基板上并环绕发光二极管晶粒的反射杯。
5.如权利要求4所述的发光二极管封装结构，其特征在于：所述反射杯与封装基板通过注塑的方式一体形成。
6.如权利要求1所述的发光二极管封装结构，其特征在于：所述防氧化金属层为金或镍。
7.如权利要求1所述的发光二极管封装结构，其特征在于：所述防氧化金属层邻近电路结构与封装基板的接合处设置于电路结构的表面上。
8.如权利要求1所述的发光二极管封装结构，其特征在于：所述封装基板包括相对设置的上表面和下表面，所述封装基板的上表面形成一凹槽，所述防氧化金属层形成于所述凹槽内。
9.如权利要求8所述的发光二极管封装结构，其特征在于：所述防氧化金属层填满该凹槽，所述防氧化金属层的与凸块接触地外表面与所述封装基板的上表面平齐。
10.如权利要求1所述的发光二极管封装结构，其特征在于：还包括设置于封装基板上并覆盖发光二极管晶粒的封装层，所述封装层内包含荧光粉用于转换发光二极管晶粒发出的光线。
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| TW102112276A TWI513066B (zh) | 2013-01-29 | 2013-04-08 | 發光二極體封裝結構 |
| US14/077,218 US9048394B2 (en) | 2013-01-29 | 2013-11-12 | Light emitting diode package with oxidation-resistant metal coating layer |
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| CN105428511A (zh) * | 2014-09-12 | 2016-03-23 | 株式会社东芝 | 半导体发光装置及导线架 |
| CN105940507A (zh) * | 2014-02-07 | 2016-09-14 | 奥斯兰姆奥普托半导体有限责任公司 | 光电组件以及用于生产所述光电组件的方法 |
| CN106952990A (zh) * | 2016-01-07 | 2017-07-14 | 深圳市斯迈得半导体有限公司 | 一种芯片级led封装装置及其制作工艺 |
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| WO2019124730A1 (ko) * | 2017-12-19 | 2019-06-27 | 서울반도체주식회사 | 발광 다이오드 패키지 및 이를 포함하는 발광 모듈 |
| KR20190074200A (ko) | 2017-12-19 | 2019-06-27 | 서울반도체 주식회사 | 발광 다이오드 패키지 및 이를 포함하는 발광 모듈 |
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| US20090321778A1 (en) * | 2008-06-30 | 2009-12-31 | Advanced Optoelectronic Technology, Inc. | Flip-chip light emitting diode and method for fabricating the same |
| TW201222896A (en) * | 2010-11-24 | 2012-06-01 | Advanced Optoelectronic Tech | LED package and method of manufacturing the same |
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| JP5985846B2 (ja) * | 2011-06-29 | 2016-09-06 | Ｆｌｅｘｃｅｅｄ株式会社 | 発光素子搭載用基板及びｌｅｄパッケージ |
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| US20090321778A1 (en) * | 2008-06-30 | 2009-12-31 | Advanced Optoelectronic Technology, Inc. | Flip-chip light emitting diode and method for fabricating the same |
| CN101621101A (zh) * | 2008-06-30 | 2010-01-06 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
| TW201222896A (en) * | 2010-11-24 | 2012-06-01 | Advanced Optoelectronic Tech | LED package and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105940507A (zh) * | 2014-02-07 | 2016-09-14 | 奥斯兰姆奥普托半导体有限责任公司 | 光电组件以及用于生产所述光电组件的方法 |
| CN105428511A (zh) * | 2014-09-12 | 2016-03-23 | 株式会社东芝 | 半导体发光装置及导线架 |
| CN106952990A (zh) * | 2016-01-07 | 2017-07-14 | 深圳市斯迈得半导体有限公司 | 一种芯片级led封装装置及其制作工艺 |
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| US20140209948A1 (en) | 2014-07-31 |
| TW201431139A (zh) | 2014-08-01 |
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