TW201222896A - LED package and method of manufacturing the same - Google Patents

LED package and method of manufacturing the same Download PDF

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Publication number
TW201222896A
TW201222896A TW099140472A TW99140472A TW201222896A TW 201222896 A TW201222896 A TW 201222896A TW 099140472 A TW099140472 A TW 099140472A TW 99140472 A TW99140472 A TW 99140472A TW 201222896 A TW201222896 A TW 201222896A
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Taiwan
Prior art keywords
emitting diode
light emitting
electrical connection
substrate
connection portion
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TW099140472A
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Chinese (zh)
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TWI420713B (en
Inventor
Chao-Hsiung Chang
Chieh-Ling Chang
Pi-Chiang Hu
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Advanced Optoelectronic Tech
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Publication of TW201222896A publication Critical patent/TW201222896A/en
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Publication of TWI420713B publication Critical patent/TWI420713B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The disclosure relates to an LED package. The LED package includes a substrate, an LED chip formed on the substrate, and a first electrode, and a second electrode. The first electrode and the second electrode are electrically connected with the LED chip. The first electrode extends from a first surface of the substrate to a second surface opposite to the first surface. The second electrode extends from the first surface of the substrate to the second surface. An anti-oxidation coating is formed on the first and second electrodes, for preventing the first and second electrodes from being oxidized. The disclosure further relates to a method of manufacturing the LED package.

Description

201222896 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種半導體發光元件及其製造方法，尤其涉 及一種發光二極體封裝結構及其製造方法。 【先前技秫亍】 [0002] 發光二極體（Light Emi tt ing Diode，LED)是一種可 將電流轉換成特定波長範圍之光之半導體元件。發光二 極體以其亮度高、工作電壓低、功耗小、易與積體電路 匹配、驅動簡單、壽命長等優點，從而可作為光源而廣 泛應用於照明領域。 [0003] 在習知之發光二極體封裝結構中，其金屬電極大都採用 銀或銀鎳合金製成，但金屬銀容易被氧化而導致元件功 能喪失。 【發明内容】 [0004] 有鑒於此，有必要提供一種防止金屬電極被氧化之發光 二極體封裝結構及其製造方法。 [0005] —種發光二極體封裝結構，包括基板、設置在基板上之 發光二極體晶片及藉由打線與發光二極體晶片電連接之 第一電連接部和第二電連接部，該第一電連接部由該基 板之第一表面延伸至與第一表面相對之第二表面，該第 二電連接部由該基板之第一表面延伸至與第一表面相對 之第二表面，所述第一電連接部和第二電連接部覆蓋有 一層防氧化層。 [0006] —種發光二極體封裝結構製造方法，包括步驟： 099140472 表單編號A0101 第4頁/共21頁 0992070478-0 201222896 [0007] 1)提供一基板，該基板上形成有多對電極，每對電極之 間形成與電極相互絕緣之反射部； ’ [0008] 2)提供多個絕緣層，每一絕緣層蓋在相應之反射部上； [0009] 3)在電極上電鍍有防氧化層； [0010] 4)放置發光二極體晶片在每一絕緣層上，並藉由導線將 發光二極體晶片與相應之防氧化層電連接； [0011] 5)形成多個相互間隔之封裝體，每一封裝體覆蓋一對電 極上之防氧化層及該對電極之間之絕緣層上，並將相應 Ο 之發光二極體晶片與導線包裹，從而在基板上形成多個 發光二極體封裝結構； [0012] 6)將多個發光二極體封裝結構彼此分離。 [0013] 在第一電連接部和第二電連接部（即電極）上形成防氧 化層，有效防止第一電連接部和第二電連接部被氧化， 從而保證了發光二極體封裝結構正常工作。 Q 【實施方式】 [0014] 以下將結合附圖對本發明作進一步之詳細說明。 [0015] 如圖1所示，本發明第一實施例之發光二極體封裝結構包 括基板10、貼於基板10上之相互絕緣之第一電連接部11 和第二電連接部12、反射部13、包覆反射部13之絕緣層 14、形成於第一電連接部11和第二電連接部12之防氧化 層15、設置於絕緣層14上之發光二極體晶片16、以及設 置於發光二極體晶片16之出光方向上之封裝體17。所述 反射部13藉由絕緣層14分別與第一電連接部11和第二電 0992070478-0 099140472 表單編號A0101 第5頁/共21頁 201222896 連接部12絕緣。所述發光二極體晶片16藉由打線分別與 弟一電連接部11和第·一電連接部12上之防氣化層1 5電連 接。 [0016] [0017] [0018] 所述基板10可以是塑膠基板或陶瓷基板如氧化鋁基板、 氧化鋅基板或者石夕基板等。該基板10呈平板狀，其具有 一第一表面101以及與其相對之第二表面102。第一電連 接部11之一端形成於該基板10之第一表面1〇1上，其另一 端延伸至該基板10之第二表面102。第二電連接部12之一 端形成於該基板10之第一表面1〇1上，其另一端延伸至該 基板10之第二表面102。該第一電連接部11和第二電連接 部1 2為一金屬層，該金屬層可以為銀、銀鎳合金或其他 導電金屬。 所述反射部13與第一電連接部11和第二電連接部丨2相互 絕緣。在第一實施例中，該反射部丨3僅貼設於所述基板 之第一表面101上。該反射部!3可為其他結構，如圖2 ... ：· . 丨. . 所示之結構，該反射部13a自基板1〇之第一表面1〇1延伸 至基板1 0之第二表...面1 〇 2上;以增和熱傳導。在第一、第 二實施例中，反射部13、13a為一金屬層，該金屬層可以 為銀、銀鎳合金或其他導電金屬。 在第一實施例中，所述絕緣層14覆蓋於所述反射部13之 頂面和週邊側面，以防止反射部13被氧化。該絕緣層14 為透明之材質，例如Si02。在第一實施例中，該絕緣層 14之側部剛好填充反射部13與第一電連接部丨丨和第二電 連接部12之間之空隙。在其他實施例中，該絕緣層14只 要包裹好反射部〗3即可。 099140472 表單編號A0101 第6頁/共21頁 0992070478-0 201222896 [0019] =氡化層15分別覆蓋於所述第-電連接邹η和第二 =連接部12’以防止第―電連㈣二接部12 ^聽。祕氧化層15可藉由電狀方法形成於第一電 ^接部U和第二電連接部12上。該防氧化層15為不易氧 之金屬層，例如Au⑷層。防氧化層咖可同時覆蓋 位於所述基板Π)之第二表面⑽上之第—電連接糾和第 一電連接部12，如圖3所示。 [0020] Ο 在第-實施例中’所述發光二極體晶片16貼於所述絕緣 層14之頂面，並藉由打線分別與覆蓋於第—電連接部n 和第二電連接部12上之防氧化層15電連接，使得發光二 極體晶片16措由導線18和防’氧化層15分別與第一電連接 部11和第二電連接部12電連接。該防氧化層15不僅可以 防止第一電連接部11和第二電連接部12氧化，而且可以 增加熱應力避免導線18受熱時斷裂。 [0021] Ο 所述封裝體17覆蓋所述防氧化層15與所述絕緣層14上， 並將發光二極體晶片16與導線18包袠〇該封裝體17為摻 雜有螢光粉之封裝樹脂。在本實施例中’該封裝體17之 兩侧分別與第一電連接部11和第二電連接部12之侧部平 齊。發光二極體晶片16發出光線’透過封裝體17射出。 發光二極體晶片16發出之光線激發螢光粉產生波長不同 之光線，該二種光線在封裝體17内充分混光後射出。所 述反射部13反射發光二極體晶片16發出之光線。 圖4至圖8示出了製造本發明第一實施例之發光一極體封 裝結構之方法，包拮如下步驟： 099140472 表單編號A0101 第7頁/共21頁 0992070478-0 [0022] 201222896 [0023]步驟1，如圖4所示，提供一基板l〇，在基板ι〇之第—表 面1〇1上鍍上一層反射部13，並由第一表面101延伸至基 板10之第二表面102鍍上之第一電連接部u和第二電連接 部12。第一電連接部U和第二電連接部12即是發光二極 體封裝結構之一對電極。假設反射部13、第一電連接邛 11和第二電連接部12為一組，該基板1〇上形成多組在 後續步驟中，在一個基板1 〇上形成多個發光二極體封裝 結構。步驟2至步驟5中以其中一個發光二極體封襞結構 為例進行說明，其他實施例之發光二極體封裝結構之製 造方法同理。 _]步驟2 ’如圖5所示，預先製作一絕緣層14，並將該絕緣 層14蓋在反射部13上。絕緣層14可增加反射效果也防 止反射部13氧化。 _5]步驟3，如圖6所示，利用電鍍技術覆蓋一層防氧化層a 在位於所述基板10之第一表面1〇1丰之第一電連接部"和 第-電連接部12上，所述防氧鬚15之頂面與絕緣層i 4 之頂面平齊。 ...201222896 VI. Description of the Invention: [Technical Field] The present invention relates to a semiconductor light emitting device and a method of fabricating the same, and, in particular, to a light emitting diode package structure and a method of fabricating the same. [Prior Art] [0002] A Light Emitter (LED) is a semiconductor component that converts current into light of a specific wavelength range. The light-emitting diode is widely used in the field of illumination because of its high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life. [0003] In the conventional light-emitting diode package structure, the metal electrodes are mostly made of silver or silver-nickel alloy, but the metal silver is easily oxidized to cause loss of function of the element. SUMMARY OF THE INVENTION [0004] In view of the above, it is necessary to provide a light emitting diode package structure and a method of fabricating the same that prevent metal electrodes from being oxidized. [0005] A light emitting diode package structure includes a substrate, a light emitting diode chip disposed on the substrate, and a first electrical connection portion and a second electrical connection portion electrically connected to the light emitting diode chip by wire bonding, The first electrical connection portion extends from the first surface of the substrate to a second surface opposite to the first surface, the second electrical connection portion extending from the first surface of the substrate to the second surface opposite the first surface, The first electrical connection portion and the second electrical connection portion are covered with an anti-oxidation layer. [0006] A method for fabricating a light emitting diode package structure, comprising the steps of: 099140472 Form No. A0101 Page 4 / Total 21 Page 0992070478-0 201222896 [0007] 1) providing a substrate on which a plurality of pairs of electrodes are formed, a reflecting portion that is insulated from the electrodes is formed between each pair of electrodes; '[0008] 2) providing a plurality of insulating layers, each of which is covered on the corresponding reflecting portion; [0009] 3) electroplating with anti-oxidation on the electrodes [0010] 4) placing a light-emitting diode wafer on each of the insulating layers, and electrically connecting the light-emitting diode wafers to the corresponding oxidation preventing layer by wires; [0011] 5) forming a plurality of mutually spaced layers a package body, each of which covers an anti-oxidation layer on a pair of electrodes and an insulating layer between the pair of electrodes, and wraps the corresponding LED array and the wires to form a plurality of light-emitting diodes on the substrate A polar body package structure; [0012] 6) separating a plurality of light emitting diode package structures from each other. [0013] forming an oxidation preventing layer on the first electrical connection portion and the second electrical connection portion (ie, the electrode), thereby effectively preventing the first electrical connection portion and the second electrical connection portion from being oxidized, thereby ensuring the light emitting diode package structure normal work. Q [Embodiment] [0014] The present invention will be further described in detail below with reference to the accompanying drawings. [0015] As shown in FIG. 1, the LED package structure of the first embodiment of the present invention includes a substrate 10, a first electrical connection portion 11 and a second electrical connection portion 12 that are adhered to each other on the substrate 10. The insulating layer 14 covering the reflecting portion 13, the oxidation preventing layer 15 formed on the first electrical connecting portion 11 and the second electrical connecting portion 12, the light emitting diode wafer 16 disposed on the insulating layer 14, and the setting The package 17 is in the light-emitting direction of the light-emitting diode wafer 16. The reflection portion 13 is insulated from the first electrical connection portion 11 and the second electric 0992070478-0 099140472 form number A0101, page 5 / 21 page 201222896, respectively, by the insulating layer 14. The light-emitting diode chips 16 are electrically connected to the gas-proof layer 15 on the first electrical connection portion 11 and the first electrical connection portion 12 by wire bonding. [0018] [0018] The substrate 10 may be a plastic substrate or a ceramic substrate such as an alumina substrate, a zinc oxide substrate, or a stone substrate. The substrate 10 has a flat shape with a first surface 101 and a second surface 102 opposite thereto. One end of the first electrical connection portion 11 is formed on the first surface 110 of the substrate 10, and the other end thereof extends to the second surface 102 of the substrate 10. One end of the second electrical connection portion 12 is formed on the first surface 110 of the substrate 10, and the other end thereof extends to the second surface 102 of the substrate 10. The first electrical connection portion 11 and the second electrical connection portion 12 are a metal layer, which may be silver, silver-nickel alloy or other conductive metal. The reflection portion 13 is insulated from the first electrical connection portion 11 and the second electrical connection portion 丨2. In the first embodiment, the reflecting portion 3 is attached only to the first surface 101 of the substrate. The reflection portion !3 may have another structure. As shown in FIG. 2, the reflection portion 13a extends from the first surface 1〇1 of the substrate 1〇 to the second substrate 1 0. Table... face 1 〇 2; to increase heat transfer. In the first and second embodiments, the reflecting portions 13, 13a are a metal layer which may be silver, silver-nickel alloy or other conductive metal. In the first embodiment, the insulating layer 14 covers the top surface and the peripheral side surface of the reflection portion 13 to prevent the reflection portion 13 from being oxidized. The insulating layer 14 is made of a transparent material such as SiO 2 . In the first embodiment, the side portion of the insulating layer 14 just fills the gap between the reflecting portion 13 and the first electrical connection portion 丨丨 and the second electrical connecting portion 12. In other embodiments, the insulating layer 14 is only required to wrap the reflective portion. 099140472 Form No. A0101 Page 6/Total 21 Page 0992070478-0 201222896 [0019] The deuterated layer 15 covers the first-electrode connection and the second=connection portion 12', respectively, to prevent the first-electrode (four) two The junction 12 ^ listens. The secret oxide layer 15 can be formed on the first electrical connection portion U and the second electrical connection portion 12 by an electrical method. The oxidation preventing layer 15 is a metal layer which is not easily oxygenated, for example, an Au (4) layer. The anti-oxidation layer can simultaneously cover the first electrical connection on the second surface (10) of the substrate 纠) and the first electrical connection 12, as shown in FIG. [0020] In the first embodiment, the light-emitting diode wafer 16 is attached to the top surface of the insulating layer 14, and is covered by the wire to cover the first electrical connection portion n and the second electrical connection portion, respectively. The oxidation preventing layer 15 on the 12 is electrically connected such that the light emitting diode chip 16 is electrically connected to the first electrical connection portion 11 and the second electrical connection portion 12 by the wires 18 and the anti-oxidation layer 15, respectively. The oxidation preventing layer 15 can prevent not only oxidation of the first electrical connection portion 11 and the second electrical connection portion 12 but also increase of thermal stress to prevent the wire 18 from being broken when heated. [0021] The package body 17 covers the oxidation preventing layer 15 and the insulating layer 14, and the light emitting diode wafer 16 and the wire 18 are wrapped around the package body 17 to be doped with phosphor powder. Encapsulation resin. In the present embodiment, both sides of the package body 17 are flush with the sides of the first electrical connection portion 11 and the second electrical connection portion 12, respectively. The light-emitting diode wafer 16 emits light "through the package 17 to be emitted. The light emitted from the LED wafer 16 excites the phosphor to produce light of a different wavelength, and the two rays are sufficiently mixed in the package 17 to be emitted. The reflecting portion 13 reflects the light emitted from the LED chip 16. 4 to 8 illustrate a method of fabricating a light-emitting diode package structure according to a first embodiment of the present invention, and the steps are as follows: 099140472 Form No. A0101 Page 7 / Total 21 Page 0992070478-0 [0022] 201222896 [0023 Step 1, as shown in FIG. 4, a substrate 10 is provided, a reflective portion 13 is plated on the first surface 1〇1 of the substrate ι, and extends from the first surface 101 to the second surface 102 of the substrate 10. The first electrical connection portion u and the second electrical connection portion 12 are plated. The first electrical connection portion U and the second electrical connection portion 12 are one pair of electrodes of the light emitting diode package structure. Assuming that the reflecting portion 13, the first electrical connecting port 11 and the second electrical connecting portion 12 are a group, the plurality of sets of the substrate 1 are formed on the substrate 1 in a subsequent step, and a plurality of light emitting diode package structures are formed on one substrate 1 . . Steps 2 to 5 are described by taking one of the light-emitting diode package structures as an example. The manufacturing method of the light-emitting diode package structure of other embodiments is the same. _] Step 2' As shown in Fig. 5, an insulating layer 14 is prepared in advance, and the insulating layer 14 is placed on the reflecting portion 13. The insulating layer 14 can increase the reflection effect and also prevent the reflection portion 13 from being oxidized. _5] Step 3, as shown in FIG. 6, using an electroplating technique to cover an anti-oxidation layer a on the first electrical connection portion " and the first electrical connection portion 12 on the first surface of the substrate 10 The top surface of the oxygen barrier 15 is flush with the top surface of the insulating layer i 4 . ...

[_] #驟4 ’如圖7所示，放置發光二極體晶片16在所述絕緣[_] #STEP 4 ′ As shown in Figure 7, a light-emitting diode wafer 16 is placed in the insulation

層14上’並藉由導線18將發光二極體晶片16與防氧化層 15電連接。 B 剛步驟5，如圖8所示，形成一封裝體1?，該封襄體η覆蓋 所述防氧化層15與所述絕緣層14上，並將發光二極體晶 片16與導線18包裹。 闕#驟6，將通過上述步驟形成之多個發光二極體封褒結構 099140472 表單編號A0101 0992070478-0 第8頁/共21頁 201222896 [0029] [0030] Ο [0031]The layer 14 is < and electrically connected to the anti-oxidation layer 15 by the wires 18. B. Just step 5, as shown in FIG. 8, a package body 1 is formed, which covers the oxidation preventing layer 15 and the insulating layer 14, and wraps the LED wafer 16 and the wire 18 .阙#Step 6, a plurality of light-emitting diode sealing structures formed by the above steps 099140472 Form No. A0101 0992070478-0 Page 8 of 21 201222896 [0029] [001]

[0032] 彼此分離。在本實施例中，採用蝕刻方式分離。 製造本發明第二實施例之發光二極體封裝結構之方法與 第一實施例之大致相同，不同之處在於：第二實施例之 反射部13a自基板10之第一表面101延伸至基板10之第二 表面102上。可以理解地，在第二實施例中，防氧化層15 也可以同時形成於位於所述基板10之第二表面102上之第 一電連接部11和第二電連接部12上。 製造本發明第三實施例之發光二極體封裝結構之方法與 第一實施例之大致相同，不同之處在於：防氧化層15b同 時覆蓋位於所述基板10之第二表面102上之第一電連接部 11和第二電連接部12上。可以理解地，在第三實施例中 ，反射部13可以自基板10之第一表面101延伸至基板10 之第二表面102上。 綜上所述，利用選鍍之技術在第一電連接部11和第二電 連接部12上形成防氧化層15 (15b)，有效防止第一電連 接部11和第二電連接部12被氧化，從而保證了發光二極 體封裝結構正常工作。 另外，在發光二極體晶片16之下面形成有反射部13與絕 緣層14，使得所述基板10之表面形成調光結構，以將發 光二極體晶片16發出之光線聚集向發光二極體晶片16之 上方。 應該指出，上述實施方式僅為本發明之較佳實施方式， 本領域技術人員還可在本發明精神内做其他變化。這些 依據本發明精神所做之變化，都應包含在本發明所要求 099140472 表單編號A0101 第9頁/共21頁 0992070478-0 [0033] 201222896 保護之範圍之内。 【圖式簡單說明】 [0034] 圖1為本發明第一實施例之發光二極體封裝結構之截面示 意圖。 [0035] 圖2為本發明第二實施例之發光二極體封裝結構之截面示 意圖。 [0036] 圖3為本發明第三實施例之發光二極體封裝結構之截面示 意圖。 [0037] 圖4為製造圖1之發光二極體封裝結構之第一個步驟。 [0038] 圖5為製造圖1之發光二極體封裝結構之第二個步驟。 [0039] 圖6為製造圖1之發光二極體封裝結構之第三個步驟。 [0040] 圖7為製造圖1之發光二極體封裝結構之第四個步驟。 [0041] 圖8為製造圖1之發光二極體封裝結構之第五個步驟。 【主要元件符號說明】 [0042] 基板：10 [0043] 第一電連接部：11 [0044] 第二電連接部：12 [0045] 反射部：13、13a [0046] 絕緣層：14 [0047] 防氧化層：15、15b [0048] 發光二極體晶片：16 099140472 表單編號A0101 第10頁/共21頁 0992070478-0 201222896 [0049] 封裝體：17 [0050] 導線：18 [0051] 第一表面：101 [0052] 第二表面：102 〇 099140472 表單編號A0101 第11頁/共21頁 0992070478-0[0032] separated from each other. In this embodiment, separation is performed by etching. The method of manufacturing the light emitting diode package structure of the second embodiment of the present invention is substantially the same as that of the first embodiment, except that the reflection portion 13a of the second embodiment extends from the first surface 101 of the substrate 10 to the substrate 10. On the second surface 102. It can be understood that, in the second embodiment, the oxidation preventing layer 15 can also be simultaneously formed on the first electrical connection portion 11 and the second electrical connection portion 12 on the second surface 102 of the substrate 10. The method for fabricating the light emitting diode package structure of the third embodiment of the present invention is substantially the same as that of the first embodiment, except that the oxidation preventing layer 15b covers the first surface 102 of the substrate 10 at the same time. The electrical connection portion 11 and the second electrical connection portion 12 are provided. It will be appreciated that in the third embodiment, the reflective portion 13 may extend from the first surface 101 of the substrate 10 to the second surface 102 of the substrate 10. In summary, the oxidation preventing layer 15 (15b) is formed on the first electrical connection portion 11 and the second electrical connection portion 12 by means of a plating technique, thereby effectively preventing the first electrical connection portion 11 and the second electrical connection portion 12 from being Oxidation ensures the normal operation of the LED package structure. In addition, a reflective portion 13 and an insulating layer 14 are formed under the LED array 16 such that the surface of the substrate 10 forms a dimming structure to concentrate the light emitted from the LED wafer 16 toward the LED. Above the wafer 16. It should be noted that the above-described embodiments are merely preferred embodiments of the present invention, and those skilled in the art can make other changes within the spirit of the present invention. These changes in accordance with the spirit of the present invention are intended to be included in the scope of the present invention as claimed in the specification 099140472 Form No. A0101 Page 9 of 21 0992070478-0 [0033] 201222896. BRIEF DESCRIPTION OF THE DRAWINGS [0034] FIG. 1 is a cross-sectional view showing a light emitting diode package structure according to a first embodiment of the present invention. 2 is a cross-sectional view showing a light emitting diode package structure according to a second embodiment of the present invention. 3 is a cross-sectional view showing a light emitting diode package structure according to a third embodiment of the present invention. 4 is a first step of fabricating the LED package structure of FIG. 1. [0038] FIG. 5 is a second step of fabricating the LED package structure of FIG. 1. 6 is a third step of fabricating the LED package structure of FIG. 1. [0040] FIG. 7 is a fourth step of fabricating the LED package structure of FIG. 1. [0041] FIG. 8 is a fifth step of fabricating the LED package structure of FIG. 1. [Main component symbol description] [0042] Substrate: 10 [0043] First electrical connection: 11 [0044] Second electrical connection: 12 [0045] Reflection: 13, 13a [0046] Insulation: 14 [0047] Anti-oxidation layer: 15, 15b [0048] LED array: 16 099140472 Form No. A0101 Page 10 / Total 21 Page 0992070478-0 201222896 [0049] Package: 17 [0050] Wire: 18 [0051] A surface: 101 [0052] Second surface: 102 〇 099140472 Form number A0101 Page 11 / Total 21 page 0992070478-0

Claims (1)

201222896 七、申請專利範圍： 1 . 一種發光二極體封裝結構，包括基板、設置在基板上之發 光二極體晶片、與發光二極體晶片電連接之第一電連接部 和第二電連接部，該第一電連接部由該基板之第一表面延 伸至與第一表面相對之第二表面，該第二電連接部由該基 板之第一表面延伸至與第一表面相對之第二表面，其改良 在於：所述第一電連接部和第二電連接部覆蓋有一層防氧 化層。 2 .如申請專利範圍第1項所述之發光二極體封裝結構，其中 所述防氧化層為一層不易氧化之金屬層。 3 .如申請專利範圍第1項所述之發光二極體封裝結構，其中 還包括設置於所述基板上之反射部及包覆該反射部之絕緣 層，該反射部藉由絕緣層與第一電連接部和第二電連接部 相互絕緣，所述發光二極體晶片設置於該絕緣層上。 4 .如申請專利範圍第3項所述之發光二極體封裝結構，其中 所述絕緣層由透明之材質製成。 5 .如申請專利範圍第3項所述之發光二極體封裝結構，其中 還包括覆蓋於所述防氧化層與所述絕緣層上之封裝體，該 封裝體包裹所述發光二極體晶片。 6 . —種發光二極體封裝結構製造方法，包括步驟： 1) 提供一基板，該基板上形成有多對電極，每對電極之間 形成與電極相互絕緣之反射部； 2) 提供多個絕緣層，每一絕緣層蓋在相應之反射部上； 3) 在電極上電鍍有防氧化層； 4) 放置發光二極體晶片在每一絕緣層上，並藉由導線將發 099140472 表單編號A0101 第12頁/共21頁 0992070478-0 201222896 光二極體晶片與相應之防氧化層電連接； 5) 形成多個相互間隔之封裝體，每一封裝體覆蓋一對電極 上之防氧化層及該對電極之間之絕緣層上，並將相應之發 光二極體晶片與導線包裹，從而在基板上形成多個發光二 極體封裝結構； 6) 將多個發光二極體封裝結構彼此分離。 7 .如申請專利範圍第6項所述之發光二極體封裝結構製造方 法，其中步驟3)中之防氧化層為一層不易氧化之金屬層。 8 .如申請專利範圍第6項所述之發光二極體封裝結構製造方 法，其中步驟4)中之絕緣層由透明之材質製成。 9 .如申請專利範圍第6項至第8項中任一項所述之發光二極體 封裝結構製造方法，其中所述電極由所述基板之第一表面 延伸至與第一表面相對之第二表面。 10 .如申請專利範圍第9項所述之發光二極體封裝結構製造方 法，其中所述反射部由所述基板之第一表面延伸至與第二 表面。 ί 099140472 表單編號Α0101201222896 VII. Patent application scope: 1. A light emitting diode package structure, comprising a substrate, a light emitting diode chip disposed on the substrate, a first electrical connection portion and a second electrical connection electrically connected to the light emitting diode chip The first electrical connection portion extends from the first surface of the substrate to a second surface opposite to the first surface, the second electrical connection portion extending from the first surface of the substrate to the second surface opposite the first surface The surface is improved in that the first electrical connection portion and the second electrical connection portion are covered with an oxidation preventing layer. 2. The light emitting diode package structure of claim 1, wherein the oxidation preventing layer is a metal layer that is not easily oxidized. 3. The light emitting diode package structure of claim 1, further comprising a reflective portion disposed on the substrate and an insulating layer covering the reflective portion, wherein the reflective portion is insulated by an insulating layer An electrical connection portion and a second electrical connection portion are insulated from each other, and the light emitting diode chip is disposed on the insulating layer. 4. The light emitting diode package structure of claim 3, wherein the insulating layer is made of a transparent material. 5. The light emitting diode package structure of claim 3, further comprising a package overlying the oxidation preventing layer and the insulating layer, the package wrapping the light emitting diode chip . 6 . A method for manufacturing a light emitting diode package structure, comprising the steps of: 1) providing a substrate on which a plurality of pairs of electrodes are formed, and each pair of electrodes forms a reflection portion insulated from the electrodes; 2) providing a plurality of Insulating layer, each insulating layer is covered on the corresponding reflecting portion; 3) an anti-oxidation layer is plated on the electrode; 4) placing a light-emitting diode wafer on each insulating layer, and sending a 099140472 form number by wire A0101 Page 12 of 21 0992070478-0 201222896 The photodiode wafer is electrically connected to the corresponding anti-oxidation layer; 5) a plurality of mutually spaced packages are formed, each package covering an anti-oxidation layer on a pair of electrodes and A plurality of light emitting diode package structures are formed on the insulating layer between the pair of electrodes and the corresponding light emitting diode chip and the wire are wrapped to form a plurality of light emitting diode package structures; 6) separating the plurality of light emitting diode package structures from each other . 7. The method of fabricating a light emitting diode package structure according to claim 6, wherein the oxidation preventing layer in the step 3) is a metal layer which is not easily oxidized. 8. The method of fabricating a light emitting diode package structure according to claim 6, wherein the insulating layer in the step 4) is made of a transparent material. The method of manufacturing a light emitting diode package structure according to any one of claims 6 to 8, wherein the electrode extends from a first surface of the substrate to a first surface opposite to the first surface Two surfaces. 10. The method of fabricating a light emitting diode package structure according to claim 9, wherein the reflecting portion extends from the first surface of the substrate to the second surface. 0 099140472 Form number Α0101 第13頁/共21頁 0992070478-0Page 13 of 21 0992070478-0
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Publication number Priority date Publication date Assignee Title
CN103972372A (en) * 2013-01-29 2014-08-06 展晶科技(深圳)有限公司 LED encapsulation structure
CN104064662A (en) * 2013-03-21 2014-09-24 展晶科技(深圳)有限公司 Light-emitting-diode packaging structure

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TW565955B (en) * 2002-10-25 2003-12-11 Advanced Optoelectronic Tech Sub-mount for light emitting diode
US7948076B2 (en) * 2008-03-25 2011-05-24 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and vertical signal routing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103972372A (en) * 2013-01-29 2014-08-06 展晶科技(深圳)有限公司 LED encapsulation structure
CN104064662A (en) * 2013-03-21 2014-09-24 展晶科技(深圳)有限公司 Light-emitting-diode packaging structure

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