TWI479701B - 發光二極體 - Google Patents
發光二極體 Download PDFInfo
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- TWI479701B TWI479701B TW101142251A TW101142251A TWI479701B TW I479701 B TWI479701 B TW I479701B TW 101142251 A TW101142251 A TW 101142251A TW 101142251 A TW101142251 A TW 101142251A TW I479701 B TWI479701 B TW I479701B
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- emitting diode
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- 239000012790 adhesive layer Substances 0.000 claims description 41
- 239000010410 layer Substances 0.000 description 13
- 238000005538 encapsulation Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
本發明涉及一種發光元件,尤其涉及一種發光二極體。
習知的發光二極體(LED)包括一基板、固定在基板上的一發光晶片及固定在基板上並將發光晶片圍設其內的一反光杯。所述反光杯用以控制發光晶片的光的出光方向。通常,所述反光杯通過高分子黏膠直接黏接在基板上。並且為了保持反光杯與基板之間的電絕緣性,高分子黏膠的厚度通常較厚,如此,使得發光二極體在高度方向上厚度加大,從使其薄化的限制增加。
有鑒於此,有必要提供一種薄型化的發光二極體。
一種發光二極體,包括相互電絕緣設置的電極、固定於所述電極的上表面且電性連接所述電極的發光晶片、固定於所述電極的上表面的黏接層及固定在所述黏接層上表面上且與所述電極電絕緣並圍設發光晶片的反光杯,所述電極的上表面形成有凹槽,所述黏接層收容於所述凹槽內。
與習知技術相比,本發明中,因電極承載發光晶片的上表面形成有收容黏接層於其內的凹槽,使黏接層收容於所述凹槽內,從而降低了黏接層自電極向外凸伸的高度,達到了薄型化發光二極體的目的。
下面參照附圖,結合具體實施例對本發明作進一步的描述。
100、200、300‧‧‧發光二極體
10‧‧‧第一電極
11‧‧‧第一凹槽
20‧‧‧第二電極
21‧‧‧第二凹槽
30‧‧‧絕緣體
40‧‧‧發光晶片
41、42‧‧‧金屬引線
50、50a、50b‧‧‧黏接層
51‧‧‧內側面
52、52a、52b‧‧‧上表面
53‧‧‧外側面
60‧‧‧反光杯
61‧‧‧通孔
62‧‧‧反光層
70‧‧‧封裝層
圖1係本發明第一實施例的發光二極體的剖視圖。
圖2係本發明第二實施例的發光二極體的剖視圖。
圖3係本發明第三實施例的發光二極體的剖視圖。
請參閱圖1,本發明第一實施例所述的發光二極體100包括一第一電極10、一第二電極20、電絕緣連接所述第一電極10及第二電極20的一絕緣體30、固定於第一電極10上且電性連接第一電極10及第二電極20的一發光晶片40、分別固定於第一電極10、第二電極20上的二黏接層50、固定於黏接層50上且圍設發光晶片40的一反光杯60及填充於反光杯60內的一封裝層70。
所述第一電極10與所述第二電極20並排且間隔設置。所述第一電極10的上表面與所述第二電極20的上表面平行共面。所述第一電極10的下表面與所述第二電極20的下表面平行共面。所述第一電極10及所述第二電極20相互遠離的外端、自其上表面向下凹陷分別形成有一第一凹槽11及一第二凹槽21。所述第一凹槽11及第二凹槽21的縱截面呈L形,用以收容所述黏接層50於其內。於本實施例中,所述第一電極10及第二電極20為銅板或鉻板。
所述絕緣體30位於所述第一電極10與第二電極20之間,且其相對兩側表面分別連接所述第一電極10與第二電極20的內側面。所述絕緣體30的上下相對兩端分別與第一電極10的上、下表面共面。於本實施例中,所述絕緣體30為環氧樹脂、塑膠或矽樹脂。
所述發光晶片40固定於所述第一電極10的上表面靠近第二電極20的內端且通過金屬引線41、42分別與第一電極10及第二電極20電性連接。
所述黏接層50由高分子材料如聚醯亞胺形成,分別收容於第一凹槽11及第二凹槽21中。每一黏接層50具有一內側面51、與內側面51相對的外側面53及連接內側面51與外側面53的上表面52。本實施例中,所述二黏接層50的下端分別收容於第一凹槽11及第二凹槽21中、其上端分別超出第一電極10及第二電極20的上表面。其中一黏接層50的內側面51抵頂第一凹槽11靠近第二電極20的一側表面且其上端超出所述第一電極10的上表面,其外側面53與第一電極10的外側面共面。另一黏接層50的內側面51抵頂第二凹槽21靠近第一電極10的一側表面且其上端超出所述第二電極20的上表面,其外側面53與第二電極20的外側面共面。所述二黏接層50的內側面51的上端超出第一電極10的上表面的部分圍繞發光晶片40設置。所述二黏接層50的上表面52平行共面且位於所述第一電極10的上表面上方。所述黏接層50的上表面52與第一電極10的上表面平行且二者之間的距離小於或等於80微米。為進一步減小黏接層50自第一電極10及第二電極20向上凸伸的垂直距離,在其他實施例中,所述黏接層50的上表面52與第一電極10的上表面之間的距離小於或等於40微米。
本申請中,因黏接層50的下端收容於第一凹槽11及第二凹槽21中,有效的降低了黏接層50凸伸出第一電極10及第二電極20上表面的垂直高度,從而減小了發光二極體100的垂直厚度,有利於發光二極體100薄型化的發展。
更進一步的,本申請中,由於僅黏接層50內側面51的一部分超出第一電極10及第二電極20上表面並圍繞發光晶片40,從而使所述二黏接層50吸收發光晶片40發出的光線的面積減小,進而導致發光二極體100的出光效率提高。
所述反光杯60為一筒體,其底端固定在二黏接層50的上表面52上,且其外周緣與所述第一電極10及第二電極20的外端共面。所述反光杯60的中部開設有一貫穿的通孔61,用以收容所述封裝層70於其內。所述通孔61的孔徑自遠離黏接層50的頂端向連接黏接層50的底端逐漸減小。所述發光晶片40收容在通孔61的底端中部。所述反光杯60的內表面用於反射發光晶片40發出的光線,用以提高發光二極體100的出光效率。為進一步提高發光二極體100的出光效率,於所述通孔61的內表面上形成有一厚度均勻的反光層62。本實施例中,所述反光杯60由散熱性能良好的金屬材料製成,用以增強反光杯60的抗衰變能力,所述反光層62為反射性強的銀膜。
所述封裝層70填滿所述通孔61且包覆所述發光晶片40於其內,從而保護發光晶片40。所述封裝層70由透明矽膠混合螢光粉製成,發光晶片40發出的光線經由所述封裝層70向外均勻出射。
請參閱圖2,本發明第二實施例所示的發光二極體200與第一實施例所示的發光二極體100的區別在於:降低了黏接層50的厚度而得到厚度較小的黏接層50a,使黏接層50a收容在第一凹槽11及第二凹槽21後,其上表面52a與第一電極10及第二電極20的上表面平行共面。如此,不僅降低了發光二極體200在豎直方向的高度,同時了避免了黏接層50a超出第一電極10及第二電極20造成的
吸光。
請參閱圖3,本發明第三實施例所示的發光二極體300與第一實施例所示的發光二極體100的區別在於:降低了黏接層50的厚度而得到厚度較小的黏接層50b,使黏接層50b收容在第一凹槽11及第二凹槽21後,其上表面52b與第一電極10及第二電極20的上表面平行且位於第一電極10的上表面下方。如此,進一步降低了發光二極體300在豎直方向的高度。本實施例中,黏接層50b的上表面52b與第一電極10的上表面之間的距離小於或等於40微米。
綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。
Claims (7)
- 一種發光二極體,包括相互電絕緣設置的電極、固定於所述電極的上表面且電性連接所述電極的發光晶片、固定於所述電極的上表面的黏接層及固定在所述黏接層上表面上且與所述電極電絕緣並圍設發光晶片的反光杯,其改良在於:所述電極的上表面形成有凹槽,所述黏接層收容於所述凹槽內,所述黏接層的上表面不超出所述電極的上表面。
- 如申請專利範圍第1項所述的發光二極體,其中,所述黏接層完全收容在所述凹槽內。
- 如申請專利範圍第2項所述的發光二極體,其中,所述黏接層的上表面與所述電極的上表面平齊。
- 如申請專利範圍第2項所述的發光二極體,其中,黏接層的上表面位於所述電極的上表面的下方。
- 如申請專利範圍第4項所述的發光二極體,其中,所述黏接層的上表面與所述電極的上表面之間的距離小於或等於40微米。
- 如申請專利範圍第1項所述的發光二極體,其中,所述黏接層的上表面與所述電極的上表面平行。
- 如申請專利範圍第1項所述的發光二極體,其中,所述反光杯的內表面形成有反光膜。
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CN201210426783.0A CN103794698B (zh) | 2012-10-31 | 2012-10-31 | 发光二极管 |
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TW201419588A TW201419588A (zh) | 2014-05-16 |
TWI479701B true TWI479701B (zh) | 2015-04-01 |
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US (1) | US20140117390A1 (zh) |
CN (1) | CN103794698B (zh) |
TW (1) | TWI479701B (zh) |
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CN111834510A (zh) * | 2019-04-17 | 2020-10-27 | 深圳市明格科技有限公司 | 发光二极管封装支架 |
JP7206505B2 (ja) * | 2020-09-30 | 2023-01-18 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TW200814372A (en) * | 2006-05-31 | 2008-03-16 | Sanyo Electric Co | Electronic component and method for manufacturing the same |
TWM376909U (en) * | 2009-09-28 | 2010-03-21 | Fu Sheng Ind Co Ltd | Frame structure for light emitting diodes |
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KR100665216B1 (ko) * | 2005-07-04 | 2007-01-09 | 삼성전기주식회사 | 개선된 측벽 반사 구조를 갖는 측면형 발광다이오드 |
CN101958387A (zh) * | 2010-07-16 | 2011-01-26 | 福建中科万邦光电股份有限公司 | 新型led光源模组封装结构 |
CN201964172U (zh) * | 2010-12-15 | 2011-09-07 | 浙江西子光电科技有限公司 | 一种led封装结构 |
CN102569594A (zh) * | 2010-12-24 | 2012-07-11 | 展晶科技(深圳)有限公司 | 封装载体及采用该封装载体的发光二极管封装结构 |
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2012
- 2012-10-31 CN CN201210426783.0A patent/CN103794698B/zh not_active Expired - Fee Related
- 2012-11-13 TW TW101142251A patent/TWI479701B/zh not_active IP Right Cessation
-
2013
- 2013-05-23 US US13/900,559 patent/US20140117390A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200814372A (en) * | 2006-05-31 | 2008-03-16 | Sanyo Electric Co | Electronic component and method for manufacturing the same |
TWM376909U (en) * | 2009-09-28 | 2010-03-21 | Fu Sheng Ind Co Ltd | Frame structure for light emitting diodes |
Also Published As
Publication number | Publication date |
---|---|
CN103794698B (zh) | 2016-12-21 |
US20140117390A1 (en) | 2014-05-01 |
TW201419588A (zh) | 2014-05-16 |
CN103794698A (zh) | 2014-05-14 |
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