JP2015008237A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2015008237A JP2015008237A JP2013133261A JP2013133261A JP2015008237A JP 2015008237 A JP2015008237 A JP 2015008237A JP 2013133261 A JP2013133261 A JP 2013133261A JP 2013133261 A JP2013133261 A JP 2013133261A JP 2015008237 A JP2015008237 A JP 2015008237A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- white resist
- emitting element
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 229920005989 resin Polymers 0.000 claims description 41
- 239000011347 resin Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 abstract description 18
- 238000000605 extraction Methods 0.000 abstract description 9
- 238000007789 sealing Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 229920002050 silicone resin Polymers 0.000 description 8
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- 238000001721 transfer moulding Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005486 sulfidation Methods 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12035—Zener diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
Description
そして、これらの発光装置で求められる性能は日増しに高まっており、更なる高出力(高輝度)化が要求されている。
図1は、本発明の実施形態に係る発光装置100の模式的平面図である。図2(a)は図1に示す発光装置のA−A線における模式的断面図であり、図2(b)は図1に示す発光装置のB−B線における模式的断面図である。図1および図2に示すように、本発明の実施形態に係る発光装置100は、リードフレーム16と、リードフレーム16の上に接して配置された白色レジスト20と、白色レジスト20上に接合部材28を介して配置された発光素子10と、を有している。なお、図1において、白色レジスト20は薄墨で示している。
有機物のバインダーとしては、好ましくは耐熱性・耐光性に優れたシリコーン樹脂やフッ素樹脂等が用いられ、フッ素樹脂を用いることが特に好ましい。白色レジスト20を熱伝導率の高いリードフレームの上にこのような材料で形成することにより、従来のように発光素子10の直下に開口部を設けなくても白色レジストの劣化を抑制し、光取り出し効率の高い発光装置とすることができる。
リードフレーム16は平板状のものを用いることができるが、段差や凹凸を設けた金属板も用いることができる。
リードフレーム16は平板状の金属板に打ち抜き加工やエッチング加工等を行ったものである。エッチング加工されたリードフレーム16は図2に示すように、断面形状において凹凸が形成されており、樹脂部材との密着性を向上させることができる。エッチング加工ではリードフレームの断面(エッチング部分)部分すべてに、凹凸形状を形成させることができるので、リードフレーム16と樹脂部材との接合面積を大きくでき、これらの部材の密着性を向上させることができる。
樹脂部材22は、一対のリードフレームの間に埋設されて、正負のリードフレームを絶縁して離間する部材である。本実施の形態においては、樹脂部材22に、リードフレーム16がインサート成形されることで、発光素子10を載置する凹部を有する支持体(パッケージ)が形成されている。凹部の内側壁は外側に向かって広くなるテーパ形状とされており、発光素子10の光を反射するリフレクタとして機能する。このように、凹部は開口方向に広がる形状となっていることが好ましいが、筒状を含む他の形状であってもよい。
発光素子10には、例えば発光ダイオードを用いることができる。発光素子10は、サファイアなどの透光性基板(絶縁性の部材)に半導体層(例えば窒化物半導体層)が積層された発光素子が好適に用いられ、絶縁性の部材を白色レジスト側に配置し、接合部材28を介して実装する。本実施形態において、発光素子10は絶縁性の白色レジスト20の上に載置されるため、発光素子10の電極は白色レジストとの接合面となる面の反対側の面に、正負一対以上の電極を有することが好ましい。この電極にワイヤボンドすることにより、リードフレーム16と発光素子10とが電気的に接続される。複数の発光素子を使用する場合にあっては、発光素子の電極同士をワイヤ24で接合してもよい。ワイヤ24は、電気伝導性を有する金属等の各種材料であってよい。好ましくは、金、銅、アルミニウム、銀、または金合金、銀合金などからなる。
接合部材28は、発光素子10を白色レジスト20に接合する部材である。本実施形態においては、接合部材が導電性である必要はなく、エポキシ樹脂、シリコーン樹脂、ポリイミド樹脂、アクリル系樹脂や不飽和ポリエステルなどの樹脂などが好適に挙げられる。これらは、単独又は2種類以上混合して使用することもできる。また、金、銀、銅やカーボンなどの導電性材料を含有させても良い。
発光素子10は、任意に封止部材26に被覆される。封止部材26は発光素子10からの光を透過可能であればよい。封止部材26の材質は、例えば熱可塑性樹脂、または熱硬化性樹脂である。熱硬化性樹脂のうち、エポキシ樹脂、変性エポキシ樹脂、シリコーン樹脂、変性シリコーン樹脂、アクリレート樹脂、ウレタン樹脂からなる群から選択される少なくとも1種により形成することが好ましく、特にエポキシ樹脂、変性エポキシ樹脂、シリコーン樹脂、変性シリコーン樹脂が好ましい。
発光装置100には、図1および図2に示すように、さらに保護素子30を設けることもできる。保護素子としては、例えばツェナーダイオードを好適に用いることができる。保護素子30は、上下面から導通を取るタイプの保護素子を用いる場合は図1に示すように白色レジスト20に設けられた開口部21内において、リードフレーム16と導電性の接合部材により電気的に接続される。上面に正負の電極を持つタイプの保護素子を用いる場合は、発光素子10と同様に白色レジスト20の上に接合部材を介して載置されることが好ましい。
次に、第2実施形態について説明する。図3は、本発明の実施形態に係る発光装置200の模式的平面図である。図4は図3に示す発光装置のC−C線における模式的断面図である。図3および図4に示すように、本実施形態に係る発光装置200は、平板状のリードフレーム16を発光装置200の側面から外部に突出させて、突出された部分を底面方向に屈曲して外部電極としている。本実施形態では、一対のリードフレーム16を金型で挟み、射出成形により樹脂部材22を成形している。
次に、第3実施形態について説明する。図6は、本発明の実施形態に係る発光装置300の模式的断面図である。本実施形態では、白色レジスト20を予めリードフレーム16の表面に形成し、その後トランスファー成形で樹脂部材22と一体成形している。成形方法は射出成形であってもよい。
次に、第4実施形態について説明する。図7は、本発明の実施形態に係る発光装置400の模式的断面図である。図7に示すように、本実施形態では開口部21を覆うように光反射性樹脂32が配置されている。光反射性樹脂32は、リードフレーム16とワイヤ24とを接続した後に、リードフレーム16とワイヤ24との接続部を覆うように形成される。したがって、ワイヤ24の一部が光反射性樹脂32に被覆されることとなる。
次に、第5実施形態について説明する。図8は、本発明の実施形態に係る発光装置500の模式的断面図である。本実施形態では、樹脂部材22は凹状ではなく、リードフレーム16の上面を露出するように、例えばトランスファー成形により、平板状に成形されている。白色レジスト20はリードフレーム16上に配置されており、発光素子10を被覆するようにレンズ状の封止部材26により被覆されている。レンズ状の封止部材26は、例えばトランスファー形成、圧縮成形、ポッティングなどの方法で形成することができる。
10 発光素子
16 リードフレーム
20 白色レジスト
21 開口部
22 樹脂部材
24 ワイヤ
26 封止部材
28 接合部材
30 保護素子
32 光反射性樹脂
Claims (8)
- リードフレームと、
前記リードフレームの上に接して配置された白色レジストと、
前記白色レジストの上に配置された発光素子と、を有し、
前記発光素子は透光性基板上に半導体層を有してなり、前記透光性基板と前記白色レジストとが接合部材を介して接合されており、
前記白色レジストは、前記リードフレームを露出させる開口部を有し、前記発光素子に接続されたワイヤが、前記開口部内において前記リードフレームと接続されていることを特徴とする発光装置。 - 前記透光性基板は絶縁性であることを特徴とする請求項1に記載の発光装置。
- 前記リードフレームの熱伝導率は300W/m・K以上であることを特徴とする請求項1または請求項2に記載の発光装置。
- 前記白色レジストの膜厚は5〜50μmであることを特徴とする請求項1乃至請求項3のいずれか1項に記載の発光装置。
- 前記開口部内に光反射性樹脂が配置されていることを特徴とする請求項1乃至請求項4のいずれか1項に記載の発光装置。
- 前記リードフレームは少なくとも一対設けられ、離間した前記リードフレーム間が樹脂部材で埋められており、前記白色レジストは前記リードフレーム間の前記樹脂部材を被覆するように設けられていることを特徴とする請求項1乃至請求項5のいずれか1項に記載の発光装置。
- 前記白色レジストは、前記発光素子の接合面の全面に対応するように形成されていることを特徴とする請求項1乃至請求項6のいずれか1項に記載の発光装置。
- 前記リードフレームの厚みは、0.1mm〜1.0mmであることを特徴とする請求項1乃至請求項7のいずれか1項に記載の発光装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013133261A JP6221403B2 (ja) | 2013-06-26 | 2013-06-26 | 発光装置 |
US14/315,437 US9385288B2 (en) | 2013-06-26 | 2014-06-26 | Light-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013133261A JP6221403B2 (ja) | 2013-06-26 | 2013-06-26 | 発光装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015008237A true JP2015008237A (ja) | 2015-01-15 |
JP2015008237A5 JP2015008237A5 (ja) | 2016-08-04 |
JP6221403B2 JP6221403B2 (ja) | 2017-11-01 |
Family
ID=52338326
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013133261A Active JP6221403B2 (ja) | 2013-06-26 | 2013-06-26 | 発光装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9385288B2 (ja) |
JP (1) | JP6221403B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016178270A (ja) * | 2015-03-23 | 2016-10-06 | ローム株式会社 | Ledパッケージ |
WO2016167062A1 (ja) * | 2015-04-17 | 2016-10-20 | 株式会社 東芝 | 半導体発光装置及びその製造方法 |
US9728690B2 (en) | 2015-09-30 | 2017-08-08 | Nichia Corporation | Light emitting device and method of manufacturing the same |
JP2020107629A (ja) * | 2018-12-26 | 2020-07-09 | 日亜化学工業株式会社 | 樹脂パッケージ及び発光装置 |
JP2020161671A (ja) * | 2019-03-27 | 2020-10-01 | 日亜化学工業株式会社 | 発光装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6102187B2 (ja) * | 2012-10-31 | 2017-03-29 | 日亜化学工業株式会社 | 発光装置用パッケージ及びそれを用いた発光装置 |
JP6107136B2 (ja) | 2012-12-29 | 2017-04-05 | 日亜化学工業株式会社 | 発光装置用パッケージ及びそれを備える発光装置、並びにその発光装置を備える照明装置 |
JP6484396B2 (ja) | 2013-06-28 | 2019-03-13 | 日亜化学工業株式会社 | 発光装置用パッケージ及びそれを用いた発光装置 |
KR102160075B1 (ko) | 2014-04-22 | 2020-09-25 | 서울반도체 주식회사 | 발광 장치 |
JP6213582B2 (ja) * | 2016-01-22 | 2017-10-18 | 日亜化学工業株式会社 | 発光装置 |
US11600754B2 (en) * | 2018-11-29 | 2023-03-07 | Lumileds Llc | Light-emitting device and method of packaging the same |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007324205A (ja) * | 2006-05-30 | 2007-12-13 | Toyoda Gosei Co Ltd | 発光装置 |
JP2011044593A (ja) * | 2009-08-21 | 2011-03-03 | Hitachi Chem Co Ltd | Led基板及びledパッケージ |
JP2012104538A (ja) * | 2010-11-08 | 2012-05-31 | Stanley Electric Co Ltd | 半導体発光装置 |
US20120146494A1 (en) * | 2009-06-23 | 2012-06-14 | Asahi Glass Company, Limited | Light-emitting device |
JP2012151436A (ja) * | 2010-11-05 | 2012-08-09 | Rohm Co Ltd | 半導体発光装置 |
JP2013030594A (ja) * | 2011-07-28 | 2013-02-07 | Nichia Chem Ind Ltd | 発光装置の製造方法および発光装置 |
JP2013058695A (ja) * | 2011-09-09 | 2013-03-28 | Dainippon Printing Co Ltd | 樹脂付リードフレーム、半導体装置、照明装置、樹脂付リードフレームの製造方法および半導体装置の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3655267B2 (ja) | 2002-07-17 | 2005-06-02 | 株式会社東芝 | 半導体発光装置 |
JP4049186B2 (ja) | 2006-01-26 | 2008-02-20 | ソニー株式会社 | 光源装置 |
JP2008060344A (ja) | 2006-08-31 | 2008-03-13 | Toshiba Corp | 半導体発光装置 |
JP4107349B2 (ja) | 2007-06-20 | 2008-06-25 | ソニー株式会社 | 光源装置、表示装置 |
JP4862795B2 (ja) * | 2007-09-27 | 2012-01-25 | 豊田合成株式会社 | 光源装置 |
JP2009252778A (ja) * | 2008-04-01 | 2009-10-29 | Sharp Corp | 半導体パッケージの製造方法 |
JP5528900B2 (ja) * | 2010-04-30 | 2014-06-25 | ローム株式会社 | 発光素子モジュール |
JP5940775B2 (ja) * | 2010-08-27 | 2016-06-29 | ローム株式会社 | 液晶表示装置バックライト用led光源装置および液晶表示装置 |
JP5638922B2 (ja) | 2010-11-17 | 2014-12-10 | パナソニック株式会社 | 発光装置および発光装置を備える照明装置 |
JP5985846B2 (ja) * | 2011-06-29 | 2016-09-06 | Flexceed株式会社 | 発光素子搭載用基板及びledパッケージ |
JP2013089717A (ja) | 2011-10-17 | 2013-05-13 | Rohm Co Ltd | Ledモジュール |
EP2858132B1 (en) * | 2012-05-31 | 2017-09-13 | Panasonic Intellectual Property Management Co., Ltd. | Led module |
-
2013
- 2013-06-26 JP JP2013133261A patent/JP6221403B2/ja active Active
-
2014
- 2014-06-26 US US14/315,437 patent/US9385288B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007324205A (ja) * | 2006-05-30 | 2007-12-13 | Toyoda Gosei Co Ltd | 発光装置 |
US20120146494A1 (en) * | 2009-06-23 | 2012-06-14 | Asahi Glass Company, Limited | Light-emitting device |
JP2011044593A (ja) * | 2009-08-21 | 2011-03-03 | Hitachi Chem Co Ltd | Led基板及びledパッケージ |
JP2012151436A (ja) * | 2010-11-05 | 2012-08-09 | Rohm Co Ltd | 半導体発光装置 |
JP2012104538A (ja) * | 2010-11-08 | 2012-05-31 | Stanley Electric Co Ltd | 半導体発光装置 |
JP2013030594A (ja) * | 2011-07-28 | 2013-02-07 | Nichia Chem Ind Ltd | 発光装置の製造方法および発光装置 |
JP2013058695A (ja) * | 2011-09-09 | 2013-03-28 | Dainippon Printing Co Ltd | 樹脂付リードフレーム、半導体装置、照明装置、樹脂付リードフレームの製造方法および半導体装置の製造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016178270A (ja) * | 2015-03-23 | 2016-10-06 | ローム株式会社 | Ledパッケージ |
US10957676B2 (en) | 2015-03-23 | 2021-03-23 | Rohm Co., Ltd. | LED package |
WO2016167062A1 (ja) * | 2015-04-17 | 2016-10-20 | 株式会社 東芝 | 半導体発光装置及びその製造方法 |
US9728690B2 (en) | 2015-09-30 | 2017-08-08 | Nichia Corporation | Light emitting device and method of manufacturing the same |
US10103299B2 (en) | 2015-09-30 | 2018-10-16 | Nichia Corporation | Light emitting device |
US10361347B2 (en) | 2015-09-30 | 2019-07-23 | Nichia Corporation | Light emitting device |
JP2020107629A (ja) * | 2018-12-26 | 2020-07-09 | 日亜化学工業株式会社 | 樹脂パッケージ及び発光装置 |
JP2020161671A (ja) * | 2019-03-27 | 2020-10-01 | 日亜化学工業株式会社 | 発光装置 |
JP7417031B2 (ja) | 2019-03-27 | 2024-01-18 | 日亜化学工業株式会社 | 発光装置 |
Also Published As
Publication number | Publication date |
---|---|
JP6221403B2 (ja) | 2017-11-01 |
US9385288B2 (en) | 2016-07-05 |
US20150021640A1 (en) | 2015-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6221403B2 (ja) | 発光装置 | |
JP6635137B2 (ja) | 発光装置 | |
JP4698412B2 (ja) | 発光装置および照明装置 | |
TWI520380B (zh) | 發光裝置封裝及具有發光裝置封裝的光源單元 | |
JP5343831B2 (ja) | 発光装置 | |
JP2009238960A (ja) | 発光装置 | |
JP6107415B2 (ja) | 発光装置 | |
JP2017130640A (ja) | 発光装置 | |
JP2013110273A (ja) | 半導体発光装置 | |
JP2014187081A (ja) | 発光装置 | |
EP2197048A1 (en) | Light-emitting device | |
JP2008235827A (ja) | 発光装置 | |
JP2008159708A (ja) | 発光装置 | |
JP2019145690A (ja) | 発光装置及び発光装置の製造方法 | |
JP6079544B2 (ja) | 発光装置および発光装置の製造方法 | |
JPWO2012053386A1 (ja) | 発光装置の製造方法及び発光装置 | |
JP2008159707A (ja) | 発光装置 | |
JP6303457B2 (ja) | 発光装置およびその製造方法 | |
JPWO2014050650A1 (ja) | 発光装置 | |
JP2009283988A (ja) | 発光ダイオード | |
JP4976895B2 (ja) | 発光装置 | |
US11233184B2 (en) | Light-emitting device and method for manufacturing the same | |
TWI479701B (zh) | 發光二極體 | |
JP2008159706A (ja) | 発光装置 | |
KR102075522B1 (ko) | 발광소자패키지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160616 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160616 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170327 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170404 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170524 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170905 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170918 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6221403 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |